CN117355743A - 使用帽偏压以倾斜模式的扫描式电子显微镜（sem）作反散射电子（bse）成像 - Google Patents

使用帽偏压以倾斜模式的扫描式电子显微镜（sem）作反散射电子（bse）成像 Download PDF

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Publication number
CN117355743A
CN117355743A CN202280036499.4A CN202280036499A CN117355743A CN 117355743 A CN117355743 A CN 117355743A CN 202280036499 A CN202280036499 A CN 202280036499A CN 117355743 A CN117355743 A CN 117355743A
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CN
China
Prior art keywords
sample
cap
column
electron beam
region
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Pending
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CN202280036499.4A
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English (en)
Chinese (zh)
Inventor
耶胡达·祖尔
伊戈尔·彼得罗夫
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Applied Materials Israel Ltd
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Applied Materials Israel Ltd
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Publication of CN117355743A publication Critical patent/CN117355743A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/053—Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/418—Imaging electron microscope
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2804—Scattered primary beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN202280036499.4A 2021-04-28 2022-01-24 使用帽偏压以倾斜模式的扫描式电子显微镜（sem）作反散射电子（bse）成像 Pending CN117355743A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/243,478 US11626267B2 (en) 2021-04-28 2021-04-28 Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage
US17/243,478 2021-04-28
PCT/US2022/013479 WO2022231673A1 (en) 2021-04-28 2022-01-24 Back-scatter electrons (bse) imaging with a sem in tilted mode using cap bias voltage

Publications (1)

Publication Number Publication Date
CN117355743A true CN117355743A (zh) 2024-01-05

Family

ID=83807779

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280036499.4A Pending CN117355743A (zh) 2021-04-28 2022-01-24 使用帽偏压以倾斜模式的扫描式电子显微镜（sem）作反散射电子（bse）成像

Country Status (6)

Country Link
US (1) US11626267B2 (https=)
EP (1) EP4330657A4 (https=)
JP (1) JP7775333B2 (https=)
KR (1) KR20230173726A (https=)
CN (1) CN117355743A (https=)
WO (1) WO2022231673A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11626267B2 (en) * 2021-04-28 2023-04-11 Applied Materials Israel Ltd. Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage
US11887810B2 (en) 2022-04-20 2024-01-30 Applied Materials Israel Ltd. Reduced charging by low negative voltage in FIB systems
US20240387140A1 (en) * 2023-05-16 2024-11-21 Applied Materials Israel Ltd. Multiple electron beam optics

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US4933552A (en) * 1988-10-06 1990-06-12 International Business Machines Corporation Inspection system utilizing retarding field back scattered electron collection
JP3261792B2 (ja) * 1993-03-16 2002-03-04 株式会社日立製作所 走査電子顕微鏡
US5493116A (en) * 1993-10-26 1996-02-20 Metrologix, Inc. Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices
JP3774953B2 (ja) * 1995-10-19 2006-05-17 株式会社日立製作所 走査形電子顕微鏡
US5945672A (en) 1998-01-29 1999-08-31 Fei Company Gaseous backscattered electron detector for an environmental scanning electron microscope
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US6300629B1 (en) * 1998-09-30 2001-10-09 Applied Materials, Inc. Defect review SEM with automatically switchable detector
KR20000034962A (ko) 1998-11-19 2000-06-26 하이든 마틴 하전입자의 이중-모드 검출 장치 및 방법
US6642520B2 (en) * 1999-04-13 2003-11-04 Kabushiki Kaisha Topcon Scanning electron microscope
JP4073149B2 (ja) 2000-05-26 2008-04-09 株式会社日立製作所 電子線装置
JP2003068241A (ja) 2000-11-08 2003-03-07 Seiko Instruments Inc 走査型電子線装置
JP2003157790A (ja) 2001-11-20 2003-05-30 Advantest Corp 微細凹凸量測定装置及び走査型電子顕微鏡
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EP1648018B1 (en) 2004-10-14 2017-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Focussing lens and charged particle beam device for non zero landing angle operation
JP4691453B2 (ja) * 2006-02-22 2011-06-01 株式会社日立ハイテクノロジーズ 欠陥表示方法およびその装置
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Also Published As

Publication number Publication date
WO2022231673A1 (en) 2022-11-03
EP4330657A1 (en) 2024-03-06
JP2024515821A (ja) 2024-04-10
EP4330657A4 (en) 2025-03-12
US11626267B2 (en) 2023-04-11
KR20230173726A (ko) 2023-12-27
JP7775333B2 (ja) 2025-11-25
US20220351937A1 (en) 2022-11-03

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