JP7497210B2 - Mounting member, inspection device and processing device - Google Patents

Description

This disclosure relates to a mounting member, an inspection device, and a processing device.

Conventionally, suction members such as vacuum chucks have been used to inspect or process silicon wafers.

As such an adsorption member, the applicant has proposed, for example, in Patent Document 1, a vacuum adsorption member that includes a plurality of adsorption sections each containing a porous material and an isolation section provided between the plurality of adsorption sections, and the isolation section is joined to the plurality of adsorption sections by particles contained in the isolation section entering the holes of the plurality of adsorption sections.

The document also describes that the vacuum suction member has a support portion that supports the suction portion, and that this support portion is preferably made of dense ceramics whose main component is alumina.

JP 2010-274378 A

When an object to be attracted, such as a silicon wafer, is attracted and held by the suction part of the suction member described in Patent Document 1 and an inspection is performed by irradiating the surface of the object with high-intensity white light, both the object to be attracted and the supporting part appear white on the outer periphery of the surface. This causes the outline of the object to be attracted to become blurred, leading to a problem of the outline being misrecognized.

The present invention provides a mounting member that can prevent erroneous recognition of the contour of an object to be attached by reducing the diffuse reflectance, and an inspection device and a processing device that are equipped with this mounting member.

The mounting member of the present disclosure is a mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less.

The inspection device disclosed herein is equipped with the above-described mounting member.

The processing device disclosed herein is equipped with the above-described mounting member.

The mounting member disclosed herein can prevent erroneous recognition of the contour of the object to be attached.

FIG. 2 is a perspective view showing an example of a mounting member according to the present disclosure. 2A and 2B show an example of an object to be attached placed on the mounting member of FIG. 1, where FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along line A-A' in FIG. FIG. 11 is a perspective view showing another example of a mounting member according to the present disclosure. 4A and 4B show an example of an object to be attached placed on the mounting member of FIG. 3, where FIG. 4A is a plan view and FIG. 4B is a cross-sectional view taken along line B-B' in FIG. 2 is a graph showing the reflectance of the annular surface of the mounting member shown in FIG. 1 . 2 is a schematic diagram showing an example of an inspection device according to the present disclosure that includes the mounting member shown in FIG. 1 .

The following describes in detail an embodiment of the present invention with reference to the drawings.

Figure 1 is a perspective view showing an example of a mounting member of the present disclosure. Figure 2 shows an example of an object to be attached placed on the mounting member of Figure 1, where (a) is a plan view and (b) is a cross-sectional view taken along line A-A' in (a).

The mounting member 1 shown in Figures 1 and 2 is a member that adsorbs and holds an adsorbed object W, such as a semiconductor wafer or a glass substrate, and is equipped with an adsorption portion 2 having an adsorption surface 2a for adsorbing and holding the adsorbed object W, and a support portion 3 having an annular surface 3a that surrounds the adsorption surface 2a.

The adsorption part 2 is made of porous ceramics, and the support part 3 is made of dense ceramics.

The support part 3 has a band-shaped part 3b on the bottom side in the circumferential direction, and mounting holes 3c are provided at equal intervals along the circumferential direction in the band-shaped part 3b, and is connected and fixed to a fixed base (not shown) via bolts (not shown) or the like.

The support part 3 has an air passage 3d located in the thickness direction and suction grooves 3e in which the air passage 3d opens concentrically or in a grid pattern on the suction part 2 side. A suction means (not shown) such as a vacuum pump is connected to the air passage 3d and sucks the object to be adsorbed placed on the adsorption surface 2a, and the object is adsorbed and held. The annular surface 3a is flush with the adsorption surface 2a, and the outer periphery of a silicon wafer W with a diameter of, for example, 300 mm abuts against the inner periphery of the annular surface 3a.

