JPH01130503A - Thin-film thermistor - Google Patents
Thin-film thermistorInfo
- Publication number
- JPH01130503A JPH01130503A JP29004587A JP29004587A JPH01130503A JP H01130503 A JPH01130503 A JP H01130503A JP 29004587 A JP29004587 A JP 29004587A JP 29004587 A JP29004587 A JP 29004587A JP H01130503 A JPH01130503 A JP H01130503A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- oxide
- film thermistor
- coating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 239000011787 zinc oxide Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011247 coating layer Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000000843 powder Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は耐熱性の高い薄膜サーミスタに関するもので、
この薄膜サーミスタは電気オーブン、ガスオーブンなど
の温度センサとして利用される。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a thin film thermistor with high heat resistance.
This thin film thermistor is used as a temperature sensor for electric ovens, gas ovens, etc.
従来の技術
従来、薄膜サーミスタは、例えば、長井、他ナショナル
テクニカルレポート（Ｎａ ｔ １ｏｎａｌ Ｔｅｃ
ｈｎｉｃａｌ Ｒｅｐｏｒｔ）Ｖｏｌ、２９． （
１９８３）Ｐ、１４５に示されるように、アルミナなど
の平板状アルミナ基板の一方の表面に炭化ケイ素（Ｓｉ
Ｃ）膜と電極膜を形成した後、この電極膜にｐｔリード
線を接続し、さらに前述した平板状アルミナ基板の一方
の表面に硝子被覆層を設けて構成される。Conventional technology Conventionally, thin film thermistors have been described in, for example, the National Technical Report by Nagai et al.
hnical Report) Vol, 29. (
1983) P, 145, silicon carbide (Si) is deposited on one surface of a flat alumina substrate such as alumina.
C) After forming a film and an electrode film, a PT lead wire is connected to the electrode film, and a glass coating layer is further provided on one surface of the above-described flat alumina substrate.
発明が解決しようとする問題点
前記従来例に示されているように、リード線にｐｔ線が
用いられる。ｐｔリード線は電極膜との溶接性がよく、
また硝子とのなじみもよいなど多くの利点があるが、機
械的強度が弱（、また価格が高いという欠点があった。Problems to be Solved by the Invention As shown in the prior art example, a PT wire is used as the lead wire. The PT lead wire has good weldability with the electrode film,
Although it has many advantages such as good compatibility with glass, it also has the disadvantages of low mechanical strength (and high price).
また、硝子被覆層はＳｉＣ膜を結露、湿度など外部環境
から保護する。Further, the glass coating layer protects the SiC film from external environments such as dew condensation and humidity.
従来、硝子被覆層材料として酸化ケイ素、酸化鉛、酸化
カルシウム、酸化バリウム、酸化亜鉛、酸化ボロン、酸
化アルミニウムなどの種々の混合粉末が用いられて来た
。しかし、この硝子被覆層を形成するとき薄膜サーミス
タ素子と硝子被覆層とが反応して、抵抗温度特性が変化
し易いという欠点があった。。Conventionally, various mixed powders such as silicon oxide, lead oxide, calcium oxide, barium oxide, zinc oxide, boron oxide, and aluminum oxide have been used as materials for glass coating layers. However, when forming this glass coating layer, the thin film thermistor element and the glass coating layer react with each other, resulting in a drawback that the resistance temperature characteristics tend to change. .
本発明は、これら従来の欠点を解消した薄膜サーミスタ
を提供するものである。The present invention provides a thin film thermistor that eliminates these conventional drawbacks.
問題点を解決するための手段
前記問題点を解決する本発明の技術的手段は、リード線
にニッケル線を用い、熱膨張係数（３０〜８０）ｘ １
０−’／”（、ｃ”、酸化亜鉛、酸化ケイ素、酸化ボロ
ンを主成分とする焼成硝子被覆を形成して薄膜サーミス
タを構成する点にある。Means for Solving the Problems The technical means of the present invention for solving the above problems is to use a nickel wire as the lead wire, and have a coefficient of thermal expansion of (30 to 80) x 1.
The thin film thermistor is constructed by forming a fired glass coating containing zinc oxide, silicon oxide, and boron oxide as main components.
作用
本発明は上述したように、リード線にニッケル線が用い
られるので、機械的用度が強く、また価格も安くなる。Function: As described above, the present invention uses a nickel wire for the lead wire, so it is mechanically durable and inexpensive.
