JPH01109753A - Semiconductor device - Google Patents

Abstract

PURPOSE:To implement high heat conductivity and low stress, by using a resin composition, which includes multifunctional epoxy resin, hardening agent, spherical alumina powder and spherical silica powder having specified average grain diameters respectively, and covering and/or sealing a part of a semiconductor element for molding. CONSTITUTION:A resin composition 3 includes multifunctional epoxy resin compound, hardening agent, spherical alumina powder having average grain diameter 0.5mum or larger and 5mum or smaller and spherical silica powder, whose average grain diameter is 44mum or smaller. At least a part of a semiconductor element 2 is covered and/or sealed by using said resin composition 3 and molded. At this time, the mixing ratio of the alumina powder and the silica powder in weight ratio is as follows: alumina powder/silica powder is 10/1-1/10. The sum of both powder is 70-90wt.% of the entire resin composition. The heat conductivity of the covering material and the sealed molded product is made to be 7.0X10<-3>-8.0X10<-2>cal/cm/sec/deg. Thus, high heat conductivity, low thermal expansion and low thermal stress can be implemented.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a semiconductor device in which at least a portion of an element is coated and/or encapsulated with an epoxy resin composition. The present invention relates to a semiconductor device that contains spherical alumina powder with a particle size of 1 μm to achieve high thermal conductivity and low stress.

[Conventional technology]

The majority of LSI encapsulation methods include resin encapsulation. The mainstream of this resin composition is a system in which a phenol novolac resin is used as a hardening agent in a novolac type epoxy resin, and fused silica powder is used as a filler.

Incidentally, the progress in increasing the degree of integration and actual high-density packaging of LSIs is remarkable, and there is an increasing demand for resin compositions with excellent reliability that can cope with this trend.

That is, there is a need for a resin composition that has excellent properties in terms of heat resistance and moisture resistance. These properties are largely dependent on the thermophysical properties of the cured resin material, such as thermal conductivity (heat dissipation), thermal expansion, and thermal stress.

As described above, conventional resin compositions use fused silica powder as a filler, and are not necessarily suitable for achieving high thermal conductivity. It is possible to improve the thermal conductivity of the cured product by using zirconium or alumina instead of fused silica, but from the viewpoint of mechanical strength such as crack resistance, alumina or zirconium is suitable. (Unexamined Japanese Patent Publication No. 171725/1983). In addition, if the blending ratio of fused silica powder in the above composition is increased, it can be improved to some extent, but there are problems such as a drastic decrease in moldability and bending of wire bonding, and this is also not a sufficient countermeasure. is not.

To this end, countermeasures have been taken, such as patents limiting the particle size distribution of fused silica powder and limiting the mixing ratio of fused silica powder and crystalline silica powder. However, this filler system naturally has a limit to improving thermal conductivity (the value of crystalline silica).
(Japanese Unexamined Patent Publication No. 61-203121).

[Problem that the invention seeks to solve]

The reason for the delay in solving the problem is that the above-mentioned conventional technology does not focus on alumina as a filler. Conventional alumina fillers are extremely fine particles with a particle size of 0.5 μm or less, or when the particle size is large,
Because its shape is not spherical, it is known to be effective in increasing thermal conductivity, but it has drawbacks such as cracks when used as a resin molded product for LSI encapsulation and large damage to the element surface. Because of this, it was rarely used.

An object of the present invention is to coat or/and coat at least a portion of an LSI element with an epoxy resin composition highly filled with an alumina filler having an average particle size of 0.5 μm or more and 5 μm or less and a spherical shape. And by sealing and molding, the object is to provide a highly reliable resin-sealed semiconductor device that achieves high thermal conductivity, low coefficient of thermal expansion, and low thermal stress.

[Means for solving problems]

The above objects of the present invention are achieved by the following matters. What is the gist?

(1) Polyfunctional epoxy compound and curing agent, average particle size is 5
1. A semiconductor device, characterized in that a part of a semiconductor element is coated and/or encapsulated using a resin composition containing spherical alumina powder of micrometers or less.

(2) The content of spherical alumina powder with an average particle size of 0.5 μm or more and 5 μm or less is based on the entire resin composition.
(1) characterized by being 80% by weight or more;
The semiconductor device described.

(3) Spherical alumina powder with an average particle diameter of 0.5 μm or more and 5 μm or less is treated with a surface treatment agent or/and an organic compound in advance,
The semiconductor device according to (1), wherein the semiconductor device is coated.

(4) The semiconductor device according to (1), wherein the curing agent contains at least a novolac type phenolic resin.

(5) The semiconductor device according to (1), wherein the curing agent contains at least an N,N'-substituted bismaleimide compound.

(6) a polyfunctional epoxy compound, a curing agent, and a spherical alumina powder with an average particle size of 0.5 μm or more and 5 μm or less,
Using a resin composition containing at least spherical silica powder having an average particle size of 44 μm or less.

A semiconductor device characterized in that at least a portion of a semiconductor element is coated and/or encapsulated.

(7) The mixing ratio of spherical alumina powder with an average particle size of 0.5 μm or more and 5 μm or less and spherical silica powder with an average particle size of 44 μm or less is the former/latter 10/1 to 1 by weight.
/1o, and the sum of both is.

(6) The semiconductor device according to (6), wherein the amount is 70 to 90% by weight based on the entire resin composition.

(8) The thermal conductivity of the coating material and the sealing molded product is 7.0
X 10-'~8. OX 10-2caQ/cm/s
(1) or (6) characterized by being ee/deg
).

(9) A polyfunctional epoxy compound, a curing agent, and a spherical alumina powder whose filler has an average particle size of at least 5 μm or less,
By using a mixture of an epoxysilane compound and an acylate type titanate compound as a coupling agent in at least the resin composition, at least a part of the semiconductor element can be coated and/or encapsulated. Characteristic semiconductor devices.

(10) The mixing ratio of the epoxysilane compound and the acylate type titanate compound is the former/latter (weight ratio) of 5
71 to 115, the semiconductor device according to (9).

