JP7775333B2 - キャップバイアス電圧を使用した傾斜モードのｓｅｍによる後方散乱電子（ｂｓｅ）撮像 - Google Patents

キャップバイアス電圧を使用した傾斜モードのｓｅｍによる後方散乱電子（ｂｓｅ）撮像

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Publication number
JP7775333B2
JP7775333B2 JP2023566479A JP2023566479A JP7775333B2 JP 7775333 B2 JP7775333 B2 JP 7775333B2 JP 2023566479 A JP2023566479 A JP 2023566479A JP 2023566479 A JP2023566479 A JP 2023566479A JP 7775333 B2 JP7775333 B2 JP 7775333B2
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sample
column
detector
region
electron beam
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Japanese (ja)
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JPWO2022231673A5 (https=
JP2024515821A (ja
JP2024515821A5 (https=
Inventor
ヤウダ ズール，
イゴール ペトロフ，
Original Assignee
アプライド マテリアルズ イスラエル リミテッド
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/053—Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2804—Scattered primary beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2023566479A 2021-04-28 2022-01-24 キャップバイアス電圧を使用した傾斜モードのｓｅｍによる後方散乱電子（ｂｓｅ）撮像 Active JP7775333B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/243,478 US11626267B2 (en) 2021-04-28 2021-04-28 Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage
US17/243,478 2021-04-28
PCT/US2022/013479 WO2022231673A1 (en) 2021-04-28 2022-01-24 Back-scatter electrons (bse) imaging with a sem in tilted mode using cap bias voltage

Publications (4)

Publication Number Publication Date
JP2024515821A JP2024515821A (ja) 2024-04-10
JPWO2022231673A5 JPWO2022231673A5 (https=) 2025-02-03
JP2024515821A5 JP2024515821A5 (https=) 2025-02-03
JP7775333B2 true JP7775333B2 (ja) 2025-11-25

Family

ID=83807779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023566479A Active JP7775333B2 (ja) 2021-04-28 2022-01-24 キャップバイアス電圧を使用した傾斜モードのｓｅｍによる後方散乱電子（ｂｓｅ）撮像

Country Status (6)

Country Link
US (1) US11626267B2 (https=)
EP (1) EP4330657A4 (https=)
JP (1) JP7775333B2 (https=)
KR (1) KR20230173726A (https=)
CN (1) CN117355743A (https=)
WO (1) WO2022231673A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11626267B2 (en) * 2021-04-28 2023-04-11 Applied Materials Israel Ltd. Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage
US11887810B2 (en) 2022-04-20 2024-01-30 Applied Materials Israel Ltd. Reduced charging by low negative voltage in FIB systems
US20240387140A1 (en) * 2023-05-16 2024-11-21 Applied Materials Israel Ltd. Multiple electron beam optics

Citations (12)

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WO2000019482A1 (en) 1998-09-25 2000-04-06 Hitachi, Ltd. Scanning electron microscope
JP2000164167A (ja) 1998-11-19 2000-06-16 Schlumberger Technol Inc 荷電粒子の二重モ―ド検知
JP2001338600A (ja) 2000-05-26 2001-12-07 Hitachi Ltd 電子線装置
JP2002516647A (ja) 1998-01-29 2002-06-04 フェイ カンパニ 環境走査型電子顕微鏡用の気体後方散乱電子検出器
JP2003068241A (ja) 2000-11-08 2003-03-07 Seiko Instruments Inc 走査型電子線装置
JP2003157790A (ja) 2001-11-20 2003-05-30 Advantest Corp 微細凹凸量測定装置及び走査型電子顕微鏡
US20040211913A1 (en) 2003-04-25 2004-10-28 Applied Materials Israel Ltd Objective lens arrangement for use in a charged particle beam column
US20060097184A1 (en) 2004-10-14 2006-05-11 Jurgen Frosien Focusing lens and charged particle beam device for tilted landing angle operation
JP2013045500A (ja) 2011-08-22 2013-03-04 Hitachi High-Technologies Corp 荷電粒子線装置
WO2013058077A1 (ja) 2011-10-20 2013-04-25 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP2015008148A (ja) 2012-02-02 2015-01-15 アプライド マテリアルズ イスラエル リミテッド 走査電子顕微鏡画像を用いた３次元マッピング
WO2018233900A1 (en) 2017-06-20 2018-12-27 Applied Materials, Inc. Method and apparatus for inspecting a sample

