JP7527853B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

Info

Publication number
JP7527853B2
JP7527853B2 JP2020101617A JP2020101617A JP7527853B2 JP 7527853 B2 JP7527853 B2 JP 7527853B2 JP 2020101617 A JP2020101617 A JP 2020101617A JP 2020101617 A JP2020101617 A JP 2020101617A JP 7527853 B2 JP7527853 B2 JP 7527853B2
Authority
JP
Japan
Prior art keywords
count number
photoelectric conversion
signal
avalanche photodiode
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020101617A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021197596A5 (https=
JP2021197596A (ja
Inventor
和男 山崎
享裕 黒田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2020101617A priority Critical patent/JP7527853B2/ja
Priority to US17/338,065 priority patent/US11846542B2/en
Publication of JP2021197596A publication Critical patent/JP2021197596A/ja
Publication of JP2021197596A5 publication Critical patent/JP2021197596A5/ja
Application granted granted Critical
Publication of JP7527853B2 publication Critical patent/JP7527853B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4413—Type
    • G01J2001/442—Single-photon detection or photon counting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2020101617A 2020-06-11 2020-06-11 光電変換装置 Active JP7527853B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020101617A JP7527853B2 (ja) 2020-06-11 2020-06-11 光電変換装置
US17/338,065 US11846542B2 (en) 2020-06-11 2021-06-03 Photoelectric conversion apparatus using avalanche photodiodes with different sensitivity to light

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020101617A JP7527853B2 (ja) 2020-06-11 2020-06-11 光電変換装置

Publications (3)

Publication Number Publication Date
JP2021197596A JP2021197596A (ja) 2021-12-27
JP2021197596A5 JP2021197596A5 (https=) 2023-06-19
JP7527853B2 true JP7527853B2 (ja) 2024-08-05

Family

ID=78825309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020101617A Active JP7527853B2 (ja) 2020-06-11 2020-06-11 光電変換装置

Country Status (2)

Country Link
US (1) US11846542B2 (https=)
JP (1) JP7527853B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7757107B2 (ja) * 2021-09-24 2025-10-21 キヤノン株式会社 光電変換装置、撮像装置、制御方法、及びコンピュータプログラム
JP7760305B2 (ja) * 2021-09-24 2025-10-27 キヤノン株式会社 光電変換装置、撮像装置、制御方法、及びコンピュータプログラム
JP2023159648A (ja) * 2022-04-20 2023-11-01 キヤノン株式会社 光電変換装置および光電変換システム
JP2023173218A (ja) * 2022-05-25 2023-12-07 キヤノン株式会社 光電変換装置及び光検出システム
JP7756050B2 (ja) * 2022-06-10 2025-10-17 Ａｓｔｅｍｏ株式会社 撮像装置、および、撮像方法
CN116055912B (zh) * 2022-11-28 2024-03-12 中国电子科技集团公司第四十四研究所 多功能可重构单光子雪崩焦平面读出电路
JP2024162492A (ja) * 2023-05-10 2024-11-21 キヤノン株式会社 光電変換装置、機器および移動体
JP2025034789A (ja) * 2023-08-31 2025-03-13 キヤノン株式会社 光電変換装置及びその駆動方法
JP2025058571A (ja) * 2023-09-28 2025-04-09 キヤノン株式会社 光電変換装置、移動体、処理方法、及びコンピュータプログラム
WO2025205981A1 (ja) * 2024-03-26 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017169754A1 (ja) 2016-03-29 2017-10-05 ソニー株式会社 固体撮像装置、及び電子機器
US20170324917A1 (en) 2016-05-03 2017-11-09 Semiconductor Components Industries, Llc Dual-photodiode image pixel
US20180301484A1 (en) 2017-04-17 2018-10-18 Semiconductor Components Industries, Llc Image sensors with high dynamic range and autofocusing hexagonal pixels
WO2019050146A1 (ko) 2017-09-07 2019-03-14 에스케이텔레콤 주식회사 광자 검출 장치 및 광자 검출 방법
JP2019047486A (ja) 2017-08-31 2019-03-22 キヤノン株式会社 固体撮像素子及び撮像装置
JP2019049531A (ja) 2017-07-11 2019-03-28 フォンダッツィオーネ ブルーノ ケスラーＦｏｎｄａｚｉｏｎｅ Ｂｒｕｎｏ Ｋｅｓｓｌｅｒ 距離を計測するための装置及び前記距離を計測するための方法
JP2019140537A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
JP2019165286A (ja) 2018-03-19 2019-09-26 キヤノン株式会社 光電変換装置及び撮像システム
JP2019190892A (ja) 2018-04-20 2019-10-31 ソニーセミコンダクタソリューションズ株式会社 受光装置及び測距装置
JP2020088520A (ja) 2018-11-21 2020-06-04 キヤノン株式会社 光電変換装置及び撮像システム
JP2021093583A (ja) 2019-12-09 2021-06-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5521721B2 (ja) 2009-08-28 2014-06-18 ソニー株式会社 撮像素子およびカメラシステム
US8653435B2 (en) * 2010-09-06 2014-02-18 King Abdulaziz City Science And Technology Time-delay integration imaging method and apparatus using a high-speed in-pixel analog photon counter
US9299732B2 (en) 2013-10-28 2016-03-29 Omnivision Technologies, Inc. Stacked chip SPAD image sensor
US9613994B2 (en) 2014-07-16 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitance device in a stacked scheme and methods of forming the same
LU92665B1 (de) 2015-02-24 2016-08-25 Leica Microsystems Verfahren zur verbesserung des dynamikbereichs einer vorrichtung zum detektieren von licht
US10014340B2 (en) 2015-12-28 2018-07-03 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked SPAD image sensor
CN112788224B (zh) * 2016-01-29 2023-04-04 松下知识产权经营株式会社 摄像装置
JP7055544B2 (ja) 2016-11-29 2022-04-18 ソニーセミコンダクタソリューションズ株式会社 センサチップおよび電子機器
JP6929671B2 (ja) * 2017-03-17 2021-09-01 キヤノン株式会社 撮像装置及び撮像システム
WO2018186195A1 (ja) 2017-04-04 2018-10-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び電子機器
EP3451655B1 (en) * 2017-08-31 2020-10-21 Canon Kabushiki Kaisha Solid-state image sensor and image capture apparatus
JP2019075394A (ja) * 2017-10-12 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、電子装置
JP6954086B2 (ja) 2017-12-19 2021-10-27 セイコーエプソン株式会社 液体収容体
EP3503534B1 (en) 2017-12-20 2021-08-18 Canon Kabushiki Kaisha Solid-state image sensor, image capturing apparatus, and image capturing method
JP2019140137A (ja) 2018-02-06 2019-08-22 株式会社豊田中央研究所 光検出器
US11089251B2 (en) * 2018-07-12 2021-08-10 Canon Kabushiki Kaisha Image sensor and image capturing apparatus
JP7170448B2 (ja) * 2018-07-25 2022-11-14 キヤノン株式会社 撮像素子、撮像装置及び信号処理方法
JP7114396B2 (ja) * 2018-08-03 2022-08-08 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7395300B2 (ja) * 2019-03-22 2023-12-11 キヤノン株式会社 光電変換装置、光電変換システム、および移動体

