JPH01127911A - Speckle pattern interferometer - Google Patents

Speckle pattern interferometer

Info

Publication number
JPH01127911A
JPH01127911A JP28665487A JP28665487A JPH01127911A JP H01127911 A JPH01127911 A JP H01127911A JP 28665487 A JP28665487 A JP 28665487A JP 28665487 A JP28665487 A JP 28665487A JP H01127911 A JPH01127911 A JP H01127911A
Authority
JP
Japan
Prior art keywords
semiconductor laser
speckle pattern
interferometer
cylindrical lens
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28665487A
Other languages
Japanese (ja)
Inventor
Yuuji Akishiba
雄二 秋柴
Taiji Kuki
九鬼 泰治
Makoto Hirai
誠 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Keyence Corp
Original Assignee
Keyence Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Keyence Corp filed Critical Keyence Corp
Priority to JP28665487A priority Critical patent/JPH01127911A/en
Publication of JPH01127911A publication Critical patent/JPH01127911A/en
Pending legal-status Critical Current

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  • Length Measuring Devices By Optical Means (AREA)
  • Recording Measured Values (AREA)

Abstract

PURPOSE:To obtain an expensive and miniature speckle pattern interferometer which can project uniformly an object by providing a cylindrical lens for enlarging a beam from a semiconductor laser and converting an elliptical beam to a circular beam. CONSTITUTION:An elliptical beam from a semiconductor laser 1 is enlarged only in the rectangular direction by a cylindrical lens 4, becomes a circular beam, split into two by a beam splitter 5, and projects widely a reference rough surface 6 and an object to be measured 7, respectively. Subsequently, each diffused and reflected light from them is synthesized 5 again, and a formed speckle pattern SP is brought to image pickup by a TV camera 8. In that case, in an image processing circuit 9, the SP before deformation of the object 7 is stored in an image memory,and by taking a difference to an image of the SP after deformation, a non-linear conversion is executed and an interference line is emphasized, and based thereon, an out-of-plane displacement is displayed as a contour line of an interference fringe on a monitor 10. Accordingly, since a semiconductor is adopted as a light source so that its beam is enlarged only in a rectangular direction by the lens 4, the title interferometer can be miniaturized and manufactured at a low cost, and also, can project uniformly the object to be measured.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、スペ・7クル干渉法を用いて粗面の変位、
変形、振動等を測定するスペックルパターン干渉計に関
する。
[Detailed Description of the Invention] [Industrial Application Field] This invention uses speckle interferometry to measure the displacement of a rough surface,
This invention relates to a speckle pattern interferometer that measures deformation, vibration, etc.

〔従来の技術〕[Conventional technology]

従来のスペックル干渉法を用いたスペックルパターン干
渉計においては、第3図に示すような光学系で光源にH
e−Neレーザーやアルゴンレーザー等のガスレーザー
を用い、これらはビーム径が小さいためそのビームをビ
ーム拡大レンズを介して拡大して測定していた。また最
近では、装置のコンパクト化を図るため半導体レーザー
を光源に用いることも提案されている。
In a speckle pattern interferometer using the conventional speckle interferometry, an optical system as shown in Figure 3 is used to connect the light source to H.
A gas laser such as an e-Ne laser or an argon laser is used, and since these have a small beam diameter, the beam is expanded through a beam expansion lens for measurement. Recently, it has also been proposed to use a semiconductor laser as a light source in order to make the device more compact.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところが、これら2つの従来技術には各々次に述べるよ
うな問題点がある。まず光源にHe−Neレーザーやア
ルゴンレーザー等のガスレーザーを用いる場合には、装
置が大がかりとなり場所をとったり移動に不便となった
りするうえに、ガスレーザーは大変高価であるという問
題点がある。また光源に半導体レーザーを用いる場合に
は、安価で小型の製品が作れるが、ビームが楕円形に拡
がっているので対象物全体を無駄なく照らすことができ
ないという間9題点がある。
However, these two conventional techniques each have the following problems. First, when a gas laser such as a He-Ne laser or an argon laser is used as a light source, there are problems in that the apparatus is large-scale, takes up a lot of space, and is inconvenient to move, and gas lasers are very expensive. Furthermore, when a semiconductor laser is used as a light source, inexpensive and compact products can be made, but because the beam spreads out in an elliptical shape, it is impossible to illuminate the entire object without waste, which poses nine problems.

この発明は上記問題点に鑑みなされたものであり、安価
で小型で、且つ楕円形のビームが円形となり対象物を万
遍なく照らすことができるスペックルパターン干渉計を
提供することを目的とする。
This invention has been made in view of the above problems, and aims to provide a speckle pattern interferometer that is inexpensive, compact, and capable of turning an elliptical beam into a circular shape and uniformly illuminating an object. .

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決し、この目的を達成するための具体的
手段は、少なくともテレビカメラと、光源部と、ビーム
スプリッタとを有するスペックル干渉法を用いたスペッ
クルパターン干渉計において、前記光源部に半導体レー
ザーを使用し、該半導体レーザーからのビームを拡大す
るシリンドリカルレンズを具備Cたことである。
A specific means for solving the above problems and achieving this objective is to provide a speckle pattern interferometer using speckle interferometry that includes at least a television camera, a light source section, and a beam splitter. A semiconductor laser is used in the invention, and a cylindrical lens is provided to expand the beam from the semiconductor laser.

