JP7662130B2 - 金属酸窒化物層を有する多接合型光起電デバイス - Google Patents

金属酸窒化物層を有する多接合型光起電デバイス Download PDF

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JP7662130B2
JP7662130B2 JP2022577467A JP2022577467A JP7662130B2 JP 7662130 B2 JP7662130 B2 JP 7662130B2 JP 2022577467 A JP2022577467 A JP 2022577467A JP 2022577467 A JP2022577467 A JP 2022577467A JP 7662130 B2 JP7662130 B2 JP 7662130B2
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layer
subcell
photovoltaic device
multijunction photovoltaic
amorphous silicon
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JP2023531422A (ja
JP2023531422A5 (https=
Inventor
キルナー，シモン
ペレス，ローラ ミランダ
ケッチャウ，イモ
スナイス，ヘンリー
クロスランド，エドワード
ケイス，クリストファー
シャープ，アラン
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オックスフォード フォトボルテイクス リミテッド
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    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
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    • H01—ELECTRIC ELEMENTS
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    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
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    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
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    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
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    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
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    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
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    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
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    • H10K39/15—Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
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JP2022577467A 2020-06-18 2021-06-17 金属酸窒化物層を有する多接合型光起電デバイス Active JP7662130B2 (ja)

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EP20180705 2020-06-18
EP20180705.4 2020-06-18
PCT/GB2021/051548 WO2021255468A1 (en) 2020-06-18 2021-06-17 Multijunction photovoltaic devices with metal oxynitride layer

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JP2023531422A5 JP2023531422A5 (https=) 2024-05-22
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US (1) US12300446B2 (https=)
EP (1) EP4169080A1 (https=)
JP (1) JP7662130B2 (https=)
KR (1) KR102917650B1 (https=)
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WO2025249111A1 (ja) * 2024-05-27 2025-12-04 国立研究開発法人産業技術総合研究所 タンデム型太陽電池、およびその製造方法
CN119300609A (zh) * 2024-09-29 2025-01-10 苏州大学 一种叠层太阳电池用复合层及其应用

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JP2018011058A (ja) 2016-07-13 2018-01-18 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池、これを含むタンデム太陽電池モジュール及びこの製造方法
WO2019048839A1 (en) 2017-09-07 2019-03-14 Oxford Photovoltaics Limited MULTI-JUNCTION PHOTOVOLTAIC DEVICE
JP2020508570A (ja) 2017-02-20 2020-03-19 オックスフォード フォトボルテイクス リミテッド 多接合光起電デバイス
CN113451434A (zh) 2020-03-27 2021-09-28 隆基绿能科技股份有限公司 叠层光伏器件及生产方法

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WO2019048839A1 (en) 2017-09-07 2019-03-14 Oxford Photovoltaics Limited MULTI-JUNCTION PHOTOVOLTAIC DEVICE
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JP2023531422A (ja) 2023-07-24
KR102917650B1 (ko) 2026-01-26
US12300446B2 (en) 2025-05-13
EP4169080A1 (en) 2023-04-26
CN115777150A (zh) 2023-03-10
KR20230038479A (ko) 2023-03-20
US20230223205A1 (en) 2023-07-13
WO2021255468A1 (en) 2021-12-23

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