JPH0113214B2 - - Google Patents
Info
- Publication number
- JPH0113214B2 JPH0113214B2 JP16007383A JP16007383A JPH0113214B2 JP H0113214 B2 JPH0113214 B2 JP H0113214B2 JP 16007383 A JP16007383 A JP 16007383A JP 16007383 A JP16007383 A JP 16007383A JP H0113214 B2 JPH0113214 B2 JP H0113214B2
- Authority
- JP
- Japan
- Prior art keywords
- cylinder
- temperature
- wafer
- window
- quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010453 quartz Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims description 16
- 239000011733 molybdenum Substances 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000011109 contamination Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16007383A JPS6050917A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ温度制御装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16007383A JPS6050917A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ温度制御装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6050917A JPS6050917A (ja) | 1985-03-22 |
| JPH0113214B2 true JPH0113214B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-03-03 |
Family
ID=15707296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16007383A Granted JPS6050917A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ温度制御装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050917A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1983
- 1983-08-30 JP JP16007383A patent/JPS6050917A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6050917A (ja) | 1985-03-22 |
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