JP2023176280A - Adsorption member - Google Patents

Abstract

To provide an adsorption member that has excellent adsorption properties to an adsorbed object, does not easily damage the back side of the adsorbed object, and has high cleaning efficiency.SOLUTION: An adsorption member according to the present disclosure includes a first film having an adsorption surface for adsorbing an object to be adsorbed, and a porous substrate supporting the first film. The average value of the arithmetic mean inclination angle (RΔa) in the roughness curve of the suction surface is 15° or more and 45° or less.SELECTED DRAWING: Figure 2

Description

The present invention relates to a suction member, and a processing device and an inspection device using this suction member.

2. Description of the Related Art Conventionally, in the manufacturing process of memories, ICs (integrated circuits), etc., suction members have been used to suction and hold objects to be suctioned, such as semiconductor wafers. Examples of such an adsorption member include a vacuum adsorption member using a porous member as described in Patent Document 1.

JP 2019-12757 Publication

In a vacuum suction member using a porous member, the particles constituting the porous member are shed, and the suspended particles are left between the suction surface of the vacuum suction member and the back surface of the object to be adsorbed. It may get caught. If such floating particles are caught between the suction surface of the vacuum suction member and the back surface of the object to be adsorbed, the back surface of the object to be adsorbed will be damaged.

An object of the present disclosure is to provide an adsorption member that has excellent adsorption properties to an adsorbed object, does not easily damage the back surface of the adsorbed object, and has high cleaning efficiency.

(1) An adsorption member according to the present disclosure includes a first film having an adsorption surface for adsorbing an object to be adsorbed, and a porous substrate that supports the first film. The average value of the arithmetic mean inclination angle (RΔa) in the roughness curve of the suction surface is 15° or more and 45° or less.

(2) In the adsorption member according to (1) above, the support part has a second film having an annular surface surrounding the adsorption surface, and a bottomed annular body that supports the second film and accommodates the porous substrate. In addition, it is equipped with the following.
(3) In the attraction member according to (2) above, the attraction surface and the annular surface have semiconductivity.
(4) In the adsorption member according to (2) or (3) above, the second film has higher fracture toughness than the bottomed annular body, and the second film is located on an extension of the outer peripheral surface of the bottomed annular body. The thickness of the outer peripheral portion of the membrane is greater than the thickness of the first membrane.
(5) In the suction member according to any one of (1) to (4) above, the suction surface exhibits a black color, and the wavelength at every 10 nm interval in the wavelength range 360 nm to 740 nm and the reflectance R (λ ) (However, λ has a positive correlation with the wavelength (nm) within the wavelength range), and the slope of the regression equation obtained by logarithmic approximation is 2 or less.
(6) In the adsorption member according to any one of (2) to (5) above, the annular surface exhibits a black color, and at least one of the annular surface and the adsorption surface has a wavelength of 10 nm intervals in a wavelength range of 360 nm to 740 nm. The reflectance R(λ) (where λ is a wavelength (nm) within the wavelength range) has a positive correlation, and the slope of the regression equation obtained by logarithmic approximation is 2 or less.
(7) In the suction member according to any one of (1) to (6) above, the suction surface exhibits a black color, and the color difference within the suction surface is 3 or less (excluding 0).
(8) In the suction member according to any one of (2) to (7) above, the annular surface exhibits a black color, and the color difference within the annular surface is 3 or less (excluding 0).

(9) A processing device according to the present disclosure includes the suction member according to any one of (1) to (8) above. Furthermore, (10) the inspection device according to the present disclosure includes the suction member according to any one of (1) to (8) above.

As described above, in the suction member according to the present disclosure, the average value of the arithmetic mean inclination angle (RΔa) in the roughness curve of the suction surface is 15° or more and 45° or less. Therefore, the adsorption member according to the present disclosure has excellent adsorption properties to the adsorbed object, does not easily damage the back surface of the adsorbed object, and has high cleaning efficiency.

Furthermore, the processing device and the inspection device according to the present disclosure include the suction member according to the present disclosure. Therefore, the processing device and the inspection device according to the present disclosure have excellent adsorption properties to the adsorbed object, are less likely to damage the back surface of the adsorbed object, and have high cleaning efficiency.

