JPH01134984A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH01134984A JPH01134984A JP29351287A JP29351287A JPH01134984A JP H01134984 A JPH01134984 A JP H01134984A JP 29351287 A JP29351287 A JP 29351287A JP 29351287 A JP29351287 A JP 29351287A JP H01134984 A JPH01134984 A JP H01134984A
- Authority
- JP
- Japan
- Prior art keywords
- harmonic
- film
- lambda
- fundamental wave
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000011149 active material Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052593 corundum Inorganic materials 0.000 abstract description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 6
- 238000005253 cladding Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明；よ第２高調波を発生させる半導体レーザ装置
の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to the structure of a semiconductor laser device that generates a second harmonic.
第３図は従来の半導体レーザ装置を示す構成概略図で、
図において、（１）は１ｕＧａＡＳＰ活性層、（２）。FIG. 3 is a schematic configuration diagram showing a conventional semiconductor laser device.
In the figure, (1) is a 1uGaASP active layer, and (2).
（３）はそれぞれ上・下ＩｕＰクラッド層、（４） 、
（５）はそれぞれ前側、後側端面反射膜である。通常
、へき開面と同じ反射率を有するい（λはレーザ光の波
長）厚の膜で構成されている。(3) are the upper and lower IuP cladding layers, (4), respectively.
(5) are front and rear edge reflective films, respectively. Usually, it is composed of a thick film having the same reflectance as the cleavage plane (λ is the wavelength of the laser beam).
次に動作について説明する。ＩＨＧａＡｓ Ｐ活性層（
１）と上下ＩｎＰクラッド層（２） （３）で構成され
るダブルへテロに順方向にバイアスして、端面反射膜（
４） （５１を共振器とするレーザを動作させる。そし
て、レーザパワーを増加させてゆくと、結晶場の非線型
性により第２高調波の発生は強くなる。この第２高調波
は基本波の波長を１．３μｎとすると、０．６５μｎに
なる。０．６５μｎの光も１．３μｎの光も同時にレー
ザより出てゆく。通常、第２高調波の強度に比絞すると
、非常に小さ（１０−’倍以下である。Next, the operation will be explained. IHGaAs P active layer (
The edge reflective film (
4) Operate a laser with (51 as a resonator). Then, as the laser power is increased, the generation of the second harmonic becomes stronger due to the nonlinearity of the crystal field. This second harmonic is the fundamental wave. If the wavelength of is 1.3 μn, it becomes 0.65 μn. Both the 0.65 μn light and the 1.3 μn light are emitted from the laser at the same time. Normally, when focused on the intensity of the second harmonic, it becomes very small. (10-' times or less.
従来の半導体レーザ装置は以上のように構成されていた
ので、第２高調波を効率良くとりだすためには、レーザ
共振器内の基本波の光密度を高くし、かつ第２高調波の
端面反射率を下げて共振器外に効率良くとりだす事が必
要である。しかしながら、通常の反射膜の構成では端面
反射率が十分高くないため、基本波の光密度を高くする
事が難かしい。そこで端面反射率を上げてやれば良いが
、同時に第２高調波の反射率も下げる事が難かしくなる
など問題点があった。Conventional semiconductor laser devices have been configured as described above, so in order to efficiently extract the second harmonic, it is necessary to increase the optical density of the fundamental wave within the laser resonator and reduce the end face reflection of the second harmonic. It is necessary to lower the rate and take it out of the resonator efficiently. However, with a typical reflective film configuration, the end face reflectance is not sufficiently high, making it difficult to increase the optical density of the fundamental wave. Therefore, it is possible to increase the reflectance of the end face, but there are problems in that it becomes difficult to simultaneously lower the reflectance of the second harmonic.
この発明は上記のような問題点を解消するためになされ
たもので、基本波の反射率を高めると同時に、第２高調
波の反射率を低める事が可能な半導体レーザ装置を得る
事を目的とする。This invention was made to solve the above-mentioned problems, and its purpose is to obtain a semiconductor laser device that can increase the reflectance of the fundamental wave and at the same time reduce the reflectance of the second harmonic. shall be.
