JPWO2023131993A1 - - Google Patents

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Publication number
JPWO2023131993A1
JPWO2023131993A1 JP2023572263A JP2023572263A JPWO2023131993A1 JP WO2023131993 A1 JPWO2023131993 A1 JP WO2023131993A1 JP 2023572263 A JP2023572263 A JP 2023572263A JP 2023572263 A JP2023572263 A JP 2023572263A JP WO2023131993 A1 JPWO2023131993 A1 JP WO2023131993A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023572263A
Other languages
Japanese (ja)
Other versions
JP7844507B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023131993A1 publication Critical patent/JPWO2023131993A1/ja
Application granted granted Critical
Publication of JP7844507B2 publication Critical patent/JP7844507B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2023572263A 2022-01-05 2022-01-05 光電変換装置、光電変換システム、移動体、半導体基板 Active JP7844507B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/000054 WO2023131993A1 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、移動体、半導体基板

Publications (2)

Publication Number Publication Date
JPWO2023131993A1 true JPWO2023131993A1 (https=) 2023-07-13
JP7844507B2 JP7844507B2 (ja) 2026-04-13

Family

ID=87073425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023572263A Active JP7844507B2 (ja) 2022-01-05 2022-01-05 光電変換装置、光電変換システム、移動体、半導体基板

Country Status (3)

Country Link
US (1) US20240357263A1 (https=)
JP (1) JP7844507B2 (https=)
WO (1) WO2023131993A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129762A1 (ja) * 2005-06-02 2006-12-07 Sony Corporation 半導体イメージセンサ・モジュール及びその製造方法
JP2015026675A (ja) * 2013-07-25 2015-02-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2017183658A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
JP2021005794A (ja) * 2019-06-26 2021-01-14 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、信号処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101378806B1 (ko) * 2007-12-03 2014-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치용 ｔｆｔ 배치
US8350939B2 (en) * 2008-10-01 2013-01-08 Micron Technology, Inc. Vertical 4-way shared pixel in a single column with internal reset and no row select
JP5232189B2 (ja) * 2010-03-11 2013-07-10 株式会社東芝 固体撮像装置
US9165968B2 (en) * 2012-09-14 2015-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. 3D-stacked backside illuminated image sensor and method of making the same
WO2018181583A1 (ja) * 2017-03-28 2018-10-04 株式会社ニコン 撮像素子および電子カメラ
JP7023684B2 (ja) * 2017-11-30 2022-02-22 キヤノン株式会社 撮像装置、撮像システム、移動体
US11140311B2 (en) * 2018-06-21 2021-10-05 Canon Kabushiki Kaisha Detecting apparatus and detecting method
JP7358079B2 (ja) * 2019-06-10 2023-10-10 キヤノン株式会社 撮像装置、撮像システムおよび半導体チップ
TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置
JP2021136590A (ja) * 2020-02-27 2021-09-13 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP7328176B2 (ja) * 2020-04-15 2023-08-16 キヤノン株式会社 光電変換装置および機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006129762A1 (ja) * 2005-06-02 2006-12-07 Sony Corporation 半導体イメージセンサ・モジュール及びその製造方法
JP2015026675A (ja) * 2013-07-25 2015-02-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2017183658A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、撮像装置、および電子機器
JP2021005794A (ja) * 2019-06-26 2021-01-14 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、信号処理装置

Also Published As

Publication number Publication date
WO2023131993A1 (ja) 2023-07-13
JP7844507B2 (ja) 2026-04-13
US20240357263A1 (en) 2024-10-24

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