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017169754A1 (ja) 2016-03-29 2017-10-05 ソニー株式会社 固体撮像装置、及び電子機器
US20170324917A1 (en) 2016-05-03 2017-11-09 Semiconductor Components Industries, Llc Dual-photodiode image pixel
US20180301484A1 (en) 2017-04-17 2018-10-18 Semiconductor Components Industries, Llc Image sensors with high dynamic range and autofocusing hexagonal pixels
JP2019049531A (ja) 2017-07-11 2019-03-28 フォンダッツィオーネ ブルーノ ケスラーＦｏｎｄａｚｉｏｎｅ Ｂｒｕｎｏ Ｋｅｓｓｌｅｒ 距離を計測するための装置及び前記距離を計測するための方法
JP2019047486A (ja) 2017-08-31 2019-03-22 キヤノン株式会社 固体撮像素子及び撮像装置
WO2019050146A1 (ko) 2017-09-07 2019-03-14 에스케이텔레콤 주식회사 광자 검출 장치 및 광자 검출 방법
JP2019140537A (ja) 2018-02-09 2019-08-22 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
JP2019165286A (ja) 2018-03-19 2019-09-26 キヤノン株式会社 光電変換装置及び撮像システム
JP2019190892A (ja) 2018-04-20 2019-10-31 ソニーセミコンダクタソリューションズ株式会社 受光装置及び測距装置
JP2020088520A (ja) 2018-11-21 2020-06-04 キヤノン株式会社 光電変換装置及び撮像システム
JP2021093583A (ja) 2019-12-09 2021-06-17 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法

Also Published As

Publication number Publication date
US11846542B2 (en) 2023-12-19
JP2021197596A (ja) 2021-12-27
US20210389176A1 (en) 2021-12-16

Similar Documents

Publication Publication Date Title
JP7527853B2 (ja) 光電変換装置
US11309440B2 (en) Imaging device and imaging system
US11792548B2 (en) Photoelectric conversion device, photoelectric conversion system, and moving body
US11411028B2 (en) Photoelectric conversion apparatus, photoelectric conversion system, and moving object
US10978503B2 (en) Light detection apparatus, photoelectric conversion system, and movable body
US10818724B2 (en) Photoelectric conversion device and imaging system
US11196948B2 (en) Photo-detection device and imaging system
US11024752B2 (en) Photoelectric conversion device and imaging system having stacked structure and avalanche amplification-type diode
JP7604204B2 (ja) 光電変換装置、撮像システム、移動体
US20230069364A1 (en) Photoelectric conversion apparatus having capacitance addition transistor, photoelectric conversion system, and movable body
US20250221065A1 (en) Photoelectric conversion device
US11818488B2 (en) Photoelectric conversion device, photoelectric conversion system, and moving body
CN117374091A (zh) 半导体器件和单光子雪崩二极管像素
JP7438730B2 (ja) 光電変換装置、撮像システム及び移動体
US20230387173A1 (en) Photoelectric conversion device having expanded dynamic range and transfer electrodes
CN115148752B (zh) 光电转换设备
US11575822B2 (en) Photoelectric conversion apparatus, photoelectric conversion system, and moving body
US20250220323A1 (en) Solid-state imaging device

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20200727

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230609

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230609

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20231213

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20240215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240502

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240625

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240724

R150 Certificate of patent or registration of utility model

Ref document number: 7527853

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150