JPH0113215B2 - - Google Patents
Info
- Publication number
- JPH0113215B2 JPH0113215B2 JP57025141A JP2514182A JPH0113215B2 JP H0113215 B2 JPH0113215 B2 JP H0113215B2 JP 57025141 A JP57025141 A JP 57025141A JP 2514182 A JP2514182 A JP 2514182A JP H0113215 B2 JPH0113215 B2 JP H0113215B2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- quartz glass
- silicon carbide
- furnace core
- glass tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000012808 vapor phase Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- DWAWYEUJUWLESO-UHFFFAOYSA-N trichloromethylsilane Chemical compound [SiH3]C(Cl)(Cl)Cl DWAWYEUJUWLESO-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Description
【発明の詳細な説明】
本発明は半導体用炭化珪素構成部材の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a silicon carbide component for semiconductors.
半導体素子の製造において、拡散工程、酸化工
程等で用いられる炉芯管等の構成部材は石英ガラ
ス製のものが多かつた。しかし、石英ガラス炉芯
管を用いて半導体素子を製造した場合、石英ガラ
スは高温では軟化変形しやすく、又容易に失透す
るため炉芯管の寿命が短い等の欠点がある。そこ
で、近年、炭化珪素炉芯管が用いられるようにな
つてきている。 In the manufacture of semiconductor devices, many structural members such as furnace core tubes used in the diffusion process, oxidation process, etc. are made of quartz glass. However, when a semiconductor device is manufactured using a quartz glass furnace tube, the quartz glass easily softens and deforms at high temperatures, and is easily devitrified, resulting in drawbacks such as a short lifespan of the furnace tube. Therefore, in recent years, silicon carbide furnace core tubes have come into use.
従来、炭化珪素炉芯管はトリクロルシラン、四
塩化珪素、モノシラン等を原料としてCVD法
（chemical vapor deposition法）によりカーボ
ン基体の表面にシリコンを気相析出させるととも
にSiCを生成させ、この後カーボン基体を酸化除
去するという方法により製造されている。 Conventionally, silicon carbide furnace core tubes use trichlorosilane, silicon tetrachloride, monosilane, etc. as raw materials to deposit silicon in a vapor phase on the surface of a carbon substrate using the CVD method (chemical vapor deposition method) and generate SiC. It is manufactured by oxidizing and removing.
しかし、上述した従来方法には以下の如き欠点
がある。 However, the conventional method described above has the following drawbacks.
(1) カーボン基体は一般に不純物の少ないものを
製造することが困難である。したがつて、カー
ボン基体に何ら処理を施さずに製造された炭化
珪素炉芯管を半導体素子の製造に用いた場合に
は半導体素子の特性を悪化させる。このため、
カーボン基体をハロゲンガス雰囲気中で高温熱
処理を施す等の方法により純化処理を施す必要
があり、莫大な経費を要し経済的でない。この
ことは大型形状品を造る場合に特に顕著であ
る。(1) It is generally difficult to produce carbon substrates with few impurities. Therefore, when a silicon carbide furnace core tube manufactured without performing any treatment on the carbon substrate is used for manufacturing a semiconductor device, the characteristics of the semiconductor device will be deteriorated. For this reason,
It is necessary to purify the carbon substrate by a method such as subjecting the carbon substrate to high-temperature heat treatment in a halogen gas atmosphere, which requires a huge amount of expense and is not economical. This is particularly noticeable when manufacturing large-sized products.
(2) カーボン基体は一般に多孔質であるので、そ
の表面に気相析出されるシリコンはカーボン基
体の気孔にも入り込んだ、いわゆる“足つき”
構造をなす。このため、カーボン基体を焼き抜
き（酸化除去）して製造された炭化珪素炉芯管
は“足つき”構造が逆に突起となり平滑性が失
われる。このように内面に平滑性のない炉芯管
はたとえ化学的に高純度であつても、半導体ウ
エハの熱処理工程でウエハを炉芯管に出し入れ
する際、ウエハに振動を与えるため、これがウ
エハ中に結晶欠陥（スリツプ転位）を発生させ
る原因となつている。この結果、製造される半
導体素子の特性を悪化させる。(2) Since carbon substrates are generally porous, the silicon deposited on their surfaces in a vapor phase also enters the pores of the carbon substrate, resulting in so-called “footing”.
form a structure. For this reason, in a silicon carbide furnace core tube manufactured by burning out (oxidizing and removing) a carbon base, the "footed" structure becomes a protrusion and loses its smoothness. Even if a furnace core tube with an uneven inner surface has high chemical purity, it causes vibrations to the wafer when the wafer is taken in and out of the furnace core tube during the heat treatment process for semiconductor wafers. This causes crystal defects (slip dislocations) to occur. As a result, the characteristics of the manufactured semiconductor device deteriorate.