FIG. 1 is a perspective view showing an adsorption member according to an embodiment of the present disclosure. FIG. 2 is an explanatory diagram showing a cross section taken along the line XX shown in FIG. 1. FIG. FIG. 7 is an explanatory diagram showing a cross section of an adsorption member according to another embodiment of the present disclosure. 4 is an explanatory diagram for explaining various embodiments of region Y shown in FIG. 3. FIG. FIG. 2 is a schematic diagram showing an inspection device according to an embodiment of the present disclosure, including the suction member shown in FIG. 1. FIG.

An adsorption member according to an embodiment of the present disclosure will be described based on FIGS. 1 and 2. As shown in FIGS. 1 and 2, an adsorption member 1 according to one embodiment includes a first membrane 2, a porous substrate 3, and a support section 4. FIG. 1 is a perspective view showing a suction member 1 according to one embodiment, and FIG. 2 is an explanatory view showing a cross section taken along the line XX shown in FIG.

The first film 2 has an adsorption surface 2a for adsorbing an object to be adsorbed. The raw material forming the first film 2 is not limited, and includes, for example, diamond-like carbon (DLC), silicon carbide, titanium, titanium nitride, titanium carbide, titanium carbonitride, or oxidized material in which oxygen is deficient from the stoichiometric composition. Examples include titanium or aluminum titanate. The first membrane 2 has a thickness of, for example, 0.5 μm or more and 3 μm or less, and has a through hole that penetrates from a surface facing a porous substrate 3 (described later) to an adsorption surface 2a. Due to the presence of such through holes in the first membrane 2, when suction is applied from the porous substrate 3 side, the object to be adsorbed is adsorbed to the adsorption surface 2a. The average diameter of the through holes present in the first film 2 is, for example, 30 μm or more and 70 μm or less. The first membrane 2 may be a porous membrane or a dense membrane as long as it has the above-mentioned through holes.

In the adsorption member 1 according to one embodiment, the average value of the arithmetic mean inclination angle (RΔa) in the roughness curve of the adsorption surface 2a of the first film 2 is 15° or more and 45° or less. When the average value of the arithmetic mean inclination angle (RΔa) is 15° or more, the area where the attraction surface 2a contacts the back surface of the object to be attracted decreases. Therefore, floating particles are less likely to be caught between the adsorption surface 2a and the back surface. As a result, the back surface of the adsorbed object is less likely to be damaged. On the other hand, if the average value of the arithmetic mean inclination angle (RΔa) is 45° or less, the ventilation resistance will be difficult to increase even if backwashing is performed from the back side of the bottomed annular body 41 of the support portion 4, which will be described later. As a result, the first membrane 2 and the porous substrate 3 are difficult to come off from the support part 4, and can be efficiently cleaned.

The arithmetic mean tilt angle (RΔa) is measured using a shape analysis laser microscope (manufactured by Keyence Corporation, ultra-deep color 3D shape measurement microscope (VK-X1100 or its successor model)) in accordance with JIS B 0601:2001. can do. Specifically, the illumination method is coaxial epi-illumination, the magnification is 240 times, there is no cutoff value λs, the cutoff value λc is 0.08 mm, there is no cutoff value λf, and there is correction for end effects, and the measurement target is The measurement range per point from the suction surface may be set to 1420 μm×1070 μm. Line roughness measurement may be performed by drawing four lines to be measured at approximately equal intervals in each measurement range along the longitudinal direction of the measurement range. The length of each line to be measured is 1282 μm. The measurement range is set at six locations at approximately equal intervals along the circumferential direction, and the number of lines to be measured is 24 in total. The average value of the arithmetic mean slope angle (RΔa) is the average value of the measured values obtained from these 24 lines.

The adsorption surface 2a of the first film 2 may have semiconductivity. In this specification, "semiconductivity" means that the surface resistance value is 10 ⁴ Ω or more and 10 ¹¹ Ω or less. When the suction surface 2a of the first film 2 has semiconductivity, it is possible to further reduce the occurrence of sudden discharge due to peeling electrification that tends to occur when an object to be suctioned is removed from the suction surface 2a. The surface resistance value may be determined using a two-needle electrical resistance meter (PRS-802, manufactured by PROSTAT), with a terminal distance of 10 mm and an applied voltage of 100 V.

