JPH0574560B2 - - Google Patents

Info

Publication number
JPH0574560B2
JPH0574560B2 JP29184387A JP29184387A JPH0574560B2 JP H0574560 B2 JPH0574560 B2 JP H0574560B2 JP 29184387 A JP29184387 A JP 29184387A JP 29184387 A JP29184387 A JP 29184387A JP H0574560 B2 JPH0574560 B2 JP H0574560B2
Authority
JP
Japan
Prior art keywords
growth
substrate holder
epitaxial growth
substrate
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP29184387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01133995A (ja
Inventor
Tsunehiro Unno
Mineo Wajima
Hisafumi Tate
Taiichiro Konno
Hiroshi Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP29184387A priority Critical patent/JPH01133995A/ja
Publication of JPH01133995A publication Critical patent/JPH01133995A/ja
Publication of JPH0574560B2 publication Critical patent/JPH0574560B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP29184387A 1987-11-20 1987-11-20 液相エピタキシャル成長装置 Granted JPH01133995A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29184387A JPH01133995A (ja) 1987-11-20 1987-11-20 液相エピタキシャル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29184387A JPH01133995A (ja) 1987-11-20 1987-11-20 液相エピタキシャル成長装置

Publications (2)

Publication Number Publication Date
JPH01133995A JPH01133995A (ja) 1989-05-26
JPH0574560B2 true JPH0574560B2 (enrdf_load_html_response) 1993-10-18

Family

ID=17774137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29184387A Granted JPH01133995A (ja) 1987-11-20 1987-11-20 液相エピタキシャル成長装置

Country Status (1)

Country Link
JP (1) JPH01133995A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPH01133995A (ja) 1989-05-26

Similar Documents

Publication Publication Date Title
US20120042822A1 (en) METHOD FOR FABRICATING SiC SUBSTRATE
KR101619610B1 (ko) 대구경 단결정 성장장치 및 성장방법
JPH0574560B2 (enrdf_load_html_response)
US4123302A (en) Method for depositing epitaxial semiconductor from the liquid phase
GB2036590A (en) Process and apparatus for the production of ga a1 as:si epitaxial coatings
JPS621258Y2 (enrdf_load_html_response)
JPH0519516B2 (enrdf_load_html_response)
JPS58120600A (ja) 3―v族化合物半導体のエピタキシカル成長方法
JPH0676275B2 (ja) 気相エピタキシャル成長装置および基板の加熱方法
US4390379A (en) Elimination of edge growth in liquid phase epitaxy
JPS6021897A (ja) 液相エピタキシヤル結晶成長方法
JPS55105000A (en) Production of silicon carbide crystal layer
US4412502A (en) Apparatus for the elimination of edge growth in liquid phase epitaxy
KR101962174B1 (ko) 웨이퍼 제조방법
JPH0419196B2 (enrdf_load_html_response)
JPS621358B2 (enrdf_load_html_response)
JPH01270590A (ja) 液相エピタルキシャル成長方法
KR830002291B1 (ko) 반도체 재료의 에피택샬층 형성장치
JPS60236217A (ja) 気相成長装置
JPS61248520A (ja) 液相エピタキシヤル成長装置
JPH09199508A (ja) GaAs基板の熱処理方法及び熱処理用基板ホルダ
JP3073870B2 (ja) 半導体液相エピタキシャル装置
Dorogan et al. Method of GaAs growth on single crystal Si substrate
JPS63285190A (ja) 液相エピタキシャル成長方法
JPS589794B2 (ja) 半導体の液相多層薄膜成長法および成長装置

Legal Events

Date Code Title Description
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 15

Free format text: PAYMENT UNTIL: 20081018

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081018

Year of fee payment: 15