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JPS63102148A (ja) * 1986-10-17 1988-05-07 Akashi Seisakusho Co Ltd 電子線装置
US4933552A (en) * 1988-10-06 1990-06-12 International Business Machines Corporation Inspection system utilizing retarding field back scattered electron collection
JP3261792B2 (ja) * 1993-03-16 2002-03-04 株式会社日立製作所 走査電子顕微鏡
US5493116A (en) * 1993-10-26 1996-02-20 Metrologix, Inc. Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
JP3774953B2 (ja) * 1995-10-19 2006-05-17 株式会社日立製作所 走査形電子顕微鏡
US6300629B1 (en) * 1998-09-30 2001-10-09 Applied Materials, Inc. Defect review SEM with automatically switchable detector
US6642520B2 (en) * 1999-04-13 2003-11-04 Kabushiki Kaisha Topcon Scanning electron microscope
US6670610B2 (en) 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
US7067807B2 (en) 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
JP4691453B2 (ja) * 2006-02-22 2011-06-01 株式会社日立ハイテクノロジーズ 欠陥表示方法およびその装置
US8709269B2 (en) 2007-08-22 2014-04-29 Applied Materials Israel, Ltd. Method and system for imaging a cross section of a specimen
EP2629317B1 (en) * 2012-02-20 2015-01-28 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with dynamic focus and method of operating thereof
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Publication number Priority date Publication date Assignee Title
JP2002516647A (ja) 1998-01-29 2002-06-04 フェイ カンパニ 環境走査型電子顕微鏡用の気体後方散乱電子検出器
WO2000019482A1 (en) 1998-09-25 2000-04-06 Hitachi, Ltd. Scanning electron microscope
JP2000164167A (ja) 1998-11-19 2000-06-16 Schlumberger Technol Inc 荷電粒子の二重モ―ド検知
JP2001338600A (ja) 2000-05-26 2001-12-07 Hitachi Ltd 電子線装置
JP2003068241A (ja) 2000-11-08 2003-03-07 Seiko Instruments Inc 走査型電子線装置
JP2003157790A (ja) 2001-11-20 2003-05-30 Advantest Corp 微細凹凸量測定装置及び走査型電子顕微鏡
US20040211913A1 (en) 2003-04-25 2004-10-28 Applied Materials Israel Ltd Objective lens arrangement for use in a charged particle beam column
US20060097184A1 (en) 2004-10-14 2006-05-11 Jurgen Frosien Focusing lens and charged particle beam device for tilted landing angle operation
JP2013045500A (ja) 2011-08-22 2013-03-04 Hitachi High-Technologies Corp 荷電粒子線装置
WO2013058077A1 (ja) 2011-10-20 2013-04-25 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
JP2015008148A (ja) 2012-02-02 2015-01-15 アプライド マテリアルズ イスラエル リミテッド 走査電子顕微鏡画像を用いた３次元マッピング
WO2018233900A1 (en) 2017-06-20 2018-12-27 Applied Materials, Inc. Method and apparatus for inspecting a sample

Also Published As

Publication number Publication date
WO2022231673A1 (en) 2022-11-03
EP4330657A1 (en) 2024-03-06
JP2024515821A (ja) 2024-04-10
EP4330657A4 (en) 2025-03-12
CN117355743A (zh) 2024-01-05
US11626267B2 (en) 2023-04-11
KR20230173726A (ko) 2023-12-27
US20220351937A1 (en) 2022-11-03

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