[Effect]

In the present invention, the polyfunctional epoxy compound is, for example,
diglycidyl ether of bisphenol A, butadiene jepoxide, 3,4-epoxycyclohexylmethyl-(3,4-epoxy)cyclohexanecarboxylate, vinylcyclohexane dioxide, 4,4'-di(1,2-epoxy ethyl) diphenyl ether, 4.
4'-(1,2-epoxyethyl)biphenyl, 2,
2-bis(3,4-epoxycyclohexyl)propane, glycidyl ether of resorcinol, diglycidyl ether of phloroglucin, diglycidyl ether of methylphloroglucin, bis-(2°3-epoxycyclopentyl) ether, 2-(3, 4-epoxy)cyclohexane-5,5-spiro(3,4-epoxy)-cyclohexane-m-dioxane, bis-(3,4-epoxy-
6-methylcyclohexyl)adipate, N, N'-m
- Trifunctional epoxy compounds such as phenyllene bis(4,5-epoxy-1°2-cyclohexane)dicarboximide, triglycidyl ether of para-aminophenol, polyallyl glycidyl ether, 1,3.5-tri(1, 2-epoxyethyl)benzene, 2.2',
4. Epoxy compounds having trifunctionality or higher are used, such as 4'-tetraglycidoxybenzophenone, tetraglycidoxytetraphenylethane, polyglycidyl ether of phenol formaldehyde novolac, triglycidyl ether of glycerin, and triglycidyl ether of trimethylolpropane. .

In addition, - as an epoxy compound having at least one terminal vinyl group or terminal allyl group and at least one terminal epoxy group (ethylene oxide group) in the molecule, for example, the general formula (wherein Rz * R2 is H or C
A typical example is (methyl)glycidyl (meth)acrylic ether.

Also, the general formula (In the formula, R8 and R4 represent H or CHa.

R12 is -C-0-CHt- or -CHzOCHz+, -CHIZ-o-c-c) (=■) an ethylenically unsaturated epoxy monomer having 6 to 12 carbon atoms, or an olefinically unsaturated monoepoxy There are sides etc.

In addition, the general formula % formula % (in the formula, R5 is 1■, or a lower alkyl group having 1 to 4 carbon atoms, or CH2C(l), and X is 1 to
and y is an integer of 0 to 10), for example, allyl glycidyl ether.

(2-allyloxy)ethylene glycidyl ether, 4
-Butenyl glycidyl ether, etc.6Also, there are compounds represented by the general formula (in the formula, one of R8-R11 represents a hydrogen atom, methyl or allyl group, and the other R represents a hydrogen atom). .

[Effect]

Further, in the general formula (1), Xi and X2 are either -0- or -C-O-, and may be the same or different from each other.

Moreover, Yl and Y2 are -CH=N-, -CH=CH-, -
N=N-, and they may be the same or different. ). - epoxy compound,
For example:

曾COCH2CfHz υ HzG, -, IIc-Hxc-OuCH=HCOCI=
CI-Hz()c-n2cmo-+! ! Gcu=coO
CII=CI+-〇1/C>0-CHz-CzuHz →>C-0-CH2-CmaH2 H27C-H2C-0ON=llCON=N combination〇-C
Contains 1h-C maH2/ The resin composition of the present invention can also be used in combination of one or more types depending on the purpose and use.

Among the above compounds, in particular: This is effective in achieving the effects of the present invention.

Further, in the present invention, general formula (II)-GHz-C
I −CHz \/[■] [In the formula, xi and Xz are the same as above. ] Examples of epoxy compounds include the following.

One or more of these can be used in combination.

In addition, in the present invention, as a curing agent, the general formula [wherein, Y
t, Yz are -←CH2+ (m is 1 to 12) -S-, SOx.

CH3Fa Yes. ), may be the same or different from each other. Also, Z
s, Zz are -N Hz, -N H-CE N .

-OH, -0-CEN, -COOH, -CEN.

-C=\ It is a group containing a double bond. ), and may be the same or different. The Schiff compound represented by ] is effective in improving the reliability of the semiconductor device of the present invention. for example.

Cl1a CIla Ha Hs Ha Fa Fa Ha Ha Ha C! 13 CHs Ha Ha υ −0−=N(Σ00−), etc. One or more of these compounds can be used in combination depending on the purpose and use.

Moreover, among the above-mentioned compounds, or is particularly effective in exhibiting the effects of the present invention. In addition, as a curing agent for enhancing the photocurability of the composition of the present invention,
The combined use of bis[2-(aminobenzoyl)ethynyl]benzene compounds is extremely effective. For example, there are. There are also, for example, those derived from the above compounds. Also effective are 4,4'-diaminocinnamanilide compounds and derivatives of these compounds.

For example, there are. One or more of the above compounds can also be used in combination. In addition, in order to enhance the photocurability of the composition of the present invention and to improve the adhesion of the cured product to inorganic substances and metals,
CHs in 12 CFa may be the same or different from each other, and Z
t, Zz are -MHz, -NH-CEN.

-OH, -0-CEN, -COOH, -CEN.

0, a group containing an unsaturated double bond. ), and may be the same or different. The combined use of dihydroxy Schiff compounds represented by ] is highly effective. Examples of such compounds include CHsIlaCHa-CHBesaNh. One or more of these may be used in combination depending on the purpose and use.

Also.

General formula [■] [In the formula, Yt, Yz, Zl, and Zl2 are the same as above. ] Dihydroxy Schiff compound 1 represented by
For example, etc. are also valid.

Further, the following compounds can also be used as curing agents.

for example, etc. are also useful.

Also, 4,4'-diaminostilbene, 3,4'-diaminostilbene, 3,3'-diaminostilbene, 4.
4'-diaminotoran, 3.4'-diaminotoran,
3,3'-diaminotra2.4゜4'-diaminodiphenyl Schiff, 3,4'-diaminodiphenyl Schiff, 3
, 3'-diaminodiphenylazo, 4,4'-diaminodiphenylazo, 3,4'-diaminophenyl azo,
3゜3'-diaminodiphenylazo diamine compounds and derivatives from these compounds 1 For example, 4゜Bis-unsaturated imide compounds such as 4'-bismaleimidostilbene, 4,4'-bismaleimidotran, 4,4 Dicyanamide compounds such as '-dicyanamide stilbene and 4°4'-dicyanamide totran can also be used as curing agents.

Further, when an N,N'-substituted bismaleimide compound is used as a curing agent, it is effective in improving the heat resistance of the cured product, and the reliability of the semiconductor device can be improved.

