JPH01124857A - イオンビーム加工装置 - Google Patents

イオンビーム加工装置

Info

Publication number
JPH01124857A
JPH01124857A JP63244068A JP24406888A JPH01124857A JP H01124857 A JPH01124857 A JP H01124857A JP 63244068 A JP63244068 A JP 63244068A JP 24406888 A JP24406888 A JP 24406888A JP H01124857 A JPH01124857 A JP H01124857A
Authority
JP
Japan
Prior art keywords
ion beam
sample
ion
spot
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63244068A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427539B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Yamaguchi
博司 山口
Takeoki Miyauchi
宮内 健興
Akira Shimase
朗 嶋瀬
Mikio Hongo
幹雄 本郷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63244068A priority Critical patent/JPH01124857A/ja
Publication of JPH01124857A publication Critical patent/JPH01124857A/ja
Publication of JPH0427539B2 publication Critical patent/JPH0427539B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP63244068A 1988-09-30 1988-09-30 イオンビーム加工装置 Granted JPH01124857A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63244068A JPH01124857A (ja) 1988-09-30 1988-09-30 イオンビーム加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63244068A JPH01124857A (ja) 1988-09-30 1988-09-30 イオンビーム加工装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56153806A Division JPS5856332A (ja) 1981-09-30 1981-09-30 マスクの欠陥修正方法

Publications (2)

Publication Number Publication Date
JPH01124857A true JPH01124857A (ja) 1989-05-17
JPH0427539B2 JPH0427539B2 (enrdf_load_stackoverflow) 1992-05-12

Family

ID=17113259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63244068A Granted JPH01124857A (ja) 1988-09-30 1988-09-30 イオンビーム加工装置

Country Status (1)

Country Link
JP (1) JPH01124857A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0375651A (ja) * 1989-08-16 1991-03-29 Matsushita Electron Corp パターン修正装置
WO2009022603A1 (ja) * 2007-08-10 2009-02-19 Sii Nanotechnology Inc. フォトマスクの欠陥修正方法および装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0375651A (ja) * 1989-08-16 1991-03-29 Matsushita Electron Corp パターン修正装置
WO2009022603A1 (ja) * 2007-08-10 2009-02-19 Sii Nanotechnology Inc. フォトマスクの欠陥修正方法および装置

Also Published As

Publication number Publication date
JPH0427539B2 (enrdf_load_stackoverflow) 1992-05-12

Similar Documents

Publication Publication Date Title
JPH0425531B2 (enrdf_load_stackoverflow)
USRE33193E (en) Ion beam processing apparatus and method of correcting mask defects
US4609809A (en) Method and apparatus for correcting delicate wiring of IC device
US5035787A (en) Method for repairing semiconductor masks and reticles
JP2008112999A (ja) 荷電粒子露光装置
KR910007533B1 (ko) X선 마스크의 결함 수정 방법 및 그 장치
TWI803572B (zh) 帶電粒子束裝置、試料加工觀察方法
KR930001493B1 (ko) 반도체 장치 패터닝용 광전자 전사장치
US4924104A (en) Ion beam apparatus and method of modifying substrate
JPH11213934A (ja) 集束イオンビームによる二次イオン像観察方法
JPH0428097B2 (enrdf_load_stackoverflow)
JPH10162769A (ja) イオンビーム加工装置
JPH01124857A (ja) イオンビーム加工装置
JPH01124856A (ja) マスクの欠陥修正方法
JP3531323B2 (ja) イオンビーム加工方法および装置
JPS63170940A (ja) Ic素子の修正方法
JP2829231B2 (ja) Ic素子の修正方法
JPH09186138A (ja) イオンビーム加工装置
JPH0729535A (ja) 集束イオンビーム加工装置および加工方法
JP2829232B2 (ja) Ic素子の加工装置
JPH0260A (ja) イオンビーム加工装置
JPH06244179A (ja) Ic素子の修正方法
JP2590703B2 (ja) イオンビーム加工装置
JPH08153721A (ja) Ic素子の修正方法及びその装置
JPH03122643A (ja) イオンビーム加工方法