JPWO2023145807A1 - - Google Patents

Info

Publication number
JPWO2023145807A1
JPWO2023145807A1 JP2023576970A JP2023576970A JPWO2023145807A1 JP WO2023145807 A1 JPWO2023145807 A1 JP WO2023145807A1 JP 2023576970 A JP2023576970 A JP 2023576970A JP 2023576970 A JP2023576970 A JP 2023576970A JP WO2023145807 A1 JPWO2023145807 A1 JP WO2023145807A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023576970A
Other languages
Japanese (ja)
Other versions
JP7659926B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023145807A1 publication Critical patent/JPWO2023145807A1/ja
Application granted granted Critical
Publication of JP7659926B2 publication Critical patent/JP7659926B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/50Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2023576970A 2022-01-27 2023-01-26 積層構造体、圧電素子、電子デバイス、電子機器及びシステム Active JP7659926B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022011347 2022-01-27
JP2022011347 2022-01-27
JP2022138836 2022-08-31
JP2022138836 2022-08-31
PCT/JP2023/002398 WO2023145807A1 (ja) 2022-01-27 2023-01-26 電極、積層構造体、電子デバイス、電子機器及びこれらの製造方法

Publications (2)

Publication Number Publication Date
JPWO2023145807A1 true JPWO2023145807A1 (https=) 2023-08-03
JP7659926B2 JP7659926B2 (ja) 2025-04-10

Family

ID=87471531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023576970A Active JP7659926B2 (ja) 2022-01-27 2023-01-26 積層構造体、圧電素子、電子デバイス、電子機器及びシステム

Country Status (3)

Country Link
JP (1) JP7659926B2 (https=)
TW (1) TW202406178A (https=)
WO (1) WO2023145807A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006960A (ja) * 2003-07-24 2004-01-08 Matsushita Electric Ind Co Ltd 誘電体膜の形成方法
WO2015064341A1 (ja) * 2013-10-29 2015-05-07 コニカミノルタ株式会社 圧電素子、インクジェットヘッド、インクジェットプリンタおよび圧電素子の製造方法
JP2019216181A (ja) * 2018-06-13 2019-12-19 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法
WO2020179210A1 (ja) * 2019-03-07 2020-09-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体、圧電体膜及び超伝導体膜

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006960A (ja) * 2003-07-24 2004-01-08 Matsushita Electric Ind Co Ltd 誘電体膜の形成方法
WO2015064341A1 (ja) * 2013-10-29 2015-05-07 コニカミノルタ株式会社 圧電素子、インクジェットヘッド、インクジェットプリンタおよび圧電素子の製造方法
JP2019216181A (ja) * 2018-06-13 2019-12-19 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法
WO2020179210A1 (ja) * 2019-03-07 2020-09-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体、圧電体膜及び超伝導体膜

Also Published As

Publication number Publication date
TW202406178A (zh) 2024-02-01
WO2023145807A1 (ja) 2023-08-03
JP7659926B2 (ja) 2025-04-10

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