JPWO2022249863A1 - - Google Patents
Info
- Publication number
- JPWO2022249863A1 JPWO2022249863A1 JP2023523386A JP2023523386A JPWO2022249863A1 JP WO2022249863 A1 JPWO2022249863 A1 JP WO2022249863A1 JP 2023523386 A JP2023523386 A JP 2023523386A JP 2023523386 A JP2023523386 A JP 2023523386A JP WO2022249863 A1 JPWO2022249863 A1 JP WO2022249863A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021089300 | 2021-05-27 | ||
| JP2021089300 | 2021-05-27 | ||
| PCT/JP2022/019567 WO2022249863A1 (ja) | 2021-05-27 | 2022-05-06 | マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249863A1 true JPWO2022249863A1 (https=) | 2022-12-01 |
| JPWO2022249863A5 JPWO2022249863A5 (https=) | 2025-03-07 |
| JP7826305B2 JP7826305B2 (ja) | 2026-03-09 |
Family
ID=84229845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023523386A Active JP7826305B2 (ja) | 2021-05-27 | 2022-05-06 | マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240184193A1 (https=) |
| JP (1) | JP7826305B2 (https=) |
| KR (1) | KR20240011685A (https=) |
| TW (1) | TW202246882A (https=) |
| WO (1) | WO2022249863A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024119143A (ja) * | 2023-02-22 | 2024-09-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006798A (ja) * | 2002-04-11 | 2004-01-08 | Hoya Corp | 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法 |
| JP2007251205A (ja) * | 2007-05-28 | 2007-09-27 | Hoya Corp | 露光用反射型マスクブランク及び露光用反射型マスク |
| US20100167181A1 (en) * | 2008-12-26 | 2010-07-01 | Hynix Semiconductr Inc. | Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same |
| US20140011121A1 (en) * | 2012-07-05 | 2014-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask and method for forming the same |
| JP2015008265A (ja) * | 2013-05-31 | 2015-01-15 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| WO2018159785A1 (ja) * | 2017-03-02 | 2018-09-07 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| WO2021085192A1 (ja) * | 2019-11-01 | 2021-05-06 | 凸版印刷株式会社 | 反射型マスク及び反射型マスクの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006228766A (ja) | 2005-02-15 | 2006-08-31 | Toppan Printing Co Ltd | 極端紫外線露光用マスク、マスクブランク、及び露光方法 |
| JP6861095B2 (ja) | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
-
2022
- 2022-05-06 JP JP2023523386A patent/JP7826305B2/ja active Active
- 2022-05-06 US US18/556,839 patent/US20240184193A1/en active Pending
- 2022-05-06 KR KR1020237038576A patent/KR20240011685A/ko active Pending
- 2022-05-06 WO PCT/JP2022/019567 patent/WO2022249863A1/ja not_active Ceased
- 2022-05-18 TW TW111118479A patent/TW202246882A/zh unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006798A (ja) * | 2002-04-11 | 2004-01-08 | Hoya Corp | 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法 |
| JP2007251205A (ja) * | 2007-05-28 | 2007-09-27 | Hoya Corp | 露光用反射型マスクブランク及び露光用反射型マスク |
| US20100167181A1 (en) * | 2008-12-26 | 2010-07-01 | Hynix Semiconductr Inc. | Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same |
| US20140011121A1 (en) * | 2012-07-05 | 2014-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask and method for forming the same |
| JP2015008265A (ja) * | 2013-05-31 | 2015-01-15 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
| WO2018159785A1 (ja) * | 2017-03-02 | 2018-09-07 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| WO2021085192A1 (ja) * | 2019-11-01 | 2021-05-06 | 凸版印刷株式会社 | 反射型マスク及び反射型マスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022249863A1 (ja) | 2022-12-01 |
| KR20240011685A (ko) | 2024-01-26 |
| US20240184193A1 (en) | 2024-06-06 |
| JP7826305B2 (ja) | 2026-03-09 |
| TW202246882A (zh) | 2022-12-01 |
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