CN202039157U - Bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device - Google Patents
Bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device Download PDFInfo
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- CN202039157U CN202039157U CN2011200957927U CN201120095792U CN202039157U CN 202039157 U CN202039157 U CN 202039157U CN 2011200957927 U CN2011200957927 U CN 2011200957927U CN 201120095792 U CN201120095792 U CN 201120095792U CN 202039157 U CN202039157 U CN 202039157U
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- pallet
- cover
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Abstract
The utility model relates to a bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device. The device comprises a bracket, a lifting frame, a graphite tray, a quartz bell jar, a thermal baffle, a radio frequency heater and a stainless cavity. Under the driving of a motor, a graphite pipe, an upper-layer graphite cover and a middle-layer graphite tray are driven to rotate together; reactant gas enters from a quartz pipe and comes out from a clearance formed between the upper-layer graphite cover and a graphite ring to form natural convection of air; from the centre to the edge, a uniform current field, a uniform temperature field and a uniform concentration field of the air current are formed between a substrate arranged on the upper-layer graphite cover and the middle-layer graphite tray; and then a uniform epitaxial layer is formed on the substrate.
Description
Technical field
The utility model relates to a kind of carbonization growth technology, particularly a kind of hot wall type crystal clock bell-type multi-disc silicon carbide epitaxial growth equipment.
Background technology
For the iso-epitaxy of SiC, at first need under 1500-1600 ℃ even higher temperature, carry out the growth temperature height; Secondly, SiC has a variety of crystal formations, must control in epitaxy, depends primarily on growing technology.Chemical vapor deposition (CVD) is the epitaxially grown main method of present SiC.From the type of CVD equipment, can be divided into level with vertical two kinds.1997, U.S. Emcore company has released the vertical monolithic CVD of cold wall equipment, German Daimler Benz company in 1998 and U.S. Northrop Grumman company in 1997 have released the cold wall monolithic of level CVD equipment respectively, and Sweden Linkoping university in 1997 and ABB company cooperation research and development go out horizontal hot-wall cvd equipment.Hot-wall cvd equipment has the unexistent advantage of cold wall system, as heating efficiency height, growth velocity height, the epitaxial material surface topography is good, purity is high.Therefore, be extensive use of epitaxy research and the production work that hot wall or warm wall CVD technology are carried out SiC at present.
But for guaranteeing the output of high quality epitaxial wafer, the CVD pallet design trends towards large size, large vol, and the also corresponding increase of the volume of reaction chamber thereupon, this has just increased gas and has had the difficulty of uniform flow field, temperature field and concentration field.
The utility model content
The utility model provides a kind of bell-jar hot wall silicon carbide high temperature epitaxy sheet growing apparatus at the above-mentioned defective of prior art, can make substrate aufwuchsplate surface gas produce uniform flow field, temperature field and concentration field.
In order to solve the problems of the technologies described above, the utility model is achieved through the following technical solutions:
A kind of bell-jar hot wall silicon carbide high temperature epitaxy sheet growing apparatus comprises support, lifting support, graphite pallet, quartz bell cover, thermal baffle, radio-frequency heater, stainless steel cavity; The graphite pallet is fixed on the support, and support is provided with support bar, and lifting support is located on this support bar and with an electric motor driving, described quartz bell cover, thermal baffle, radio-frequency heater are fixed on the lifting support, and airtight connection the between quartz bell cover and the lifting support; The stainless steel cavity is fixedlyed connected with support, and described graphite pallet comprises carbon tube, silica tube, upper strata graphite cover and middle level graphite pallet, graphite annulus, a motor, and graphite pallet bottom, middle level central authorities are provided with groove, and the groove top center is provided with through hole; The interior location that cooperates of groove of middle level graphite support tray bottom is inserted in described carbon tube upper end; Silica tube is sheathed in the carbon tube, and the through hole UNICOM of the tube core of silica tube and groove top; Graphite cover lower end, upper strata is provided with the substrate groove that holds substrate, and middle level graphite pallet upper end is provided with substrate groove that holds substrate and the back-up block that protrudes from middle level graphite tray upper surface, and the upper strata graphite cover is located at graphite pallet upper end, middle level, between be connected with back-up block; Graphite annulus is surrounded on middle level graphite pallet and upper strata graphite cover setting, and upper strata graphite cover and graphite annulus are reserved with the gap; Described carbon tube also is connected with another electric motor driving; Described graphite pallet wraps up with heat preservation carbon felt, and is fixed on the stainless steel collet of stainless steel cavity; The stainless steel cavity is provided with venting port.