〔作  用〕[For production]

上記構成により半導体レーザーから出た楕円計のビーム
は第2図に示すようにシリンドリカルレンズにより楕円
率の小さい方向(短径方向)のみ拡大され、円形のビー
ムとなり対象物全体を万石なく照らすことができ、また
半導体レーザーを光源として用いたので装置の安価、小
型化がもたらされるものである。
With the above configuration, the ellipsometer beam emitted from the semiconductor laser is expanded by the cylindrical lens only in the direction of small ellipticity (minor axis direction), as shown in Figure 2, and becomes a circular beam that illuminates the entire object without fail. Moreover, since a semiconductor laser is used as a light source, the device can be made cheaper and smaller.

〔実 施 例〕 この発明を、以下一実施例に基づいて詳細に説明する。〔Example〕 This invention will be explained in detail below based on one embodiment.

第1図は本発明の一実施例としてのスペックル干渉計を
示し、1は半導体レーザーである。
FIG. 1 shows a speckle interferometer as an embodiment of the present invention, in which 1 is a semiconductor laser.

2は半導体レーザーの発振周波数を安定化させるために
半導体レーザーの温度を一定化するように作用するペル
チェ素子であり、3は温度制御回路で、例えば半導体レ
ーザーの近傍にサーミスタを埋め込み、半導体レーザー
の温度をモニタしながらペルチェ素子への駆動電流を制
御するように働くものである。4は半導体レーザーから
のビームの一方向のみを拡大する平凹形シリンドリカル
レンズであり、5は拡大された半導体レーザーからのビ
ームを二分し、該二分されたそれぞれのビームが6の参
照粗面と7の測定対象物を照らすように働くビームスプ
リッタである。6は基準となる参照粗面であり、7は当
該スペックルパターン干渉計における測定対象物である
。8は6の参照粗面からの反射光と7の測定対象物から
の反射光の干渉光を受けるテレビカメラであり、9は8
のテレビカメラからのビデオ信号を処理する画像処理回
路である。10は9の画像処理回路で処理された画像を
モニタ表示するためのモニタである。
2 is a Peltier element that acts to keep the temperature of the semiconductor laser constant in order to stabilize the oscillation frequency of the semiconductor laser, and 3 is a temperature control circuit, for example, by embedding a thermistor near the semiconductor laser, It works to control the drive current to the Peltier element while monitoring the temperature. 4 is a plano-concave cylindrical lens that expands the beam from the semiconductor laser in only one direction; 5 is a plano-concave cylindrical lens that divides the expanded beam from the semiconductor laser into two; This is a beam splitter that works to illuminate the object to be measured. 6 is a reference rough surface serving as a reference, and 7 is a measurement target in the speckle pattern interferometer. 8 is a television camera that receives interference light of the reflected light from the reference rough surface 6 and the reflected light from the measurement object 7;
This is an image processing circuit that processes video signals from a television camera. 10 is a monitor for displaying the image processed by the image processing circuit 9;

次に、以上のような構成により具現化される当該発明の
態様を以下に説明する。まず半導体レーザー1からの楕
円形のビームは平凹形シリンドリカルレンズ4で楕円率
の小さい方向のみ拡木すレ円形のビームとなる。該拡大
された半導体レーザーのビームはビームスプリッタ5で
二分され、−方は参照粗面6を、もう一方は測定対象物
7をそれぞれ幅広く照射する。そして測定対象物7から
の拡散反射光と参照粗面6からの拡散反射光とを再びビ
ームスプリッタ5で合成し、それによってできたスペア
クルパターンをテレビカメラ8で撮影する。その際画像
処理回路9において、測定対象物7の変形前のスペック
ルパターンをビデオ信号として画像メモリに貯え、変形
後のスペックルパターンの画像との差をとって干渉縞を
強調するために非線型変換がなされる。それに基づいて
面外変位(測定対象物表面に垂直な変形)が干渉縞の等
高線としてモニタ10に表示される。
Next, aspects of the invention realized by the above configuration will be described below. First, the elliptical beam from the semiconductor laser 1 is expanded by the plano-concave cylindrical lens 4 only in the direction of small ellipticity, and becomes a circular beam. The expanded semiconductor laser beam is split into two by a beam splitter 5, and the - side irradiates the rough reference surface 6 and the other beam irradiates the measurement object 7. Then, the diffusely reflected light from the measurement object 7 and the diffusely reflected light from the reference rough surface 6 are combined again by the beam splitter 5, and the resulting spare pattern is photographed by the television camera 8. At this time, in the image processing circuit 9, the speckle pattern of the measurement object 7 before deformation is stored in the image memory as a video signal, and the difference with the image of the speckle pattern after deformation is taken to emphasize the interference fringes. A linear transformation is performed. Based on this, out-of-plane displacement (deformation perpendicular to the surface of the object to be measured) is displayed on the monitor 10 as contour lines of interference fringes.