この発明に係る半導体レーザ装置は、端面反射膜の構成
を基本波に対して反射率を高めると同時に、第２高調波
Ｖこ対して反射率を下げる反射膜の構成を採用したもの
である。The semiconductor laser device according to the present invention employs a configuration of the end face reflection film that increases the reflectance for the fundamental wave and at the same time lowers the reflectance for the second harmonic wave V.
この発明の反射膜の構成は基本波の波長λに対して′ｖ
４Ｈ厚のｓｉｏ、とαｓｉ膜および約λ／８莫厚のＡＩ
、Ｏ，膜との３層膜とで構成するとともにＡＩ 、０３
膜を端面に来るようにしたものである。The structure of the reflective film of this invention is ′v with respect to the wavelength λ of the fundamental wave.
4H thick sio and αsi films and approximately λ/8mm thick AI
, O, film and a three-layer film, and AI , 03
The membrane is placed on the end surface.
以下、この発明の一実施例を図について説明する。第１
図において、（４υ、６υの前側及び後側端面反射膜が
従来例と比校して異なる所である。この反射膜＆４ツ６
υの構成を第２図に示しである。基本波の波長をスとし
て、（至）がλ／４膜厚の８１−０２膜、Ｑがλ／４膜
厚のαＳ１膜、（至）が約λ／８膜享のＡｌ２Ｏ３膜で
ある。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, the front and rear edge reflective films of (4υ and 6υ) are different from the conventional example.
The configuration of υ is shown in Figure 2. With the wavelength of the fundamental wave as S, (to) is an 81-02 film with a thickness of λ/4, Q is an αS1 film with a thickness of λ/4, and (to) is an Al2O3 film with a thickness of about λ/8.
以上のように構成された膜の基本波での反射率は、９０
％以上の値となり、同時に第２高調波に対しては、最表
のＡＩ、Ｏ，膜（財）が１／４波゛°長−となるため２
％以下の低反射率となる。このような特徴を有する膜構
成にすると、基本波である１、３μｎ程度の光はレーザ
共振器内に閉じ込められ光密度が上がり、かつ０．６５
μｎ程度の第２高調波は端面より効率良く放射されるよ
うになる。The reflectance of the film configured as above at the fundamental wave is 90
% or more, and at the same time, for the second harmonic, the outermost AI, O, film (goods) is 1/4 wave length, so 2
% or less. When a film structure with such characteristics is used, the fundamental wave of light of about 1.3 μn is confined within the laser resonator, increasing the optical density and increasing the optical density to 0.65
The second harmonic of about μn is efficiently radiated from the end face.
上記実施例では基本波発生領域の活性材料がＩｎＧａ
Ａｓ Ｐ活性層で構成されたものについて説明したが、
これはＧａＡｌＡｓ活性、１で構成されている他の材料
の場合でも良い。但し、特に、ＩｎＧａＡｓＰ活性層の
場合、光密度に対する許容量が大きくとれ、光密度を高
くまで上げる事が出来るという利点がある。このため第
２１調波強度が強くなるという特徴がある。In the above embodiment, the active material in the fundamental wave generation region is InGa.
Although we have explained the structure composed of AsP active layer,
This may also be the case with other materials composed of GaAlAs active. However, especially in the case of an InGaAsP active layer, there is an advantage that the tolerance for optical density is large and the optical density can be increased to a high level. For this reason, it has the characteristic that the 21st harmonic intensity becomes strong.
以上のようにこの発明によれば、基本波に対して９２％
以上反射させ第２高調波を９８％以上透過させる端面反
射膜を構成したので、半導体レーザ装置Ｊり第２高調波
を容易に取りだする効果がある。As described above, according to this invention, 92% of the fundamental wave
Since the end face reflection film is configured to reflect and transmit 98% or more of the second harmonic, the second harmonic can be easily extracted from the semiconductor laser device J.
