JP7541342B2 - 窒化物圧電体およびそれを用いたmemsデバイス - Google Patents
窒化物圧電体およびそれを用いたmemsデバイス Download PDFInfo
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- JP7541342B2 JP7541342B2 JP2020212574A JP2020212574A JP7541342B2 JP 7541342 B2 JP7541342 B2 JP 7541342B2 JP 2020212574 A JP2020212574 A JP 2020212574A JP 2020212574 A JP2020212574 A JP 2020212574A JP 7541342 B2 JP7541342 B2 JP 7541342B2
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- doped
- aln
- piezoelectric
- nitride
- transition metal
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- 150000004767 nitrides Chemical class 0.000 title claims description 39
- 239000000463 material Substances 0.000 title claims description 18
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052758 niobium Inorganic materials 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 9
- 229910052702 rhenium Inorganic materials 0.000 claims description 6
- 229910052713 technetium Inorganic materials 0.000 claims description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052762 osmium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910002441 CoNi Inorganic materials 0.000 claims description 2
- 229910002546 FeCo Inorganic materials 0.000 claims description 2
- 229910003322 NiCu Inorganic materials 0.000 claims description 2
- 229910021124 PdAg Inorganic materials 0.000 claims description 2
- 229910018949 PtAu Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 110
- 229910052723 transition metal Inorganic materials 0.000 description 56
- 239000010955 niobium Substances 0.000 description 18
- 239000011777 magnesium Substances 0.000 description 17
- 125000004429 atom Chemical group 0.000 description 16
- 238000004364 calculation method Methods 0.000 description 15
- 229910052749 magnesium Inorganic materials 0.000 description 14
- 238000004088 simulation Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 229910052706 scandium Inorganic materials 0.000 description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910004162 TaHf Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Micromachines (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
(実施形態1)
<遷移金属元素の選択方法>
<本実施形態における窒化物圧電体>
(実施形態2)
(他の実施形態)
Claims (7)
- 化学式Al 0.875 Hf 0.0625 M 0.0625 Nで表され、結晶構造がウルツ鉱型結晶構造であることを特徴とする窒化物圧電体。
(Mは、V、Cr、Mn、Fe、Co、Ni、Cu、Nb、Mo、Tc、Ru、Rh、Ag、Ta、W、Re、Os、Ir、PtおよびAuの何れか1つを示す。) - 前記Mの平均Born有効電荷が、1.4~3.2の範囲にあることを特徴とする請求項1に記載の窒化物圧電体。
- 化学式Al 0.875 M1 0.0625 M2 0.0625 Nで表され、結晶構造がウルツ鉱型結晶構造であることを特徴とする窒化物圧電体。
(M1およびM2の組合せは、TaIr、TaPt、TaAu、TiV、VCr、MnFe、FeCo、CoNi、NiCu、ZrNb、NbMo、RuRh、RhPd、PdAg、OsIr、IrPtおよびPtAuの何れか1つを示す。) - 前記M1および前記M2の平均Born有効電荷が、1.4~3.2の範囲にあることを特徴とする請求項3に記載の窒化物圧電体。
- 化学式Al 0.8125 M1 0.0625 M2 0.0625 M3 0.0625 Nで表され、結晶構造がウルツ鉱型結晶構造であることを特徴とする窒化物圧電体。
(M1、M2およびM3の組合せが、TiVCr、MnFeCo、NiCuZr、HfTaAgおよびHfTaWの何れか1つである。) - 前記M1、前記M2および前記M3の平均Born有効電荷が、1.4~3.2の範囲にあることを特徴とする請求項5に記載の窒化物圧電体。
- 請求項1~6の何れか1項に記載の窒化物圧電体を用いたMEMSデバイス。
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JP2020025864 | 2020-02-19 | ||
JP2020025864 | 2020-02-19 |
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JP2021132199A JP2021132199A (ja) | 2021-09-09 |
JP7541342B2 true JP7541342B2 (ja) | 2024-08-28 |
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CN115108537B (zh) * | 2022-07-10 | 2023-09-19 | 湖南大学 | 一种氮化铝粉体及其制备方法和包括氮化铝粉体的覆铜板 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130046111A1 (en) | 2007-07-31 | 2013-02-21 | Mikhail Bobylev | Method for the Hydrolysis of Substituted Formylamines into Substituted Amines |
JP2013046111A (ja) | 2011-08-22 | 2013-03-04 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2019201400A (ja) | 2018-05-17 | 2019-11-21 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | バルク音響共振器及びその製造方法 |
US20190372555A1 (en) | 2018-06-01 | 2019-12-05 | Akoustis, Inc. | Effective coupling coefficients for strained single crystal epitaxial film bulk acoustic resonators |
WO2020127514A1 (en) | 2018-12-21 | 2020-06-25 | RF360 Europe GmbH | Piezoelectric material and piezoelectric device |
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2020
- 2020-12-22 JP JP2020212574A patent/JP7541342B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130046111A1 (en) | 2007-07-31 | 2013-02-21 | Mikhail Bobylev | Method for the Hydrolysis of Substituted Formylamines into Substituted Amines |
JP2013046111A (ja) | 2011-08-22 | 2013-03-04 | Taiyo Yuden Co Ltd | 弾性波デバイス |
JP2019201400A (ja) | 2018-05-17 | 2019-11-21 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | バルク音響共振器及びその製造方法 |
US20190372555A1 (en) | 2018-06-01 | 2019-12-05 | Akoustis, Inc. | Effective coupling coefficients for strained single crystal epitaxial film bulk acoustic resonators |
WO2020127514A1 (en) | 2018-12-21 | 2020-06-25 | RF360 Europe GmbH | Piezoelectric material and piezoelectric device |
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