The porosity of the porous ceramic is, for example, 28% by volume or more and 38% by volume or less. If the porosity of the porous ceramic is 28% by volume or more, the air flow resistance of the entire porous ceramic is low, so the adsorption part 2 can fix the adsorbate W with low suction force. Furthermore, if the porosity of the porous ceramic is 38% by volume or less, the heat dissipation characteristics of the entire porous ceramic are high, so it can be applied to adsorbates W that require rapid heat dissipation.

Here, the porosity of the adsorption portion 2 can be determined according to the mercury intrusion method in accordance with JIS R 1655-2003.

On the other hand, the relative density of dense ceramics is 98% or more.

This relative density is the percentage of the apparent density of the support part 3 relative to the theoretical density of the ceramic. To determine the theoretical density of the ceramic, first, a part of the support part 3 is crushed, and the resulting powder is dissolved in a solution such as hydrochloric acid, and then the content of the metal component is determined by an ICP (Inductively Coupled Plasma) emission spectroscopic analyzer (for example, ICPS-8100 manufactured by Shimadzu Corporation). Each component constituting the support part 3 is identified by an X-ray diffraction device using CuKα rays. If the identified component is Al ₂ O ₃ , it is converted to Al ₂ O ₃ using the content value of Al determined by the ICP (Inductively Coupled Plasma) emission spectroscopic analyzer. If the identified components are MnO and Co ₃ O ₄ , they may be converted to MnO and Co ₃ O ₄ , respectively, by the same method. The apparent density of the support part 3 may be determined in accordance with JIS R 1634-1998.

When the main component constituting the ceramic is aluminum oxide and the other components are manganese oxide and cobalt oxide, and the contents are a mass %, b mass %, and c mass %, respectively, the theoretical density of each component (aluminum oxide = 3.99 g/cm ³ , manganese oxide = 5.03 g/cm ³ , and cobalt oxide = 6.11 g/cm ³ ) can be used to calculate the theoretical density (T.D) of the ceramic according to the following formula (1): T.D = 1/(0.01 x (a/3.99 + b/5.03 + c/6.11)) ... (1)

For example, when the contents of the components constituting the ceramic are 94.7% by mass of aluminum oxide, 4% by mass of manganese oxide, and 1.3% by mass of cobalt oxide, the theoretical density (T.D.) of the ceramic is 4.04 g/ ^cm3 when calculated using formula (1), and the relative density can be obtained by dividing the apparent density of the ceramic obtained in accordance with JIS R 1634-1998 by this theoretical density (T.D.) of 4.04 g/ ^cm3 .

The adsorption portion 2 is joined to the support portion 3 by glass, and the components of the glass include silicon oxide, aluminum oxide, and calcium oxide, for example, silicon oxide is 50% by mass to 60% by mass, aluminum oxide is 10% by mass to 20% by mass, and calcium oxide is 10% by mass to 20% by mass.

Figure 3 is a perspective view showing another example of the mounting member of the present disclosure. Figure 4 shows an example of an object to be attached placed on the mounting member of Figure 3, where (a) is a plan view and (b) is a cross-sectional view taken along line B-B' in (a).

The mounting member 10 shown in Figures 3 and 4 is provided with an annular partition 4 having a dividing surface 4a that divides the suction surface 2a in the radial direction, and the annular partition 4 and the support portion 3 are formed integrally. The side of the annular partition 4 is joined to the suction portion 2 by the above-mentioned glass. When a silicon wafer with a small diameter is placed on the suction surface 2a, the outer periphery of a silicon wafer W with a diameter of, for example, 200 mm abuts against the inner periphery of the dividing surface 4a. In this case, the air inside the suction portion 2 needs to be sucked only through the ventilation passage 3d and suction groove 3e located on the inner periphery of the annular partition 4.

In addition, in Figures 3 and 4, the suction portion 2 shows a mounting member 1 having a single annular partition portion 4, but it may also have multiple annular partition portions 4.