Preferably, be provided with quartzy pallet between described heat preservation carbon felt and the stainless steel collet.
Preferably, described middle level graphite pallet is pressed several substrate grooves of central angle uniform distribution, and it is fan-shaped that back-up block is, and back-up block is evenly respectively between the two two substrates grooves, and the fan-shaped drift angle aligned through holes center of circle.
As can be seen from the above technical solutions, the utility model is under the driving of motor, driving carbon tube and upper strata graphite cover and middle level graphite pallet rotates together, reactant gases enters from silica tube, is reserved with the gap from upper strata graphite cover and graphite annulus and overflows, and discharges through venting hole again, form the natural convection of gas, make between upper strata graphite cover and the middle level graphite pallet and from the center to the outer rim, form uniform flow field, thereby promote to have identical concentration field between the substrate, guarantee epitaxially grown homogeneity.Upper strata graphite cover and middle level graphite pallet insulation carbon felt surround simultaneously, help to form the uniform temperature field in the reaction chamber, thereby form uniform epitaxial film on substrate.
Description of drawings
Fig. 1 closes the quartz bell cover structural representation for the utility model.
Fig. 2 opens the quartz bell cover structural representation for the utility model.
Embodiment
Below in conjunction with embodiment the utility model is described in further detail.
Referring to Figure 1 and Figure 2, the utility model bell-jar hot wall silicon carbide high temperature epitaxy sheet growing apparatus comprises support 1, lifting support 2, graphite pallet 3, quartz bell cover 4, thermal baffle 5, radio-frequency heater 6, stainless steel cavity 7; Graphite pallet 3 is fixed on the support 1, support 1 is provided with support bar 8, lifting support 2 is located on this support bar 8 and with an electric motor driving, and described quartz bell cover 4, thermal baffle 5, radio-frequency heater 6 are fixed on the lifting support 2, and airtight connection the between the bearing surface of quartz bell cover 4 and lifting support 2; Stainless steel cavity 7 is fixedlyed connected with support 1, described graphite pallet 3 comprises carbon tube 12, silica tube 13, upper strata graphite cover 14 and middle level graphite pallet 15, graphite annulus 16, a motor, graphite pallet 15 bottom central authorities in middle level are provided with groove, and the groove top center is provided with through hole; The interior location that cooperates of groove of graphite pallet 15 bottoms, middle level is inserted in described carbon tube 12 upper ends; Silica tube 13 is sheathed in the carbon tube 12, and the through hole UNICOM of the tube core of silica tube and groove top; Graphite cover 14 lower ends in upper strata are provided with the substrate groove that holds substrate, and graphite pallet 15 upper ends, middle level are provided with substrate groove that holds substrate and the back-up block that protrudes from middle level graphite tray upper surface, and the upper strata graphite cover is located at middle level graphite pallet upper end, between be connected with back-up block; Graphite annulus 16 is surrounded on middle level graphite pallet 15 and upper strata graphite cover 14 is provided with, and upper strata graphite cover 14 is reserved with the gap with graphite annulus 16; Described carbon tube 12 also is connected with another electric motor driving; Described graphite pallet 3 wraps up with heat preservation carbon felt 18, and is fixed on the stainless steel collet 19 of stainless steel cavity 7; The stainless steel cavity is provided with venting port 21.
As preferred implementation of the present utility model, be provided with quartzy pallet 20 between described heat preservation carbon felt 18 and the stainless steel collet.
