KR20230173726A - 캡 바이어스 전압을 사용하여 경사 모드의 sem을 이용한 후방산란된 전자들(bse) 이미징 - Google Patents
캡 바이어스 전압을 사용하여 경사 모드의 sem을 이용한 후방산란된 전자들(bse) 이미징 Download PDFInfo
- Publication number
- KR20230173726A KR20230173726A KR1020237040662A KR20237040662A KR20230173726A KR 20230173726 A KR20230173726 A KR 20230173726A KR 1020237040662 A KR1020237040662 A KR 1020237040662A KR 20237040662 A KR20237040662 A KR 20237040662A KR 20230173726 A KR20230173726 A KR 20230173726A
- Authority
- KR
- South Korea
- Prior art keywords
- sample
- column
- sem
- electron beam
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/053—Investigating materials by wave or particle radiation by diffraction, scatter or reflection back scatter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/40—Imaging
- G01N2223/418—Imaging electron microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
- G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2804—Scattered primary beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/243,478 US11626267B2 (en) | 2021-04-28 | 2021-04-28 | Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage |
| US17/243,478 | 2021-04-28 | ||
| PCT/US2022/013479 WO2022231673A1 (en) | 2021-04-28 | 2022-01-24 | Back-scatter electrons (bse) imaging with a sem in tilted mode using cap bias voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230173726A true KR20230173726A (ko) | 2023-12-27 |
Family
ID=83807779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237040662A Pending KR20230173726A (ko) | 2021-04-28 | 2022-01-24 | 캡 바이어스 전압을 사용하여 경사 모드의 sem을 이용한 후방산란된 전자들(bse) 이미징 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11626267B2 (https=) |
| EP (1) | EP4330657A4 (https=) |
| JP (1) | JP7775333B2 (https=) |
| KR (1) | KR20230173726A (https=) |
| CN (1) | CN117355743A (https=) |
| WO (1) | WO2022231673A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11626267B2 (en) * | 2021-04-28 | 2023-04-11 | Applied Materials Israel Ltd. | Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage |
| US11887810B2 (en) | 2022-04-20 | 2024-01-30 | Applied Materials Israel Ltd. | Reduced charging by low negative voltage in FIB systems |
| US20240387140A1 (en) * | 2023-05-16 | 2024-11-21 | Applied Materials Israel Ltd. | Multiple electron beam optics |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63102148A (ja) * | 1986-10-17 | 1988-05-07 | Akashi Seisakusho Co Ltd | 電子線装置 |
| US4933552A (en) * | 1988-10-06 | 1990-06-12 | International Business Machines Corporation | Inspection system utilizing retarding field back scattered electron collection |
| JP3261792B2 (ja) * | 1993-03-16 | 2002-03-04 | 株式会社日立製作所 | 走査電子顕微鏡 |
| US5493116A (en) * | 1993-10-26 | 1996-02-20 | Metrologix, Inc. | Detection system for precision measurements and high resolution inspection of high aspect ratio structures using particle beam devices |
| JP3774953B2 (ja) * | 1995-10-19 | 2006-05-17 | 株式会社日立製作所 | 走査形電子顕微鏡 |
| US5945672A (en) | 1998-01-29 | 1999-08-31 | Fei Company | Gaseous backscattered electron detector for an environmental scanning electron microscope |
| US6501077B1 (en) | 1998-09-25 | 2002-12-31 | Hitachi, Ltd. | Scanning electron microscope |
| US6300629B1 (en) * | 1998-09-30 | 2001-10-09 | Applied Materials, Inc. | Defect review SEM with automatically switchable detector |
| KR20000034962A (ko) | 1998-11-19 | 2000-06-26 | 하이든 마틴 | 하전입자의 이중-모드 검출 장치 및 방법 |
| US6642520B2 (en) * | 1999-04-13 | 2003-11-04 | Kabushiki Kaisha Topcon | Scanning electron microscope |
| JP4073149B2 (ja) | 2000-05-26 | 2008-04-09 | 株式会社日立製作所 | 電子線装置 |
| JP2003068241A (ja) | 2000-11-08 | 2003-03-07 | Seiko Instruments Inc | 走査型電子線装置 |
| JP2003157790A (ja) | 2001-11-20 | 2003-05-30 | Advantest Corp | 微細凹凸量測定装置及び走査型電子顕微鏡 |
