JPH01123352U - - Google Patents

Info

Publication number
JPH01123352U
JPH01123352U JP1887388U JP1887388U JPH01123352U JP H01123352 U JPH01123352 U JP H01123352U JP 1887388 U JP1887388 U JP 1887388U JP 1887388 U JP1887388 U JP 1887388U JP H01123352 U JPH01123352 U JP H01123352U
Authority
JP
Japan
Prior art keywords
insulating spacer
cooling device
heat radiator
semiconductor element
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1887388U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1887388U priority Critical patent/JPH01123352U/ja
Publication of JPH01123352U publication Critical patent/JPH01123352U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
第1図はこの考案の一実施例による半導体冷却
装置の正面図、第2図は従来の半導体冷却装置の
正面図を示す。 図において、1は絶縁スペーサ、2は素子、3
は窒化アルミニウム製焼結体、4は冷却フイン、
5は銅のメタライズ部(接触面)を示す。なお、
図中、同一符号は同一、又は相当部分を示す。

Claims (1)

    【実用新案登録請求の範囲】
  1. フラツトパツケージ型の半導体素子を窒化アル
    ミニウム製焼結体の絶縁スペーサを介して冷却用
    放熱体で冷却する半導体冷却装置において、上記
    絶縁スペーサの上記半導体素子および上記冷却用
    放熱体との接触面を熱伝導の良い金属でメタライ
    ズしたことを特徴とする半導体冷却装置。
JP1887388U 1988-02-15 1988-02-15 Pending JPH01123352U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1887388U JPH01123352U (ja) 1988-02-15 1988-02-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1887388U JPH01123352U (ja) 1988-02-15 1988-02-15

Publications (1)

Publication Number Publication Date
JPH01123352U true JPH01123352U (ja) 1989-08-22

Family

ID=31233897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1887388U Pending JPH01123352U (ja) 1988-02-15 1988-02-15

Country Status (1)

Country Link
JP (1) JPH01123352U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0969594A (ja) * 1995-06-23 1997-03-11 Toshiba Corp 圧接用窒化けい素放熱板およびそれを用いた圧接構造部品

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135948A (en) * 1980-03-28 1981-10-23 Denki Kagaku Kogyo Kk Insulated radiating substrate
JPS6258664A (ja) * 1985-09-09 1987-03-14 Toshiba Corp 放熱性絶縁基板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135948A (en) * 1980-03-28 1981-10-23 Denki Kagaku Kogyo Kk Insulated radiating substrate
JPS6258664A (ja) * 1985-09-09 1987-03-14 Toshiba Corp 放熱性絶縁基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0969594A (ja) * 1995-06-23 1997-03-11 Toshiba Corp 圧接用窒化けい素放熱板およびそれを用いた圧接構造部品

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