(3) カーボン基体表面の凹凸はCVD法特有のペ
ブルの発生を促進し、気相析出膜の表面が荒れ
るため、製品の使用前における酸処理等の取り
扱いを困難なものにしている。(3) The unevenness of the surface of the carbon substrate promotes the generation of pebbles that are characteristic of the CVD method, and the surface of the vapor-phase deposited film becomes rough, making it difficult to handle the product with acid treatment before use.
本発明は上記欠点を解消するためになされたも
のであり、不純物が少なく、平滑な表面を有する
半導体用炭化珪素構成部材の製造方法を提供しよ
うとするものである。 The present invention has been made in order to eliminate the above-mentioned drawbacks, and it is an object of the present invention to provide a method for manufacturing a silicon carbide component for semiconductors that has few impurities and has a smooth surface.
以下、本発明を炭化珪素炉芯管の製造に適用し
た実施例を図を参照して説明する。 EMBODIMENT OF THE INVENTION Hereinafter, an embodiment in which the present invention is applied to manufacturing a silicon carbide furnace core tube will be described with reference to the drawings.
図は本発明の半導体用炭化珪素炉芯管の製造に
用いるCVD装置であり、図中１は石英ガラス製
外筒管である。この外筒管１の上下端面には夫々
上蓋２及び下蓋３が配設されている。この上蓋２
の中央開孔には排気管４が挿着されている。前記
外筒管１の外周には高周波誘導コイル５が配設さ
れている。また、外筒管１内部の前記下蓋３上に
は環状の絶縁性支持材６が設置されており、かつ
該支持材６上には内径200mm、長さ2000mmの筒状
のカーボン電極７が配設されている。このカーボ
ン電極７と前記外筒管１間には断熱用のカーボン
フエルト８が充填されている。更に、カーボン電
極７内部の前記下蓋３上には支持台９が設置され
ており、かつ該支持台９上には外径100mm、長さ
1800mm、肉厚1.0mmの石英ガラス管１０が配置さ
れている。この石英ガラス管１０と前記カーボン
電極７間には前記下蓋３を貫通して外部からガス
導入管１１が挿入されている。 The figure shows a CVD apparatus used for manufacturing the silicon carbide furnace core tube for semiconductors of the present invention, and in the figure, 1 is a quartz glass outer tube. An upper cover 2 and a lower cover 3 are disposed on the upper and lower end surfaces of the outer cylindrical tube 1, respectively. This top lid 2
An exhaust pipe 4 is inserted into the central opening. A high frequency induction coil 5 is disposed on the outer periphery of the outer cylindrical tube 1. Further, an annular insulating support member 6 is installed on the lower lid 3 inside the outer tube 1, and a cylindrical carbon electrode 7 with an inner diameter of 200 mm and a length of 2000 mm is mounted on the support member 6. It is arranged. A carbon felt 8 for heat insulation is filled between the carbon electrode 7 and the outer cylindrical tube 1. Furthermore, a support stand 9 is installed on the lower cover 3 inside the carbon electrode 7, and on the support stand 9 there is provided an outer diameter of 100 mm and a length of
A quartz glass tube 10 of 1800 mm and a wall thickness of 1.0 mm is arranged. A gas introduction tube 11 is inserted from the outside between the quartz glass tube 10 and the carbon electrode 7 by penetrating the lower cover 3.
