JP7844507B2 - 光電変換装置、光電変換システム、移動体、半導体基板 - Google Patents

光電変換装置、光電変換システム、移動体、半導体基板

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Publication number
JP7844507B2
JP7844507B2 JP2023572263A JP2023572263A JP7844507B2 JP 7844507 B2 JP7844507 B2 JP 7844507B2 JP 2023572263 A JP2023572263 A JP 2023572263A JP 2023572263 A JP2023572263 A JP 2023572263A JP 7844507 B2 JP7844507 B2 JP 7844507B2
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Japan
Prior art keywords
pixel
processing circuit
signal
signal processing
signal line
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Active
Application number
JP2023572263A
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English (en)
Japanese (ja)
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JPWO2023131993A1 (https=
Inventor
秀央 小林
隆典 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of JPWO2023131993A1 publication Critical patent/JPWO2023131993A1/ja
Application granted granted Critical
Publication of JP7844507B2 publication Critical patent/JP7844507B2/ja
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2023572263A 2022-01-05 2022-01-05 光電変換装置、光電変換システム、移動体、半導体基板 Active JP7844507B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000054 WO2023131993A1 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、移動体、半導体基板

Publications (2)

Publication Number Publication Date
JPWO2023131993A1 JPWO2023131993A1 (https=) 2023-07-13
JP7844507B2 true JP7844507B2 (ja) 2026-04-13

Family

ID=87073425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023572263A Active JP7844507B2 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、移動体、半導体基板

Country Status (3)

Country Link
US (1) US20240357263A1 (https=)
JP (1) JP7844507B2 (https=)
WO (1) WO2023131993A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129762A1 (ja) 2005-06-02 2006-12-07 Sony Corporation 半導体イメージセンサ・モジュール及びその製造方法
JP2015026675A (ja) 2013-07-25 2015-02-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2017183658A (ja) 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
JP2021005794A (ja) 2019-06-26 2021-01-14 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、信号処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101378806B1 (ko) * 2007-12-03 2014-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치용 ｔｆｔ 배치
US8350939B2 (en) * 2008-10-01 2013-01-08 Micron Technology, Inc. Vertical 4-way shared pixel in a single column with internal reset and no row select
JP5232189B2 (ja) * 2010-03-11 2013-07-10 株式会社東芝 固体撮像装置
US9165968B2 (en) * 2012-09-14 2015-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. 3D-stacked backside illuminated image sensor and method of making the same
WO2018181583A1 (ja) * 2017-03-28 2018-10-04 株式会社ニコン 撮像素子および電子カメラ
JP7023684B2 (ja) * 2017-11-30 2022-02-22 キヤノン株式会社 撮像装置、撮像システム、移動体
US11140311B2 (en) * 2018-06-21 2021-10-05 Canon Kabushiki Kaisha Detecting apparatus and detecting method
JP7358079B2 (ja) * 2019-06-10 2023-10-10 キヤノン株式会社 撮像装置、撮像システムおよび半導体チップ
TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置
JP2021136590A (ja) * 2020-02-27 2021-09-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP7328176B2 (ja) * 2020-04-15 2023-08-16 キヤノン株式会社 光電変換装置および機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129762A1 (ja) 2005-06-02 2006-12-07 Sony Corporation 半導体イメージセンサ・モジュール及びその製造方法
JP2015026675A (ja) 2013-07-25 2015-02-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2017183658A (ja) 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
JP2021005794A (ja) 2019-06-26 2021-01-14 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、信号処理装置

Also Published As

Publication number Publication date
WO2023131993A1 (ja) 2023-07-13
JPWO2023131993A1 (https=) 2023-07-13
US20240357263A1 (en) 2024-10-24

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