GB2214711A - Attaching lead wires to a photovoltaic cell - Google Patents
Attaching lead wires to a photovoltaic cell Download PDFInfo
- Publication number
- GB2214711A GB2214711A GB8812887A GB8812887A GB2214711A GB 2214711 A GB2214711 A GB 2214711A GB 8812887 A GB8812887 A GB 8812887A GB 8812887 A GB8812887 A GB 8812887A GB 2214711 A GB2214711 A GB 2214711A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photovoltaic cell
- transparent electrode
- electrode
- semiconductor layer
- backside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 17
- 239000004634 thermosetting polymer Substances 0.000 claims abstract description 16
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 28
- 229910000679 solder Inorganic materials 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 42
- 239000007789 gas Substances 0.000 description 9
- 230000004907 flux Effects 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000007865 diluting Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010019 resist printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
A thermosetting polymer conductive layer (16) is formed on each nickel metallized output terminal (12a, 14a) of a photovoltaic cell and lead wires (18, 18) are soldered thereto to give a connection of improved strength and durability. <IMAGE>
Description
SPECIFICATION
PHOTOVOLTAIC CELL
BACKGROUND OF THE INVENTION 1. Field of the Invention:
The present invention relates to an photovoltaic cell for generating electricity by irradiation of light.
2. Description of the Prior Art:
A conventional photovoltaic cell will be described with reference to Fig. 4.
The photovoltaic cell comprises a transparent substrate 1, a plurality of transparent electrodes 2 adhered on the transparent substrate 1, a plurality of amorphous p-i-n junction semiconductor layers 3 filmed on the transparent electrodes 2, and a plurality of metal electrodes 4 made of nickel, alminium or the like adhered on the amorphous semiconductor layers 3. The transparent electrodes 2 and the metal electrodes 4 sandwitching the semiconductors 3 form respectively generator areas. Each output of the generator areas may be supplied from the portion guided from the semiconductor layers 3 and extended from the transparent electrodes 2 and the metal electrodes 4, namely, from output terminals 2a, 4a of the transparent electrodes 2 and the metal electrodes 4.
A protection film 5 made of mainly epoxy resin and the like is applied on the substrate 1 to layer substantially the transparent electrodes 2, the semiconductor layers 3, and the metal electrodes 4 so that the output terminals 2a and 4a are exposed to the outside.
Over the output terminals 2a, 4a provided metal layers 6, 6 for subjecting soldering thereon. The metal layers 6, 6 are metal layered films made of nickel or layered films upper layer of which is made of nickel or combination of nickel and an electrode.
A solder 7 is preferable to be a flux contained solder when subjecting soldering lead wires 8 on the metal layeres 6, 6 with use of the solder 7.
However, there are following drawbacks in the conventional photovoltaic cell although there is an advantage to utilize the flux contained solder when the metal layers 6, 6 are formed.
First, when the nickel film is formed to adhere on the semiconductor layers 3, the method for forming film under vacuum such as metallizing and sputtering which result in low productivity with high cost. Although it is possible to employ an electrolytic plating method or an electroless plating method for forming the nickel layer, however the semiconductor layers 3 may be immersed into a plating solution which results in damaging the semiconductor layers 3.
Accordingly, the latter method can not be actually adopted.
The nickel film thus formed is easily oxidizable at its surface under the condition of high temperature and high humidity. Hence, although it is possible to connect the lead wires 8 to the nickel film just after soldering is subjected, it becomes impossible to connect the lead wires 8 to the nickel film by the flux contained solder 7 provided that the nickel film was exposed to high temperature and high humidity for a long period of time.
SUMMARY OF THE INVENTION
In view of the drawbacks as just mentioned above, it is an object of the present invention to provide an photovoltaic cell having a thermosetting polymer conductive layer formed on output terminals of the photovoltaic cell to which lead wires are connected by a flux contained solder which are not likely to be inferior under the condition of high temperature and high humidity.
