JP7504625B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

Info

Publication number
JP7504625B2
JP7504625B2 JP2020033819A JP2020033819A JP7504625B2 JP 7504625 B2 JP7504625 B2 JP 7504625B2 JP 2020033819 A JP2020033819 A JP 2020033819A JP 2020033819 A JP2020033819 A JP 2020033819A JP 7504625 B2 JP7504625 B2 JP 7504625B2
Authority
JP
Japan
Prior art keywords
signal
photoelectric conversion
analog
digital
conversion unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020033819A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021136667A (ja
JP2021136667A5 (enExample
Inventor
恒一 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2020033819A priority Critical patent/JP7504625B2/ja
Priority to US17/180,563 priority patent/US11678086B2/en
Priority to CN202110219472.6A priority patent/CN113329214B/zh
Publication of JP2021136667A publication Critical patent/JP2021136667A/ja
Publication of JP2021136667A5 publication Critical patent/JP2021136667A5/ja
Priority to US18/311,682 priority patent/US11962925B2/en
Application granted granted Critical
Publication of JP7504625B2 publication Critical patent/JP7504625B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80Camera processing pipelines; Components thereof
    • H04N23/84Camera processing pipelines; Components thereof for processing colour signals
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/581Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/59Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/79Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2020033819A 2020-02-28 2020-02-28 光電変換装置 Active JP7504625B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020033819A JP7504625B2 (ja) 2020-02-28 2020-02-28 光電変換装置
US17/180,563 US11678086B2 (en) 2020-02-28 2021-02-19 Photoelectric conversion apparatus having analog-to-digital conversion based on signal charge, image capturing system, and moving body
CN202110219472.6A CN113329214B (zh) 2020-02-28 2021-02-26 光电转换装置、图像捕获系统和移动体
US18/311,682 US11962925B2 (en) 2020-02-28 2023-05-03 Photoelectric conversion apparatus having analog-to-digital conversion based on signal charge, image capturing system, and moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020033819A JP7504625B2 (ja) 2020-02-28 2020-02-28 光電変換装置

Publications (3)

Publication Number Publication Date
JP2021136667A JP2021136667A (ja) 2021-09-13
JP2021136667A5 JP2021136667A5 (enExample) 2023-03-01
JP7504625B2 true JP7504625B2 (ja) 2024-06-24

Family

ID=77414477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020033819A Active JP7504625B2 (ja) 2020-02-28 2020-02-28 光電変換装置

Country Status (3)

Country Link
US (2) US11678086B2 (enExample)
JP (1) JP7504625B2 (enExample)
CN (1) CN113329214B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220169822A (ko) 2021-06-21 2022-12-28 삼성전자주식회사 픽셀, 및 이를 포함하는 이미지 센서
JP7757098B2 (ja) * 2021-09-15 2025-10-21 キヤノン株式会社 光電変換装置及びその駆動方法
US12022221B2 (en) * 2021-11-25 2024-06-25 Samsung Electronics Co., Ltd. Image sensor
JP2024020760A (ja) 2022-08-02 2024-02-15 キヤノン株式会社 光電変換装置、光電変換装置の駆動方法、機器
JP2024160853A (ja) * 2023-05-02 2024-11-15 キヤノン株式会社 光電変換装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267543A (ja) 2000-03-21 2001-09-28 Sony Corp 固体撮像素子およびこれを用いたカメラシステム
JP2007329721A (ja) 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2013211832A (ja) 2012-03-01 2013-10-10 Canon Inc 撮像装置、撮像システム、撮像装置の駆動方法
JP2014075767A (ja) 2012-10-05 2014-04-24 Canon Inc 固体撮像装置
WO2017018215A1 (ja) 2015-07-27 2017-02-02 ソニー株式会社 固体撮像装置およびその制御方法、並びに電子機器
WO2017138370A1 (ja) 2016-02-09 2017-08-17 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US20170324917A1 (en) 2016-05-03 2017-11-09 Semiconductor Components Industries, Llc Dual-photodiode image pixel
JP2019062398A (ja) 2017-09-26 2019-04-18 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070035649A1 (en) * 2005-08-10 2007-02-15 Micron Technology, Inc. Image pixel reset through dual conversion gain gate
JP2009159069A (ja) * 2007-12-25 2009-07-16 Panasonic Corp 固体撮像装置およびカメラ
JP5347341B2 (ja) * 2008-06-06 2013-11-20 ソニー株式会社 固体撮像装置、撮像装置、電子機器、ad変換装置、ad変換方法
JP4499819B2 (ja) 2009-04-23 2010-07-07 国立大学法人東北大学 固体撮像装置
JP5516960B2 (ja) * 2010-04-02 2014-06-11 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
JP5865272B2 (ja) * 2012-03-30 2016-02-17 キヤノン株式会社 光電変換装置および撮像システム
WO2015115224A1 (ja) * 2014-02-03 2015-08-06 オリンパス株式会社 固体撮像装置および撮像システム
JP2015162751A (ja) * 2014-02-26 2015-09-07 キヤノン株式会社 光電変換装置および撮像システム
JP6735582B2 (ja) * 2016-03-17 2020-08-05 キヤノン株式会社 撮像素子およびその駆動方法、および撮像装置
CN108419030B (zh) * 2018-03-01 2021-04-20 思特威(上海)电子科技股份有限公司 具有led闪烁衰减的hdr图像传感器像素结构及成像系统