For example, a compound represented by formula 1 (VII [wherein Rlz represents an allenkyl group, an arylene group, or a divalent organic group substituted thereof], such as N,N'-ethylene bismaleimide, N,N ' -hexamethylene bismaleimide, N, N
' -dodecamethylene bismaleimide, N, N'-m-
Phenylene bismaleimide, N,N'-4,4'-diphenyl ether bismaleimide, N,N'-4,4'
-diphenylmethane bismaleimide, N, N-4,4
' -dicyclohexylmethane bismaleimide, N, N
'-4,4'-metaxylene bismaleimide, N.

N'-4,4'-diphenylcyclohexane bismaleimide also has the general formula [■] [■] (wherein R13 to Rte represent hydrogen, a lower alkyl group, a lower alkoxy group, chlorine or bromine, and are the same as each other) R17 and Rla are hydrogen,
Methyl, ethyl, trifluoromethyl or trichloromethyl, Dl, Dx represent divalent organic groups having 2 to 24 carbon atoms. Etherimide compounds 1 represented by , 2,2-bis[3-chloro-4-(4
-maleimidophenoxy)phenyl]propane, 2,2
-bis[3-bromo4-(4-maleimidophenoxy)phenyl]propane, 2゜2-bis[3-ethyl-4
-(maleimidophenoxy)phenyl]propane, 2,
2-bis[3-propyl-4-(4-maleimidophenoxy)phenyl]propane, 2,2-bis[3-isopropyl-4-(4-maleimidophenoxy)propane,
2,2-bis[3-n-butyl-4-(4-maleimidophenoxy)phenyl]propane, 2゜2-bis[3-
sec-butyl-4-(4-maleimidophenoxy)phenyl]propane, 2,2-bis[3-methoxy-4-
(4-maleimidophenoxy)phenyl]propane, 1
, 1-bis[4-(4-maleimidophenoxy)phenyl]ethane, 1,1-bis[3-methyl-4-(4-maleimidophenoxy)phenyl]ethane, 1,1-bis[3-chloro-4 -(4-maleimidophenoxy)phenyl]ethane, 1,1-bis[3-bromo-4-(4-
maleimidophenoxy)phenyl]ethane, bis(4-
(4-Maleimidophenoxy)phenylcomethane, bis[3-methyl-4-(4-maleimidophenoxy)phenylcomethane, bis[3-chloro-4-(4-maleimidophenoxy)phenylcomethane, bis( 3-bromo-
4-(4-maleimidophenoxy)phenylcomethane,
1,1,1,3,3,3-hexafluoro-2,2-bis(4-(4-maleimidophenoxy)phenyl)propane, 1,1,1,3,3゜3-hexachloro-2, 2
-bis[4-(4-maleimidophenoxy(phenyl))
Propane, 3゜3-bis(4-(4-maleimidophenoxy)phenyl)pentane, 1,1-bis(4-(4-
maleimidophenoxy)phenyl]propane, 1°-'
1,1,3,3.3-hexafluoro-2,2-bis[
3,5-dibromo-4(4-maleimidophenoxy)phenyl]propane, 1,1,1,3゜3.3-hexafluoro-2,2-bis[3-methyl-4(4-maleimidophenoxy)phenyl ] Propane, 2,4-bis(4
-(4-maleimidophenoxy)phenyl-2-methylpentane, 1-(4-(3-maleimidophenoxy)phenyl)-1,3,3-trimethyl-6-(3-maleimidophenoxy(iredan), etc. It is also possible to use a mixture of two or more of these.Furthermore, a mixture with mono-substituted maleimide, tri-substituted maleimide, and tetra-substituted maleimide can also be used as appropriate.

In the present invention, general formula (VII and/or general formula [■
] When using an N,N'-substituted bismaleimide compound represented by
It becomes a heat-resistant material with excellent flexibility. For example, 0-
Phenylenediamine, m-phenylenediamine, p-phenylenediamine, benzidine, 3,3'-dimethyl-
4,4'-diaminobiphenyl, 3,3'-dichlorobenzidine, 3,3'-dimethoxybenzidine, 4°4'
-diaminodiphenylmethane, 1,1-bis(4-aminophenol)ene, 2,2-bis(4-aminophenyl)propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2.2- Bis(4-aminophenyl)-1,3-dichloro-1,1,3,3-tetrafluoropropane, 4,4'-diaminodiphenyl ether.

4.4'-diaminodiphenyl sulfide, 3°3'
-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfoxide, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 3,3'-diaminodibenzophenone, 4,41-
Diaminobenzophenone, 3,4'-diaminobenzophenone, N.

N-bis(4-aminophenyl)methylamine.

N,N-bis(4-aminophenyl)-n-butylamine, N,N-bis(4-aminophenyl)amine, m-
Aminobenzoyl-P-aminoanilide, 4-aminophenyl-3-aminobenzoate 4,4'-diaminoazobenzene, 3,3'-diaminoazobenzene, bis(
3-aminophenyl)diethylsilane, bis(4-aminophenyl)phenylphosphine oxyto, bis(4-
aminophenyl)ethylphosphine oxyto, 1°5-
Diaminonaphthalene, 2,6-diamitupyridine, 2,
5-diamino-1,1,4-oxadiazole, m-xylylenediamine, p-xylylenediamine, 2+4(p
-β-amino-t-butylphenyl) ether, p-bis-2-(2-methyl-4-aminopentyl)benzene, p-bis(1,1-dimethyl-5-aminopentyl)
Benzene, hexamethylene diamine, heptamethylene diamine, octamethylene diamine, nonamethylene diamine, decamethylene diamine, 2.11-diaminododecane, 1,12-diaminooctadecane, 2,2-dimethylpropylene diamine, 2° to 5-dimethylene xamethylenediamine, 3-methylhebutamethylenediamine, 2
, 5-dimethylheptamethylenediamine, 4,4-dimethylheppolymethylenediamine, 5-methynonamethylenediamine, 1,4-diaminocyclohexane, bis(p-
aminocyclohexyl)methane, 3-methoxyhexamethylenediamine, 1,2-bis(3-aminopropoxy)ethane, bis(3-aminopropyl)sulfide,
Examples include N,N-bis(3-aminopropyl)methylamine.

Also, 2,4-diaminodiphenylamine, 2゜4-diamino-5-methyldiphenylamine, 2゜4-diamino-4'-methyldiphenylamine.

1-anilino-2,4-diaminonaphthalene, 3°3'
-Diamino-4-anilinobenzophenone and other N-aryl substituted aromatic triamines.