To achieve the above object, the photovoltaic cell of the present invention comprises a substrate, transparent electrodes formed and layered on the substrate, amorphous semiconductor layers formed and layered on the transparent electrodes, and backside electrodes formed and layered on the semiconductor layers at the location opposite to the transparent electrodes in the manner of sandwiching the amorphous semiconductors. The transparent electrodes, the amorphous semiconductors and the backside electrodes form respectively generator areas. A single generator areas may be formed by comprising a single transparent electrode, a single backside electrode sandwiching single layer semiconductor layer.The photovoltaic cell further includes output terminals provided on the transparent electrodes and the backside electrodes for supplying an output from the photovoltaic cell, and the thermosetting polymer conductive layer formed on each output terminal haing lead wires soldered thereon by a solder. The thermosetting polymer conductive layer is formed by layering a conductive adhesive made of mainly the thermosetting polymer conductive layer and conductor powder on the output terminals of the transparent electrodes and the backside electrodes in the manner of printing and the like and hardening.
The output terminals having the thermosetting polymer conductive layer on the upper surface thereof can be connected to lead wires with ease by flux contained solders. Wettability of solders on the output terminals is satisfactory and adhesiveness of the solder fixes to the output terminals is strong as described later.
Wettability and adhesiveness of the solder are not deteriorated in quality thereof.
The above and other objects, features and advantages of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a perspective view with a part of an photovoltaic cell being cut off according to an embodiment of the present invention;
Fig. 2(a) is a graph showing a wettability test of a solder of the present embodiment and an comparative embodiment;
Fig. 2(b) is a view showing a manner of test in Fig.
2(a);
Fig. 3(a) is a graph showing a tensile strength of a soldering portion of the photovoltaic cell of the present invention;
Fig. 3(b) is a view showing a manner of test in Fig.
3(a); and
Fig. 4 is a partly cut off perspective view of a conventional photovoltaic cell.
DESCRIPTION OF THE PREFERRED EMBODIMENT
An embodiment of the present invention will be described with reference to Figs. 1 to 3.
An photovoltaic cell comprises a transparent substrate 11 made of, for example, a blue plate glass and the like, a transparent electrode 12 layered on a surface of the substrate 11 forming an irradiation side electrode of the photovoltaic cell, an output terminal 12a extended from the transparent electrode 12 for forming a positive output terminal of the photovoltaic cell, a transparent electrode 12b separated from the transparent electrode 12 for forming a negative electrode pad of the photovoltaic cell, an amorphous semiconductor layer composed of a Player, an i-layer, and an n-layer successively formed by chemical vapor deposition and layered in this order on the transparent electrode 12, a backside electrode 14 made of a metal film having a thickness of 2000 A formed by a metallizing nickel on the amorphous semiconductor film 13 and having an extended portion for covering a part or a whole of the transparent electrode pad 12b and forming a negative output terminal 14a of the photovoltaic cell, a protecting film 15 formed by applying a paint mainly made of an epoxy resin on the photovoltaic cell with use of a screen printing method excepting the negative output terminals 12a, 14a, and a thermosetting polymer conductive layer 16 formed by applying, for example, a polymer conductive adhesive on the output terminals 12a, 14a with use of a screen printing method and the like which is thereafter heated and hardened. The generating area comprising the amorphous semiconductor layer 13, the transparent electrode 12, and the backside electrode 14.
The transparent electrode 12 is made of, for example, indium tin oxide (ITO) or tin oxide (TO) and formed in predetermined pattern with use of resist printing or photolightgraphy method. The transparent electrode 12 becomes an electrode at the light incidence side of the photovoltaic cell, and the portion extended from the transparent electrode 12 becomes a positive output terminal 12a of the photovoltaic cell.
The transparent electrode 12 filmed and layered on the surface of the substrate 11 with use of an electronic beam evaporation method, sputtering method, spraying method and the like. The electronic beam evaporation method was employed according to the present invention and the thickness of the film of the transparent electrode 12
o thus obtained is 400 At and a sheat resistance is 100
To fabricate the P-layer of the amorphous semiconductor film 13 having a thickness of 100 A, monosilane (SiH4) was used as a host gas, diborane (B2H4) as a doping gas and hydrogen (H2) as a diluting gas. To fabricate the i-layer having a thickness of 5000 A, SiH4 was used as a host gas and hydrogen (H2) as a diluting gas. To fabricate n-layer having a thickness of 300 A, monosilane (SiH4) was used as a host gas, phosphine (PH3) as a doping gas and hydrogen (H2) as a diluting gas.
The gases used in the course of fabricating P, i, n layers are introduced into a vacuum tank by a mass flow controller and formed while they are excited under a high frequency of 13.5 (MHz) to generate glow discharge under the pressure of 133 (Pa). A substrate temperature is 300 (0C).
