JPH01116465U - - Google Patents
Info
- Publication number
- JPH01116465U JPH01116465U JP1988011412U JP1141288U JPH01116465U JP H01116465 U JPH01116465 U JP H01116465U JP 1988011412 U JP1988011412 U JP 1988011412U JP 1141288 U JP1141288 U JP 1141288U JP H01116465 U JPH01116465 U JP H01116465U
- Authority
- JP
- Japan
- Prior art keywords
- output terminal
- photovoltaic device
- terminal portions
- transparent electrode
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 239000004634 thermosetting polymer Substances 0.000 claims description 2
- 238000010248 power generation Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/0554—External layer
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- H01L2224/05556—Shape in side view
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
第1図は、本考案の実施例を示す高さ方向を拡
大して示した光起電力装置の一部切欠斜視図、第
2図aは、本考案の実施例と比較例について行な
つた半田濡れ性試験の結果を示すグラフ、同図b
は、前記半田濡れ性試験の要領を示す図面、第3
図aは、本考案の実施例と比較例について行なつ
た半田付け部の引張強度試験の結果を示すグラフ
、同図bは、前記引張試験の要領を示す図面、第
4図は、従来例を示す高さ方向を拡大して示した
光起電力装置の一部切欠斜視図である。
11…基板、12…透明電極、12a…透明電
極側の出力端子部、13…非晶質半導体層、14
…背面電極、14a…背面電極側の出力端子部、
16…熱硬化性ポリマー型導体層。
Figure 1 is a partially cutaway perspective view of a photovoltaic device showing an example of the present invention, enlarged in the height direction, and Figure 2a is a diagram showing the example of the present invention and a comparative example. Graph showing the results of the solder wettability test, Figure b
is a drawing showing the outline of the solder wettability test, Part 3
Figure a is a graph showing the results of a tensile strength test of soldered parts conducted on the embodiment of the present invention and a comparative example, Figure b is a drawing showing the procedure of the tensile test, and Figure 4 is a conventional example. FIG. 2 is a partially cutaway perspective view of the photovoltaic device shown in an enlarged view in the height direction. DESCRIPTION OF SYMBOLS 11... Substrate, 12... Transparent electrode, 12a... Output terminal part on the transparent electrode side, 13... Amorphous semiconductor layer, 14
...back electrode, 14a...output terminal section on the back electrode side,
16...Thermosetting polymer type conductor layer.
Claims (1)
んで透明電極12と背面電極14とを積層+成膜
した発電区域を、単一又は複数形成すると共に、
前記電極12,14の各々に電気的に導通する出
力端子部12a,14aを設けた光起電力装置に
おいて、前記出力端子部12a,14aの上面に
加熱硬化性ポリマー型導電層16が設けられたこ
とを特徴とする光起電力装置。 Forming one or more power generation areas on one main surface of the substrate 11 in which the transparent electrode 12 and the back electrode 14 are laminated and deposited with the amorphous semiconductor layer 13 in between,
In a photovoltaic device including output terminal portions 12a, 14a electrically connected to the electrodes 12, 14, a thermosetting polymer conductive layer 16 is provided on the upper surface of the output terminal portions 12a, 14a. A photovoltaic device characterized by:
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988011412U JPH01116465U (en) | 1988-01-30 | 1988-01-30 | |
GB8812887A GB2214711B (en) | 1988-01-30 | 1988-05-31 | Photovoltaic cell |
HK904/92A HK90492A (en) | 1988-01-30 | 1992-11-19 | Photovoltaic cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988011412U JPH01116465U (en) | 1988-01-30 | 1988-01-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01116465U true JPH01116465U (en) | 1989-08-07 |
Family
ID=11777314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988011412U Pending JPH01116465U (en) | 1988-01-30 | 1988-01-30 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH01116465U (en) |
GB (1) | GB2214711B (en) |
HK (1) | HK90492A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4340402C2 (en) * | 1993-11-26 | 1996-01-11 | Siemens Solar Gmbh | Method for contacting thin-film solar modules |
JP2546530B2 (en) * | 1993-12-24 | 1996-10-23 | 日本電気株式会社 | LOC structure semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59167072A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Series-connected type thin film solar battery |
JPS59167056A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Silicon semiconductor electrode |
-
1988
- 1988-01-30 JP JP1988011412U patent/JPH01116465U/ja active Pending
- 1988-05-31 GB GB8812887A patent/GB2214711B/en not_active Expired - Fee Related
-
1992
- 1992-11-19 HK HK904/92A patent/HK90492A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59167072A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Series-connected type thin film solar battery |
JPS59167056A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Silicon semiconductor electrode |
Also Published As
Publication number | Publication date |
---|---|
HK90492A (en) | 1992-11-27 |
GB8812887D0 (en) | 1988-07-06 |
GB2214711A (en) | 1989-09-06 |
GB2214711B (en) | 1992-02-05 |