The adsorption surface 2a of the first film 2 may be black. When the adsorption surface 2a of the first film 2 is black, the wavelength at every 10 nm interval in the wavelength range 360 nm to 740 nm and the reflectance R (λ) of the adsorption surface 2a (where λ is the wavelength (nm) within the wavelength range) may have a positive correlation, and the slope of the regression equation obtained by logarithmic approximation may be 2 or less. If the slope of the regression equation is 2 or less, the slope of the regression equation is small, and the reflectance tends to converge even in a region where the wavelength is large. Therefore, the difference between the reflectance in a small wavelength range and the reflectance in a large wavelength range becomes small. As a result, color unevenness is less likely to occur, making it easier to detect and identify the adsorbed object. In particular, visual detection and identification become easier.

When the suction surface 2a of the first film 2 is black, the color difference within the suction surface 2a may be 3 or less (excluding 0). If the color difference within the suction surface 2a is 3 or less, color unevenness will be smaller. By reducing color unevenness, the commercial value of the suction member 1 is also improved.

The reflectance R (λ) and color difference of the suction surface 2a are measured using, for example, a spectrophotometer (manufactured by Konica Minolta, Inc., CM-2600d or its successor model), and the measurement conditions are as follows: the light source is CIE standard illuminant D65; It is determined by setting the viewing angle to 2°. When determining the color difference, first, measurement points are set at approximately equal intervals, for example, five points, along the circumferential direction of the suction surface 2a. The color difference (ΔE*ab) may be calculated using the following formula (A) by setting any one of these five measurement points as a reference measurement point and the others as comparison measurement points.

ΔE*ab=((ΔL*) ² + (Δa*) ² + (Δb*) ² )) ^1/2 ...(A)
ΔL*: Difference in lightness index L* of the comparison measurement point with respect to the reference measurement point Δa*: Difference in the chromaticness index a* of the comparison measurement point with respect to the reference measurement point Δb*: Chromaticity index b of the comparison measurement point with respect to the reference measurement point *difference

The porous substrate 3 is a member for supporting the first membrane 2. The method of supporting the first membrane 2 on the porous substrate 3 is not limited. The porous substrate 3 is not particularly limited as long as it has a size that can support the first membrane 2. The porous substrate 3 has a thickness of, for example, 5 mm or more and 20 mm or less. The porous substrate 3 has a diameter of, for example, 70 mm or more and 203 mm or less.

The porous substrate 3 is made of ceramics, for example. Examples of raw materials for such ceramics include ceramic raw materials containing oxides such as aluminum oxide and silicon oxide as a main component. In this specification, the porous substrate 3 means a substrate having a porosity of 20% by volume or more as determined by mercury intrusion porosimetry. The mercury intrusion method is a method of injecting mercury (mercury intrusion method) into the pores of a porous substrate 3 (sample) using a mercury intrusion porosimeter to determine the porosity, and is based on JIS R 1655-2003. Just ask.

The porous substrate 3 includes pores communicating in the thickness direction, and the porosity of the pores contained in the porous substrate 3 is not limited as long as it is 20% by volume or more. The porosity of the pores included in the porous substrate 3 may be, for example, 28 volume % or more and 38 volume % or less. If the porosity is within this range, ventilation resistance can be lowered without reducing mechanical strength. The average diameter of the pores present in the porous substrate 3 is, for example, 30 μm or more and 70 μm or less.

The pores included in the porous substrate 3 and at least some of the through holes included in the first membrane 2 are in communication with each other. Due to the communication between the pores and the through-holes, when suction is applied from the porous substrate 3 side, the adsorbed object is adsorbed onto the adsorption surface 2a of the first membrane 2.

As shown in FIG. 1, in an adsorption member 1 according to one embodiment, a porous substrate 3 supporting a first membrane 2 is housed in a support portion 4. As shown in FIG. The support part 4 has a bottomed annular body 41 for accommodating the porous substrate 3, and an attachment hole 4a is formed at the outer edge of the bottom for attachment to various devices such as processing equipment and inspection equipment. There is. The support portion 4 is made of dense ceramics. Dense ceramics refers to ceramics with a relative density of, for example, 94% or more.

This relative density is a percentage of the apparent density of the ceramic determined in accordance with JIS R 1634:1998 with respect to the theoretical density of the ceramic. Regarding the theoretical density of ceramics, the content of each component constituting the ceramic is determined by ICP (Inductively Coupled Plasma) emission spectroscopy or fluorescent X-ray analysis, and each component is identified by X-ray diffraction using CuKα rays. Bye.

