JPH01115168A - Manufacture of semiconductor light-receiving element - Google Patents
Manufacture of semiconductor light-receiving elementInfo
- Publication number
- JPH01115168A JPH01115168A JP62274046A JP27404687A JPH01115168A JP H01115168 A JPH01115168 A JP H01115168A JP 62274046 A JP62274046 A JP 62274046A JP 27404687 A JP27404687 A JP 27404687A JP H01115168 A JPH01115168 A JP H01115168A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- dopant
- ions
- contribute
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000002513 implantation Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052786 argon Inorganic materials 0.000 abstract description 4
- -1 argon ions Chemical class 0.000 abstract description 4
- 229910001423 beryllium ion Inorganic materials 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 5
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PWOSZCQLSAMRQW-UHFFFAOYSA-N beryllium(2+) Chemical compound [Be+2] PWOSZCQLSAMRQW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Element Separation (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は光通信や光情報処理等に於て用いられる半導体
受光素子を製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing a semiconductor light receiving element used in optical communication, optical information processing, etc.
（従来の技術）
化合物半導体受光素子は、光通信や光情報処理用の高感
度受光器として実用化が進められている。特にアバラン
シェフォトダイオード（以下ＡＰＤ）は、ブレイクダウ
ン電圧近傍に於て電子もしくは正孔の雪崩増倍による内
部電流利得を持つから、受光感度が高い点で優れている
。一方丈容量長距離光通信用の波長１−５５１ｔＩｎに
対する半導体受光素子の材料としてＩｎＧａＡｓが広く
用いられている。従来の方法により製造されたＩｎＧａ
Ａｓ系ＡＰＤの構造の一例を第２図に示す６本図のＡＰ
Ｄは、受光部８の周辺での局所的なブレイクダウンを防
ぎ受光面内の均一な増倍を実現するために、受光部の周
辺にガードリング６を持つ、またガードリング６の外周
辺でのブレイクダウンを防ぐために更に低濃度のガード
リング７をガードリング６の外周縁に形成し、ガードリ
ングの曲率の緩和を行っている０本図に示すような二重
ガードリング構造のＡＰＤが広く使われている。(Prior Art) Compound semiconductor photodetectors are being put into practical use as high-sensitivity photodetectors for optical communications and optical information processing. In particular, avalanche photodiodes (hereinafter referred to as APDs) have an internal current gain due to avalanche multiplication of electrons or holes in the vicinity of the breakdown voltage, and are therefore excellent in that they have high light-receiving sensitivity. On the other hand, InGaAs is widely used as a material for semiconductor light-receiving elements for wavelengths of 1-551tIn for high-capacity, long-distance optical communications. InGa manufactured by conventional methods
Figure 2 shows an example of the structure of an As-based APD.
D has a guard ring 6 around the light receiving part in order to prevent local breakdown around the light receiving part 8 and achieve uniform multiplication within the light receiving surface. In order to prevent breakdown, a guard ring 7 with a lower concentration is formed on the outer periphery of the guard ring 6, and the curvature of the guard ring is relaxed. It is used.
（発明が解決しようとする問題点）
上に記した従来例ではガードリングの形成を加速エネル
ギーを変えて２度のイオン注入により行っている。その
際には注入マスクを形成する必要があり、注入マスクの
目合わせは３−以下の高い精度が必要である。ところが
、３−以下の精度で注入マスクの目合わせをすることは
容易でなく、従来法で得られたＡＰＤでは目合わせずれ
による局所的なブレイクダウンが起こり易かった。(Problems to be Solved by the Invention) In the conventional example described above, the guard ring is formed by two ion implantations with different acceleration energies. In this case, it is necessary to form an implantation mask, and the alignment of the implantation mask requires a high accuracy of 3-3 or less. However, it is not easy to align the injection mask with an accuracy of 3 or less, and APDs obtained by conventional methods are prone to local breakdown due to misalignment.
本発明の目的は、この様な従来の欠点を除去し、受光面
内の均一な増倍を得るためのガードリングが簡単な工程
で形成できる半導体受光素子の製造方法を提供すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor light-receiving element, which eliminates such conventional drawbacks and can form a guard ring in a simple process to obtain uniform multiplication within the light-receiving surface.