The mounting members 1 and 10 of the present disclosure are made of aluminum oxide ceramics in which the support portion 3 contains oxides of manganese, cobalt and silicon, the content of manganese oxide being 2% by mass or more and 6% by mass or less, the content of cobalt oxide being 0.6% by mass or more and 2% by mass or less, and the content of silicon oxide being 0.02% by mass or more and 3% by mass or less.

Here, aluminum oxide ceramics refers to ceramics in which the content of aluminum oxide (Al ₂ O ₃ ) is 89 mass % or more out of a total of 100 mass % of all components constituting the ceramics.

The manganese oxide and cobalt oxide contained in the aluminum oxide ceramics constituting the mounting member 1, 10 are coloring components. The manganese oxide content is 2% by mass or more and 6% by mass or less, and the cobalt oxide content is 0.6% by mass or less.
The content of the color component is 2% by mass or more. By including such a coloring component, the mounting member 10 of the present disclosure can have a dark color (black), and therefore the total reflectance in the wavelength range of 360 nm to 650 nm is reduced to 15% or less. By reducing the total reflectance in this manner, the contrast with the contour of the adsorbate W becomes clear, and it is possible to prevent erroneous recognition of the contour of the adsorbate W.

Here, manganese oxide absorbs light, and in the case of aluminum oxide ceramics in which the only coloring component is manganese oxide, it exhibits a red color. Cobalt oxide absorbs light, and in the case of aluminum oxide ceramics in which the only coloring component is cobalt oxide, it exhibits a blue or green color depending on the degree of oxidation. By setting the content of manganese oxide and cobalt oxide within the above ranges, respectively, the annular surface 3a and the dividing surface 4a can be made black with low reflectance.

In addition, silicon oxide is a component that forms a grain boundary phase that bonds crystals together to improve fracture toughness, and combines with the coloring components manganese oxide and cobalt oxide to suppress discoloration of the colorant. The content of silicon oxide is 0.02% by mass or more and 3% by mass or less. By making the content of silicon oxide 0.02% by mass or more, a grain boundary phase that bonds crystals together is formed to improve fracture toughness, and it combines with the coloring components manganese oxide and cobalt oxide to suppress discoloration of the colorant, but if the content exceeds 3% by mass, there is a high possibility that aluminosilicates will be generated, and if this aluminosilicate is generated, there is a risk that stains will remain on the annular surface 3a and the dividing surface 4a.

In addition to the above components, the aluminum oxide ceramic may contain magnesium oxide and calcium oxide as components that act as sintering aids and mainly constitute the grain boundary phase. The total content of magnesium oxide and calcium oxide is, for example, 0.1 mass% or more and 0.2 mass% or less out of 100 mass% of the total of all components that constitute the aluminum oxide ceramic.

At least one of the annular surface 3a and the dividing surface 4a of the mounting member 1, 10 of the present disclosure may have an arithmetic mean roughness Ra of 0.4 μm or less.

When the arithmetic mean roughness Ra is within the above range, the specular reflectance increases slightly but the diffuse reflectance decreases significantly, making it easier to prevent erroneous recognition of the contour of the object to be attracted W.

In particular, it is preferable that at least one of the annular surface 3a and the dividing surface 4a of the mounting member 1, 10 has an arithmetic mean roughness Ra of 0.11 μm or more and 0.35 μm or less.

If the arithmetic mean roughness Ra is 0.11 μm or more, when the adsorbate W is adsorbed and held on the adsorption surface for polishing, the abrasive grains and polishing debris contained in the polishing slurry are less likely to adhere to the adsorption surface, making it easier to adsorb and hold the next adsorbate W after polishing is completed.

When the arithmetic mean roughness Ra is 0.35 μm or less, the diffuse reflectance of that surface in the wavelength range of 360 nm to 650 nm is further reduced to 11% or less. In addition, when the annular surface 3a and the divided surface 4a are washed with pure water or the like, the contact angle with the pure water is reduced, improving the washing efficiency.