尚、当該実施例ではシリンドリカルレンズに平凹型のも
のを使用しているが、平凸型、両凹型、或いは両凸型の
ものでもよい。
In this embodiment, a plano-concave cylindrical lens is used, but a plano-convex, biconcave, or biconvex cylindrical lens may be used.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明のスペックルパターン干渉計
は光源に半導体レーザーを採用しその半導体レーザーの
ビームをシリンドリカルレンズで楕円率の小さい方向の
み拡大するようにしたので、装置の小型化が図れしかも
安価に製造でき、さらには測定対象物を万石なく照射す
ることができる。
As explained above, the speckle pattern interferometer of the present invention employs a semiconductor laser as a light source, and uses a cylindrical lens to expand the beam of the semiconductor laser only in the direction of small ellipticity. It can be manufactured at low cost, and moreover, it can irradiate the object to be measured without fail.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明に係わるスペックル干渉計のブロック
図、 第2図はシリンドリカルレンズを介することによるレー
ザー光の拡がり具合を示した図、第3図は従来のスペッ
クルパターン干渉計の構成図である。 ■・・・半導体レーザー、2・・・ペルチェ素子、3・
・・温度制御回路、4・・・平凹形シリンドリカルレン
ズ、5・・・ビームスプリッタ、6・・・参照粗面、7
・・・測定対象物、8・・・テレビカメラ、9・・・画
像処理回路、10・・・モニタ、11・・・ガスレーザ
ー、12・・・ビーム拡大レンズ。 特許出願人  株式会社キーエンス 第1図 ア 第2図 (a)  短径方向 (b)  長径方向 第3図 ア /
Fig. 1 is a block diagram of a speckle interferometer according to the present invention, Fig. 2 is a diagram showing the spread of laser light through a cylindrical lens, and Fig. 3 is a block diagram of a conventional speckle pattern interferometer. It is. ■... Semiconductor laser, 2... Peltier element, 3...
... Temperature control circuit, 4... Plano-concave cylindrical lens, 5... Beam splitter, 6... Reference rough surface, 7
... Measurement object, 8 ... Television camera, 9 ... Image processing circuit, 10 ... Monitor, 11 ... Gas laser, 12 ... Beam expansion lens. Patent applicant: KEYENCE CORPORATION Fig. 1A Fig. 2 (a) Short axis direction (b) Long axis direction Fig. 3 A/

Claims (1)

【特許請求の範囲】[Claims] (1)少なくともテレビカメラと、光源部と、ビームス
プリッタとを有するスペックル干渉法を用いた一体型の
スペックルパターン干渉計において、前記光源部に半導
体レーザーを使用し、 該半導体レーザーからのビームを拡大するシリンドリカ
ルレンズを具備したことを特徴とするスペックルパター
ン干渉計。
(1) In an integrated speckle pattern interferometer using speckle interferometry that includes at least a television camera, a light source section, and a beam splitter, a semiconductor laser is used for the light source section, and a beam from the semiconductor laser is used. A speckle pattern interferometer characterized by being equipped with a cylindrical lens that magnifies.
JP28665487A 1987-11-12 1987-11-12 Speckle pattern interferometer Pending JPH01127911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28665487A JPH01127911A (en) 1987-11-12 1987-11-12 Speckle pattern interferometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28665487A JPH01127911A (en) 1987-11-12 1987-11-12 Speckle pattern interferometer

Publications (1)

Publication Number Publication Date
JPH01127911A true JPH01127911A (en) 1989-05-19

Family

ID=17707224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28665487A Pending JPH01127911A (en) 1987-11-12 1987-11-12 Speckle pattern interferometer

Country Status (1)

Country Link
JP (1) JPH01127911A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997029340A1 (en) * 1996-02-05 1997-08-14 The Secretary Of State For Trade & Industry Interferometer
WO2019193788A1 (en) * 2018-04-05 2019-10-10 株式会社島津製作所 Vibration measurement device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143660A (en) * 1978-04-28 1979-11-09 Canon Inc Optical system for semiconductor laser
JPS5660306A (en) * 1979-10-23 1981-05-25 Mitsutoyo Mfg Co Ltd Laser interferometer and its measuring method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143660A (en) * 1978-04-28 1979-11-09 Canon Inc Optical system for semiconductor laser
JPS5660306A (en) * 1979-10-23 1981-05-25 Mitsutoyo Mfg Co Ltd Laser interferometer and its measuring method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997029340A1 (en) * 1996-02-05 1997-08-14 The Secretary Of State For Trade & Industry Interferometer
WO2019193788A1 (en) * 2018-04-05 2019-10-10 株式会社島津製作所 Vibration measurement device
JPWO2019193788A1 (en) * 2018-04-05 2021-04-15 株式会社島津製作所 Vibration measuring device
EP3779378A4 (en) * 2018-04-05 2021-06-16 Shimadzu Corporation Vibration measurement device
US12111266B2 (en) 2018-04-05 2024-10-08 Shimadzu Corporation Vibration measurement device

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