JP7668093B2 - 成膜方法、成膜装置、および半導体装置の製造方法 - Google Patents
成膜方法、成膜装置、および半導体装置の製造方法 Download PDFInfo
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- JP7668093B2 JP7668093B2 JP2020135695A JP2020135695A JP7668093B2 JP 7668093 B2 JP7668093 B2 JP 7668093B2 JP 2020135695 A JP2020135695 A JP 2020135695A JP 2020135695 A JP2020135695 A JP 2020135695A JP 7668093 B2 JP7668093 B2 JP 7668093B2
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- 238000000034 method Methods 0.000 title claims description 101
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000007789 gas Substances 0.000 claims description 335
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 53
- 230000008569 process Effects 0.000 claims description 47
- 238000012545 processing Methods 0.000 claims description 47
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 46
- 239000002344 surface layer Substances 0.000 claims description 45
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 16
- 230000007246 mechanism Effects 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- 239000012495 reaction gas Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910008482 TiSiN Inorganic materials 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical group NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 4
- 239000005046 Chlorosilane Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000001282 organosilanes Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 174
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 32
- 239000010410 layer Substances 0.000 description 17
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 16
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000010926 purge Methods 0.000 description 11
- 229910003074 TiCl4 Inorganic materials 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011534 incubation Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 2
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- VUGMARFZKDASCX-UHFFFAOYSA-N 2-methyl-N-silylpropan-2-amine Chemical compound CC(C)(C)N[SiH3] VUGMARFZKDASCX-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- 229910004356 Ti Raw Inorganic materials 0.000 description 1
- 229910010386 TiI4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- -1 butylaminosilane Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- AWFPGKLDLMAPMK-UHFFFAOYSA-N dimethylaminosilicon Chemical compound CN(C)[Si] AWFPGKLDLMAPMK-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020227026933A KR102639411B1 (ko) | 2020-01-15 | 2020-11-30 | 성막 방법, 성막 장치 및 반도체 장치의 제조 방법 |
| PCT/JP2020/044478 WO2021145077A1 (ja) | 2020-01-15 | 2020-11-30 | 成膜方法、成膜装置、および半導体装置の製造方法 |
| US17/758,819 US20230037960A1 (en) | 2020-01-15 | 2020-11-30 | Film forming method, film forming device, and method for manufacturing semiconductor device |
| CN202080092277.5A CN114929933A (zh) | 2020-01-15 | 2020-11-30 | 成膜方法、成膜装置以及半导体装置的制造方法 |
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| JP2020004161 | 2020-01-15 | ||
| JP2020004161 | 2020-01-15 |
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| Publication Number | Publication Date |
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| JP2021110030A JP2021110030A (ja) | 2021-08-02 |
| JP2021110030A5 JP2021110030A5 (enrdf_load_stackoverflow) | 2023-03-13 |
| JP7668093B2 true JP7668093B2 (ja) | 2025-04-24 |
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| JP2020135695A Active JP7668093B2 (ja) | 2020-01-15 | 2020-08-11 | 成膜方法、成膜装置、および半導体装置の製造方法 |
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| JP (1) | JP7668093B2 (enrdf_load_stackoverflow) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014183195A (ja) | 2013-03-19 | 2014-09-29 | Hitachi Ltd | 半導体装置とその製造方法 |
| JP2017183551A (ja) | 2016-03-30 | 2017-10-05 | 東京エレクトロン株式会社 | ボロンドープシリコンゲルマニウム膜の形成方法および形成装置 |
| US20180347040A1 (en) | 2017-06-02 | 2018-12-06 | Eugenus, Inc. | TiSiN Coating Method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10144629A (ja) * | 1996-11-11 | 1998-05-29 | Mitsubishi Electric Corp | バリアメタルの製造方法 |
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- 2020-08-11 JP JP2020135695A patent/JP7668093B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014183195A (ja) | 2013-03-19 | 2014-09-29 | Hitachi Ltd | 半導体装置とその製造方法 |
| JP2017183551A (ja) | 2016-03-30 | 2017-10-05 | 東京エレクトロン株式会社 | ボロンドープシリコンゲルマニウム膜の形成方法および形成装置 |
| US20180347040A1 (en) | 2017-06-02 | 2018-12-06 | Eugenus, Inc. | TiSiN Coating Method |
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| JP2021110030A (ja) | 2021-08-02 |
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