As shown in FIG. 2, in addition to the attachment hole 4a, a suction path 4b located in the thickness direction of the bottom is formed at the bottom of the support portion 4, and between the suction path 4b and the porous substrate 3. , groove 4c is located. The suction passages 4b and grooves 4c formed in the support portion 4 communicate with pores included in the porous substrate 3. Therefore, even if the porous substrate 3 is accommodated in the support part 4, the object to be adsorbed can be adsorbed to the adsorption surface 2a of the first membrane 2 by suctioning from the bottom of the support part 4. At least one suction path 4b and groove 4c may be formed. For example, a plurality of suction paths 4b and grooves 4c may be formed concentrically, or may be formed in a linear shape such as a row or a grid. They may be formed randomly or may be formed randomly.

As shown in FIG. 3, the second membrane 5 may be supported on the upper surface 41a of the bottomed annular body 41 of the support portion 4. FIG. 3 is an explanatory diagram showing a cross section of an adsorption member 1' according to another embodiment of the present disclosure. The same members as those shown in FIGS. 1 and 2 are designated by the same reference numerals, and detailed description thereof will be omitted.

In the suction member 1', the second membrane 5 has an annular surface 5a surrounding the suction surface 2a of the first membrane 2. The annular surface 5a of the second membrane 5 and the adsorption surface 2a of the first membrane 2 are located so as to be substantially flush with each other. Since the second film 5 is supported on the upper surface 41a of the bottomed annular body 41 of the support part 4, the heat generated when processing the adsorbed object is quickly released from the first film 2 to the second film 5. be able to.

The annular surface 5a of the second film 5 may have semiconductivity, similar to the adsorption surface 2a of the first film 2. The semiconductivity is as described above, and detailed explanation will be omitted. If the annular surface 5a of the second film 5 has semiconductivity, it is possible to further reduce the occurrence of rapid discharge due to peeling electrification that tends to occur when the object to be attracted is removed from the attraction surface 2a.

The raw material forming the second film 5 is not limited, and like the first film 2, diamond-like carbon (DLC), silicon carbide, titanium, titanium nitride, titanium carbide, titanium carbonitride, or stoichiometric composition can be used. Examples include oxygen-deficient titanium oxide or aluminum titanate. The second film 5 may be formed integrally with the first film 2, or may be formed separately from the first film 2. For example, when the first film 2 and the second film 5 are integrally formed, the adsorption surface 2a of the first film 2 and the annular surface 5a of the second film 5 tend to be substantially flush.

If the first film 2 or the second film 5 has diamond-like carbon (DLC) as its main component, it can be identified using a Raman spectrometer. Specifically, when measured using a Raman spectrometer, there are peaks near 1555 cm ^-1 , which is the peak position of graphite, and near 1333 cm ^-1 , which is the peak position of diamond. When diamond-like carbon (DLC) is the main component, in the Raman spectrum, the G band is observed in the wave number range of 1500 to 1640 cm ^-1 , and the D band is observed in the wave number range of 1300 to 1400 cm ^-1 . The second film 5 has the strongest peak intensity among the peaks existing in the range of 1500 to 1640 cm ^-1 in the Raman spectroscopic spectrum as H _G and the strongest peak among the peaks existing in the wave number range of 1300 to 1400 cm ^-1 as When the high peak intensity is defined as _HD , it is preferable that H _G > _HD . If this relationship is satisfied, the denseness of the second film 5 can be maintained. The first film 2 and the second film 5 may contain other than diamond-like carbon (DLC), for example, Fe at 0.05 mass ppm or less and Ni at 0.01 mass ppm or less.

When the first film 2 and the second film 5 mainly contain an inorganic substance such as silicon carbide, they can be identified by an X-ray diffraction apparatus using CuKα rays. The content of each component can be determined using, for example, an ICP (Inductively Coupled Plasma) emission spectrometer or a fluorescent X-ray analyzer. The main component in the first film 2 and the second film 5 refers to a component that accounts for 90% by mass or more out of the total 100% by mass of the components constituting each film.

The second film 5 may have higher fracture toughness than the bottomed annular body 41 of the support portion 4 . When the fracture toughness of the second film 5 is higher than that of the bottomed annular body 41, the upper surface 41a of the bottomed annular body 41 is covered with the second film 5 having high fracture toughness. As a result, particles are less likely to detach from the end of the upper surface 41a of the bottomed annular body 41, and floating particles can be reduced.