Furthermore, polyamines represented by the general formula (wherein, X is an alkylidene group containing a methylene group, and m is a number on average of 0.1 or more) are also useful. Particularly effective in imparting flexibility are the general formulas [■] [■] (where Rra to Rze represent hydrogen, a lower alkyl group, a lower alkoxy group, chlorine or bromine, and are the same as each other). may be different, R17 and R1δ are hydrogen,
A methyl group, an ethyl group, a trifluoromethyl group, or a trichloromethyl group, which may be the same or different. ), for example, 2,2'-bis(4-(4-
aminophenoxy)phenyl]propane, 2,2'-bis[3-methyl-4-(4-aminophenoxy)phenyl]furopane, 2,2'-bis[3-chloro-4-(4
-aminophenoxy)phenyl]propane, 2,2'-
Bis[3-bromo-4-(4-aminophenoxy)phenyl]propane, 2゜2'-bis[3-ethyl-4-(
4-aminophenoxy)phenyl]propane, 2,2'
-bis[3-propyl-4-(4-aminophenoxy)
phenyl]propane, 2,2'-bis[3-isopropyl-4-(4-aminophenoxy)phenyl]propane, 2,2-bis(3-n-butyl-4-(4-aminophenoxy)phenyl)propane , 2.2'-bis(3-
see-butyl-4-(4-aminophenoxy)phenyl]propane, 2,2'-bis[3-methoxy-4-(
4-aminophenoxy)phenyl]propane, 1,1-
Bis(4-(4-aminophenoxy)phenyl)ethane, 1,1-bis[3-methyl-4-(4-aminophenoxy)phenyl]ethane, 1,1-bis[3-chloro-
4-(4-aminophenoxy)(phenyl)ethane, 1
, 1'-bis[3-bromo-4-(4-aminophenoxy)phenyl]ethane, bis(4-(4-aminophenoxy)phenylcomethane, bis[3-methyl-4-(4
-aminophenoxy)phenylcomethane, bis[3-chloro-4-(4-aminophenoxy)phenylcomethane, bis[3-bromo-4-(4-aminophenoxy)phenylcomethane, 1,1,1, 3゜3.3-hexafluoro-2,2-bis[4-(4-aminophenoxy)phenyl]propane.

1.1,1,3,3,3-hexachloro-2,2-bis-(4-(4-aminophenoxy)phenyl)propane, 3,3-bis(4-(4-aminophenoxy(phenyl) Pentane, 1,1-bis(4-(4-aminophenoxy)phenyl)propane, 1,1,1,3,3,3-
Hexafluoro-2,2-bis[3,5-dimethyl-4
-(4-aminophenoxy)phenyl]propane, 1,
1゜1.3,3,3-hexafluoro-2,2-bis[
3,5-dibromo-4(4-aminophenoxy)phenyl]propane, 1,1,3,3,3-hexafluoro-2,2-bis[3-methyl-4-(4-aminophenoxy) phenyl]propane, etc. Moreover, [wherein m is 1 to 100]. ] There are compounds such as

In the present invention, as polyfunctional isocyanate compounds, methane diisocyanate, butane-1,1-diisocyanate, ethane-1,2-diisocyanate, butane-1
, 2-diisocyanate, transvinylene diisocyanate, propane-1,3-diisocyanate, butane-11,4-diisocyanate, 2-butene-1,4-diisocyanate, 2-methylbutane-1,4-diisocyanate, pentane-1,5- Diisocyanate, 2.
2-dimethylpentane-1,5-diisocyanate, hexane-1,6-diisocyanate.

heptane-1,7-diisocyanate, octane-1,
8-diisocyanate, inane-1,9-diisocyanate, decane-1,10-diisocyanate dimethylsilane diisocyanate, diphenylsilane diisocyanate, ω,ω'-1°3-dimethylbenzene diisocyanate, ω,ω'-1,4-dimethylbenzene Diisocyanate, ω, ω'-1,3-dimethylcyclohexane diisocyanate, ω, ω'-1,4-dimethylcyclohexane diisocyanate, ω, ω'-1,4-dimethylbenzene diisocyanate, ω, ω'-1,4- Dimethylnaphthalene diisocyanate, ω, ω'-1.5
-dimethylnaphthalene diisocyanate, cyclohexane-1,3-diisocyanate, cyclohexane-1,
4-diisocyanate, dicyclohexylmethane-4,
4'-diisocyanate, 1,3-phenylene diisocyanate, 1,4-phenylene diisocyanate, 1-
Methylbenzene-2,4-diisocyanate, 1-methylbenzene-2,5-diisocyanate, 1-methylbenzene-2,6-diisocyanate.

1-methylbenzene-3,5-diisocyanate, diphenyl ether-4,4'-diisocyanate, diphenyl ether-2,4'-diisocyanate, naphthalene-1,4-diisocyanate.

naphthalene-1,5-diisocyanate, biphenyl-
4,4'-diisocyanate-1-13,3'-dimethylbiphenyl-4,4'-diisocyanate, 2,3'-
dimethoxybiphenyl-4,4'-diisocyanate,
diphenylmethane-4,4'-diisocyanate, 3,
3'-dimethoxydiphenylmethane-4,4'-diisocyanate, 4゜4'-dimethoxydiphenylmethane-
Trifunctional isocyanate compounds such as 3,3'-diisocyanate, diphenylsulfide-4°4'-diisocyanate, diphenylsulfone-4,4'-diisocyanate, isocyanate from polymethylene polyphenylisocyanate, triphenylenemethane, tris(4-phenyl Isocyanate thiophosphate) 3
, 3', 4,4'-diphenylmethanetetrisocyanate and other trifunctional or higher functional isocyanate compounds are used.

In order to maintain the storage stability of the resin composition of the present invention containing a polyfunctional epoxy compound and a polyfunctional isocyanate compound, it is preferable to use a diisocyanate compound having a uretdione ring in the molecule.

A diisocyanate compound having a uretdione ring in its molecule has at least one uretdione ring in one molecule.

co c.

Here, R19, Rxo, and Rzz represent an aromatic group, and may be different from each other or may be partially or entirely the same, and X represents an -NGO group. Such compounds include
For example, 1,3-bis(3-isocyane'-to-o-tolyl)-2,4-uretidinedione, 1,3-bis(
3-Isocyanato-p-tolyl)-2,4-uretidinedione, 1,3-bis(3-isocyanato-4-methoxyphenyl)-2,4-uretidinedione, 1,3
-bis(4-(4-isocyanatophenylmethyl)phenyl 32.4-uretidinedione) and uretdione compounds synthesized from 2,4-tolylene diisocyanate and diphenylmethane-4,4-diisocyanate, etc. These compounds can be used alone or in combination.Compounds with uretdione rings can be converted into Coc by heating.