In addition, the arithmetic mean roughness Ra of at least one of the annular surface 3a and the dividing surface 4a on the outer periphery side may be smaller than the arithmetic mean roughness Ra on the inner periphery side. Note that the outer periphery side of the annular surface 3a refers to a portion of the annular surface 3a that is located on the outer periphery side of the center between the inner periphery and the outer periphery, and the inner periphery side of the annular surface 3a refers to a portion of the annular surface 3a that is located on the inner periphery side of the center between the inner periphery and the outer periphery.

Similarly, the outer periphery of the dividing surface 4a refers to the portion of the dividing surface 4a that is closer to the outer periphery than the center between the inner and outer periphery, and the inner periphery of the dividing surface 4a refers to the portion of the dividing surface 4a that is closer to the inner periphery than the center between the inner and outer periphery.

If the arithmetic mean roughness Ra of the outer periphery of the annular surface 3a is smaller than the arithmetic mean roughness Ra of the inner periphery, the diffuse reflectance of the outer periphery of the annular surface 3a is further reduced, and the effect of preventing erroneous recognition of the contour of a large-diameter object to be attracted W, whose outer periphery abuts the inner periphery of the annular surface 3a, is further enhanced. In this case, the arithmetic mean roughness Ra of the inner periphery of the annular surface 3a is larger than the arithmetic mean roughness Ra of the outer periphery of the annular surface 3a, and therefore the anchor effect on the object to be attracted W is improved, and the holding force of the object to be attracted W is increased.

The difference between the arithmetic mean roughness Ra of the outer periphery side of the annular surface 3a and the arithmetic mean roughness Ra of the inner periphery side is, for example, 0.01 μm or more and 0.13 μm or less.

Similarly, if the arithmetic mean roughness Ra of the outer periphery of the dividing surface 4a is smaller than the arithmetic mean roughness Ra of the inner periphery, the diffuse reflectance of the outer periphery of the dividing surface 4a is further reduced, and the effect of preventing erroneous recognition of the contour of the small-diameter adsorbate W, whose outer periphery abuts the inner periphery of the dividing surface 4a, is further enhanced. In this case, the arithmetic mean roughness Ra of the inner periphery of the dividing surface 4a is larger than the arithmetic mean roughness Ra of the outer periphery of the dividing surface 4a, and therefore the anchor effect on the adsorbate W is improved, and the holding force of the adsorbate W is increased.

The difference between the arithmetic mean roughness Ra of the outer periphery side of the dividing surface 4a and the arithmetic mean roughness Ra of the inner periphery side is, for example, 0.01 μm or more and 0.13 μm or less.

The cut level difference (Rδc) in the roughness curve, which represents the difference between the cut level at a load length ratio of 25% in the roughness curve of at least one of the annular surface 3a and the divided surface 4a and the cut level at a load length ratio of 75% in the roughness curve, is preferably 0.7 μm or less.

Here, the cut level difference (Rδc) is the difference in height between the cut levels C (Rrm1) and C (Rrm2) that correspond to the load length ratios Rmr1 and Rmr2, respectively, in the roughness curve specified in JIS B0601:2001. If the cut level difference (Rδc) is large, the unevenness of the surface being measured will be large, and if it is small, the unevenness of the surface will be small.

When the cut level difference (Rδc) is within the above range, the specular reflectance increases slightly, but the diffuse reflectance decreases significantly, making it easier to prevent erroneous recognition of the contour of the adsorbate W.

When the cut level difference (Rδc) on the outer periphery of the annular surface 3a is smaller than the cut level difference (Rδc) on the inner periphery, the diffuse reflectance on the outer periphery of the annular surface 3a is further reduced, and the effect of preventing erroneous recognition of the contour of a large-diameter object to be attracted W, whose outer periphery abuts the inner periphery of the annular surface 3a, is further enhanced. In this case, the cut level difference (Rδc) on the inner periphery of the annular surface 3a is larger than the cut level difference (Rδc) on the outer periphery of the annular surface 3a, and therefore the anchor effect on the object to be attracted W is improved, and the holding force of the object to be attracted W is increased.

