JPH0397691A - Jig for producing semiconductor device - Google Patents
Jig for producing semiconductor deviceInfo
- Publication number
- JPH0397691A JPH0397691A JP23175389A JP23175389A JPH0397691A JP H0397691 A JPH0397691 A JP H0397691A JP 23175389 A JP23175389 A JP 23175389A JP 23175389 A JP23175389 A JP 23175389A JP H0397691 A JPH0397691 A JP H0397691A
- Authority
- JP
- Japan
- Prior art keywords
- film
- susceptor
- sic
- porous
- carbon graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 21
- 239000010439 graphite Substances 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910021397 glassy carbon Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 16
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229930006000 Sucrose Natural products 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 150000003445 sucroses Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体装置製造用治具、例えばエビタキシャル或長装置
のサセプタまたはシリコンウェハ保持用のウエハバスケ
ットのような治具の改良に関し、サセプタの如き半導体
装置製造用の治具を、820 、02、汚染物などが入
り込む吸着サ・イトの少ない構造としたものを提供する
ことを目的とし、カーボングラファイトにその表面を非
多孔質にする膜をコートし、次に化学気相戒長法による
炭化珪素(SiC)多結晶膜をコートすることにより得
られる非多孔性の半導体装置製造用治具を含み構戒する
。[Detailed Description of the Invention] [Summary] The present invention relates to improvements in jigs for manufacturing semiconductor devices, such as susceptors for epitaxial length equipment or wafer baskets for holding silicon wafers. The purpose of the jig is to provide a jig with a structure that has fewer adsorption sites where contaminants and the like can enter. Carbon graphite is coated with a film that makes its surface non-porous, and then chemically coated with a film that makes the surface non-porous. It includes a jig for manufacturing non-porous semiconductor devices obtained by coating a silicon carbide (SiC) polycrystalline film using a vapor phase process.
?産業上の利用分野〕
本発明は、半導体装置製造用治具、例えばエビタキシャ
ル威長装置のサセブタまたはシリコンウエハ保持用のウ
エハバスケットのような治具の改良に関する。近年の製
造プロセスにおいては、低不純物、および水分、0■の
取り込みの少ない治具が望まれている。? INDUSTRIAL APPLICATION FIELD The present invention relates to improvements in semiconductor device manufacturing jigs, for example, jigs such as susceptors for epitaxial growth equipment or wafer baskets for holding silicon wafers. In recent manufacturing processes, there is a demand for jigs that contain low impurities and that incorporate little moisture and 0.
例えば従来のSiエビタキシャル膜製造プロセスにおい
ては、炭化珪素(SiC)コートグラファイトサセプタ
を用いていた。ところが、大気中にてウエハ(処理基板
)をローディングするなどの処理を行なううちに、大気
中の水分、02を吸収してしまう。For example, in a conventional Si epitaxial film manufacturing process, a silicon carbide (SiC) coated graphite susceptor was used. However, while performing processing such as loading a wafer (processed substrate) in the atmosphere, moisture in the atmosphere, 02, is absorbed.
第3図には、ウエハ22を載置したサセブタ21が断面
で示される。このサセブタ21の図に円Aで囲んだ部分
を顕@鏡で拡大して見ると第2図に示される状態が観察
された。なお同図において、11はサセブタ21を構威
するカーボングラファイト、12はSiC多結晶膜であ
る。サセプタ21をSiCコートするには、サセブタ2
1を構戒するカーボングラファイト11上に化学気相威
長(CVD)法でSiCを堆積するもので、そのときS
iC多結晶膜12が多結晶状態でカーボングラファイト
11の上に図示の如くに戒長ずる。カーボングラファイ
トそれ自体は多孔質の材料であるので、その表面近くに
孔13が作られ、またSiCはいわゆるかさ高い結晶で
あるので、SiC結晶膜12の間に隙間14が作られて
いる。同じことはウエハバスケットの場合にも観察され
、サセブタやウエハバスケットが大気にさらされたとき
にこれらの孔13、隙間14中に水分などが入り込むの
である。また金属などの汚染源が孔や隙間中に入り込む
例も観察されている。FIG. 3 shows a cross section of the susceptor 21 on which the wafer 22 is placed. When the part surrounded by circle A in the diagram of this sucrose pig 21 was enlarged with a microscope, the condition shown in FIG. 2 was observed. In the figure, 11 is carbon graphite forming the susceptor 21, and 12 is a SiC polycrystalline film. To coat the susceptor 21 with SiC, the susceptor 2
SiC is deposited by chemical vapor deposition (CVD) method on carbon graphite 11 containing S
The iC polycrystalline film 12 is stretched in a polycrystalline state on the carbon graphite 11 as shown in the figure. Since carbon graphite itself is a porous material, pores 13 are created near its surface, and since SiC is a so-called bulky crystal, gaps 14 are created between SiC crystal films 12. The same thing can be observed in the case of a wafer basket, and when the susceptor or wafer basket is exposed to the atmosphere, moisture etc. enters into these holes 13 and gaps 14. In addition, cases have been observed in which contamination sources such as metals have entered the holes and crevices.