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267543A (ja) 2000-03-21 2001-09-28 Sony Corp 固体撮像素子およびこれを用いたカメラシステム
JP2007329721A (ja) 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2013211832A (ja) 2012-03-01 2013-10-10 Canon Inc 撮像装置、撮像システム、撮像装置の駆動方法
JP2014075767A (ja) 2012-10-05 2014-04-24 Canon Inc 固体撮像装置
WO2017018215A1 (ja) 2015-07-27 2017-02-02 ソニー株式会社 固体撮像装置およびその制御方法、並びに電子機器
WO2017138370A1 (ja) 2016-02-09 2017-08-17 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US20170324917A1 (en) 2016-05-03 2017-11-09 Semiconductor Components Industries, Llc Dual-photodiode image pixel
JP2019062398A (ja) 2017-09-26 2019-04-18 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Manuel Innocent, et al.,"Pixel with nested photo diodes and 120 db single exposure dynamic range",International Image Sensor Workshop,2019年06月,pp.95-98

Also Published As

Publication number Publication date
US20230276145A1 (en) 2023-08-31
US11962925B2 (en) 2024-04-16
CN113329214A (zh) 2021-08-31
JP2021136667A (ja) 2021-09-13
US20210274119A1 (en) 2021-09-02
CN113329214B (zh) 2024-09-06
US11678086B2 (en) 2023-06-13

Similar Documents

Publication Publication Date Title
JP7504625B2 (ja) 光電変換装置
US11496704B2 (en) Photoelectric conversion device having select circuit with a switch circuit having a plurality of switches, and imaging system
US11115608B2 (en) Imaging device, imaging system, and drive method of imaging device
US11653114B2 (en) Photoelectric conversion device and imaging system
US10645316B2 (en) Imaging device and method of driving imaging device
JP2019057873A (ja) 固体撮像素子及び電子機器
US10992886B2 (en) Solid state imaging device, imaging system, and drive method of solid state imaging device
JP6784609B2 (ja) 光電変換装置、撮像システム及び移動体
US10944931B2 (en) Solid state imaging device and imaging system
EP2770731A1 (en) Image pickup device and camera system
JP7755407B2 (ja) 光電変換装置
US11575868B2 (en) Photoelectric conversion apparatus, method of driving photoelectric conversion apparatus, photoelectric conversion system, and moving body
JP7562371B2 (ja) ランプ信号出力回路、光電変換装置、撮像システム
US20230307483A1 (en) Photoelectric conversion device
JP7655742B2 (ja) 比較器、光電変換装置、および機器
US20250150734A1 (en) Imaging device
JP2024090479A (ja) 光電変換装置
JP7490708B2 (ja) 光電変換装置
US20250338032A1 (en) Photoelectric conversion device
US20230179881A1 (en) Photoelectric conversion device
KR20250089426A (ko) 광전 변환장치 및 기기
JP2024097946A (ja) 光電変換装置

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20200324

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230220

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230220

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20231031

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231114

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20231213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240105

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240319

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240412

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240514

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240612