CN202039158U - CVD graphite tray structure used for growing of semiconductor epitaxial wafer - Google Patents
CVD graphite tray structure used for growing of semiconductor epitaxial wafer Download PDFInfo
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- CN202039158U CN202039158U CN2011200937177U CN201120093717U CN202039158U CN 202039158 U CN202039158 U CN 202039158U CN 2011200937177 U CN2011200937177 U CN 2011200937177U CN 201120093717 U CN201120093717 U CN 201120093717U CN 202039158 U CN202039158 U CN 202039158U
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- substrate
- lower tray
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Abstract
The utility model relates to a CVD graphite tray structure used for growing of a semiconductor epitaxial wafer, which comprises a graphite pipe, a quartz tube, an upper-layer tray, a lower-layer tray and a motor, wherein a groove is arranged in the center of the lower end part of the lower-layer tray, and a through hole is arranged in the center above the groove; the upper end of the graphite pipe is placed into the groove at the bottom of the lower-layer tray for locating and matching; the quartz tube is sheathed in the graphite pipe, and the core of the quartz tube is communicated with the through hole above the groove; the lower end of the upper-layer tray is provided with a baseplate groove containing a substrate, the upper end of the lower-layer tray is provided with another baseplate for containing a baseplate and a supporting block protruding on the upper surface of the lower-layer tray, the upper-layer tray is arrange at the upper end of the lower-layer tray, and the upper-layer tray and the lower-layer tray are connected with each other by the supporting block; and the motor is in transmission connection with the graphite pipe. In the utility model, the epitaxial wafer can grow upwards or downwards, and air flow in the reaction cavity forms uniform flow field, temperature filed and concentration field, so that a uniform epitaxial layer can be formed on the substrate.
Description
Technical field
The utility model relates to the CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth, relates in particular to a kind of CVD graphite support holder structure that can face upward or downward the growing epitaxial sheet at semiconductor chip.
Background technology
Silicon carbide (SiC) is the third generation semiconductor material after Si, GaAs.As a kind of wide bandgap semiconductor materials, good physical electronic character such as SiC has broad stopband, voltage breakdown height, electronics saturation drift velocity height, thermal conductivity height, capability of resistance to radiation is strong, chemical stability is good and with characteristics such as silicon integrated circuit process compatible, be present known ideal semiconductor material, will bring revolutionary breakthrough to the development of short-wavelength light electrical part, radio frequency and microwave device, high power semi-conductor power switching module.As the ideal material of semiconducter device, need high-quality silicon carbide epitaxy sheet, the main silicon carbide epitaxy sheet mode of production is chemical Vapor deposition process (CVD) at present.
At present, the support holder structure of growing epitaxial sheet mainly is a single layer structure, gas passes through from the top of substrate, substrate is the growing epitaxial sheet up, and for guaranteeing the output of high quality epitaxial wafer, the CVD pallet design trends towards large size, large vol, the also corresponding increase of the volume of reaction chamber thereupon, this has just increased gas and has had the difficulty of uniform flow field, temperature field and concentration field.
The utility model content
The utility model is at the above-mentioned defective of prior art, a kind of CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth is provided, can grow up or down by the selective epitaxy sheet, and the uniform flow field of may command substrate aufwuchsplate annex gas, temperature field and concentration field.
In order to solve the problems of the technologies described above, the utility model is achieved through the following technical solutions:
A kind of CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth comprises carbon tube, silica tube, upper tray and lower tray, a motor, and lower tray bottom central authorities are provided with groove, and the groove top center is provided with through hole; The interior location that cooperates of groove of lower tray bottom is inserted in described carbon tube upper end; Silica tube is sheathed in the carbon tube, and the through hole UNICOM of the tube core of silica tube and groove top; The upper tray lower end is provided with the substrate groove that holds substrate, and lower tray upper end is provided with substrate groove that holds substrate and the back-up block that protrudes from the lower tray upper surface, and upper tray is located at the lower tray upper end, between be connected with back-up block; Described motor and carbon tube are in transmission connection.
Preferably, described lower tray is pressed several substrate grooves of central angle uniform distribution, and it is fan-shaped that back-up block is, and back-up block is evenly respectively between the two two substrates grooves, and the fan-shaped drift angle aligned through holes center of circle.
Preferably, the upper tray lower end that be provided with the substrate groove lower tray equal amts, and the substrate groove of the substrate groove of upper tray and lower tray is positioned on the same vertical line.
Preferably, the substrate trench bottom edge on the described upper tray is provided with button bit, and the upper end hides with graphite cover.
Preferably, described upper tray and lower tray are equipped with the calibration sign that is used to proofread and correct the orientation.
As can be seen from the above technical solutions, utilize the utility model, reactant gases can be poured into from silica tube, when gas rises to upper tray, change in the reaction chamber that forms between 90 ° of angle upper tray and the lower tray and cross, thus can be upwards at the substrate growing epitaxial sheet and the substrate growing epitaxial sheet that can be located at downwards on the lower tray be located on the upper tray.In addition, the utility model is under the driving of motor, drive carbon tube and upper and lower layer pallet rotate together, the effect of utilizing fluid viscous force to produce, gas near substrate rotates in company with pallet one, make the substrate that is installed in upper tray and be installed in air-flow between the lower tray to form uniform flow field, temperature field and concentration field from the center to the outer rim, thereby on substrate, form uniform epitaxial film.
Description of drawings
Fig. 1 is the utility model sectional view.
Fig. 2 is the utility model upper tray vertical view.
Fig. 3 is the utility model lower tray vertical view.
Fig. 4 is the utility model lower tray upward view.