The difference between the fracture toughness of the second film 5 and the fracture toughness of the bottomed annular body 41 is preferably 1 MPa·m ^1/2 or more, for example. For example, the fracture toughness of the second film 5 is 4.5 MPa·m ^1/2 or more and 11 MPa·m ^1/2 or less, and the fracture toughness of the bottomed annular body 41 is 3 MPa·m ^1/2 or more and 4 MPa·m It is ^1/2 or less. Since the second film 5 is thin, the fracture toughness of both the second film 5 and the bottomed annular body 4 may be determined using a nanoindentation method in accordance with ISO 14577-1.

As shown in FIG. 4, the thickness of the second film 5 may be uniform, and the thickness of the outer peripheral part 5b of the second film 5 located on the extension of the outer peripheral surface 41b of the bottomed annular body 41 is the same as that of the first film. It may be larger than the thickness of the film 2. FIG. 4 is an explanatory diagram for explaining various embodiments of the area Y shown in FIG. 3. When the thickness of the outer peripheral portion 5b of the second film 5 is larger than the thickness of the first film 2, the second film 5 becomes difficult to peel off from the upper surface 41a of the bottomed annular body 41. The thickness of the outer peripheral portion 5b of the second film 5 is, for example, 1.1 times or more and 1.5 times or less the thickness of the first film 2.

The annular surface 5a of the second film 5 may be black. When the adsorption surface 2a of the first film 2 is black, the reflectance R(λ) of the wavelength at every 10 nm interval in the wavelength range 360 nm to 740 nm and at least one of the annular surface 5a and the adsorption surface 2a (however, λ is The wavelength (nm) within the wavelength range may have a positive correlation, and the slope of the regression equation obtained by logarithmic approximation may be 2 or less.

If the slope of the regression equation is 2 or less, the slope of the regression equation is small, and the reflectance tends to converge even in a region where the wavelength is large. Therefore, the difference between the reflectance in a small wavelength range and the reflectance in a large wavelength range becomes small. As a result, color unevenness is less likely to occur, making it easier to detect and identify the adsorbed object. In particular, visual detection and identification become easier. The reflectance R(λ) of the annular surface 5a may be determined by the same method as the method for determining the reflectance R(λ) of the adsorption surface 2a described above.

When the annular surface 5a of the second film 5 is black, the color difference within the annular surface 5a may be 3 or less (excluding 0). If the color difference within the annular surface 5a is 3 or less, color unevenness will be smaller. By reducing color unevenness, the commercial value of the suction member 1 is also improved. The color difference of the annular surface 5a may be determined by the same method as the method for determining the color difference of the suction surface 2a described above.

Next, a method for manufacturing an adsorption member according to the present disclosure will be described. The method for manufacturing the adsorption member according to the present disclosure is not limited, and for example, the adsorption member can be manufactured using the following procedure.

First, a method for manufacturing a porous substrate will be explained. When the main component of the ceramic forming the porous substrate is aluminum oxide, silicon oxide is 16% by mass or more and 22% by mass or less, titanium oxide is 2% by mass or more and 3.4% by mass or less, and magnesium hydroxide is 1% by mass or less. A mixed powder is prepared in which the amount of calcium carbonate is 0.7% by mass or more and 1.1% by mass or less, and the balance is aluminum oxide. The prepared mixed powder may contain impurities in a total amount of 3% by mass or less.

Next, the obtained mixed powder and solvent are wet mixed and pulverized to obtain a slurry. Mixing and grinding are performed using, for example, a barrel mill, rotary mill, vibratory mill, bead mill, attritor, or the like.

A spherical resin may be added as a pore-forming material at a ratio of 30 parts by mass or more and 70 parts by mass or less with respect to 100 parts by mass of the obtained mixed powder. Examples of the spherical resin include powdered polyethylene, vinyl acetate, cellulose, polypropylene, polyvinyl alcohol, and acrylic resin. These pore-forming materials are burned out in the firing process described later to form pores. The average particle diameter of the spherical resin is not limited, and if it is, for example, 50 μm or more and 106 μm or less, a porous substrate having an average pore diameter of 40 μm or more and 85 μm or less can be obtained by firing as described below.

Next, granules are obtained by spray drying the slurry using a spray drying device. After molding the granules using an isostatic press molding device at a pressure of, for example, 80 MPa, cutting can be performed as necessary to obtain a disc-shaped molded body. By firing the obtained molded body in an air atmosphere at a temperature of 1500°C or more and 1600°C or less, for example, about 1550°C, a porous body (porous substrate) having a porosity of 35% by volume or more and 40% by volume or less is formed. ) is obtained.

