CN106486355B - A kind of wet etching method of InGaP - Google Patents
A kind of wet etching method of InGaP Download PDFInfo
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- CN106486355B CN106486355B CN201611180884.9A CN201611180884A CN106486355B CN 106486355 B CN106486355 B CN 106486355B CN 201611180884 A CN201611180884 A CN 201611180884A CN 106486355 B CN106486355 B CN 106486355B
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- wet etching
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000001039 wet etching Methods 0.000 title claims abstract description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 38
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 16
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 8
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 38
- 230000015556 catabolic process Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003503 early effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to semiconductor manufacturing industry technical field more particularly to a kind of wet etching method of InGaP, include the following steps: to grow InGaP layers on substrate or epitaxial layer；Substrate or epitaxial layer are performed etching using wet etching method, and grow SiN layer on InGaP layers；SiN layer is etched using reactive ion beam etching (RIBE) method；Using dilute hydrochloric acid cleaning wafer surface, oxide on surface thin layer is removed；Using weak ammonia liquor cleaning wafer surface, remaining H after dilute hydrochloric acid processing crystal column surface is removed+Ion, and OH- is hung up to dangling bonds；Using the mix acid liquor of concentrated hydrochloric acid and phosphoric acid, InGaP layers are etched；Using weak ammonia liquor cleaning wafer surface, remaining H after InGaP processing crystal column surface is removed+Ion, and OH- is hung up to dangling bonds, to be effectively removed influence of the preceding road technique to InGaP layer surface, guarantee going on smoothly for HBT technique.
Description
Technical field
The present invention relates to semiconductor manufacturing industry technical field more particularly to a kind of wet etching methods of InGaP.
Background technique
GaAs is the semiconductor material that most important, purposes is most wide in group Ⅲ-Ⅴ compound semiconductor.Electronics in GaAs moves
Shifting rate is 6 times of electron mobility in silicon (Si), and electronics peak shift speed is 2 times of Si.Therefore GaAs device has height
Frequently, high speed, low-power consumption, noise it is small, can single-chip integration the characteristics of.
Smart phone, base station largely use GaAs HBT device, have the following advantages that (source doctoral thesis: InGaP/
The research of GaAs HBT Microwave device and VCO circuit):
1. single positive supply work.Unlike the FET and HEMT device of depletion type, to make its channel pinch off that must just add one
A negative voltage.The cut-in voltage of HBT is all positive, it is only necessary to a positive supply job, it is possible thereby to simplify circuit design.
2. power density is high.When frequency is less high, power added efficiency (PAE) is also larger.
3. breakdown voltage is high.The forbidden bandwidth of HBT collecting zone material is big, by designing the thickness of collecting zone and adulterating dense
Available high breakdown voltage is spent, to increase output power.Also, determine that the collector junction (BC knot) of HBT breakdown voltage is anti-
It is mainly determined to breakdown voltage by epitaxial material parameter, not vulnerable to the influence of technical process.
4. Early effect (the wide change effect in base area) and Kirk effect (effective base region expansion effect) are small, therefore have preferably
The linearity.
5. lower to the requirement of photoetching when HBT element manufacturing, general features is having a size of 1 μm ~ 2 μm.Due to the key of HBT
Size base area thickness is determined by epitaxy layer thickness, avoids the difficulty of FET and HEMT sub-micron photoetching, to improve device
Uniformity and yield rate.
Currently, InGaP/GaAs becomes the mainstream of GaAs system HBT.Compared with traditional AIGaAs/GaAs HBT, InGaP/
GaAs HBT mainly has following advantage:
1. In0.49Ga0.51P and GaAS Lattice Matching, forbidden bandwidth reaches 1.91eV at room temperature, and breakdown voltage is larger, from
And be conducive to microwave power application.
2. InGaP is free of Al and related defects, there are lower surface recombination rate, less deep energy level complex centre, make device
The stability and better reliability of part.
3. being easier to realize selective corrosion between InGaP and GaAs, device preparation technology is more stable and easily-controllable.
Since GaAs HBT is vertical structure device, wet corrosion technique is the critical process of entire device.It is true
On, InGaP chemical property is stablized, in IC industry in common soda acid, generally using concentrated hydrochloric acid+phosphoric acid for etching
InGaP, concentrated hydrochloric acid: phosphoric acid ratio is 3:2 ~ 10:1, but since etch rate is too fast, generally in 100/s or more.Generally exist
In HBT device, InGaP is with a thickness of 50 ~ 5000.