The difference between the cutting level difference (Rδc) on the outer periphery side of the annular surface 3a and the cutting level difference (Rδc) on the inner periphery side is, for example, 0.04 μm or more and 0.25 μm or less.

Similarly, the cut level difference (Rδc) on the outer periphery side of the dividing surface 4a is
If Rδc is smaller than c), the diffuse reflectance on the outer periphery of the dividing surface 4a is further decreased, and the effect of preventing erroneous recognition of the contour of the small-diameter object W whose outer periphery abuts against the inner periphery of the dividing surface 4a is further increased. In this case, the cutting level difference (Rδc) on the inner periphery of the dividing surface 4a is larger than the cutting level difference (Rδc) on the outer periphery of the dividing surface 4a, and therefore the anchor effect on the object W is improved, and the holding force of the object W is increased.

The difference between the cutting level difference (Rδc) on the outer periphery side of the dividing surface 4a and the cutting level difference (Rδc) on the inner periphery side is, for example, 0.04 μm or more and 0.25 μm or less.

The arithmetic mean roughness Ra and the cut level difference (Rδc) can be measured in accordance with JIS B 0601-2001 using a laser microscope (Keyence Corporation, Ultra-Deep Color 3D Shape Measuring Microscope (VK-X1000 or its successor model)). The measurement conditions are as follows: no cutoff value λs, cutoff value λc of 0.08 mm, measurement range per point from the annular surface 3a or divided surface 4a to be measured of 1404 μm x 1053 μm, and four lines to be measured are drawn at approximately equal intervals along the longitudinal direction for each measurement range. Then, eight measurement ranges are set at approximately equal intervals on the circumference of the annular surface 3a or divided surface 4a, and line roughness measurements are performed on a total of 32 lines to be measured.

At least one of the annular surface 3a and the divided surface 4a is used as the measurement target surface, and the lightness index L* in the CIE 1976 L*a*b* color space of the measurement target surface may be 40 or less, and the chromaticness indices a* and b* may be between -1 and 1. When the lightness index L* and the chromaticness indices a* and b* are in this range, the tendency toward black-based achromatic colors increases across the entire visible light range, making it possible to reduce the reflectance. Furthermore, the tendency toward achromatic colors increases, suppressing color unevenness.

The color difference ΔE*ab of the surface to be measured may be 0.5 or less (excluding 0). When the color difference ΔE*ab is within the above range, the variation in the color tone of the surface to be measured is reduced and the variation becomes less noticeable, thereby improving the product value.

Here, the color difference ΔE*ab is an index showing the variation in color tone, and is expressed by the following formula (2).
ΔE*ab=[(ΔL*) ² +(Δa*) ² +(Δb*) ² ] ^1/2 (2)
(ΔL* is the difference between the lightness index L1* of a first measurement point located on the outer periphery of the annular surface 3a or the divided surface 4a and the lightness index L2* of a second measurement point located on the radially inner periphery of the first measurement point, Δa* is the difference between the chromaticness index a1* of the first measurement point and the lightness index a2* of the second measurement point, and Δb* is the difference between the chromaticness index b1* of the first measurement point and the lightness index b2* of the second measurement point.)

The lightness index L* and chromaticness indices a*, b* can be measured by setting the first and second measurement points at four locations approximately equally spaced apart on the circumference of the annular surface 3a or the divided surface 4a.

The values of the lightness index L* and the chromaticness indices a* and b* can be determined in accordance with JIS Z 8722:2009. For example, a spectrophotometer (NF777 manufactured by Nippon Denshoku Industries Co., Ltd. or its successor model) can be used, and the measurement conditions can be set to a CIE standard light source D65 and a viewing angle of 2°.