OCN R2o NCo-OCN -R19N
Like Co, it decomposes to produce isocyanate groups depending on the number of uretdione rings. Such a uretdione ring cleavage reaction proceeds, for example, at about 140 to 150°C in the case of tolylene diisocyanate dimer. Since the characteristics of the coating film of the present invention are significantly influenced by the amount of the compound having a uretdione ring added to the polyfunctional epoxy compound, selection of the amount added is extremely important. In the present invention, the uretdione ring of the compound having a uretdione ring is cleaved to 1 equivalent of the epoxy group of the polyfunctional epoxy compound, so that the equivalent ratio of the total isocyanate groups including the isocyanate groups is 1.0 to 4.0. It is characterized by blending within the range. This is because if the equivalence ratio is less than 1.0, the heat sensitivity of the coating film will be reduced, and if it is greater than 4.0, the flow characteristics of the powder will be reduced, and the aesthetic appearance of the coating film will be significantly impaired.

When thermally curing a coating film, it is important to select a catalyst that promotes the cleavage of the uretdione ring and also promotes the curing reaction between epoxy groups and isocyanate groups, or between isocyanate groups in order to achieve curing in a short time. It is. Ordinary amines and imidazoles promote the cleavage and curing reaction of the uretdione ring at relatively low temperatures, and as a result, the above-mentioned reaction with moisture tends to occur, making it difficult to obtain powder storage stability.

A conventionally known curing agent can also be used in combination with the epoxy resin composition of the present invention. They are written by Hiroshi Kakiuchi: Eboxy Resin (published September 1970), pages 109-149, Le
e, by Neville: Epoxy Resins (
McGraw-t(ill Book Company
Inc.: New York.

(published in 1957), pages 63-141, P, E.

Written by Brunis: Epoxy Re5ins Tec
hnology(Interscience Publ.
ishers, New 'Vork, published in 1963), pages 45 to 111, such as aliphatic polyamines, aromatic polyamines, amines including secondary and tertiary amines, carboxylic acids, carboxylic acid anhydrides. aliphatic and aromatic polyamide oligomers and polymers, boron trifluoride-amine complexes, synthetic resin initial condensates such as phenolic resin, melamine resin, urea resin, urethane resin, etc., dicyandiamide, carboxylic acid hydrazide, Examples include polyaminomaleimides.

One or more types of the above-mentioned curing agents can be used depending on the use and purpose.

A catalyst that promotes the curing reaction can be used in the resin composition of the present invention.

Such catalysts include, for example, tertiary amines such as triethanolamine, tetramethylbutanediamine, tetramethylbutanediamine, tetramethylhexanediamine, triethylenediamine, dimethylaniline, oxyalkyl amines such as dimethylaminoethanol, dimethylaminopetanol, etc. There are amines such as amine, tris(dimethylaminomethyl)phenol, N-methylmorpholine, and N-ethylmorpholine.

In addition, cetyltrimethylammonium bromide, cetyltrimethylammonium chloride, dodecyltrimethylammonium iodide, trimethyldodecylammonium chloride, benzyldimethyltetradecylammonium chloride, benzylmethylpalmitylammonium chloride, allyldodecyltrimegylammonium bromide, benzyldimethylstearylammonium bromide, There are quaternary ammonium salts such as stearyltrimethylammonium chloride and benzyldimethyltetradecylammonium acetate.

Also, 2-ethylimidazole, 2-undecylimidazole, 2-heptadecyl imidazole, 2-methyl-
4-ethylimidazole, 1-butylimidazole,
1-propyl-2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole.

1-cyanoethyl-2-undecylimidazole, 1-
Imidazoles such as cyanoethyl-2-phenylimidazole, 1-azine-2-methylimidazole, 1-azine-2-undecylimidazole, tripelphosphine tetraphenylborate, tetraphenylphosphonium tetraphenylborate, triethylamine tetraphenylborate, N Examples include tetraphenylborate such as -methylmorpholinetetraphenylborate, 2-ethyl-4-methylimidazoletetraphenylborate, and 2-ethyl-1,4-dimethylimidazoletetraphenylborate.

Also, 1,5-diaza-bicyclo(4,2,O)octene-5,1,8-diaza-bicyclo(7°2.0)undecene-8,1,4-diaza-bicyclo(3,3, O)
octene-4,3-methyl-1,4-diazabicyclo(
3,3,O)octene-4,3,6,7,7-tetramethyl-1,4-diazadicyclo(3,3,O)octene-4,1,5-diaza-bicyclo(3,4,O ) Nonene-5,1,8-diaza-bicyclo(7,3,O) Dodecene-8,1,7-diazabicyclo(4,3°O) Nonene-6,1,5-diazabicyclo(4°4.0 ) Decene-5,1,8-diazabicyclo(7,4,O) Tridecene-8,1,8-diazabicyclo(5,3,O)Decene-7,9-methyl-1,8-diazabicyclo(5,
3,O) Decene-7,1,8,-diazabicyclo(5,
4,O) undecene-7,1,6-diazabicyclo(5
゜5.0) Dodecene-6,1,7-diazabicyclo(6
,5,O) tridecene-7,1,8-diazabicyclo(7,5,O)tetradecene-8,1゜10-diazabicyclo(7,3,O)dodecene-9,1,10-diazabicyclo(7,4 ,O) Tridecene-9,1,1
4-diazabicyclo(11°3.0)hexadecene-1
Also useful are diazabicyclo-alkenes such as 3,1,14-diazabicyclo(11,4,O)butadecene-13. One or more of these compounds can be used in combination depending on the purpose and use.

It is desirable to add a polymerization initiator to the resin composition of the present invention in order to complete its curing by heating for a short time. Such polymerization initiators include benzoyl peroxide, p-chlorobenzoyl peroxide, 2,4-dichlorobenzoyl peroxide, cabrylyl peroxide, lauroyl peroxide, acetyl peroxide, methyl ethyl ketone peroxide, cyclohexanone peroxide, bis (1-Hydroxycyclohexyl peroxide), hydroxyhebutyl peroxide, tertiary butyl hydroperoxide, p-menthane hydroperoxide, tertiary butyl perbenzoate, tertiary butyl peracetate, tertiary butyl peroct Eight,
Organic peroxides such as tertiary-butyl peroxyisobutyrate and di-tert-butyl civa-phthalate are useful, and one or more of them can be used.