次に、上述したCVD装置による半導体用炭化
珪素炉芯管の製造方法を説明する。まず、排気管
４から真空引きして外筒管１内を１mmHg以下の
真空とした。次に、高周波誘導コイル５に通電す
ることによりカーボン電極７を加熱し、1200〜
1400℃に昇温して石英ガラス管１０を間接的に加
熱した。つづいて、一定温度に達した後、ガス導
入管１１から水素をキヤリヤガスとしてトリクロ
ルメチルシランを導入した。原料ガスは加熱部分
に到達すると熱分解を起し、石英ガラス管１０外
壁にSiC膜１２として気相析出し始めた。この
SiC膜１２の膜厚が３mm以上となるように反応時
間を設定し、所定時間経過後原料ガスの導入を止
めて反応を停止した。つづいて、高周波誘導コイ
ル５の通電を停止して自然放冷した。十分に冷却
した後、外筒管１からSiC膜１２がコーテイング
された石英ガラス管１０を取り出した。つづい
て、フツ化水素酸に浸漬し、石英ガラス管１０を
溶解除去してSiC膜１２からなる半導体用炭化珪
素炉芯管を得た。ここで、SiC膜１２がコーテイ
ングされた石英ガラス管１０を外筒管１から取り
出した時点で両者の熱膨張差により石英ガラス管
１０にクラツクが発生していたが、これはフツ化
水素酸を用いて石英ガラス管１０を溶解除去する
際に有利な条件となる。また、SiC膜１０にはほ
とんどクラツクが発生することはなかつたが、ク
ラツクが発生する場合もあつた。しかし、SiC膜
１０のクラツクの発生は石英ガラス管１０の径と
肉厚及びSiC膜１２の厚さを変化させることによ
つて解決し得る。 Next, a method for manufacturing a silicon carbide furnace core tube for semiconductors using the above-mentioned CVD apparatus will be described. First, the exhaust pipe 4 was evacuated to create a vacuum of 1 mmHg or less inside the outer tube 1. Next, the carbon electrode 7 is heated by energizing the high frequency induction coil 5, and
The quartz glass tube 10 was heated indirectly by increasing the temperature to 1400°C. Subsequently, after reaching a certain temperature, trichloromethylsilane was introduced from the gas introduction pipe 11 using hydrogen as a carrier gas. When the raw material gas reached the heated part, it was thermally decomposed and began to be deposited in the vapor phase as a SiC film 12 on the outer wall of the quartz glass tube 10. this
The reaction time was set so that the thickness of the SiC film 12 was 3 mm or more, and after the predetermined time, the introduction of the raw material gas was stopped to stop the reaction. Subsequently, the high frequency induction coil 5 was de-energized and allowed to cool naturally. After sufficiently cooling, the quartz glass tube 10 coated with the SiC film 12 was taken out from the outer tube 1. Subsequently, the tube was immersed in hydrofluoric acid to dissolve and remove the quartz glass tube 10 to obtain a semiconductor silicon carbide furnace core tube made of the SiC film 12. Here, when the quartz glass tube 10 coated with the SiC film 12 was taken out from the outer tube 1, cracks had occurred in the quartz glass tube 10 due to the difference in thermal expansion between the two. This is an advantageous condition when the quartz glass tube 10 is dissolved and removed using this method. Further, although almost no cracks occurred in the SiC film 10, cracks did occur in some cases. However, the occurrence of cracks in the SiC film 10 can be solved by changing the diameter and wall thickness of the quartz glass tube 10 and the thickness of the SiC film 12.
しかして、上記実施例によれば、SiC膜１２を
気相析出させる基体として、表面が極めて平滑な
石英ガラス管１０を用いているので、製造される
炭化珪素炉芯管の内壁は平滑である。また、石英
ガラス管１０は炭化珪素炉芯管の品質を悪化させ
るような不純物を含まず、かつ、フツ化水素酸に
よつて完全に除去されるので、製造される炭化珪
素炉芯管は不純物の少ないものである。 According to the above embodiment, since the quartz glass tube 10 with an extremely smooth surface is used as the substrate on which the SiC film 12 is vapor-phase deposited, the inner wall of the manufactured silicon carbide furnace tube is smooth. . In addition, since the quartz glass tube 10 does not contain impurities that would deteriorate the quality of the silicon carbide furnace tube and is completely removed by hydrofluoric acid, the manufactured silicon carbide furnace tube contains no impurities. It is something with few.
また、以下の実験例からスリツプ転位が発生し
ないことが確められた。 Furthermore, it was confirmed from the following experimental examples that slip dislocations did not occur.
実験例
本発明方法で製造された外径110mm、内径100
mm、長さ1500mmの炭化珪素炉芯管を酸化装置にセ
ツトし、炉芯管両端を石英ガラス製キヤツプで気
密性を取る構造（テーパー摺り合せ）とした。こ
の炉芯管中にシリコンウエハを導入し、1200℃の
ドライO2雰囲気中、10mm／minの速度でウエハの
出し入れ操作を10回繰り返した。この操作後ウエ
ハを検査したが、石英ガラス製炉芯管を用いた場
合と同様スリツプ転位は認められなかつた。Experimental example Outer diameter 110mm, inner diameter 100mm manufactured by the method of the present invention
A silicon carbide furnace core tube with a length of 1,500 mm was set in the oxidizer, and both ends of the furnace core tube were made airtight with quartz glass caps (tapered). A silicon wafer was introduced into this furnace core tube, and the operation of loading and unloading the wafer was repeated 10 times at a speed of 10 mm/min in a dry O 2 atmosphere at 1200°C. After this operation, the wafer was inspected, but no slip dislocations were observed, as was the case when a quartz glass furnace tube was used.