Next, a support portion having a bottomed annular body capable of accommodating the obtained porous substrate is prepared. When the main component of the ceramic that forms the support part having a bottomed annular body is aluminum oxide, aluminum oxide powder (purity of 99.9% by mass or more) and powders of magnesium hydroxide, silicon oxide, and calcium carbonate are used. is put into a grinding mill together with a solvent (ion-exchanged water) and a dispersant and ground until the average particle size (D ₅₀ ) of the powder becomes 1.5 μm or less, and then an organic binder, a plasticizer, and a mold release agent are added. and mix to obtain a slurry.

The content of magnesium hydroxide powder in the total of 100% by mass of the above powder is 0.43% by mass or more and 0.53% by mass or less, the content of silicon oxide powder is 0.039% by mass or more and 0.041% by mass or less, carbonate The content of calcium powder is 0.020% by mass or more and 0.071% by mass or less, and the remainder is aluminum oxide powder and inevitable impurities.

As the organic binder, for example, acrylic emulsion, polyvinyl alcohol, polyethylene glycol, polyethylene oxide, etc. can be used.

Next, the slurry is sprayed and granulated to obtain granules, which are then molded into a disk shape using an isostatic press molding device, and then cut to form recesses. Next, after cutting, the molded body is fired at a firing temperature of 1500° C. or more and 1650° C. or less and a holding time of 4 hours or more and 6 hours or less, thereby obtaining a support portion.

Paste glass is applied to the inner peripheral surface and bottom surface of the bottomed annular body, the porous substrate is accommodated inside the bottomed annular body (in the recess), and pressure is applied from the thickness (up and down) direction. The thickness of the paste-like glass is, for example, 40 μm or more and 200 μm or less. Paste-like glass, for example, contains Si from 30% by mass to 65% by mass, Al from 10% by mass to 40% by mass, B from 10% by mass to 20% by mass, and Ca from 4% by mass. % to 5% by mass, Mg to 1% to 5% by mass, and Ti to 5% by mass or less (excluding 0% by mass), and an organic solvent. This pressurized state is held at 900° C. or higher and 1400° C. or lower for 1 hour or more and 10 hours or less, for example, in an air atmosphere or a vacuum atmosphere, thereby obtaining a bonded body in which the porous substrate is joined to the support portion.

Next, the upper surface (the surface on which the adsorbed object is adsorbed) of the obtained joined body is ground. For example, a rotary grinder is used for the grinding. The grain size number of the diamond grindstone used in grinding is defined by JIS R 6001-1:2017 (ISO 8486-1 (MOD)), and includes, for example, F150 to F220.

Next, a first film is formed on the upper surface of the porous substrate, and a second film is formed on the upper surface of the bottomed annular body of the support portion. When the main components of both the first film and the second film are DLC, the conjugate is placed at a predetermined position in the processing container, and the temperature is evacuated until the pressure becomes, for example, 1.3 kPa or less. Thereafter, the bonded body is heated to 100° C. or more and 450° C. or less in a non-oxidizing gas atmosphere such as argon gas or nitrogen gas or in a high vacuum. Next, in a non-oxidizing gas atmosphere or an inert gas atmosphere, high frequency power and a negative bias voltage are supplied to the bonded body to generate discharge plasma, and the upper surface of the bonded body is irradiated with ions. This ion irradiation removes the oxide film and deposits adhering to the upper surface of the joined body.

By supplying a raw material gas for forming a DLC film into the processing container and generating discharge plasma, a film containing DLC as a main component can be formed on the upper surface of the bonded body. Of these films, the film formed on the top surface of the porous substrate is the first film, and the film formed on the top surface of the bottomed annular body is the second film. Examples of the raw material gas for forming a DLC film include hydrocarbon gases such as methane, acetylene, and toluene. The raw material gas for forming a DLC film may contain hydrogen as necessary.

When the main components of both the first film and the second film are silicon carbide, the bonded body is placed at a predetermined position in the processing container, and the temperature is evacuated until the pressure becomes, for example, 1.3 kPa or less. Thereafter, a silane gas such as SiCH ₃ Cl ₃ , SiHCl ₃ , SiH 4 and a hydrocarbon gas such as _{CH 4} , C ₂ H ₄ , CCl ₄ are mixed together with hydrogen gas or argon gas as a carrier gas in a volume ratio. Supply so that the amount is 5% or more and 20% or less. By heating the bonded body to 1100° C. or more and 1500° C. or less in an atmosphere containing silane-based gas and hydrocarbon gas, a film containing silicon carbide as a main component can be formed on the main surface. Of these films, the film formed on the top surface of the porous substrate is the first film, and the film formed on the top surface of the bottomed annular body is the second film.