| US6670610B2 (en) | 2001-11-26 | 2003-12-30 | Applied Materials, Inc. | System and method for directing a miller |
| US6897442B2 (en) | 2003-04-25 | 2005-05-24 | Applied Materials Israel, Ltd. | Objective lens arrangement for use in a charged particle beam column |
| US7067807B2 (en) | 2004-09-08 | 2006-06-27 | Applied Materials, Israel, Ltd. | Charged particle beam column and method of its operation |
| EP1648018B1 (en) | 2004-10-14 | 2017-02-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Focussing lens and charged particle beam device for non zero landing angle operation |
| JP4691453B2 (ja) * | 2006-02-22 | 2011-06-01 | 株式会社日立ハイテクノロジーズ | 欠陥表示方法およびその装置 |
| US8709269B2 (en) | 2007-08-22 | 2014-04-29 | Applied Materials Israel, Ltd. | Method and system for imaging a cross section of a specimen |
| JP5677236B2 (ja) | 2011-08-22 | 2015-02-25 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP5814741B2 (ja) | 2011-10-20 | 2015-11-17 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| US8604427B2 (en) | 2012-02-02 | 2013-12-10 | Applied Materials Israel, Ltd. | Three-dimensional mapping using scanning electron microscope images |
| EP2629317B1 (en) * | 2012-02-20 | 2015-01-28 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device with dynamic focus and method of operating thereof |
| US9190241B2 (en) | 2013-03-25 | 2015-11-17 | Hermes-Microvision, Inc. | Charged particle beam apparatus |
| EP3174085A1 (en) | 2015-11-30 | 2017-05-31 | FEI Company | Filter assembly for discriminating secondary and backscattered electrons in a non-transmission charged particle microscope |
| US20180364563A1 (en) | 2017-06-20 | 2018-12-20 | Applied Materials, Inc. | Method and apparatus for inspecting a sample |
| US10777382B2 (en) * | 2017-11-21 | 2020-09-15 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Low voltage scanning electron microscope and method for specimen observation |
| WO2019233991A1 (en) * | 2018-06-08 | 2019-12-12 | Asml Netherlands B.V. | Semiconductor charged particle detector for microscopy |
| DE112018007565B4 (de) * | 2018-07-02 | 2024-02-08 | Hitachi High-Tech Corporation | Rasterelektronenmikroskop |
| US11440151B2 (en) * | 2019-06-07 | 2022-09-13 | Applied Materials Israel Ltd. | Milling a multi-layered object |
| US11404244B1 (en) * | 2021-02-10 | 2022-08-02 | Applied Materials Israel Ltd. | High-resolution x-ray spectroscopy surface material analysis |
| US11626267B2 (en) * | 2021-04-28 | 2023-04-11 | Applied Materials Israel Ltd. | Back-scatter electrons (BSE) imaging with a SEM in tilted mode using cap bias voltage |
-
2021
- 2021-04-28 US US17/243,478 patent/US11626267B2/en active Active
-
2022
- 2022-01-24 EP EP22796308.9A patent/EP4330657A4/en active Pending
- 2022-01-24 JP JP2023566479A patent/JP7775333B2/ja active Active
- 2022-01-24 WO PCT/US2022/013479 patent/WO2022231673A1/en not_active Ceased
- 2022-01-24 CN CN202280036499.4A patent/CN117355743A/zh active Pending
- 2022-01-24 KR KR1020237040662A patent/KR20230173726A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022231673A1 (en) | 2022-11-03 |
| EP4330657A1 (en) | 2024-03-06 |
| JP2024515821A (ja) | 2024-04-10 |
| EP4330657A4 (en) | 2025-03-12 |
| CN117355743A (zh) | 2024-01-05 |
| US11626267B2 (en) | 2023-04-11 |
| JP7775333B2 (ja) | 2025-11-25 |
| US20220351937A1 (en) | 2022-11-03 |
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St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
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| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| E13 | Pre-grant limitation requested |
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| P11 | Amendment of application requested |
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