JP7711661B2 - ウェハ製造方法 - Google Patents

ウェハ製造方法

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Publication number
JP7711661B2
JP7711661B2 JP2022128099A JP2022128099A JP7711661B2 JP 7711661 B2 JP7711661 B2 JP 7711661B2 JP 2022128099 A JP2022128099 A JP 2022128099A JP 2022128099 A JP2022128099 A JP 2022128099A JP 7711661 B2 JP7711661 B2 JP 7711661B2
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Japan
Prior art keywords
ingot
wafer
irradiation
laser beam
absorption coefficient
Prior art date
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Application number
JP2022128099A
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English (en)
Japanese (ja)
Other versions
JP2023085188A5 (https=
JP2023085188A (ja
Inventor
浩一朗 安田
亮汰 ▲高▼木
知樹 河津
颯大 野村
秀彰 白井
バーマン ソルタニ
駿介 傍島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to CN202280081607.XA priority Critical patent/CN118402043A/zh
Priority to PCT/JP2022/041570 priority patent/WO2023106017A1/ja
Priority to EP22903948.2A priority patent/EP4447092A4/en
Publication of JP2023085188A publication Critical patent/JP2023085188A/ja
Publication of JP2023085188A5 publication Critical patent/JP2023085188A5/ja
Priority to US18/735,595 priority patent/US20240326165A1/en
Application granted granted Critical
Publication of JP7711661B2 publication Critical patent/JP7711661B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2022128099A 2021-12-08 2022-08-10 ウェハ製造方法 Active JP7711661B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202280081607.XA CN118402043A (zh) 2021-12-08 2022-11-08 晶圆制造方法
PCT/JP2022/041570 WO2023106017A1 (ja) 2021-12-08 2022-11-08 ウェハ製造方法
EP22903948.2A EP4447092A4 (en) 2021-12-08 2022-11-08 WAFER MANUFACTURING METHOD
US18/735,595 US20240326165A1 (en) 2021-12-08 2024-06-06 Wafer manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021199576 2021-12-08
JP2021199576 2021-12-08

Publications (3)

Publication Number Publication Date
JP2023085188A JP2023085188A (ja) 2023-06-20
JP2023085188A5 JP2023085188A5 (https=) 2023-11-22
JP7711661B2 true JP7711661B2 (ja) 2025-07-23

Family

ID=86775670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022128099A Active JP7711661B2 (ja) 2021-12-08 2022-08-10 ウェハ製造方法

Country Status (1)

Country Link
JP (1) JP7711661B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119304375B (zh) * 2024-12-16 2025-03-28 河北同光半导体股份有限公司 一种改善激光剥离表面粗糙度的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017220631A (ja) 2016-06-10 2017-12-14 株式会社ディスコ ウエーハ生成方法及び剥離装置
JP2020031134A (ja) 2018-08-22 2020-02-27 株式会社ディスコ ファセット領域の検出方法及び検出装置
JP2020047619A (ja) 2018-09-14 2020-03-26 株式会社ディスコ ウエーハの生成方法およびレーザー加工装置
WO2020090896A1 (ja) 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置
JP2020102522A (ja) 2018-12-21 2020-07-02 浜松ホトニクス株式会社 レーザ加工装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017220631A (ja) 2016-06-10 2017-12-14 株式会社ディスコ ウエーハ生成方法及び剥離装置
JP2020031134A (ja) 2018-08-22 2020-02-27 株式会社ディスコ ファセット領域の検出方法及び検出装置
JP2020047619A (ja) 2018-09-14 2020-03-26 株式会社ディスコ ウエーハの生成方法およびレーザー加工装置
WO2020090896A1 (ja) 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置
JP2020102522A (ja) 2018-12-21 2020-07-02 浜松ホトニクス株式会社 レーザ加工装置

Also Published As

Publication number Publication date
JP2023085188A (ja) 2023-06-20

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