In the present invention, it is also possible to use known accelerators, such as mercaptans, sacrifites, β-diketones, metal chelates, and metal soaps, in combination with the above-mentioned polymerization catalyst. In order to improve the storage stability of the resin composition at room temperature, for example, quinones such as p-benzoquinone, naphthoquinone, and phenanthraquinone, hydroquinone,
Known polymerization inhibitors such as phenols and nitro compounds and metal salts such as p-tert-butylcatechol and 2,5-di-tert-butylhydroquinone can be used if desired.

As a means for curing the resin composition of the present invention, in addition to the heating method described above, a curing method using ionizing radiation or light (ultraviolet light) can be used.

As the ionizing radiation, electron beams from various accelerators, gamma rays from isotopes such as cobalt-60, etc. can be used.

Further, as a light source for photocuring, sunlight, a tungsten lamp, an arc lamp, a canon lamp, a halogen lamp, a low pressure or a high pressure mercury lamp is used.

There is no restriction on the use of photosensitizers during photocuring. These include, for example, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, penzathrone, β-methylanthraquinone, benzophenone, 9.10-phenanthrenequinone, anthraquinone, benzophenone,
- Nitroacenaphthene, 1-nitronaphthalene, Michler's ketone, eosin, erythrosin, acridine, etc., and one or more of them can be used in combination.

The key feature of the semiconductor device of the present invention is that the epoxy resin composition consisting of the above-mentioned components has an average particle size of 0.5.
It includes at least spherical alumina powder of ~5 μm. This is due to the fact that conventional resin compositions filled with alumina powder solve the problem of mechanical strength, especially the tendency to generate cracks due to cooling and heating cycles, and, along with this, enable high filling of alumina powder. It is possible to impart high thermal conductivity, or to lower the coefficient of thermal expansion, lower stress, lower water absorption, and lower water permeability of the cured product. Due to these effects, semiconductor devices and surrounding materials.

It is extremely effective in solving problems 1 at the interface with an epoxy resin composition filled with alumina powder, such as heat stress problems, heat dissipation problems, adhesion problems, etc.

0.5 to 5 μm blended in the epoxy resin composition of the present invention
Spherical alumina having an average particle size of 80% by weight or more based on the total weight of the composition.

Alternatively, other fillers such as crystalline silica powder,
70 when used in combination with fused silice powder, zircon powder, etc.
It may be used in an amount of at least 70% by weight, preferably in a range of 70 to 90% by weight.

In order to improve the heat resistance, cold/heat cycle resistance, and moisture resistance of the semiconductor device of the present invention, spherical alumina powder with an average particle size of 0.55 μm and crystalline silica powder and/or fused silica powder are used in combination. That's good. The blending ratio of both is 10/1 to 1/1 in weight ratio of alumina powder for the former and silica powder for the latter.
0 is good.

Particularly preferably 674-476. The particle size of the silica powder is not particularly limited, but is 44 μm.
Below, in particular with a particle size of 5 to 44 μm.

The shape is preferably spherical.

In the epoxy resin composition of the present invention, it is possible to improve the dispersion state of alumina powder and/or silica powder, remove the bound water region (adsorbed water) at the interface of the inorganic filler, and improve compatibility with the epoxy resin. This is an extremely important requirement for improving the heat resistance, cold/heat cycle resistance, adhesiveness, and moisture resistance of semiconductor devices. Namely.

The strength of the cured product cannot be improved by simply increasing the inorganic filler content, which has been considered in the past, because a region of adsorbed water exists between the resin, for example, an epoxy compound, and the inorganic filler. However, it does not improve sufficiently. Furthermore, the presence of this adsorbed water forms a path through which water passes in the bulk of the cured product, making it difficult to reduce water absorption and moisture permeability.

In the present invention, as a means to solve this problem, by using a silane coupling agent and a titanate coupling agent in combination, the problem of the interface between the resin component and the inorganic filler described above can be solved at once. There was found. In particular, the silane coupling agent is an epoxy silane compound, and the titanate coupling agent is 1 formula % (formula %) (wherein, R and R' are H1 lower alkyl groups, and a +
b = 4. ) Acylate type titanate compounds are useful. Moreover, when the epoxy silane compound and the titanate compound are used in a weight ratio of 571 to 115, the effect is large.

Examples of the silane compounds include vinyltris(β-methoxyethoxy)silane CHz=
CI-IS i (OCzH40CHa)a (KBC
1003) Vinyltriethoxysilane CHz=CHS i (OCzHs)a(KBE1
003) Vinylsilane compounds such as vinyltrimethoxysilane CHz=CH8i (OCHa)a (KBM1003), γ-methacryloxypropyltrimethoxysilane Ha G Hz= C-C-0-CaHe5i (0'CH
a) Acrylic silane compounds such as s(KBM5033, β-(3,4 epoxycyclohexyl)ethyltrimethoxysilane γ-glycidoxypropyltrimethoxysilane (KB
M403) γ-Glycidoxypropylmethyljethoxysilane Ha (Epoxysilane compounds such as KBM4023, N-β(aminoethyl)γ-aminopropyltrimethoxysilane.

HzN-CtH4-NHCaHa-S i +OCH
a)a (KBM603) N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane Hs HzN-C2Ha -NH-CaHs Si+OCII
a) z (KBM602) γ-7 Minoprobyltriethoxysilane HzN-CaH
a S i +0CzHs) 5 (KBE903) N-phenyl-γ-aminopropyltrimethoxysilane CsHsNHCaHgSi (OCH3) s (KBM
573), or γ-mercaptopropyltrimethoxysilane, H8-CaHs-5i
(OCHa)s (KBM803) γ-chloropropyltrimethoxysilane, CQCaHa
-5i+○CHa) a (KBM703) N, O-(bistrimethylsilyl)acetamide N, N
'-Bis(trimethylsilyl)urea ((H3C)3S
iNH)zco (BTSU) [ ] is Shin-Etsu Chemical's product name Tetramethoxysilane, Methyltrimethoxysilane, Dimethyldimethoxysilane, Phenyltrimethoxysilane, Tetraethoxysilane, Dimethyljethoxysilane,
Examples include diphenyljethoxysilane. One or more of these may be used in combination.