ニッケル線が電極膜に溶接された後、酸化亜鉛、酸化ケ
イ素、酸化ボロンを主成分とする硝子を約７００℃の温
度で焼成して硝子被被覆層が形成される。この硝子被覆
層は薄膜サーミスタ素子と殆ど反応しないので、薄膜サ
ーミスタ素子の受ける影響は小さくなる。この結果、硝
子被覆に起因する抵抗温度特性変化も小さくなる。After the nickel wire is welded to the electrode film, glass whose main components are zinc oxide, silicon oxide, and boron oxide is fired at a temperature of about 700° C. to form a glass coating layer. Since this glass coating layer hardly reacts with the thin film thermistor element, the effect on the thin film thermistor element is reduced. As a result, changes in resistance temperature characteristics due to the glass coating are also reduced.
実施例
図は本発明の一実施例を示す薄膜サーモスフの断面図で
ある。平板状アルミナ基板１の一方の表面にあらかじめ
Ａｕ−Ｐｔ厚膜電極膜２を形成し、その後スパッタ法に
よりＳｉＣ膜３を形成し、薄膜サーミスタ素子を構成し
た。The embodiment diagram is a sectional view of a thin film thermos film showing an embodiment of the present invention. An Au-Pt thick film electrode film 2 was formed in advance on one surface of a flat alumina substrate 1, and then a SiC film 3 was formed by sputtering to form a thin film thermistor element.
次に、ニッケルリード線４を電極膜２に溶接で接続した
。この後、更に絶縁性被覆層５として硝子被覆層を形成
して薄膜サーミスタを構成した。Next, the nickel lead wire 4 was connected to the electrode film 2 by welding. Thereafter, a glass coating layer was further formed as an insulating coating layer 5 to form a thin film thermistor.
ニッケルリード線４を電極膜２に溶接する場合、電極膜
２の熱容量は極めて小さいので、微小な溶接エネルギー
で両者を溶接する必要がある。このため、直径０．１５
ｍｍ以下のニッケル線が望ましい。When welding the nickel lead wire 4 to the electrode film 2, since the heat capacity of the electrode film 2 is extremely small, it is necessary to weld both together with minute welding energy. Therefore, the diameter is 0.15
A nickel wire of mm or less is desirable.
硝子被覆層を形成した後、直径０．１ｍｍのニッケル線
と直径Ｑ、１ｍｍのＰｔ線の引張強度を測定したところ
、前者は３００ｇ、後者は１５０ｇであった。このよう
に、ニッケルリード線４を用いることにより機械的強度
が増加するので、薄膜サーミスタの製造工程での取り扱
いが容易になるとともに、リード線の断線が低減され、
信頼性も向上する。After forming the glass coating layer, the tensile strength of a nickel wire with a diameter of 0.1 mm and a Pt wire with a diameter Q of 1 mm was measured, and the tensile strength of the former was 300 g and the latter was 150 g. As described above, the mechanical strength is increased by using the nickel lead wire 4, making it easier to handle in the manufacturing process of the thin film thermistor, and reducing breakage of the lead wire.
Reliability is also improved.
絶縁性被覆層５としては、熱膨張係数が（３０〜８０）
ｘ １０−’ ７℃で、酸化ケイ素、酸化ボロン、酸化
亜鉛などを主成分とする硝子粉末を焼成した硝子被覆層
が優れている。この絶縁性被覆層５は、薄膜サーミスタ
素子に形成されたとき、Ａｕ−Ｐｔ厚膜電極膜２、Ｓｉ
Ｃ膜３と反応しないので、硝子被覆属形成前後での抵抗
値、Ｂ定数変化とも±１％以下であった。この硝子被覆
層はクラ、り、ピンホールを発生せず、また接着性もよ
い。この硝子被覆層は、約７００℃で焼成して形成され
るが、この焼成の時に結晶化させると一層好ましい。結
晶化させることにより、無定形硝子に比べて耐熱性が向
上するからである。The insulating coating layer 5 has a thermal expansion coefficient of (30 to 80)
A glass coating layer obtained by firing glass powder containing silicon oxide, boron oxide, zinc oxide, etc. as a main component at x 10-' 7°C is excellent. When this insulating coating layer 5 is formed into a thin film thermistor element, the Au-Pt thick film electrode film 2, Si
Since it did not react with the C film 3, both the resistance value and the B constant change before and after the formation of the glass coating material were ±1% or less. This glass coating layer does not cause cracks, cracks, or pinholes, and has good adhesion. This glass coating layer is formed by firing at about 700°C, and it is more preferable to crystallize it during this firing. This is because crystallization improves heat resistance compared to amorphous glass.
