JP7818161B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置

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Publication number
JP7818161B2
JP7818161B2 JP2023510823A JP2023510823A JP7818161B2 JP 7818161 B2 JP7818161 B2 JP 7818161B2 JP 2023510823 A JP2023510823 A JP 2023510823A JP 2023510823 A JP2023510823 A JP 2023510823A JP 7818161 B2 JP7818161 B2 JP 7818161B2
Authority
JP
Japan
Prior art keywords
light
layer
insulating film
wiring
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023510823A
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English (en)
Japanese (ja)
Other versions
JPWO2022209748A1 (https=
Inventor
肇 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of JPWO2022209748A1 publication Critical patent/JPWO2022209748A1/ja
Application granted granted Critical
Publication of JP7818161B2 publication Critical patent/JP7818161B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2023510823A 2021-03-29 2022-03-11 画像表示装置の製造方法および画像表示装置 Active JP7818161B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021055841 2021-03-29
JP2021055841 2021-03-29
PCT/JP2022/010856 WO2022209748A1 (ja) 2021-03-29 2022-03-11 画像表示装置の製造方法および画像表示装置

Publications (2)

Publication Number Publication Date
JPWO2022209748A1 JPWO2022209748A1 (https=) 2022-10-06
JP7818161B2 true JP7818161B2 (ja) 2026-02-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023510823A Active JP7818161B2 (ja) 2021-03-29 2022-03-11 画像表示装置の製造方法および画像表示装置

Country Status (4)

Country Link
US (1) US20240014249A1 (https=)
JP (1) JP7818161B2 (https=)
CN (1) CN116783641A (https=)
WO (1) WO2022209748A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
CN110459557A (zh) 2019-08-16 2019-11-15 京东方科技集团股份有限公司 芯片晶圆及其制备方法、Micro-LED显示器
WO2020188851A1 (ja) 2019-03-15 2020-09-24 三菱電機株式会社 Ｌｅｄディスプレイ
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
US20210091279A1 (en) 2019-09-25 2021-03-25 Samsung Electronics Co., Ltd. Semiconductor device, method of fabricating the same, and display device including the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9130114B2 (en) * 2005-01-11 2015-09-08 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication
KR101815256B1 (ko) * 2011-06-28 2018-01-08 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
JP5935643B2 (ja) * 2012-10-10 2016-06-15 サンケン電気株式会社 半導体発光装置
JP5368620B1 (ja) * 2012-11-22 2013-12-18 株式会社東芝 半導体発光素子及びその製造方法
JP2015015321A (ja) * 2013-07-03 2015-01-22 高槻電器工業株式会社 半導体発光素子及びその製造方法
KR101503403B1 (ko) * 2013-09-09 2015-03-17 삼성디스플레이 주식회사 발광소자모듈 및 그 제조방법
US9871060B2 (en) * 2015-02-16 2018-01-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP7079940B2 (ja) * 2017-01-13 2022-06-03 マサチューセッツ インスティテュート オブ テクノロジー ピクセル化ディスプレイ用多層構造体を形成する方法およびピクセル化ディスプレイ用多層構造体
KR102698293B1 (ko) * 2018-11-27 2024-08-23 삼성전자주식회사 디스플레이 장치 및 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019168187A1 (ja) 2018-03-02 2019-09-06 株式会社 東芝 発光ダイオードシート、表示装置、発光装置、表示装置の製造方法及び発光装置の製造方法
WO2020188851A1 (ja) 2019-03-15 2020-09-24 三菱電機株式会社 Ｌｅｄディスプレイ
WO2020226044A1 (ja) 2019-05-08 2020-11-12 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN110459557A (zh) 2019-08-16 2019-11-15 京东方科技集团股份有限公司 芯片晶圆及其制备方法、Micro-LED显示器
US20210091279A1 (en) 2019-09-25 2021-03-25 Samsung Electronics Co., Ltd. Semiconductor device, method of fabricating the same, and display device including the same

Also Published As

Publication number Publication date
US20240014249A1 (en) 2024-01-11
WO2022209748A1 (ja) 2022-10-06
CN116783641A (zh) 2023-09-19
JPWO2022209748A1 (https=) 2022-10-06

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