JP2021110030A5 - - Google Patents

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Publication number
JP2021110030A5
JP2021110030A5 JP2020135695A JP2020135695A JP2021110030A5 JP 2021110030 A5 JP2021110030 A5 JP 2021110030A5 JP 2020135695 A JP2020135695 A JP 2020135695A JP 2020135695 A JP2020135695 A JP 2020135695A JP 2021110030 A5 JP2021110030 A5 JP 2021110030A5
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JP
Japan
Prior art keywords
dichlorosilane
film forming
forming method
containing gas
gas
Prior art date
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Application number
JP2020135695A
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English (en)
Japanese (ja)
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JP7668093B2 (ja
JP2021110030A (ja
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Publication date
Application filed filed Critical
Priority to KR1020227026933A priority Critical patent/KR102639411B1/ko
Priority to PCT/JP2020/044478 priority patent/WO2021145077A1/ja
Priority to US17/758,819 priority patent/US20230037960A1/en
Priority to CN202080092277.5A priority patent/CN114929933A/zh
Publication of JP2021110030A publication Critical patent/JP2021110030A/ja
Publication of JP2021110030A5 publication Critical patent/JP2021110030A5/ja
Application granted granted Critical
Publication of JP7668093B2 publication Critical patent/JP7668093B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2020135695A 2020-01-15 2020-08-11 成膜方法、成膜装置、および半導体装置の製造方法 Active JP7668093B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020227026933A KR102639411B1 (ko) 2020-01-15 2020-11-30 성막 방법, 성막 장치 및 반도체 장치의 제조 방법
PCT/JP2020/044478 WO2021145077A1 (ja) 2020-01-15 2020-11-30 成膜方法、成膜装置、および半導体装置の製造方法
US17/758,819 US20230037960A1 (en) 2020-01-15 2020-11-30 Film forming method, film forming device, and method for manufacturing semiconductor device
CN202080092277.5A CN114929933A (zh) 2020-01-15 2020-11-30 成膜方法、成膜装置以及半导体装置的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020004161 2020-01-15
JP2020004161 2020-01-15

Publications (3)

Publication Number Publication Date
JP2021110030A JP2021110030A (ja) 2021-08-02
JP2021110030A5 true JP2021110030A5 (enrdf_load_stackoverflow) 2023-03-13
JP7668093B2 JP7668093B2 (ja) 2025-04-24

Family

ID=77059218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020135695A Active JP7668093B2 (ja) 2020-01-15 2020-08-11 成膜方法、成膜装置、および半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP7668093B2 (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144629A (ja) * 1996-11-11 1998-05-29 Mitsubishi Electric Corp バリアメタルの製造方法
JP6091273B2 (ja) * 2013-03-19 2017-03-08 株式会社日立製作所 半導体装置とその製造方法
JP6624998B2 (ja) * 2016-03-30 2019-12-25 東京エレクトロン株式会社 ボロンドープシリコンゲルマニウム膜の形成方法および形成装置
US11401607B2 (en) * 2017-06-02 2022-08-02 Eugenus, Inc. TiSiN coating method

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