TW202406178A - 電極、積層構造體、電子器件、電子裝置及此等的製造方法 - Google Patents

電極、積層構造體、電子器件、電子裝置及此等的製造方法 Download PDF

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Publication number
TW202406178A
TW202406178A TW112103075A TW112103075A TW202406178A TW 202406178 A TW202406178 A TW 202406178A TW 112103075 A TW112103075 A TW 112103075A TW 112103075 A TW112103075 A TW 112103075A TW 202406178 A TW202406178 A TW 202406178A
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TW
Taiwan
Prior art keywords
film
electrode
epitaxial
laminated structure
epitaxial film
Prior art date
Application number
TW112103075A
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English (en)
Chinese (zh)
Inventor
木島健
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日商蓋亞尼克斯股份有限公司
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Application filed by 日商蓋亞尼克斯股份有限公司 filed Critical 日商蓋亞尼克斯股份有限公司
Publication of TW202406178A publication Critical patent/TW202406178A/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
TW112103075A 2022-01-27 2023-01-30 電極、積層構造體、電子器件、電子裝置及此等的製造方法 TW202406178A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022-011347 2022-01-27
JP2022011347 2022-01-27
JP2022-138836 2022-08-31
JP2022138836 2022-08-31

Publications (1)

Publication Number Publication Date
TW202406178A true TW202406178A (zh) 2024-02-01

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ID=87471531

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Application Number Title Priority Date Filing Date
TW112103075A TW202406178A (zh) 2022-01-27 2023-01-30 電極、積層構造體、電子器件、電子裝置及此等的製造方法

Country Status (3)

Country Link
JP (1) JP7659926B2 (https=)
TW (1) TW202406178A (https=)
WO (1) WO2023145807A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006960A (ja) * 2003-07-24 2004-01-08 Matsushita Electric Ind Co Ltd 誘電体膜の形成方法
CN105659401B (zh) * 2013-10-29 2019-08-23 柯尼卡美能达株式会社 压电元件、喷墨头、喷墨打印机以及压电元件的制造方法
JP6498821B1 (ja) * 2018-06-13 2019-04-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法
WO2020179210A1 (ja) * 2019-03-07 2020-09-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体、圧電体膜及び超伝導体膜

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Publication number Publication date
JPWO2023145807A1 (https=) 2023-08-03
WO2023145807A1 (ja) 2023-08-03
JP7659926B2 (ja) 2025-04-10

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