JP2024515821A5 - - Google Patents

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Publication number
JP2024515821A5
JP2024515821A5 JP2023566479A JP2023566479A JP2024515821A5 JP 2024515821 A5 JP2024515821 A5 JP 2024515821A5 JP 2023566479 A JP2023566479 A JP 2023566479A JP 2023566479 A JP2023566479 A JP 2023566479A JP 2024515821 A5 JP2024515821 A5 JP 2024515821A5
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JP
Japan
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JP2023566479A
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Japanese (ja)
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JPWO2022231673A5 (https=
JP2024515821A (ja
JP7775333B2 (ja
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JP2023566479A 2021-04-28 2022-01-24 キャップバイアス電圧を使用した傾斜モードのsemによる後方散乱電子(bse)撮像 Active JP7775333B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/243,478 US11626267B2 (en) 2021-04-28 2021-04-28 Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage
US17/243,478 2021-04-28
PCT/US2022/013479 WO2022231673A1 (en) 2021-04-28 2022-01-24 Back-scatter electrons (bse) imaging with a sem in tilted mode using cap bias voltage

Publications (4)

Publication Number Publication Date
JP2024515821A JP2024515821A (ja) 2024-04-10
JPWO2022231673A5 JPWO2022231673A5 (https=) 2025-02-03
JP2024515821A5 true JP2024515821A5 (https=) 2025-02-03
JP7775333B2 JP7775333B2 (ja) 2025-11-25

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ID=83807779

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JP2023566479A Active JP7775333B2 (ja) 2021-04-28 2022-01-24 キャップバイアス電圧を使用した傾斜モードのsemによる後方散乱電子(bse)撮像

Country Status (6)

Country Link
US (1) US11626267B2 (https=)
EP (1) EP4330657A4 (https=)
JP (1) JP7775333B2 (https=)
KR (1) KR20230173726A (https=)
CN (1) CN117355743A (https=)
WO (1) WO2022231673A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11626267B2 (en) * 2021-04-28 2023-04-11 Applied Materials Israel Ltd. Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage
US11887810B2 (en) 2022-04-20 2024-01-30 Applied Materials Israel Ltd. Reduced charging by low negative voltage in FIB systems
US20240387140A1 (en) * 2023-05-16 2024-11-21 Applied Materials Israel Ltd. Multiple electron beam optics

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