?発明が解決しようとする課題]
従って、高温となるエビタキシャル或長プロセス中に治
具H20 、O■などがこれらの孔13、隙間14から
外に出てリアクター内で拡散し、拡散した0■とか汚染
物などがエビタキシャル層内に取り込まれてしまい、戊
長したエビタキシャル膜の品質を低下させる。また、ウ
エハバスケットの場合、それはシリコンウエハを保持す
るためのものであり、ウエハを保持した状態で、アニー
ルのような高温処理、酸化膜形戒などの目的で高温炉内
に入れられると、ウエハバスケットから出る+120
、O■、金属などがウエハの表面に付着する問題がある
。? [Problems to be Solved by the Invention] Therefore, during the high-temperature evitaxial elongation process, the jigs H20, O2, etc. come out from these holes 13 and gaps 14 and diffuse inside the reactor, causing the diffused O■ and contaminants are incorporated into the epitaxial layer, degrading the quality of the elongated epitaxial film. In addition, in the case of a wafer basket, it is used to hold silicon wafers, and when the wafers are placed in a high-temperature furnace for high-temperature processing such as annealing, oxide film formation, etc., the wafers are +120 from the basket
There is a problem that metals such as , O and metal adhere to the surface of the wafer.
そこで本発明は、サセブタの如き半導体装置製造用の治
具を、H.0 、O■、汚染物などが入り込む吸着サイ
トの少ない構造としたものを提供することを目的とする
。Therefore, the present invention provides a jig for manufacturing semiconductor devices such as a susceptor to H. The object of the present invention is to provide a structure with fewer adsorption sites into which contaminants, etc., can enter.
〔課題を解決するための手段)
上記課題は、カーボングラファイトにその表面を非多孔
質にする膜をコートし、次に化学気相成長法による炭化
珪素(SiC)多結晶膜をコートすることにより得られ
る非多孔性の半導体装置製造用治具によって解決される
。[Means for solving the problem] The above problem can be solved by coating carbon graphite with a film that makes its surface non-porous, and then coating it with a polycrystalline silicon carbide (SiC) film by chemical vapor deposition. The problem is solved by the resulting non-porous semiconductor device manufacturing jig.
?作用]
第上図は本発明の原理を説明するための実施例の図で、
図中、第2図に示した部分と同じ部分は同一符号を付し
て表示し、15はガラス状カーボン膜である。カーボン
グラファイト11は前記したように多孔質であり、Si
C多結晶膜12は多結晶状態であるのでかなり水分等を
含みやすいが、ガラス状カーボン膜15によりカーボン
グラファイト11の表面を孔l3を埋め込みつ覧カバー
させ、カーボングラファイト11の多孔質の表面状態を
緻密な非多孔質の状態に変え、I1■0、0■などが入
り込むことのないようにするのである。? Effect] The upper figure is a diagram of an embodiment for explaining the principle of the present invention.
In the figure, the same parts as those shown in FIG. 2 are denoted by the same reference numerals, and 15 is a glassy carbon film. Carbon graphite 11 is porous as described above, and Si
Since the C polycrystalline film 12 is in a polycrystalline state, it easily contains moisture, etc. However, the glassy carbon film 15 covers the surface of the carbon graphite 11 by filling in pores l3, thereby changing the porous surface state of the carbon graphite 11. This changes the material into a dense, non-porous state and prevents I1■0, 0■, etc. from entering.