上記実験例から本発明方法で製造された炭化珪
素炉芯管の内面の平滑性は石英ガラス製炉芯管と
同等であることが分つた。 From the above experimental examples, it was found that the smoothness of the inner surface of the silicon carbide furnace core tube manufactured by the method of the present invention was equivalent to that of a quartz glass furnace core tube.
なお、上記実施例では石英ガラス管１０の外壁
にSiC膜１２を気相析出させたが、石英ガラス管
１０の内壁にSiC膜を気相析出させてもよい。ま
た、高周波ワークコイルを移動しながら上記実施
例と同様な方法でSiC膜を気相析出させれば、長
尺で径の大きい炭化珪素炉芯管を得ることができ
る。この方法により、例えば外径150mm、内径140
mm、長さ2000mmの炭化珪素炉芯管を得ることがで
きた。 In the above embodiment, the SiC film 12 was deposited on the outer wall of the quartz glass tube 10 in a vapor phase, but the SiC film 12 may be deposited on the inner wall of the quartz glass tube 10 in a vapor phase. Moreover, if a SiC film is vapor-phase deposited in the same manner as in the above embodiment while moving a high-frequency work coil, a long silicon carbide furnace core tube with a large diameter can be obtained. With this method, for example, an outer diameter of 150 mm and an inner diameter of 140 mm can be obtained.
We were able to obtain a silicon carbide furnace core tube with a length of 2000 mm.
また、上述した方法と同様な方法で、炭素源及
び窒素源となる気体化合物を反応させ、石英ガラ
ス管の内壁又は外壁にSi3N4を気相析出せしめた
後、石英ガラス管を除去すれば、半導体用窒化珪
素構成部材を製造することができる。 In addition, by a method similar to the method described above, gaseous compounds serving as a carbon source and a nitrogen source are reacted to deposit Si 3 N 4 on the inner or outer wall of the quartz glass tube in a vapor phase, and then the quartz glass tube is removed. For example, silicon nitride components for semiconductors can be manufactured.
以上詳述した如く本発明によれば、不純物が少
なく、平滑な表面を有する半導体用炭化珪素構成
部材の製造方法を提供できるものである。 As detailed above, according to the present invention, it is possible to provide a method for manufacturing a silicon carbide component for semiconductors having a smooth surface with few impurities.
図は本発明の実施例において用いられたCVD
装置を示す断面図である。
１……石英ガラス製外筒管、２……上蓋、３…
…下蓋、４……排気管、５……高周波誘導コイ
ル、６……絶縁性支持材、７……カーボン電極、
８……カーボンフエルト、９……支持台、１０…
…石英ガラス管、１１……ガス導入管、１２……
SiC膜。
The figure shows a CVD used in an example of the present invention.
FIG. 2 is a cross-sectional view showing the device. 1... Quartz glass outer tube, 2... Top lid, 3...
... lower lid, 4 ... exhaust pipe, 5 ... high frequency induction coil, 6 ... insulating support material, 7 ... carbon electrode,
8...Carbon felt, 9...Support stand, 10...
...Quartz glass tube, 11...Gas introduction tube, 12...
SiC film.
Claims (1)
ガラス管の内壁又は外壁にSiCを気相析出せしめ
た後、石英ガラス管を除去することを特徴とする
半導体用炭化珪素構成部材の製造方法。1. A method for producing a silicon carbide component for semiconductors, which comprises reacting a gaseous compound containing C and Si to deposit SiC in a vapor phase on the inner or outer wall of a quartz glass tube, and then removing the quartz glass tube. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57025141A JPS58141525A (en) | 1982-02-18 | 1982-02-18 | Preparation of silicon carbide structural member for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57025141A JPS58141525A (en) | 1982-02-18 | 1982-02-18 | Preparation of silicon carbide structural member for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58141525A JPS58141525A (en) | 1983-08-22 |
| JPH0113215B2 true JPH0113215B2 (en) | 1989-03-03 |
Family
ID=12157700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57025141A Granted JPS58141525A (en) | 1982-02-18 | 1982-02-18 | Preparation of silicon carbide structural member for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58141525A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2926396B1 (en) * | 2008-01-16 | 2010-03-19 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING AMORPHOUS HYDROGENIC SILICON CARBIDE FILMS WITH THROUGH PORES AND FILMS THUS OBTAINED |
-
1982
- 1982-02-18 JP JP57025141A patent/JPS58141525A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58141525A (en) | 1983-08-22 |
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