（問題点を解決するための手段）
前述の問題点を解決するために本発明が提供する手段は
、ガードリングを有する半導体受光素子の製造方法であ
って、ドーパントとして寄与しない不純物のイオンを注
入した後に、ドーパントとなる不純物のイオンを前記ド
ーパントとして寄与しない不純物よりも深い位置に注入
し、次にアニール処理を行ってガードリングを形成する
ことを特徴とする。(Means for Solving the Problems) Means provided by the present invention to solve the above-mentioned problems is a method for manufacturing a semiconductor light-receiving element having a guard ring, in which ions of impurities that do not contribute as dopants are implanted. After that, ions of an impurity serving as a dopant are implanted to a deeper position than the impurity that does not contribute as a dopant, and then an annealing treatment is performed to form a guard ring.
（作用）
本発明により、ドーパントとして寄与しない不純物のイ
オン注入によって結晶性を破壊された表面付近ではドー
パントとして注入した不純物の拡散速度が早いから大き
く広がり、結晶性の保たれた部分では拡散速度が遅いか
ら広がりが少ない。(Function) According to the present invention, near the surface where the crystallinity has been destroyed by the ion implantation of impurities that do not contribute as a dopant, the diffusion rate of the impurity implanted as a dopant is fast, so it spreads greatly, and in the area where the crystallinity is maintained, the diffusion rate is reduced. It's slow so there's not much spread.
そこで、本発明の方法によれば、−回のマスク形成によ
り曲率の緩和されたＧＲが得られる他、注入マスク工程
の回数を減少させることができ、目合わせずれによる局
所的なブレイクダウンを防ぐことができる。Therefore, according to the method of the present invention, in addition to obtaining a GR with a relaxed curvature by forming the mask twice, it is also possible to reduce the number of implantation mask steps, and prevent local breakdown due to misalignment. be able to.
（実施例）
以下、本発明の実施例について図面を参照して説明する
。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の製造方法を示し、本図の（
ａ）〜（ｅ）はその方法のうちのガードリング形成工程
で形成される構造の断面図である。この実施例の方法で
は、まず第１図（ａ）に示すように、ｎ−−ＩｎＰ層１
のうちの受光部を除く部分に７０ＫＶ／ｃＴｒｌのエネ
ルギーでアルゴンイオン３の注入を行い表面の結晶性を
破壊する０次に第１図（ｂ）に示すようにｎ”−ＩｎＰ
層１主１上ＶＤ法により５１０ｔイオン注入マスク４を
５０００人程度形成したのち、フォトレジスト２を塗布
する。そして、ガードリングパターンの露光および現象
を行い、きらにＳｉか膜４を除き第１図（ｃ）に示すイ
オン注入マスクを形成する。第１Ｕ５Ａ（ｄ）に示すよ
うにｌｌ０ＫＶ／ｃｍのエネルギーでのＢｅ＋のイオン
５の注入により、ガードリング用のイオンを注入する。FIG. 1 shows a manufacturing method according to an embodiment of the present invention.
a) to (e) are cross-sectional views of structures formed in the guard ring forming step of the method. In the method of this embodiment, first, as shown in FIG. 1(a), an n--InP layer 1
Next, as shown in Figure 1(b), argon ions are implanted at an energy of 70 KV/cTrl to destroy the crystallinity of the surface of the n''-InP.
After approximately 5,000 510t ion implantation masks 4 are formed on the main layer 1 by the VD method, a photoresist 2 is applied. Then, a guard ring pattern is exposed and developed, and the ion implantation mask shown in FIG. 1(c) is formed except for the Si film 4. As shown in the first U5A(d), ions for the guard ring are implanted by implanting Be+ ions 5 at an energy of 10 KV/cm.
