JP7891316B2 - 透明なワークピースを分割する方法 - Google Patents

透明なワークピースを分割する方法

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Publication number
JP7891316B2
JP7891316B2 JP2023542970A JP2023542970A JP7891316B2 JP 7891316 B2 JP7891316 B2 JP 7891316B2 JP 2023542970 A JP2023542970 A JP 2023542970A JP 2023542970 A JP2023542970 A JP 2023542970A JP 7891316 B2 JP7891316 B2 JP 7891316B2
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JP
Japan
Prior art keywords
workpiece
laser radiation
focusing zone
pulse
volume
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023542970A
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English (en)
Japanese (ja)
Other versions
JP2024504652A5 (cg-RX-API-DMAC10.html
JP2024504652A (ja
Inventor
ブロス，マルクス
シャンボノー，マクシム
ノルテ，シュテファン
クムカル，マルテ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TRUMPF Laser- und Systemtechnik SE
Original Assignee
TRUMPF Laser- und Systemtechnik SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by TRUMPF Laser- und Systemtechnik SE filed Critical TRUMPF Laser- und Systemtechnik SE
Publication of JP2024504652A publication Critical patent/JP2024504652A/ja
Publication of JP2024504652A5 publication Critical patent/JP2024504652A5/ja
Application granted granted Critical
Publication of JP7891316B2 publication Critical patent/JP7891316B2/ja
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Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/30—Cutting or separating of wafers, substrates or parts of devices by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/52—Ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/54—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
JP2023542970A 2021-01-14 2022-01-10 透明なワークピースを分割する方法 Active JP7891316B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102021100675.9A DE102021100675B4 (de) 2021-01-14 2021-01-14 Verfahren zum Zerteilen eines transparenten Werkstücks
DE102021100675.9 2021-01-14
PCT/EP2022/050305 WO2022152637A1 (de) 2021-01-14 2022-01-10 Verfahren zum zerteilen eines transparenten werkstücks

Publications (3)

Publication Number Publication Date
JP2024504652A JP2024504652A (ja) 2024-02-01
JP2024504652A5 JP2024504652A5 (cg-RX-API-DMAC10.html) 2024-12-17
JP7891316B2 true JP7891316B2 (ja) 2026-07-16

Family

ID=80119358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023542970A Active JP7891316B2 (ja) 2021-01-14 2022-01-10 透明なワークピースを分割する方法

Country Status (8)

Country Link
US (1) US20230377970A1 (cg-RX-API-DMAC10.html)
EP (1) EP4277764A1 (cg-RX-API-DMAC10.html)
JP (1) JP7891316B2 (cg-RX-API-DMAC10.html)
KR (1) KR20230130097A (cg-RX-API-DMAC10.html)
CN (1) CN117222493A (cg-RX-API-DMAC10.html)
CA (1) CA3204948A1 (cg-RX-API-DMAC10.html)
DE (1) DE102021100675B4 (cg-RX-API-DMAC10.html)
WO (1) WO2022152637A1 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2036015B1 (en) * 2023-10-12 2025-04-30 Micronit Holding B V A method of manufacturing a nozzle assembly, comprising weakening a wafer at at least two focal zones in the depth direction by focusing a laser beam

Citations (3)

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JP2013223886A (ja) 2007-04-05 2013-10-31 Charm Engineering Co Ltd レーザ加工方法及び切断方法並びに多層基板を有する構造体の分割方法
US20170252859A1 (en) 2014-11-19 2017-09-07 Trumpf Laser- Und Systemtechnik Gmbh System for asymmetric optical beam shaping
JP2017528323A (ja) 2014-07-14 2017-09-28 コーニング インコーポレイテッド 界面ブロック、そのような界面ブロックを使用する、ある波長範囲内で透過する基板を切断するためのシステムおよび方法

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DE102007028042B3 (de) 2007-06-14 2008-08-07 Universität Zu Lübeck Verfahren zur Laserbearbeitung transparenter Materialien
AU2011279374A1 (en) 2010-07-12 2013-02-07 Filaser Usa Llc Method of material processing by laser filamentation
TW201343296A (zh) 2012-03-16 2013-11-01 Ipg Microsystems Llc 使一工件中具有延伸深度虛飾之雷射切割系統及方法
DE102012110971B4 (de) 2012-11-14 2025-03-20 Schott Ag Verfahren zur Herstellung von linienförmig aufgereihten Schädigungsstellen in einem transparenten Werkstück sowie Verfahren und Vorrichtung zum Trennen eines Werkstücks
WO2014079478A1 (en) * 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
EP2754524B1 (de) * 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
US20150034613A1 (en) * 2013-08-02 2015-02-05 Rofin-Sinar Technologies Inc. System for performing laser filamentation within transparent materials
US9676167B2 (en) * 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9938187B2 (en) 2014-02-28 2018-04-10 Rofin-Sinar Technologies Llc Method and apparatus for material processing using multiple filamentation of burst ultrafast laser pulses
LT3206829T (lt) * 2014-10-13 2019-03-12 Evana Technologies, Uab Lazerinio apdorojimo būdas perskelti arba perpjauti ruošinį, formuojant "adatos" formos pažeidimus
JP6466369B2 (ja) * 2016-06-14 2019-02-06 イムラ アメリカ インコーポレイテッド 超短パルスレーザでの透明材料処理
EP3597353A1 (en) 2016-09-30 2020-01-22 Corning Incorporated Apparatuses for laser processing transparent workpieces using non-axisymmetric beam spots
DE102017121140A1 (de) * 2017-09-01 2019-03-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserbearbeitung eines transparenten Werkstücks
US20190119150A1 (en) * 2017-10-20 2019-04-25 Corning Incorporated Methods for laser processing transparent workpieces using pulsed laser beam focal lines and chemical etching solutions
US20190233321A1 (en) * 2018-01-26 2019-08-01 Corning Incorporated Liquid-assisted laser micromachining of transparent dielectrics
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013223886A (ja) 2007-04-05 2013-10-31 Charm Engineering Co Ltd レーザ加工方法及び切断方法並びに多層基板を有する構造体の分割方法
JP2017528323A (ja) 2014-07-14 2017-09-28 コーニング インコーポレイテッド 界面ブロック、そのような界面ブロックを使用する、ある波長範囲内で透過する基板を切断するためのシステムおよび方法
US20170252859A1 (en) 2014-11-19 2017-09-07 Trumpf Laser- Und Systemtechnik Gmbh System for asymmetric optical beam shaping

Also Published As

Publication number Publication date
CN117222493A (zh) 2023-12-12
EP4277764A1 (de) 2023-11-22
CA3204948A1 (en) 2022-07-21
DE102021100675B4 (de) 2022-08-04
KR20230130097A (ko) 2023-09-11
US20230377970A1 (en) 2023-11-23
DE102021100675A1 (de) 2022-07-14
JP2024504652A (ja) 2024-02-01
WO2022152637A1 (de) 2022-07-21

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