As preferred implementation of the present utility model, described middle level graphite pallet is pressed several substrate grooves of central angle uniform distribution, and it is fan-shaped that back-up block is, and back-up block is evenly respectively between the two two substrates grooves, and the fan-shaped drift angle aligned through holes center of circle.
Above-mentioned specific embodiment is purpose, feature and the effect that is used for describing in detail the utility model, for the personage who is familiar with this type of skill, according to the above description, may do part change and modification to this specific embodiment, its essence does not detach the spiritual category person of the utility model, all should be included in the claim of this case suitable first Chen Ming.
Claims (3)
1. a bell-jar hot wall silicon carbide high temperature epitaxy sheet growing apparatus is characterized in that, comprises support, lifting support, graphite pallet, quartz bell cover, thermal baffle, radio-frequency heater, stainless steel cavity; The graphite pallet is fixed on the support, and support is provided with support bar, and lifting support is located on this support bar and with an electric motor driving, described quartz bell cover, thermal baffle, radio-frequency heater are fixed on the lifting support, and airtight connection the between quartz bell cover and the lifting support; The stainless steel cavity is fixedlyed connected with support, and described graphite pallet comprises carbon tube, silica tube, upper strata graphite cover and middle level graphite pallet, graphite annulus, a motor, and graphite pallet bottom, middle level central authorities are provided with groove, and the groove top center is provided with through hole; The interior location that cooperates of groove of middle level graphite support tray bottom is inserted in described carbon tube upper end; Silica tube is sheathed in the carbon tube, and the through hole UNICOM of the tube core of silica tube and groove top; Graphite cover lower end, upper strata is provided with the substrate groove that holds substrate, and middle level graphite pallet upper end is provided with substrate groove that holds substrate and the back-up block that protrudes from middle level graphite tray upper surface, and the upper strata graphite cover is located at graphite pallet upper end, middle level, between be connected with back-up block; Graphite annulus is surrounded on middle level graphite pallet and upper strata graphite cover setting, and upper strata graphite cover and graphite annulus are reserved with the gap; Described carbon tube also is connected with another electric motor driving; Described graphite pallet wraps up with heat preservation carbon felt, and is fixed on the stainless steel collet of stainless steel cavity; The stainless steel cavity is provided with venting port.
2. bell-jar hot wall silicon carbide high temperature epitaxy sheet growing apparatus according to claim 1 is characterized in that, is provided with quartzy pallet between described heat preservation carbon felt and the stainless steel collet.
3. bell-jar hot wall silicon carbide high temperature epitaxy sheet growing apparatus according to claim 2, it is characterized in that described middle level graphite pallet is pressed several substrate grooves of central angle uniform distribution, it is fan-shaped that back-up block is, back-up block is evenly respectively between the two two substrates grooves, and the fan-shaped drift angle aligned through holes center of circle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200957927U CN202039157U (en) | 2011-04-02 | 2011-04-02 | Bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200957927U CN202039157U (en) | 2011-04-02 | 2011-04-02 | Bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202039157U true CN202039157U (en) | 2011-11-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200957927U Expired - Fee Related CN202039157U (en) | 2011-04-02 | 2011-04-02 | Bell jar type hot-wall silicon carbide high-temperature epitaxial wafer growing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
-
2011
- 2011-04-02 CN CN2011200957927U patent/CN202039157U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102618921A (en) * | 2012-04-11 | 2012-08-01 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
| CN102618921B (en) * | 2012-04-11 | 2015-06-03 | 浙江金瑞泓科技股份有限公司 | Double-exhaust flat-plate epitaxial furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Yu Jun Inventor after: Ou Yangzhong Inventor after: Li Xiguang Inventor after: Sun Guosheng Inventor before: Yu Jun Inventor before: Ou Yangzhong Inventor before: Li Xiguang Inventor before: Li Xiguang |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: YU JUN OU YANGZHONG LI XIGUANG LI XIGUANG TO: YU JUN OU YANGZHONG LI XIGUANG SUN GUOSHENG |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111116 Termination date: 20120402 |