最後に第７００℃で２０ｍ１ｎアニールを行う、このア
ニールにおいて、アルゴンイオンによって結晶性を破壊
された表面付近ではＢｅ”５が速い速度で拡散し、結晶
性の保たれた部分では拡散速度が遅くほとんど拡散しな
い、そこで、アニール処理により、第１図（ｅ）に示す
ような曲率の緩和されたＧＲガードリング６が形成され
る。またアルゴンイオンによって破壊された表面付近の
結晶はアニールによって再び結晶性が回復するから素子
特性に影響はない。Finally, 20ml annealing is performed at 700°C. In this annealing, Be"5 diffuses at a high rate near the surface where the crystallinity has been destroyed by argon ions, and the diffusion rate is slow in the areas where the crystallinity is maintained. Therefore, by annealing, a GR guard ring 6 with a relaxed curvature as shown in FIG. is recovered, so there is no effect on the device characteristics.
（発明の効果）
以上に説明したように、本発明の製造方法によれば、一
つの注入マスクにより曲率の緩和されたガードリングを
形成でき、注入マスクの目合わせずれによる局所的なブ
レークダウンの起こることのない半導体受光素子を製造
できる。(Effects of the Invention) As explained above, according to the manufacturing method of the present invention, a guard ring with a relaxed curvature can be formed using one implantation mask, and local breakdown due to misalignment of the implantation mask can be formed. It is possible to manufacture a semiconductor light-receiving element in which this phenomenon does not occur.
第１図は本発明の一実施例である半導体受光素子製造方
法のうちのＧＲ形成工程を示す図、第２図は従来の方法
で製造されたＡＰＤを示す断面図である。
１・＝ｎ−−ＩｎＰ層、２・・・フォトレジスト、３・
・・アルゴンイオン、４・・・Ｓｉｎ、膜、５・・・ベ
リリウムイオン（Ｂｅ“）、６・・・ガードリング、７
・・・ガードリング、８・・・受光部、９・・・ｐ側電
極、１０・・・絶縁膜、１１＝ ｎ −ＩｎＰ層、１２
− ｎ −ＩｎＧａＡｓＰ１！、１３・・・ｎ −Ｉｎ
ＧａＡｓ層、１４＝ ｎ −ＩｎＰバッファ層、１５＝
ｎ −ＩｎＰ基盤、１６・−ｎ側電極。FIG. 1 is a diagram showing a GR forming step in a method for manufacturing a semiconductor light-receiving device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing an APD manufactured by a conventional method. 1.=n--InP layer, 2... photoresist, 3.
...Argon ion, 4...Sin, membrane, 5...Beryllium ion (Be"), 6...Guard ring, 7
... Guard ring, 8... Light receiving part, 9... P side electrode, 10... Insulating film, 11 = n-InP layer, 12
-n-InGaAsP1! , 13...n-In
GaAs layer, 14= n-InP buffer layer, 15=
n -InP base, 16·-n side electrode.
Claims (1)
て、ドーパントとして寄与しない不純物のイオンを注入
した後に、ドーパントとなる不純物のイオンを前記ドー
パントとして寄与しない不純物よりも深い位置に注入し
、次にアニール処理を行ってガードリングを形成するこ
とを特徴とする半導体受光素子製造方法。In a method for manufacturing a semiconductor light receiving element having a guard ring, after implanting impurity ions that do not contribute as a dopant, implanting impurity ions that will become a dopant to a deeper position than the impurity that does not contribute as a dopant, and then annealing. A method for manufacturing a semiconductor light-receiving element, the method comprising forming a guard ring through processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62274046A JPH01115168A (en) | 1987-10-28 | 1987-10-28 | Manufacture of semiconductor light-receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62274046A JPH01115168A (en) | 1987-10-28 | 1987-10-28 | Manufacture of semiconductor light-receiving element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01115168A true JPH01115168A (en) | 1989-05-08 |
Family
ID=17536215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62274046A Pending JPH01115168A (en) | 1987-10-28 | 1987-10-28 | Manufacture of semiconductor light-receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01115168A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3206234A1 (en) * | 2016-02-09 | 2017-08-16 | ams AG | Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element |
-
1987
- 1987-10-28 JP JP62274046A patent/JPH01115168A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3206234A1 (en) * | 2016-02-09 | 2017-08-16 | ams AG | Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element |
| US9935231B2 (en) | 2016-02-09 | 2018-04-03 | Ams Ag | Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element |
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