Among the above compounds, epoxysilane compounds are particularly useful. In addition, examples of titanate compounds include isopropyl triisostearoyl titanate, isopropyl tri(larylmyristyl) titanate, isopropyl isostearoyl dimethacrylate,
Titanate, Isopropyl tri(dodecylbenzenesulfonyl) titanate, Isopropyl isostearoyl diacrylic titanate, Isopropyl tri(diisooctyl phosphate) titanate, Isopropyl trimethacrylic titanate, Isopropyl di(dodecylbenzenesulfonyl)-47mino Benzenesulfonyl titanate, norphosphite titanate - isopropyl isostearoyl di-4-amino-benzoyl titanate, isopropyl tri(
Examples include dioctyl pyrophosphate) titanate, isopropyl triacroyl titanate, dioctyl phosphite titanate, and isopropyl tri(N-ethylamino ethanolamino titanate). One or more of these can be used in combination.

In the present invention, the resin composition may be used depending on the purpose and use.

Various inorganic substances and additives can be mixed and used. Specific examples include zircon, silica, fused silica glass, alumina, aluminum hydroxide, glass, quartz glass, and calcium silicate.

Gypsum, calcium carbonate, magnesite, clay.

Kaolin, talc, iron powder, copper powder, mica, asbestos,
Silicon carbide, boron nitride, molybdenum disulfide.

Fillers such as lead compounds, lead oxides, zinc white, titanium white, carbon black, or higher fatty acids.

These include mold release agents such as waxes, coupling agents such as borane compounds, and aluminum chelate compounds. Furthermore, known flame retardants containing antimony, phosphorus compounds, bromine and chlorine can be used.

It can also be used as a solution, such as in festivals. The solvents used in this case are N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-diethylformamide, N-
Methylformamide.

There are tomethylsulfone oxide, N,N-diethylacetamide, N,N-dimethylmethoxyacetamide, hexamethylphosphoramide, pyridine, dimethylsulfone, tetramethylsulfone and dimethyltetramethylenesulfone, and the phenolic solvent group , phenol, cresol and xylenol.

The above materials may be used alone or in combination of two or more.

The semiconductor device of the present invention can be used by coating the surface of the device with an epoxy resin composition to a predetermined thickness for purposes such as improving moisture resistance, reducing stress, imparting adhesion, and shielding alpha rays. . Furthermore, when providing multilayer wiring, it can be used as an interlayer insulating film. The epoxy resin composition in this case can be used in a solvent-free state or in a state soluble in an organic solvent.

This resin composition solution is desirably applied to the surface of a semiconductor element, etc., and examples of solvents include benzene,
Aromatic hydrocarbons such as toluene and xylene, ethanol,
Alcohols such as 2-propatol, ketones such as acetone and methyl ethyl ketone, chlorinated hydrocarbons, or N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylamide, dimethylsulfoxide, etc. polar solvents.

These resin compositions or solutions are applied to the surfaces of semiconductor elements, lead wires, and the like. (Figure 1-3) The coating method includes dipping the element and lead wires into the composition (powder) or solution, dropping the solution onto the element and lead wires,
Or spray.

There are methods such as spinner coating.

The semiconductor elements and lead wires coated with the resin composition or solution by the method described above are then exposed to light energy or/and at least at room temperature or above.

Particularly preferably, the baking process is carried out at a temperature of 100 to 250°C. Through this treatment, the resin composition of the present invention undergoes polymerization,
Cross-linked to form a protective coating layer over the device. Covered Wi
The thickness of the layer is appropriate depending on the purpose.

be adjusted. In other words, the α-ray shielding film for LSI software and error countermeasures should be 10 to 70 μm, preferably 30 μm.
A thickness of ~60 μm is required, and as an interlayer insulating film for multilayer wiring, it is preferably formed to a thickness of 10 μm or less, particularly 1 μm or less. This is achieved by adjusting the concentration of the solution accordingly, around 10 weight percent in the former case and around 1 weight percent in the latter case.

In this way, as shown in FIG. 1, for example, the element 2 having the protective coating layer 3 and the lead wire 1 are encapsulated with the epoxy resin composition 6 for encapsulation. A sealed semiconductor device is obtained.

In addition, the resin composition or solution of the present invention may contain a silane coupling agent such as epoxysilane, aminosilane, mercaptosilane, or vinylsilane, or a metal alcoholate or metal chelate coupling agent, an alkoxytitanate coupling agent, or a metal alcoholate or metal chelate coupling agent. By blending agents, polybutadiene, butadiene copolymers, siloxane compounds, polyvinyl butyral, phenoxy resins, various known fluorine compounds, etc., it is possible to improve adhesion and adhesion to the surface of semiconductor devices. At the same time, the film properties (
It is also possible to improve the flexibility and crack resistance.

〔Example〕

<Examples 1 to 13> As a polyfunctional epoxy compound, polyglycidyl ether E, 0CN-102S of novolac type phenol resin
(manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 211°, softening point: 66.4
), polyglycidyl ether of resorcin-modified novolak phenol resin (manufactured by Yuka Shell Epoxy Co., Ltd., epoxy equivalent: 182, softening point 60 °C), YL-931 represented by the following formula (manufactured by Yuka Shell Epoxy Co., Ltd.,
epoxy equivalent: 196, softening point: 88°C), RE-3 represented by the following formula (manufactured by Yuka Shell Epoxy Co., Ltd., epoxy equivalent: 195, softening: 81°C), and polyglycidyl ether DCE- of dicyclopentadiene phenolic polymer. 400 (manufactured by Yamaba Kokusaku Pulp Co., Ltd., epoxy equivalent: 310, softening point: 55-80°C, number average molecular weight: 800~
15oO) Schiff glycidyl ether compound CHz-CH-CHz-0+N=l(C<ΣC1(=N
−υ were taken up separately.

In addition, as a curing agent, novolak type phenolic resin Hp
607N (manufactured by Hitachi Chemical), N,N'-4,4'-bismaleimide-diphenylmethane, 2,2-bis(4-
(4-maleimidophenoxy)phenyl]propane, 2
, 2-bis-[4-(4-maleimidophenoxy)phenyl]hexafluoropropane, poly-p-hydroxyste 12M resin (manufactured by Maruzen Sekiyu Co., Ltd.) were taken up, and the predetermined amounts shown in Table 1 were blended.

