JPH01102160U - - Google Patents
Info
- Publication number
- JPH01102160U JPH01102160U JP19892387U JP19892387U JPH01102160U JP H01102160 U JPH01102160 U JP H01102160U JP 19892387 U JP19892387 U JP 19892387U JP 19892387 U JP19892387 U JP 19892387U JP H01102160 U JPH01102160 U JP H01102160U
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- charging
- charging chamber
- crucible
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19892387U JPH0532540Y2 (en, 2012) | 1987-12-28 | 1987-12-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19892387U JPH0532540Y2 (en, 2012) | 1987-12-28 | 1987-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01102160U true JPH01102160U (en, 2012) | 1989-07-10 |
| JPH0532540Y2 JPH0532540Y2 (en, 2012) | 1993-08-19 |
Family
ID=31489402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19892387U Expired - Lifetime JPH0532540Y2 (en, 2012) | 1987-12-28 | 1987-12-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0532540Y2 (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010163322A (ja) * | 2009-01-16 | 2010-07-29 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶の製造方法 |
| JP2012171822A (ja) * | 2011-02-21 | 2012-09-10 | Shin Etsu Handotai Co Ltd | 炭素ドープシリコン単結晶の製造方法 |
| US8535439B2 (en) | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
-
1987
- 1987-12-28 JP JP19892387U patent/JPH0532540Y2/ja not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8535439B2 (en) | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
| JP2010163322A (ja) * | 2009-01-16 | 2010-07-29 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶の製造方法 |
| JP2012171822A (ja) * | 2011-02-21 | 2012-09-10 | Shin Etsu Handotai Co Ltd | 炭素ドープシリコン単結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0532540Y2 (en, 2012) | 1993-08-19 |
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