The reflectance of at least one of the annular surface 3a and the dividing surface 4a may decrease according to a polynomial approximation curve from 700 nm to 400 nm wavelength.

If the reflectance decreases according to a polynomial approximation curve as the wavelength moves from 700 nm to 400 nm, the contour of the adherend object W can be made clearer when inspecting the adherend object W by irradiating it with white light (e.g., white light from an LED light source) that has a peak in its spectral distribution in the wavelength range of 400 nm to 640 nm.

Figure 5 is a graph showing the reflectance of the annular surface of the mounting member shown in Figure 1.

Specifically, this graph plots the reflectance of the first and second measurement points in the wavelength range of 400 nm to 700 nm with wavelength intervals of 20 nm, and connects each plot with a curve.

To determine whether the wavelength is decreasing from 700 nm to 400 nm according to a polynomial approximation curve, first, use the graph tool provided in Excel (registered trademark, Microsoft Corporation) to select the approximation curve that is closest to the graph in which the plots are connected by a curve. If the selected approximation curve is a polynomial approximation curve, select the degree of the polynomial approximation curve (in the graph shown in FIG. 5, the degree is 4 for all) so that the polynomial approximation curve is closest to the graph, and then calculate the correlation coefficient R. Then, using the r table (correlation coefficient test table), the correlation coefficient R is tested at a significance level of 5% (two-sided probability). If it is significant, it can be said that the wavelength is decreasing from 700 nm to 400 nm according to a polynomial approximation curve. The polynomial approximation formula and the determination coefficient R ² of the curve obtained by plotting the reflectance of the first measurement target point of the adsorbent W are as shown in FIG. 4, the correlation coefficient R is 0.9921, and the number of samples is 16.

The polynomial approximation equation and the coefficient of determination ^R2 of the curve obtained by plotting the reflectance of the second measurement target point are as shown in Figure 4, the correlation coefficient R is 0.9926, and the number of samples is 16. All of the curves obtained by plotting the reflectance are significant when the correlation coefficient R is tested at a significance level of 5%.

The reflectance drops sharply as the wavelength increases from 700 nm to 640 nm, and then drops gradually from 640 nm to 400 nm.

Figure 6 is a schematic diagram showing an example of an inspection device of the present disclosure equipped with the mounting member shown in Figure 1.

The inspection device 20 includes the mounting members 1 and 10, a vacuum pump 21 as a suction means, an irradiation unit 22 as a light irradiation means, and a CCD camera 23 as an imaging means.

The irradiation unit 22 irradiates light via a reflection mirror 24 onto the outer edge surface and annular surface 3a of the adherend W that is adhered and held on the adsorption surface 2a by the suction of the vacuum pump 21. The CCD camera 23 receives the light specularly reflected from the outer edge surface and annular surface 3a of the adherend W, captures an image based on that light, and outputs it to the image processing unit 24.

Here, the CCD camera 23 is installed in a position where it is difficult to receive light diffusely reflected from the outer edge surface and the annular surface 3a.

The image processing unit 24 performs binarization processing on the image input from the CCD camera 23 using a predetermined threshold value to obtain a binary image. From this binary image, the contour of the object to be attracted W is extracted, and the center position of the object to be attracted W is extracted. The image processing unit 24 outputs the extracted center position of the object to be attracted W to the control unit, so that various controls can be performed.

Furthermore, the processing device (not shown) of the present disclosure is, for example, a cutting device that cuts the attractant W into a lattice shape, or a polishing device that polishes the surface of the attractant W, and is equipped with an inspection device 20. The cutting device is equipped with an inspection device, a cutting blade that cuts the attractant W into a lattice shape, and a driving means for rotating the cutting blade. Furthermore, the polishing device is equipped with an inspection device, a polishing plate that polishes the surface of the attractant, and a driving means for rotating the polishing plate and the attractant W to slide relative to each other.