To these formulations were separately added 2 parts by weight of triphenylphosphine (p-100) and 3 parts by weight of dicyandiamide as curing accelerators, and 0.5 parts by weight of epoxysilane KBM403 (manufactured by Shin-Etsu Chemical Co., Ltd.) as a coupling agent. and acylate type alkoxy titanate S-181
(manufactured by Nippon Soda Co., Ltd.) 2.0 parts by weight, 1.0 parts by weight of calcium stearate as a mold release agent, and 1.0 parts by weight of carnauba wax. As a filler, 60% by weight of spherical alumina with an average particle size of 1 μm, 30% by weight of spherical silica powder with a particle size of 5 to 44 μm (each filler is a proportion of the total amount of the composition), and as an adhesive, carbon black 2. 5 parts by weight was blended.

The formulations were then heated separately to 75-85°C.
After heating and mixing for ten minutes, the mixture was cooled and coarsely ground to obtain a resin composition for semiconductor encapsulation.

This resin composition was heated at 180 to 185°C, 70 kg/d,
The samples were molded using a transfer molding machine under conditions of 2 minutes, with each test and measurement sample preparation mold set in place.

The obtained specimen had a glass transition temperature of 1 and a bending strength of 1.

It was used to measure water absorption rate, elastic modulus, and thermal conductivity. The results are shown in Table 1. Further, an IM bit D-RAM memory LSI (18 pins) was also molded under the same conditions as described above. The obtained resin-sealed memory LSI was 12
After being left in supersaturated steam at 1°C and 2 atm (Pressure Wartska Test: PCT) for a predetermined time, it was taken out and LS
I checked whether the electrical operation of I was normal. Bad L
S I Lm was destroyed and it was confirmed that the failure was due to corrosion of the wiring on the LSI element. L.S.
The moisture resistance reliability of I was determined to be good if the PCT exposure time was long. In addition, LSI thermal cycle test (-1
96°C + 150°C), and those with a longer number of cycles in which cracks were observed in the appearance of the molded product were judged to be good.

<Examples 14-22. Comparative Example> 100 parts by weight of YL-931 as an epoxy compound, phenol novolac type resin HP-6 as a curing agent,
07N, 2,2-bis(4-(4-maleimidophenoxy)phenyl)hexafluoropropane, (abbreviated as F
We selected two types of DAPP-bismaleimide),
The prescribed amounts shown in Table 2 were blended. In these formulations,
As a coupling agent, epoxysilane KBM403.
A human-like mixture was created by changing the blending ratio of acylate titanate S-181 and changing the blending ratio of spherical alumina powder with an average particle size of 1 μm and spherical silica powder with an average particle size of 5 to 48 μm, which are fillers. . Furthermore.

3 parts by weight of triethyleneaminetetraphenylborate as a curing accelerator, 2 parts of carbon black as a coloring agent.
．． 5 parts by weight, Hoechst wax E2.5 as a mold release agent
Parts by weight were added separately.

Next, the mixture was made into a resin composition for semiconductor encapsulation in the same manner as in Example 1, and then used as a test piece and a 1M bit D-R.
The AM memory LSI was sealed and molded to obtain a resin-sealed semiconductor device of the present invention. Thereafter, the same characteristic test as in Example 1 was conducted. The results are shown in Table 2.

〔Effect of the invention〕

The semiconductor device of the present invention has excellent heat resistance, cold/heat cycle resistance, and moisture resistance. This coats and/or covers the semiconductor device.
or heat resistance 2 mechanical strength of the epoxy resin composition to be sealed,
This is due to its excellent thermal conductivity and adhesive properties.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a resin-encapsulated semiconductor device using the resin composition of the present invention as a coating material, and FIGS. FIG. 3 is a cross-sectional view of a portion of the LSI when DESCRIPTION OF SYMBOLS 1... Lead wire, 2... Semiconductor element, 3... Protective coating resin, 5... Condensation degree polyimide PIQ, 6...
mold height 10

Claims (1)

[Claims] 1. A polyfunctional epoxy compound, a curing agent, and an average particle size of 5μ
Using a resin composition part containing spherical Amemina powder of m or less,
A semiconductor device characterized in that at least a portion of a semiconductor element is coated and/or encapsulated. 2. Claim 1, wherein the content of the spherical alumina powder having an average particle size of 0.5 μm or more and 5 μm or less is 80% by weight or more based on the entire resin composition. The semiconductor device described. 3. The spherical alumina powder with an average particle size of 0.5 μm or more and 5 μm or less is treated with a surface treatment agent or/and an organic compound in advance,
The semiconductor device according to claim 1, characterized in that the semiconductor device is coated. 4. The semiconductor device according to claim 1, wherein the curing agent contains a novolac type phenolic resin. 5. The semiconductor device according to claim 1, wherein the curing agent contains an N,N'-substituted bismaleimide compound. 6. Polyfunctional epoxy compound, curing agent, and average particle size of 0
．． At least a portion of the semiconductor element is coated or/and coated with a resin composition containing spherical alumina powder with a particle size of 5 μm or more and 5 μm or less, and spherical silica powder with an average particle size of 14 μm or less.
and a semiconductor device characterized by being formed by sealing and molding. 7. The mixing ratio of the spherical alumina powder with an average particle size of 0.5 μm or more and 5 μm or less and the spherical silica powder with an average particle size of 44 μm or less is from 10/1 to 10/1 by weight.
8. The semiconductor device according to claim 7, wherein the ratio is 1/10 and the total of both is 70 to 90 percent by weight based on the entire resin composition. 8. The thermal conductivity of the coating material and the encapsulation molded product is
7.0×10^-^3~8.0×10^-^2cal/
7. The semiconductor device according to claim 1 or 6, characterized in that the speed is cm/sec/deg. 9. A resin compound containing a polyfunctional epoxy compound, a curing agent, and a spherical alumina powder whose filler has an average particle size of at least 0.5 μm or more and 5 μm or less, and further contains an epoxy silane compound and an acylate as a coupling agent. With the resin composition, using a mixture of titanate compounds of the type,
A semiconductor device characterized in that at least a part of a semiconductor element is coated and/or sealed. 10. Claim 9, characterized in that the mixing ratio of the epoxy silane compound and the acylate type titanate compound is 5/1 to 1/5 in terms of the former/latter (weight ratio). semiconductor devices.