第１図はこの発明の一実施例による半導体レーザ装置を
示す基本概略図、第２図はこの発明の一実施例の反射膜
構成を示す断面□図、第３図は従来の半導体レーザ装置
を示す基本概略図である。
図において、（１）はＩｎ Ｇａ Ａｓ Ｐ活性層、（
２）はＩｎＰ上クラッド層、（３）はＩｎＰ下グラッド
層、（ト）は前側反射膜、６υは後側反射膜、翰はＶ′
４Ｓ１−０２膜・Ｑはλ／４αＳ１膜、〜はλ：／ｓ
Ａｌ ２ αｓ膜である。
なお、図中、同一符号は同一、または相当部分を示す。FIG. 1 is a basic schematic diagram showing a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a reflective film configuration of an embodiment of the present invention, and FIG. 3 is a diagram showing a conventional semiconductor laser device. FIG. In the figure, (1) is an InGaAsP active layer, (
2) is the InP upper cladding layer, (3) is the InP lower cladding layer, (g) is the front reflective film, 6υ is the rear reflective film, and the blade is V'
4S1-02 film, Q is λ/4αS1 film, ~ is λ:/s
It is an Al 2 αs film. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (2)
て、その基本波を９２％以上反射させ、かつ第２高調波
を９８％以上透過させる端面反射膜で構成される半導体
レーザ装置。(1) A semiconductor laser device that generates a second harmonic and is configured with an end face reflection film that reflects 92% or more of the fundamental wave and transmits 98% or more of the second harmonic.
成されている事を特徴とする特許請求の範囲第１項記載
の半導体レーザ装置。(2) The semiconductor laser device according to claim 1, wherein the active material of the fundamental wave generation region is made of IuGaAsP.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29351287A JPH01134984A (en) | 1987-11-19 | 1987-11-19 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29351287A JPH01134984A (en) | 1987-11-19 | 1987-11-19 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01134984A true JPH01134984A (en) | 1989-05-26 |
Family
ID=17795699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29351287A Pending JPH01134984A (en) | 1987-11-19 | 1987-11-19 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01134984A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0485187A2 (en) * | 1990-11-07 | 1992-05-13 | Oki Electric Industry Co., Ltd. | Second harmonic generator using a laser as a fundamental wave source |
| US6574060B2 (en) | 1997-12-09 | 2003-06-03 | Hitachi, Ltd. | Magnetic storage apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60112024A (en) * | 1983-11-22 | 1985-06-18 | Matsushita Electric Ind Co Ltd | Light wavelength converter |
| JPS6286881A (en) * | 1985-10-14 | 1987-04-21 | Matsushita Electric Ind Co Ltd | Light output device |
| JPS63164379A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | Photo output device |
| JPS63280484A (en) * | 1987-05-12 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Semiconductor device |
-
1987
- 1987-11-19 JP JP29351287A patent/JPH01134984A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60112024A (en) * | 1983-11-22 | 1985-06-18 | Matsushita Electric Ind Co Ltd | Light wavelength converter |
| JPS6286881A (en) * | 1985-10-14 | 1987-04-21 | Matsushita Electric Ind Co Ltd | Light output device |
| JPS63164379A (en) * | 1986-12-26 | 1988-07-07 | Matsushita Electric Ind Co Ltd | Photo output device |
| JPS63280484A (en) * | 1987-05-12 | 1988-11-17 | Matsushita Electric Ind Co Ltd | Semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0485187A2 (en) * | 1990-11-07 | 1992-05-13 | Oki Electric Industry Co., Ltd. | Second harmonic generator using a laser as a fundamental wave source |
| US5247528A (en) * | 1990-11-07 | 1993-09-21 | Oki Electric Industry Co., Ltd. | Second harmonic generator using a laser as a fundamental wave source |
| US6574060B2 (en) | 1997-12-09 | 2003-06-03 | Hitachi, Ltd. | Magnetic storage apparatus |
| US7050253B2 (en) | 1997-12-09 | 2006-05-23 | Hitachi Global Storage Technologies Japan, Ltd. | Magnetic recording media and magnetic storage apparatus using the same |
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