A backside electrode 14 made of a metal is formed on the amorphous semiconductor film 13.
A method of fabricating a thermosetting conductive layers 16 will be described more in detail with reference to an example of actual fabrication.
The polymer conductive adhesive comprises a copper particle having a size of 8 to 10 um coated by silver as a main component, and a pasty material kneading a phenol resin and a methyl carbytol. The resultant conductive adhesive is prepared to have a viscosity of 500 through 700 poise (20 OC) under the temperature of 20 0C and subjected to a screen printing on the surface of the output terminals 12a, 14a with use of a stainless screen having a size of 150 meshes. Thereafter, the resultant conductive adhesive was subjected to a levelling dry for 30 minutes and a curing dry for 30 minutes under the temperature of 150 OC. As a result, the thermosetting polymer conductive layers 16, 16 are formed on the upper surface of the output terminals 12a, 14a.
Whereupon, as an comparative example, substituted with the thermosetting polymer conductive layers 16, 16,
Ni layers 6, 6 having thickness of about 2000 A are metallized on the output terminals 2a, 4a with use of the electrobeam evaporation method to form an photovoltaic cell.
Wettability of the solder subjected to the output terminals 12a, 14a, 2a, 4a, and the tensile strength of the lead wires 18, 8 connected to the output terminals 12a, 14a, 2a, 4a, through the solders 17, 7 are tested between 20 pieces of the photovoltaic cells having the thermosetting polymer conductive layer 16, 16 and 20 pieces of the photovoltaic cells having Ni layers.
Variation of tested vlaues and average values are illustrated in Figs. 2(a) and 3(a) as initial value wherein solid lines show actual examples (polyer layer) and dotted lines show comparative examples (Ni layers).
Variation of tested values are respectively illustrated as vertical lines in initial value whereas the average values are illustrated as central dots in the vertical lines.
Thereafter, in the same way, test have been carried out under the temperature of 60 0C and humidity of 95 %RH for 500 hours.
Variation of tested value and average value are illustrated in Figs. 2(a) and 3(a) as values after 500 hours later or values after the humidity test was carried out.
Wettability of the solder is tested as shown in Fig.
2(b) in respect of the angles of contact of solders with the surfaces of the output terminals where soldering is subjected by the flux contained solder called as Silver s256 under the temperature of the soldering iron of 270 OC.
The tensile strength is tested as shown in Fig. 3(b) by measuring a strength of the solder to be peeled off from the surfaces where soldering is subjected to connect to the leads composed of seven twisted tin plated soft copper lead wires each thickness of 1# called as AWG30 in the manner that the lead wires are vertically pulled by a pushpull guage.
As evident from the test as shown in Figs. 2(a) and 3(a), wettability and tensile strength are less deteriorated than those of comparative example.
Especially, as to tensile strength of the actual example is less than that of the comparative example both at initial value and value after the humidity test was carried out.
Although the actual example mentioned above is one of the typical preferred ebmodiments, the present invention is not limited to the embodiment fabricated in the method described in detail herein or the one having a structure as illustrated herein. For example, the amorphous semiconductor layer 13 may be n-i-p junction type.
Although the light is irradiated from the substrate 11 but may be irradiated from the side of protecting film 15 which is called as a shield insulating substrate. The present invention is applicable to the shield insulating substrate on which the backside electrode, the amorphous semiconductor, the transparent electrode and the transparent protecting layer are successively layered.
The amorphou ssemiconductor may be the one having a particle in the part thereof or tandem structure. The electrode pad 12b may be omitted.
As mentioned above in detail above, according to the present invention the thermosetting polymer conductive layer 16 is formed by applying the polymer conductive adhesive on the output terminals 12a, 14a by a screen printing and hardening the applied polymer conductive adhesive. The lead wires 18 can be connected to the output terminals via the thermosetting polymer conductive layer 16 with use of the flux contained solder with high wettability and high tensile strength. The solder is not deteriorated under the condition of high termperature and high humidity for a long period of time. As a result, it is possible to provide an photovoltaic cell enabling to treat a surface of the output terminal with ease, and to be efficiently soldered on the output terminals, whereby the photovoltaic cell can be used for a long period of time under the condition of high temperature and high humidity.
Although the invention has been desribed in its preferred form with a cerrtain degree of particularity, it is to be understood that many variations and changes are possible in the invention without departing from the scope thereof.