For HBT technique, the etching of InGaP usually etches it in preceding road technique such as GaAs etching, SiN protective layer
Afterwards, since GaAs generally uses wet etching, and SiN generally uses the dry etching methods such as reactive ion beam etching (RIBE) (RIE), adds
The upper surface GaAs is easy to produce As/Ga oxide, influences InGaP etch rate, when serious etch rate be reduced to 10/s with
Under.
Summary of the invention
The embodiment of the present invention is solved and is being etched in the prior art by providing the wet etching method of InGaP a kind of
At InGaP layers, since preceding road technique has an impact to InGaP layer surface, to not can guarantee going on smoothly for HBT technique.
In order to solve the above technical problem, the present invention provides a kind of InGaP wet etching method, including walk as follows
It is rapid:
InGaP layers are grown on substrate or epitaxial layer；
Substrate or epitaxial layer are performed etching using wet etching method, and grow SiN layer on InGaP layers；
SiN layer is etched using reactive ion beam etching (RIBE) method；
Using dilute hydrochloric acid cleaning wafer surface, oxide on surface thin layer is removed；
Using weak ammonia liquor cleaning wafer surface, remaining H after dilute hydrochloric acid processing crystal column surface is removed+Ion, so that suspension
Key hangs up OH-；
Using the mix acid liquor of concentrated hydrochloric acid and phosphoric acid, InGaP layers are etched；
Using weak ammonia liquor cleaning wafer surface, remaining H after InGaP processing crystal column surface is removed+Ion, so that dangling bonds
Hang up OH-.
Using one or more technical solution in the present invention, have the following beneficial effects:
The wet etching method for the InGaP that the present invention uses grows InGaP layers, so first on substrate or epitaxial layer
Afterwards, substrate or epitaxial layer are performed etching using wet etching method, and grows SiN layer on the InGaP layers, then, used
Reactive ion beam etching (RIBE) method can be SiN layer, then, by dilute hydrochloric acid cleaning wafer surface, removes oxide on surface film, adopts
If with ammonium hydroxide cleaning wafer surface, remaining H after removal dilute hydrochloric acid processing crystal column surface+Ion, so that dangling bonds hang up OH-,
Device surface is protected, then, using the mix acid liquor of concentrated hydrochloric acid and phosphoric acid, etches InGaP layers, it is finally brilliant using weak ammonia liquor cleaning
Circular surfaces remove remaining H after InGaP layers of processing crystal column surface+Ion protects device surface so that dangling bonds hang up OH-,
To be effectively removed influence of the preceding road technique to InGaP layer surface, guarantee going on smoothly for HBT technique.
Detailed description of the invention
Fig. 1 is the step flow diagram of the wet etching method of InGaP in the embodiment of the present invention.
Specific embodiment
The embodiment of the present invention is solved and is being etched in the prior art by providing the wet etching method of InGaP a kind of
At InGaP layers, since preceding road technique has an impact to InGaP layer surface, to not can guarantee going on smoothly for HBT technique.
In order to solve the above-mentioned technical problem, in conjunction with appended figures and specific embodiments to of the invention
Technical solution is described in detail.
The present invention provides the wet etching methods of InGaP a kind of, as shown in Figure 1, comprising: S101, in substrate or extension
InGaP layers are grown on layer, the material of the substrate is any one in GaAs, InP, Si, SiC, which is specially GaAs
Any one in epitaxial layer, InP epitaxial layer, the InGaP layers with a thickness of 100 ~ 1 μm.
Then, S102 performs etching substrate or epitaxial layer using wet etching method, and grows SiN on InGaP layers
Layer controls temperature at 200 DEG C ~ 600 DEG C, generates specifically growing SiN layer using chemical vapor deposition, reactive sputtering method
SiN layer with a thickness of 200 ~ 1 μm.
Then, S103 etches SiN layer using reactive ion beam method (RIE).
Above-mentioned is the preceding road technique before InGaP layers of etching, and the efficiency due to the preceding road technique to InGaP layers of etching has
It influences, therefore, continues subsequent processing step.
S104 removes oxide on surface thin layer using dilute hydrochloric acid cleaning wafer surface.Wherein, in the dilute hydrochloric acid hydrochloric acid with
The range of the mass concentration ratio of water is 1:500 ~ 1:10.
Then, S105 is executed, using weak ammonia liquor cleaning wafer surface, removes remaining H after dilute hydrochloric acid processing crystal column surface+
Ion, so that dangling bonds hang up OH-, to protect device surface.The range of the mass concentration ratio of ammonium hydroxide and water in the weak ammonia liquor
For 1:500 ~ 1:10.