Embodiment
Below in conjunction with embodiment the utility model is described in further detail.
Shown in Fig. 1 ~ 4, the utility model is used for the CVD graphite support holder structure of semiconductor epitaxial wafer growth, comprises carbon tube 1, silica tube 2, upper tray 3 and lower tray 4, one motor (not shown)s, lower tray bottom central authorities are provided with groove 41, and the groove top center is provided with through hole 42; The groove 41 interior location that cooperate of lower tray bottom are inserted in described carbon tube 1 upper end; Silica tube 2 is sheathed in the carbon tube 1, and through hole 42 UNICOMs of the tube core of silica tube and groove top; Upper tray 3 lower ends are provided with the substrate groove 31 that holds substrate, and lower tray 4 upper ends are provided with substrate groove 43 that holds substrate and the back-up block 44 that protrudes from the lower tray upper surface, and upper tray 3 is located at lower tray 4 upper ends, between be connected with back-up block 44; Described motor and carbon tube 1 are in transmission connection.
As preferred implementation of the present utility model, described lower tray 4 is pressed several substrate grooves 43 of central angle uniform distribution, back-up block 44 is fan-shaped, back-up block 44 is evenly respectively between the two two substrates grooves 43, and the center of circle of fan-shaped drift angle aligned through holes 42, the passage of the uniform gas communication of adjacent support surfaces intermediate formation, and reactant gases concentrated on the top of substrate groove 43 and the below of substrate groove 31.
As preferred implementation of the present utility model, upper tray 3 lower ends that be provided with substrate grooves 31 lower tray 4 equal amtss, and the substrate groove 43 of the substrate groove 31 of upper tray and lower tray is positioned on the same vertical line.
As preferred implementation of the present utility model, substrate groove 31 bottom margins on the described upper tray 3 are provided with button bit 32, and the upper end hides with graphite cover 33, and substrate is placed between button bit 32 and the graphite cover 33.
As preferred implementation of the present utility model, described upper tray 3 is provided with the calibration sign 34 and the lower tray 4 that are used to proofread and correct the orientation and is provided with the calibration sign 45 that is used to proofread and correct the orientation, when calibration sign 34 is alignd with calibration sign 45, the substrate groove 31 of upper tray is positioned on the same vertical line with the substrate groove 43 of lower tray, is positioned on the circulating direction of gas to guarantee substrate.
Above-mentioned specific embodiment is purpose, feature and the effect that is used for describing in detail the utility model, for the personage who is familiar with this type of skill, according to the above description, may do part change and modification to this specific embodiment, its essence does not detach the spiritual category person of the utility model, all should be included in the claim of this case suitable first Chen Ming.
Claims (5)
1. a CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth is characterized in that, comprises carbon tube, silica tube, upper tray and lower tray, a motor, and lower tray bottom central authorities are provided with groove, and the groove top center is provided with through hole; The interior location that cooperates of groove of lower tray bottom is inserted in described carbon tube upper end; Silica tube is sheathed in the carbon tube, and the through hole UNICOM of the tube core of silica tube and groove top; The upper tray lower end is provided with the substrate groove that holds substrate, and lower tray upper end is provided with substrate groove that holds substrate and the back-up block that protrudes from the lower tray upper surface, and upper tray is located at the lower tray upper end, between be connected with back-up block; Described motor and carbon tube are in transmission connection.
2. the CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth according to claim 1, it is characterized in that described lower tray is pressed several substrate grooves of central angle uniform distribution, it is fan-shaped that back-up block is, back-up block is evenly respectively between the two two substrates grooves, and the fan-shaped drift angle aligned through holes center of circle.
3. the CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth according to claim 2, it is characterized in that, the upper tray lower end that be provided with the substrate groove lower tray equal amts, and the substrate groove of the substrate groove of upper tray and lower tray is positioned on the same vertical line.
4. the CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth according to claim 3 is characterized in that the substrate trench bottom edge on the described upper tray is provided with button bit, and the upper end hides with graphite cover.
5. the CVD graphite support holder structure that is used for the semiconductor epitaxial wafer growth according to claim 4 is characterized in that, described upper tray and lower tray are equipped with the calibration sign that is used to proofread and correct the orientation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200937177U CN202039158U (en) | 2011-04-01 | 2011-04-01 | CVD graphite tray structure used for growing of semiconductor epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200937177U CN202039158U (en) | 2011-04-01 | 2011-04-01 | CVD graphite tray structure used for growing of semiconductor epitaxial wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202039158U true CN202039158U (en) | 2011-11-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200937177U Expired - Fee Related CN202039158U (en) | 2011-04-01 | 2011-04-01 | CVD graphite tray structure used for growing of semiconductor epitaxial wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103726103A (en) * | 2012-10-10 | 2014-04-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN105525344A (en) * | 2015-12-23 | 2016-04-27 | 中国科学院深圳先进技术研究院 | Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
-
2011
- 2011-04-01 CN CN2011200937177U patent/CN202039158U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103726103A (en) * | 2012-10-10 | 2014-04-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN103726103B (en) * | 2012-10-10 | 2016-04-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of reaction chamber |
| CN105525344A (en) * | 2015-12-23 | 2016-04-27 | 中国科学院深圳先进技术研究院 | Seed crystal tray and base station assembly for diamond monocrystal homoepitaxy, and application thereof |
| CN105525344B (en) * | 2015-12-23 | 2018-05-01 | 中国科学院深圳先进技术研究院 | Seed crystal tray, base station component and its application for diamond single crystal homoepitaxy |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111116 Termination date: 20120401 |