Such a processing device uses the mounting member of the present disclosure, which can prevent erroneous recognition of the contour of the object to be attracted W, and can therefore process the object to be attracted W with high precision.

Next, an example of a method for manufacturing the mounting member will be described.
First, aluminum oxide (Al ₂ O ₃ ) powder as the main raw material, silicon oxide (SiO ₂ ) powder as the sintering aid, manganese oxide (MnO ₂ ) powder and cobalt oxide (Co ₃ O ₄ ) powder as the coloring components are prepared.

Next, these powders are weighed in desired amounts to obtain primary raw material powder. For example, the sintering aid is weighed so that the total content of silicon converted to SiO2 is 0.02% to 3% by mass out of 100% by mass of all components constituting the ceramic sintered body. The coloring component is weighed so that the content of manganese converted to _MnO2 is 2% to 6% by mass out of 100% by mass of all components constituting the ceramic sintered body, and the content of cobalt converted to _Co3O4 is 0.6% to 2% by mass out of ₁₀₀ % by mass of all components constituting the ceramic sintered body. Then, the remainder is weighed so that aluminum oxide ( _Al2O3 ) powder is obtained. Next, a binder such as PEG ₍ polyethylene _glycol ) in an amount of 0.1 to 1 part by mass and a solvent in an amount of 100 parts by mass are weighed out relative to 100 parts by mass of the primary raw material powder, and the mixture is mixed and stirred with the primary raw material powder to obtain a slurry.

The slurry is then spray-granulated using a spray granulation device (spray dryer) to obtain granules, which are then molded into a disk-shaped compact using powder press molding or isostatic press molding (rubber press method), and a recess for attaching the adsorption part is formed in the compact by cutting.

Then, the molded body with the recesses formed therein is held in an air (oxidizing) atmosphere, for example at 1400°C or higher and 1500°C or lower, for a desired period of time, to obtain a support part made of dense ceramics.

Glass is applied to the inner circumferential surface and bottom surface of the recess of the support part, and a previously prepared disk-shaped porous ceramic adsorption part is placed in the recess and pressure is applied in the thickness direction. The temperature is set to, for example, 900°C to 1100°C and maintained for a predetermined time to obtain a bonded body in which the support part and adsorption part are bonded.

Then, a first polishing is performed on the upper surface of the joint using diamond abrasive grains with an average grain size of 8 μm to 12 μm and a polishing plate made of wrought iron or cast iron. Next, a second polishing is performed using diamond abrasive grains with an average grain size of 2 μm to 6 μm and a polishing plate made of copper or cast iron. The polishing plate used for the first polishing and the second polishing is preferably made of cast iron containing spheroidal graphite.

Finally, a third polishing is performed using diamond abrasive grains with an average grain size of 1 μm to 3 μm and a polishing plate made of tin or tin-lead alloy.

Then, a slurry containing diamond abrasive grains with an average grain size of 10 μm or less is dropped onto, for example, a cast iron polishing plate, and the upper surface of the bonded body is hand-lapped to obtain the mounting member of the present disclosure.

The arithmetic mean roughness Ra, cutting level difference (Rδc), lightness index L*, and chromaticness indexes a* and b* can be adjusted to the desired values by hand lapping while appropriately adjusting the material of the polishing plate, the average grain size of the diamond abrasive grains, the surface pressure on the upper surface of the bonded body (the surface to be polished), and the amount of slurry supplied per unit time.

The above describes the mounting member of the present disclosure, but the present disclosure is not limited to the above-described embodiment, and various improvements and modifications may be made without departing from the spirit and scope of the present disclosure.

