JP7826305B2 - マスクブランク、反射型マスク及び半導体デバイスの製造方法 - Google Patents

マスクブランク、反射型マスク及び半導体デバイスの製造方法

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Publication number
JP7826305B2
JP7826305B2 JP2023523386A JP2023523386A JP7826305B2 JP 7826305 B2 JP7826305 B2 JP 7826305B2 JP 2023523386 A JP2023523386 A JP 2023523386A JP 2023523386 A JP2023523386 A JP 2023523386A JP 7826305 B2 JP7826305 B2 JP 7826305B2
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JP
Japan
Prior art keywords
film
thin film
light
wavelength
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
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JP2023523386A
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English (en)
Japanese (ja)
Other versions
JPWO2022249863A1 (https=
JPWO2022249863A5 (https=
Inventor
洋平 池邊
崇 打田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
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Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of JPWO2022249863A1 publication Critical patent/JPWO2022249863A1/ja
Publication of JPWO2022249863A5 publication Critical patent/JPWO2022249863A5/ja
Application granted granted Critical
Publication of JP7826305B2 publication Critical patent/JP7826305B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023523386A 2021-05-27 2022-05-06 マスクブランク、反射型マスク及び半導体デバイスの製造方法 Active JP7826305B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021089300 2021-05-27
JP2021089300 2021-05-27
PCT/JP2022/019567 WO2022249863A1 (ja) 2021-05-27 2022-05-06 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JPWO2022249863A1 JPWO2022249863A1 (https=) 2022-12-01
JPWO2022249863A5 JPWO2022249863A5 (https=) 2025-03-07
JP7826305B2 true JP7826305B2 (ja) 2026-03-09

Family

ID=84229845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523386A Active JP7826305B2 (ja) 2021-05-27 2022-05-06 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Country Status (5)

Country Link
US (1) US20240184193A1 (https=)
JP (1) JP7826305B2 (https=)
KR (1) KR20240011685A (https=)
TW (1) TW202246882A (https=)
WO (1) WO2022249863A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024119143A (ja) * 2023-02-22 2024-09-03 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006798A (ja) 2002-04-11 2004-01-08 Hoya Corp 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
JP2007251205A (ja) 2007-05-28 2007-09-27 Hoya Corp 露光用反射型マスクブランク及び露光用反射型マスク
US20100167181A1 (en) 2008-12-26 2010-07-01 Hynix Semiconductr Inc. Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same
US20140011121A1 (en) 2012-07-05 2014-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
JP2015008265A (ja) 2013-05-31 2015-01-15 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2021085192A1 (ja) 2019-11-01 2021-05-06 凸版印刷株式会社 反射型マスク及び反射型マスクの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006798A (ja) 2002-04-11 2004-01-08 Hoya Corp 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
JP2007251205A (ja) 2007-05-28 2007-09-27 Hoya Corp 露光用反射型マスクブランク及び露光用反射型マスク
US20100167181A1 (en) 2008-12-26 2010-07-01 Hynix Semiconductr Inc. Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same
US20140011121A1 (en) 2012-07-05 2014-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Mask and method for forming the same
JP2015008265A (ja) 2013-05-31 2015-01-15 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2021085192A1 (ja) 2019-11-01 2021-05-06 凸版印刷株式会社 反射型マスク及び反射型マスクの製造方法

Also Published As

Publication number Publication date
WO2022249863A1 (ja) 2022-12-01
JPWO2022249863A1 (https=) 2022-12-01
KR20240011685A (ko) 2024-01-26
US20240184193A1 (en) 2024-06-06
TW202246882A (zh) 2022-12-01

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