以下、本発明を図示の実施例により具体的に説明する。 Hereinafter, the present invention will be specifically explained with reference to illustrated embodiments.
本発明の実施例においては、サセブタ21の表面に当該
表面部分を非多孔性にする膜、例えばガラス状カーボン
(ガラス状炭素)膜15をコーティングし、それによっ
てサセブタ2lを構或するカーボングラファイト11の
孔13を第1図に示されるように埋めるのである。In the embodiment of the present invention, the surface of the susceptor 21 is coated with a film that makes the surface part non-porous, for example, a glassy carbon film 15, thereby forming the carbon graphite 11 that constitutes the susceptor 2l. The holes 13 are filled as shown in FIG.
ガラス状カーボン膜15を作成するには、Cll系組或
のフェノールのような樹脂をサセプタ21の表面に塗布
し、1300゜Cの高温で不活性雰囲気中で樹脂を炭化
しその組或を非品質のCに変える。To create the glassy carbon film 15, a resin such as a Cl-based composition or phenol is applied to the surface of the susceptor 21, and the resin is carbonized in an inert atmosphere at a high temperature of 1300°C to deactivate the composition. Change to C for quality.
または、上記に代えて、CH.などを、干数百度Cから
二千度Cの高温で黒鉛に変化させ、孔のない異方性の強
い黒鉛パイ口グラファイト(熱分解黒鉛)の膜でサセプ
タ2lの表面をカバーさせるようにしてもよい。Or, in place of the above, CH. The surface of the susceptor 2L is covered with a pore-free, highly anisotropic graphite pie-shaped graphite (pyrolytic graphite) film that is pore-free and has strong anisotropy. Good too.
Siエビタキシャルプロセスにおいて、ガラノ、状カー
ボン膜15をコーティングしたサセブタを用いた実施例
を示す。An example is shown in which a susceptor coated with a galanocarbon film 15 is used in the Si epitaxial process.
戒長条件: 温度 1100゜C
ガス SiHzα2/H2
圧力 760 Torr
この条件で威長したSiエビタキシャル膜を、従来サセ
ブタを用いた場合のS+エビタキシャル膜と比較したと
ころ、シャロ一ピットの数は10’ケ/c+flであっ
たものが、本発明にか\るサセプタを用いた例では、シ
ャロービットの数は103ケ/crt!であった。Kaicho conditions: Temperature: 1100°C Gas: SiHzα2/H2 Pressure: 760 Torr When comparing the Si epitaxial film grown under these conditions with the S+ epitaxial film made using a conventional susceptor, the number of shallow pits was 10. In the example using the susceptor according to the present invention, the number of shallow bits is 103 bits/crt! Met.
こ\でシャロービットについて説明すると、ウエハ上に
Siエビタキシャル或長した後に、戒長じたSi膜の表
面を軽くエッチングした後に観察すると、砂状の細かい
ピット(穴)が認められ、それをシャロービットと呼称
する。シャローピットの数が多いとSiエビタキシャル
膜の膜質は悪いので、シャロービットの数の大小はSi
エビタキシャル膜の膜質判断の基準となる。本発明の実
施例では、従来例に比べて3桁もシャロ一ビットの数が
少なくなったのである.
?発明の効果)
以上のように本発明によれば、サセブタを構或するカー
ボングラファイトの表面にガラス状カーボン膜を形威し
、カーボングラファイトの孔を埋め、かつ、表面を緻密
な材質のものとすることにより、サセブタが大気にさら
されたときにカーボングラファイト中にHzOなどが入
り込むことのないようにし、それによってエビタキシャ
ル或長においてはサセブタからの11■0、0■なとの
発散がなく、エビタキシャル層にHzOなどが取り込ま
れることがなくなり、エビタキシャル層の品質を上げる
ことができ、歩留り向上に寄与するところが大きい。To explain shallow bits here, after a Si epitaxial layer is formed on a wafer, when the surface of the elongated Si film is lightly etched and observed, fine sand-like pits (holes) are observed. It is called shallow bit. If the number of shallow pits is large, the quality of the Si epitaxial film is poor, so the number of shallow bits is
It serves as a standard for determining the film quality of epitaxial membranes. In the embodiment of the present invention, the number of shallow bits is reduced by three orders of magnitude compared to the conventional example. ? Effects of the Invention) As described above, according to the present invention, a glassy carbon film is formed on the surface of the carbon graphite constituting the susceptor, the pores of the carbon graphite are filled, and the surface is made of a dense material. This prevents HzO from entering the carbon graphite when the susceptor is exposed to the atmosphere, and thereby prevents the emission of 11■0,0■ from the susceptor in the epitaxial length. , HzO and the like are not introduced into the epitaxial layer, and the quality of the epitaxial layer can be improved, which greatly contributes to improved yield.