1, 10: Mounting member 2: Adsorption portion 2a: Adsorption surface 3: Support portion 3a: Annular surface 3b: Strip portion 3c: Mounting hole 3d: Air passage 3e: Suction groove 4: Annular partition portion 4a: Partition surface 20: Inspection device 21: Vacuum pump 22: Irradiation portion 23: CCD camera 24: Reflection mirror 25: Image processing portion 26: Control portion W: Adsorbed object (wafer)

Claims (15)

A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less ,
an annular partition portion having a dividing surface that divides the adsorption surface in a radial direction is provided, the annular partition portion being made of the aluminum oxide ceramics;
At least one of the annular surface and the divided surface has an arithmetic mean roughness Ra of 0.4 μm or less . 2. The mounting member according to claim 1 , wherein at least one of the annular surface and the divided surface has an arithmetic mean roughness Ra on an outer circumferential side smaller than an arithmetic mean roughness Ra on an inner circumferential side. A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less,
an annular partition portion having a dividing surface that divides the adsorption surface in a radial direction is provided, the annular partition portion being made of the aluminum oxide ceramics;
A mounting member, wherein a cut level difference (Rδc) in the roughness curve, which represents a difference between a cut level at a load length ratio of 25% in a roughness curve of at least one of the annular surface and the divided surface and a cut level at a load length ratio of 75% in the roughness curve, is 0.7 μm or less. 4. The mounting member according to claim 3 , wherein at least one of the annular surface and the divided surface has a cut level difference (R.delta.c) on an outer circumferential side smaller than a cut level difference (R.delta.c) on an inner circumferential side. A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less,
an annular partition portion having a dividing surface that divides the adsorption surface in a radial direction is provided, the annular partition portion being made of the aluminum oxide ceramics;
A mounting member, wherein at least one of the annular surface and the divided surface is a measurement target surface, and the measurement target surface has a lightness index L* of 40 or less, a chromaticness index a* of -1 or more and 1 or less, and a chromaticness index b* of -1 or more and 1 or less in a CIE 1976 L*a*b* color space. A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less,
an annular partition portion having a dividing surface that divides the adsorption surface in a radial direction is provided, the annular partition portion being made of the aluminum oxide ceramics;
A mounting member, wherein the reflectance of at least one of the annular surface and the divided surfaces decreases according to a polynomial approximation curve from 700 nm to 400 nm in wavelength. A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less,
The annular surface has an arithmetic mean roughness Ra of 0.4 μm or less. 8. The mounting member according to claim 7, wherein the annular surface has an arithmetic mean roughness Ra on an outer circumferential side smaller than an arithmetic mean roughness Ra on an inner circumferential side. A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less,
A mounting member, wherein a cut level difference (Rδc) in the roughness curve, which represents the difference between a cut level at a load length rate of 25% in the roughness curve of the annular surface and a cut level at a load length rate of 75% in the roughness curve, is 0.7 μm or less. The mounting member according to claim 9 , wherein the cut level difference (Rδc) on the outer periphery side of the annular surface is smaller than the cut level difference (Rδc) on the inner periphery side. A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less,
The annular surface is a measurement target surface, and the measurement target surface has a lightness index L* of 40 or less, a chromaticness index a* of -1 or more and 1 or less, and a chromaticness index b* of -1 or more and 1 or less in the CIE1976 L*a*b* color space. 12. The mounting member according to claim 5 or 11 , wherein the color difference ΔE*ab of the measurement surface is 0.5 or less (excluding 0). A mounting member comprising an adsorption section having an adsorption surface for adsorbing and holding an adsorbed object, and a support section having an annular surface surrounding the adsorption surface, the support section being made of an aluminum oxide ceramic containing manganese oxide, cobalt oxide, and silicon oxide, the manganese oxide content being 2% by mass or more and 6% by mass or less, the cobalt oxide content being 0.6% by mass or more and 2% by mass or less, and the silicon oxide content being 0.02% by mass or more and 3% by mass or less,
A mounting member, wherein the reflectance of the annular surface decreases according to a polynomial approximation curve from 700 nm to 400 nm in wavelength. An inspection device comprising the mounting member according to any one of claims 1 to 13 . A processing device comprising the mounting member according to any one of claims 1 to 13 .

Images