Then, S106 is executed, using the mix acid liquor of concentrated hydrochloric acid and phosphoric acid, etches InGaP layers.The concentrated hydrochloric acid and phosphoric acid
The mass concentration ratio range of concentrated hydrochloric acid and phosphoric acid is 3:2 ~ 10:1 in mix acid liquor.
Finally, executing S107, using weak ammonia liquor cleaning wafer surface, remaining H after InGaP processing crystal column surface is removed+
Ion, so that dangling bonds hang up OH-, to protect device surface.
Crystal column surface can effectively be removed using weak ammonia liquor and dilute hydrochloric acid by above-mentioned scheme, guarantee InGaP just
Often etching.In this way, avoiding influence of the preceding road technique to InGaP layer surface, guarantee going on smoothly for HBT technique.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (8)
1. a kind of wet etching method of InGaP, which comprises the steps of:
InGaP layers are grown on substrate or epitaxial layer；
Substrate or epitaxial layer are performed etching using wet etching method, and grow SiN layer on InGaP layers；
SiN layer is etched using reactive ion beam etching (RIBE) method；
Using dilute hydrochloric acid cleaning wafer surface, oxide on surface thin layer is removed；
Using weak ammonia liquor cleaning wafer surface, remaining H after dilute hydrochloric acid processing crystal column surface is removed+Ion, so that dangling bonds are hung up
OH-；
Using the mix acid liquor of concentrated hydrochloric acid and phosphoric acid, InGaP layers are etched；
Using weak ammonia liquor cleaning wafer surface, remaining H is removed+Ion, so that dangling bonds hang up OH-.
2. the wet etching method of InGaP according to claim 1, which is characterized in that the material of the substrate be GaAs,
Any one in InP, Si, SiC.
3. the wet etching method of InGaP according to claim 1, which is characterized in that the epitaxial layer is specially GaAs
Any one in epitaxial layer, InP epitaxial layer.
4. the wet etching method of InGaP according to claim 1, which is characterized in that described InGaP layers with a thickness of
100 Å~1μm。
5. the wet etching method of InGaP according to claim 1, which is characterized in that described to be grown on InGaP layers
SiN layer grows SiN layer using chemical vapor deposition or reactive sputtering method specially on InGaP layer, controls temperature 200
DEG C ~ 600 DEG C, the SiN layer of generation is with a thickness of 200 ~ 1 μm.
6. the wet etching method of InGaP according to claim 1, which is characterized in that hydrochloric acid and water in the dilute hydrochloric acid
Mass concentration ratio range be 1:500 ~ 1:10.
7. the wet etching method of InGaP according to claim 1, which is characterized in that ammonium hydroxide and water in the weak ammonia liquor
Mass concentration ratio range be 1:500 ~ 1:10.
8. the wet etching method of InGaP according to claim 1, which is characterized in that the concentrated hydrochloric acid and phosphoric acid it is mixed
It closes in acid solution, the mass concentration ratio range of concentrated hydrochloric acid and phosphoric acid is 3:2 ~ 10:1.
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| CN107958926B (en) * | 2017-11-22 | 2020-07-07 | 成都海威华芯科技有限公司 | Reworking manufacturing method of base electrode base in heterojunction bipolar transistor device |
| CN112133626B (en) * | 2020-10-12 | 2023-06-06 | 成都海威华芯科技有限公司 | Manufacturing method of metal hard mask and wafer |
| CN114420815A (en) * | 2021-12-29 | 2022-04-29 | 上海至纯洁净系统科技股份有限公司 | Marginal wet processing method for improving light extraction efficiency of LED device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106067421A (en) * | 2016-08-11 | 2016-11-02 | 成都海威华芯科技有限公司 | The method reducing GaN high electron mobility transistor ohmic contact resistance rate |
| CN106206281A (en) * | 2016-08-23 | 2016-12-07 | 成都海威华芯科技有限公司 | The lithographic method of InGaP epitaxial layer |
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| US8329541B2 (en) * | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| JP6570009B2 (en) * | 2014-01-15 | 2019-09-04 | ザ リージェンツ オブ ザ ユニヴァシティ オブ ミシガン | Integration of epitaxial lift-off solar cells with a small parabolic concentrator by printing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106067421A (en) * | 2016-08-11 | 2016-11-02 | 成都海威华芯科技有限公司 | The method reducing GaN high electron mobility transistor ohmic contact resistance rate |
| CN106206281A (en) * | 2016-08-23 | 2016-12-07 | 成都海威华芯科技有限公司 | The lithographic method of InGaP epitaxial layer |
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