第1図は本発明実施例断面図、 第2図は従来例断面図、 第3図ウエハが載置されたサセプタの断面図である。 図中、 11はカーボングラファイト、 12はSiC多結晶膜、 13は孔、 14は隙間、 15はガラス状カーボン膜、 21はサセプタ、 22はウエハ を示す。 シtリチ亡シ明ネE方壱うイクリ住ゴrlJTn第1図 FIG. 1 is a sectional view of an embodiment of the present invention. Figure 2 is a sectional view of a conventional example; FIG. 3 is a sectional view of a susceptor on which a wafer is placed. In the figure, 11 is carbon graphite, 12 is a SiC polycrystalline film; 13 is a hole; 14 is a gap, 15 is a glassy carbon film; 21 is the susceptor, 22 is a wafer shows. Figure 1
Claims (1)
にする膜(15)をコートし、次に化学気相成長法によ
る炭化珪素(SiC)多結晶膜(12)をコートするこ
とにより得られる非多孔性の半導体装置製造用治具。A non-porous material obtained by coating carbon graphite (11) with a film (15) that makes its surface non-porous, and then coating it with a silicon carbide (SiC) polycrystalline film (12) by chemical vapor deposition. Jig for manufacturing semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23175389A JPH0397691A (en) | 1989-09-08 | 1989-09-08 | Jig for producing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23175389A JPH0397691A (en) | 1989-09-08 | 1989-09-08 | Jig for producing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0397691A true JPH0397691A (en) | 1991-04-23 |
Family
ID=16928497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23175389A Pending JPH0397691A (en) | 1989-09-08 | 1989-09-08 | Jig for producing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0397691A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0557841U (en) * | 1991-12-27 | 1993-07-30 | 関西日本電気株式会社 | Jig for semiconductor heat treatment |
WO2018159754A1 (en) * | 2017-03-02 | 2018-09-07 | 信越化学工業株式会社 | Silicon carbide substrate production method and silicon carbide substrate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50130363A (en) * | 1974-04-01 | 1975-10-15 |
-
1989
- 1989-09-08 JP JP23175389A patent/JPH0397691A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50130363A (en) * | 1974-04-01 | 1975-10-15 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0557841U (en) * | 1991-12-27 | 1993-07-30 | 関西日本電気株式会社 | Jig for semiconductor heat treatment |
WO2018159754A1 (en) * | 2017-03-02 | 2018-09-07 | 信越化学工業株式会社 | Silicon carbide substrate production method and silicon carbide substrate |
CN110366611A (en) * | 2017-03-02 | 2019-10-22 | 信越化学工业株式会社 | The manufacturing method and silicon carbide substrate of silicon carbide substrate |
KR20190121366A (en) * | 2017-03-02 | 2019-10-25 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Method for producing silicon carbide substrate and silicon carbide substrate |
JPWO2018159754A1 (en) * | 2017-03-02 | 2019-12-26 | 信越化学工業株式会社 | Method for manufacturing silicon carbide substrate and silicon carbide substrate |
CN110366611B (en) * | 2017-03-02 | 2021-07-27 | 信越化学工业株式会社 | Method for producing silicon carbide substrate and silicon carbide substrate |
RU2756815C2 (en) * | 2017-03-02 | 2021-10-05 | Син-Эцу Кемикал Ко., Лтд. | Method for producing substrate based on silicon carbide and silicon carbide substrate |
US11346018B2 (en) | 2017-03-02 | 2022-05-31 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide substrate production method and silicon carbide substrate |
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