JP7647655B2 - レジスト材料及びパターン形成方法 - Google Patents

レジスト材料及びパターン形成方法 Download PDF

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Publication number
JP7647655B2
JP7647655B2 JP2022062740A JP2022062740A JP7647655B2 JP 7647655 B2 JP7647655 B2 JP 7647655B2 JP 2022062740 A JP2022062740 A JP 2022062740A JP 2022062740 A JP2022062740 A JP 2022062740A JP 7647655 B2 JP7647655 B2 JP 7647655B2
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Japanese (ja)
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JP2022173075A5 (https=
JP2022173075A (ja
Inventor
潤 畠山
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2022062740A 2021-05-07 2022-04-05 レジスト材料及びパターン形成方法 Active JP7647655B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021078970 2021-05-07
JP2021078970 2021-05-07

Publications (3)

Publication Number Publication Date
JP2022173075A JP2022173075A (ja) 2022-11-17
JP2022173075A5 JP2022173075A5 (https=) 2023-01-27
JP7647655B2 true JP7647655B2 (ja) 2025-03-18

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JP2022062740A Active JP7647655B2 (ja) 2021-05-07 2022-04-05 レジスト材料及びパターン形成方法

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US (1) US12429771B2 (https=)
JP (1) JP7647655B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024157135A (ja) 2023-04-25 2024-11-07 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004109959A (ja) 2002-07-25 2004-04-08 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2014167628A (ja) 2014-03-24 2014-09-11 Fujifilm Corp パターン形成方法及びレジスト組成物
KR101491973B1 (ko) 2014-03-12 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브형 포토레지스트 조성물 및 이를 이용한 tft 레지스트 패턴 형성방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4070393B2 (ja) * 2000-01-17 2008-04-02 富士フイルム株式会社 ネガ型レジスト組成物
US6432609B1 (en) * 2000-07-21 2002-08-13 National Science Council Photoacid generators, photoresists containing the same, and method of undergoing a photoacid-catalyzed reaction in a resin system using the same
JP3693623B2 (ja) * 2001-06-22 2005-09-07 松下電器産業株式会社 パターン形成方法
JP5808902B2 (ja) 2009-11-10 2015-11-10 住友化学株式会社 塩及びレジスト組成物
JP5891993B2 (ja) 2011-08-08 2016-03-23 住友化学株式会社 塩、レジスト組成物及びレジストパターンの製造方法
JP5836230B2 (ja) * 2011-09-15 2015-12-24 富士フイルム株式会社 パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及び、レジスト膜、並びに、これらを用いた電子デバイスの製造方法
US10295904B2 (en) * 2016-06-07 2019-05-21 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
KR101960596B1 (ko) * 2016-06-28 2019-07-15 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
JP6973279B2 (ja) * 2017-06-14 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7091875B2 (ja) * 2017-07-20 2022-06-28 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7139190B2 (ja) 2017-09-15 2022-09-20 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7406319B2 (ja) 2018-07-17 2023-12-27 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP7449064B2 (ja) * 2018-10-16 2024-03-13 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004109959A (ja) 2002-07-25 2004-04-08 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
KR101491973B1 (ko) 2014-03-12 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브형 포토레지스트 조성물 및 이를 이용한 tft 레지스트 패턴 형성방법
JP2014167628A (ja) 2014-03-24 2014-09-11 Fujifilm Corp パターン形成方法及びレジスト組成物

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US12429771B2 (en) 2025-09-30
JP2022173075A (ja) 2022-11-17
US20220390846A1 (en) 2022-12-08

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