JPH01133995A - 液相エピタキシャル成長装置 - Google Patents
液相エピタキシャル成長装置Info
- Publication number
- JPH01133995A JPH01133995A JP29184387A JP29184387A JPH01133995A JP H01133995 A JPH01133995 A JP H01133995A JP 29184387 A JP29184387 A JP 29184387A JP 29184387 A JP29184387 A JP 29184387A JP H01133995 A JPH01133995 A JP H01133995A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- substrate holder
- epitaxial growth
- liquid phase
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29184387A JPH01133995A (ja) | 1987-11-20 | 1987-11-20 | 液相エピタキシャル成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29184387A JPH01133995A (ja) | 1987-11-20 | 1987-11-20 | 液相エピタキシャル成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01133995A true JPH01133995A (ja) | 1989-05-26 |
JPH0574560B2 JPH0574560B2 (enrdf_load_html_response) | 1993-10-18 |
Family
ID=17774137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP29184387A Granted JPH01133995A (ja) | 1987-11-20 | 1987-11-20 | 液相エピタキシャル成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01133995A (enrdf_load_html_response) |
-
1987
- 1987-11-20 JP JP29184387A patent/JPH01133995A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0574560B2 (enrdf_load_html_response) | 1993-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7615115B2 (en) | Liquid-phase growth apparatus and method | |
Crossley et al. | A determination of the undercooling necessary to initiate the epitaxial growth of GaAs from solution in Ga | |
US3821039A (en) | Method of epitaxially depositing a semiconductor material on a substrate | |
JPH01133995A (ja) | 液相エピタキシャル成長装置 | |
US3533856A (en) | Method for solution growth of gallium arsenide and gallium phosphide | |
US3747562A (en) | Sliding furnace boat apparatus | |
US4427464A (en) | Liquid phase epitaxy | |
JPS621258Y2 (enrdf_load_html_response) | ||
GB2036590A (en) | Process and apparatus for the production of ga a1 as:si epitaxial coatings | |
JPS6021897A (ja) | 液相エピタキシヤル結晶成長方法 | |
JPS63285190A (ja) | 液相エピタキシャル成長方法 | |
Thomas | Growth and Structure of Evaporated Silicon Layers | |
JP4870859B2 (ja) | 液相エピタキシャル成長装置及び成長方法 | |
JPH0519516B2 (enrdf_load_html_response) | ||
JP3173402B2 (ja) | 半導体基板の液相成長装置 | |
JPS5926998A (ja) | 液相エピタキシヤル成長方法 | |
JPS5826099A (ja) | 液相エピタキシヤル成長法および成長用ボ−ド | |
JPS59213699A (ja) | 液相エピタキシヤル成長方法 | |
KR101962174B1 (ko) | 웨이퍼 제조방법 | |
Dorogan et al. | Method of GaAs growth on single crystal Si substrate | |
JPS61248520A (ja) | 液相エピタキシヤル成長装置 | |
JPS6358916A (ja) | 分子線エピタキシ−装置 | |
JPS5852323B2 (ja) | 液相エピタキシャル成長方法 | |
JPH0419196B2 (enrdf_load_html_response) | ||
JPS54147176A (en) | Liquid phase epitaxial growing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081018 Year of fee payment: 15 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081018 Year of fee payment: 15 |