JP7659926B2 - 積層構造体、圧電素子、電子デバイス、電子機器及びシステム - Google Patents

積層構造体、圧電素子、電子デバイス、電子機器及びシステム Download PDF

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Publication number
JP7659926B2
JP7659926B2 JP2023576970A JP2023576970A JP7659926B2 JP 7659926 B2 JP7659926 B2 JP 7659926B2 JP 2023576970 A JP2023576970 A JP 2023576970A JP 2023576970 A JP2023576970 A JP 2023576970A JP 7659926 B2 JP7659926 B2 JP 7659926B2
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Japan
Prior art keywords
film
epitaxial
laminated structure
substrate
epitaxial film
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JP2023576970A
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Japanese (ja)
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JPWO2023145807A1 (https=
Inventor
健 木島
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Gaianixx Inc
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Gaianixx Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2023576970A 2022-01-27 2023-01-26 積層構造体、圧電素子、電子デバイス、電子機器及びシステム Active JP7659926B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022011347 2022-01-27
JP2022011347 2022-01-27
JP2022138836 2022-08-31
JP2022138836 2022-08-31
PCT/JP2023/002398 WO2023145807A1 (ja) 2022-01-27 2023-01-26 電極、積層構造体、電子デバイス、電子機器及びこれらの製造方法

Publications (2)

Publication Number Publication Date
JPWO2023145807A1 JPWO2023145807A1 (https=) 2023-08-03
JP7659926B2 true JP7659926B2 (ja) 2025-04-10

Family

ID=87471531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023576970A Active JP7659926B2 (ja) 2022-01-27 2023-01-26 積層構造体、圧電素子、電子デバイス、電子機器及びシステム

Country Status (3)

Country Link
JP (1) JP7659926B2 (https=)
TW (1) TW202406178A (https=)
WO (1) WO2023145807A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006960A (ja) 2003-07-24 2004-01-08 Matsushita Electric Ind Co Ltd 誘電体膜の形成方法
WO2015064341A1 (ja) 2013-10-29 2015-05-07 コニカミノルタ株式会社 圧電素子、インクジェットヘッド、インクジェットプリンタおよび圧電素子の製造方法
JP2019216181A (ja) 2018-06-13 2019-12-19 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法
WO2020179210A1 (ja) 2019-03-07 2020-09-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体、圧電体膜及び超伝導体膜

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006960A (ja) 2003-07-24 2004-01-08 Matsushita Electric Ind Co Ltd 誘電体膜の形成方法
WO2015064341A1 (ja) 2013-10-29 2015-05-07 コニカミノルタ株式会社 圧電素子、インクジェットヘッド、インクジェットプリンタおよび圧電素子の製造方法
JP2019216181A (ja) 2018-06-13 2019-12-19 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法
WO2020179210A1 (ja) 2019-03-07 2020-09-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体、圧電体膜及び超伝導体膜

Also Published As

Publication number Publication date
JPWO2023145807A1 (https=) 2023-08-03
TW202406178A (zh) 2024-02-01
WO2023145807A1 (ja) 2023-08-03

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