このようにして構成された薄膜サーミスタは、３００℃
、特に、結晶化硝子被覆層の場合４００℃で１０００時
間の耐熱放置試験にかけられたが、抵抗値変化率は±３
％以下、またＢ定数変化率は±０．５％以下であり実用
上問題にならない程度であった。The thin film thermistor constructed in this way has a temperature of 300°C.
In particular, the crystallized glass coating layer was subjected to a heat resistance test at 400°C for 1000 hours, and the resistance change rate was ±3.
% or less, and the B constant change rate was less than ±0.5%, which was not a practical problem.
なお、感温抵抗体膜３としてＳｉＣ膜以外にも、Ｆｅ、
ニッケル、Ｃｏ、Ｍｎなどの複合酸化物膜、Ｓｉ膜など
を用いてもよい事は明らかである。In addition to the SiC film, as the temperature sensitive resistor film 3, Fe,
It is clear that a composite oxide film of nickel, Co, Mn, etc., a Si film, etc. may be used.
発明の効果
以上述べて来たように、本発明によれば次に示す効果が
得られる。Effects of the Invention As described above, according to the present invention, the following effects can be obtained.
（１）リード線にニッケル線が用いられているので、機
械的強度が増加すると共に価格が安（なる。(1) Nickel wire is used for the lead wire, which increases mechanical strength and lowers the price.
（２）熱膨張係数が（３０〜８０）ｘ １０−’／℃で
、酸化亜鉛、酸化ケイ素、酸化ボロンを主成分とする硝
子被覆は、薄膜サーミスタと殆ど反応しないので、硝子
被覆することによる抵抗値、Ｂ定数の変化が小さい。(2) A glass coating with a thermal expansion coefficient of (30 to 80) Changes in resistance value and B constant are small.
（３）特に、結晶化硝子被覆層の場合、４００℃の優れ
た耐熱性を示す(3) In particular, the crystallized glass coating layer exhibits excellent heat resistance at 400°C.
図は本発明の一実施例を示す薄膜サーミスタの断面図で
ある。
１・・・感温抵抗体膜、 ２・・・電極膜、３・・・感
温抵抗体、 ４・・・リード線、５・・・絶縁性被覆層
。
代理人の氏名 弁理士 中尾敏男 はか１名１− 手抜
状アルミナ某叔
３−意温抵抗体膜The figure is a sectional view of a thin film thermistor showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Temperature sensitive resistor film, 2... Electrode film, 3... Temperature sensitive resistor, 4... Lead wire, 5... Insulating coating layer. Name of agent: Patent attorney Toshio Nakao 1 person 1 - A certain uncle of Alumina 3 - Temperature resistor membrane
Claims (3)
膜が形成された薄膜サーミスタ素子と前記電極膜に接続
されたリード線と前記アルミナ基板の一方の表面に全面
に形成された絶縁性被覆層とから成り、前記リード線が
ニッケル線で構成され、また前記絶縁性被覆層が熱膨張
係数（３０〜８０）Ｘ１０＾−＾７／℃で、酸化亜鉛、
酸化ケイ素、酸化ボロンを主成分とする硝子の焼成硝子
被覆層で構成された薄膜サーミスタ。(1) A thin film thermistor element having an electrode film and a temperature-sensitive resistor film formed on one surface of an alumina substrate, a lead wire connected to the electrode film, and an insulator formed entirely on one surface of the alumina substrate. The lead wire is made of a nickel wire, and the insulating coating layer has a thermal expansion coefficient (30 to 80) x 10^-^7/°C and is made of zinc oxide,
A thin film thermistor consisting of a fired glass coating layer made of glass whose main components are silicon oxide and boron oxide.
求の範囲第１項記載の薄膜サーミスタ。(2) The thin film thermistor according to claim 1, wherein the nickel wire has a diameter of 0.15 mm or less.
範囲第１項記載の薄膜サーミスタ。(3) The thin film thermistor according to claim 1, wherein the insulating glass is made of crystallized glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29004587A JPH01130503A (en) | 1987-11-17 | 1987-11-17 | Thin-film thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29004587A JPH01130503A (en) | 1987-11-17 | 1987-11-17 | Thin-film thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01130503A true JPH01130503A (en) | 1989-05-23 |
Family
ID=17751069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29004587A Pending JPH01130503A (en) | 1987-11-17 | 1987-11-17 | Thin-film thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01130503A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010237156A (en) * | 2009-03-31 | 2010-10-21 | Shibaura Electronics Co Ltd | Temperature sensor for measurement |
-
1987
- 1987-11-17 JP JP29004587A patent/JPH01130503A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010237156A (en) * | 2009-03-31 | 2010-10-21 | Shibaura Electronics Co Ltd | Temperature sensor for measurement |
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