Claims (8)
1. An photovoltaic cell comprising:
a substrate (11);
a transparent electrode (12) formed and layered on
the substrate (11),
an amorphous semiconductor layer (13) formed and
layered on the transparent electrode (12);
a backside electrode formed and layered on the
semiconductor layer (13) at the location opposite to the
transparent electrode (12) in the manner of sandwiching
the amorphous semiconductor layer (13);
a positive output terminal 12a extended from the
transparent electrode (12);
a negative output terminal 12b separated from the
tranaparent electrode (12);
the transparent electrode (12), the amorphous
semiconductor layer (13) and the backside electrode (14)
form a generator areas;
output terminals (12a, 14a) provided on the
transparent electrode (12) and the backside electrode (14)
for supplying an output from the photovoltaic cell;;
a protection film (15) for covering the transparent
electrode (12), the amorphous semiconductor layer (13) and
the backside electrode (14) except output terminals (12a,
14a); and
a thermosetting polymer conductive layer (16) formed
on each output terminal (12a, 14a) and having lead wires (18, 18) soldered threron by a solder.
2. An photovoltaic cell according to Claim 1, wherein the transparent electrode (12), the semiconductor layer (13), and the backside electrtode (14) are respectively formed in the plural number, whereby said generator are are formed in the plural numbers.
3. An photovoltaic cell according to Claim 1, wherein the thermosetting polymer conductive layer is fomred by layering a conductive adhesive made of mainly the thermosetting polymer conductive layer and conductor powder on the output terminals (12a, 14a) of the transparent electrode (12) and the backside electrode (14) in the manner of printing.
4. An photovoltaic cell according to Claim 1, wherein the amorphous semiconductor layer (13) composed of a Player, an i-layer, and an n-layer successively formed by chemical vapor deposition technique and layered in this order on the transparent electrode (12).
5. An photovoltaic cell according to Claim 1, wherein the backside electrode (14) made of a metal film having a
o thickness of 2000 A formed by metallizing nickel on the amorphous semiconductor film (13) and having an extended portion for covering a part or a whole of a transparent electrode pad (12b) and forming a negative output terminal (14a) of the photovoltaic cell.
6. An photovoltaic cell according to Claim 1, wherein the thermosetting polymer conductive layer (16) formed by applying a polymer conductive adhesive on the output terminals 12a, 14a with use of a screen printing method.
7. A photovoltaic cell, substantially as hereinbefore described with reference to Figures 1 to 3 of the accompanying drawings.
8. Any novel feature or combination of features described herein.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988011412U JPH01116465U (en) | 1988-01-30 | 1988-01-30 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8812887D0 GB8812887D0 (en) | 1988-07-06 |
GB2214711A true GB2214711A (en) | 1989-09-06 |
GB2214711B GB2214711B (en) | 1992-02-05 |
Family
ID=11777314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8812887A Expired - Fee Related GB2214711B (en) | 1988-01-30 | 1988-05-31 | Photovoltaic cell |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH01116465U (en) |
GB (1) | GB2214711B (en) |
HK (1) | HK90492A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2713018A1 (en) * | 1993-11-26 | 1995-06-02 | Siemens Solar Gmbh | Method for contacting thin-film solar cells |
GB2285171A (en) * | 1993-12-24 | 1995-06-28 | Nec Corp | Lead-on-chip semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59167072A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Series-connected type thin film solar battery |
JPS59167056A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Silicon semiconductor electrode |
-
1988
- 1988-01-30 JP JP1988011412U patent/JPH01116465U/ja active Pending
- 1988-05-31 GB GB8812887A patent/GB2214711B/en not_active Expired - Fee Related
-
1992
- 1992-11-19 HK HK904/92A patent/HK90492A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2713018A1 (en) * | 1993-11-26 | 1995-06-02 | Siemens Solar Gmbh | Method for contacting thin-film solar cells |
GB2285171A (en) * | 1993-12-24 | 1995-06-28 | Nec Corp | Lead-on-chip semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
GB2214711B (en) | 1992-02-05 |
GB8812887D0 (en) | 1988-07-06 |
JPH01116465U (en) | 1989-08-07 |
HK90492A (en) | 1992-11-27 |
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Legal Events
Date | Code | Title | Description |
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PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19950531 |