CN113329214B - 光电转换装置、图像捕获系统和移动体 - Google Patents

光电转换装置、图像捕获系统和移动体 Download PDF

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Publication number
CN113329214B
CN113329214B CN202110219472.6A CN202110219472A CN113329214B CN 113329214 B CN113329214 B CN 113329214B CN 202110219472 A CN202110219472 A CN 202110219472A CN 113329214 B CN113329214 B CN 113329214B
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signal
photoelectric conversion
conversion
analog
period
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Chinese (zh)
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CN113329214A (zh
Inventor
中村恒一
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202110219472.6A 2020-02-28 2021-02-26 光电转换装置、图像捕获系统和移动体 Active CN113329214B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-033819 2020-02-28
JP2020033819A JP7504625B2 (ja) 2020-02-28 2020-02-28 光電変換装置

Publications (2)

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CN113329214A CN113329214A (zh) 2021-08-31
CN113329214B true CN113329214B (zh) 2024-09-06

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US (2) US11678086B2 (enExample)
JP (1) JP7504625B2 (enExample)
CN (1) CN113329214B (enExample)

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KR20220169822A (ko) 2021-06-21 2022-12-28 삼성전자주식회사 픽셀, 및 이를 포함하는 이미지 센서
JP7757098B2 (ja) * 2021-09-15 2025-10-21 キヤノン株式会社 光電変換装置及びその駆動方法
US12022221B2 (en) * 2021-11-25 2024-06-25 Samsung Electronics Co., Ltd. Image sensor
JP2024020760A (ja) 2022-08-02 2024-02-15 キヤノン株式会社 光電変換装置、光電変換装置の駆動方法、機器
JP2024160853A (ja) * 2023-05-02 2024-11-15 キヤノン株式会社 光電変換装置

Citations (3)

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US7777170B2 (en) * 2007-12-25 2010-08-17 Panasonic Corporation Solid-state imaging device and camera
JP2013211832A (ja) * 2012-03-01 2013-10-10 Canon Inc 撮像装置、撮像システム、撮像装置の駆動方法
JP2014075767A (ja) * 2012-10-05 2014-04-24 Canon Inc 固体撮像装置

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JP4556273B2 (ja) * 2000-03-21 2010-10-06 ソニー株式会社 固体撮像素子およびこれを用いたカメラシステム
US20070035649A1 (en) * 2005-08-10 2007-02-15 Micron Technology, Inc. Image pixel reset through dual conversion gain gate
JP2007329721A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 固体撮像装置
JP5347341B2 (ja) * 2008-06-06 2013-11-20 ソニー株式会社 固体撮像装置、撮像装置、電子機器、ａｄ変換装置、ａｄ変換方法
JP4499819B2 (ja) 2009-04-23 2010-07-07 国立大学法人東北大学 固体撮像装置
JP5516960B2 (ja) * 2010-04-02 2014-06-11 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
JP5865272B2 (ja) * 2012-03-30 2016-02-17 キヤノン株式会社 光電変換装置および撮像システム
WO2015115224A1 (ja) * 2014-02-03 2015-08-06 オリンパス株式会社 固体撮像装置および撮像システム
JP2015162751A (ja) * 2014-02-26 2015-09-07 キヤノン株式会社 光電変換装置および撮像システム
TWI704811B (zh) * 2015-07-27 2020-09-11 日商新力股份有限公司 固體攝像裝置及其控制方法、以及電子機器
JP7062955B2 (ja) * 2016-02-09 2022-05-09 ソニーグループ株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6735582B2 (ja) * 2016-03-17 2020-08-05 キヤノン株式会社 撮像素子およびその駆動方法、および撮像装置
US10110839B2 (en) * 2016-05-03 2018-10-23 Semiconductor Components Industries, Llc Dual-photodiode image pixel
JP6995549B2 (ja) * 2017-09-26 2022-01-14 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
CN108419030B (zh) * 2018-03-01 2021-04-20 思特威(上海)电子科技股份有限公司 具有led闪烁衰减的hdr图像传感器像素结构及成像系统

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US7777170B2 (en) * 2007-12-25 2010-08-17 Panasonic Corporation Solid-state imaging device and camera
JP2013211832A (ja) * 2012-03-01 2013-10-10 Canon Inc 撮像装置、撮像システム、撮像装置の駆動方法
JP2014075767A (ja) * 2012-10-05 2014-04-24 Canon Inc 固体撮像装置

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Also Published As

Publication number Publication date
US20230276145A1 (en) 2023-08-31
US11962925B2 (en) 2024-04-16
JP7504625B2 (ja) 2024-06-24
CN113329214A (zh) 2021-08-31
JP2021136667A (ja) 2021-09-13
US20210274119A1 (en) 2021-09-02
US11678086B2 (en) 2023-06-13

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