The suction member according to the present disclosure is employed in various industrial devices. Examples of such industrial equipment include cutting equipment, polishing equipment, processing equipment, and inspection equipment.

FIG. 5 is a schematic diagram showing an inspection device according to an embodiment of the present disclosure, which includes the suction member shown in FIG. 1. The inspection device 10 includes a suction member 1, a vacuum pump 11 as a suction means, an irradiation section 12 as a light irradiation means, and a CCD camera 13 as an imaging means. Regarding the suction member 1 shown in FIG. 5, the number of suction passages 4b and grooves 4c is omitted compared to the suction member 1 shown in FIG.

The irradiation unit 12 irradiates light, via the reflection mirror 14, onto the outer edge surface of the adsorbed object W, which is attracted and held on the adsorption surface by the suction of the vacuum pump 11, and onto the surface of the support body 4. The CCD camera 13 receives light specularly reflected from the outer edge surface of the adsorbed object W and the surface of the support 4, captures an image based on the light, and outputs the image to the image processing section 14. The CCD camera 13 is provided at a position where it is difficult to receive light diffusely reflected from the outer edge surface and the surface of the support 4.

The image processing unit 15 performs binarization processing on the image input from the CCD camera 13 using a predetermined threshold value to obtain a binary image. The outline of the target object W is extracted from this binary image, and the center position of the target object W is extracted. The image processing section 15 outputs the extracted center position of the target object W to the control section 16, thereby performing various controls.

The processing device (not shown) of the present disclosure is, for example, a cutting device that cuts the target object W into a grid pattern, or a polishing device that polishes the surface of the target object W, which includes the inspection device 10. The cutting device includes an inspection device, a cutting blade that cuts the object to be attracted in a grid pattern, and a driving means that rotationally drives the cutting blade. The polishing apparatus includes an inspection device, a polishing plate for polishing the surface of the object to be attracted, and a drive means for rotationally driving the polishing plate and the object to be attracted W to slide relative to each other.

Since such a processing device uses the suction device of the present disclosure that can prevent erroneous recognition of the contour of the suction object W, it is possible to process the suction object W with high precision.

The adsorption member according to the present disclosure is not limited to the above-described embodiment and other embodiments. For example, in the above-described adsorption members 1 and 1', the porous substrate 3 is accommodated in the support 4. However, in the adsorption member according to the present disclosure, the porous substrate does not need to be housed in the support.

For example, in the above-described adsorption members 1 and 1', both the first membrane 2 and the porous substrate 3 have a circular shape when viewed from above. However, the first membrane and the porous substrate are not limited to a circular shape, and may have an elliptical shape, triangular, square, pentagonal, triangular, square, pentagonal, etc. when viewed from above, depending on the desired use. It may have a polygonal shape such as a hexagonal shape.

Furthermore, in the above-described adsorption members 1 and 1', the first membrane 2 and the porous substrate 3 have the same shape when viewed from above. However, the first membrane and the porous substrate do not need to have the same shape when viewed from above. The shape of the porous substrate is not limited as long as it can support the first membrane.

A porous substrate was produced by the following procedure. First, a mixed powder containing 19% by mass of silicon oxide, 2.7% by mass of titanium oxide, 1.3% by mass of magnesium hydroxide, 0.9% by mass of calcium carbonate, and the balance was aluminum oxide was obtained. The total amount of impurities contained in the obtained mixed powder was 1% by mass or less.

Next, the obtained mixed powder and solvent were placed in a barrel mill, mixed and pulverized in a wet manner to obtain a slurry. To the resulting slurry, 50 parts by mass of spherical resin was added as a pore-forming material to 100 parts by mass of the mixed powder. As the spherical resin, powdered polyethylene having an average particle diameter of 32.5 μm was used.

Next, the slurry was spray-dried using a spray dryer to obtain granules. The granules were molded by the CIP method at a pressure of 80 MPa, and then cut as necessary to obtain a disc-shaped molded body. The obtained disk-shaped molded body was fired at about 1550° C. in an air atmosphere to obtain a disk-shaped porous body (porous substrate) having a porosity of 35% by volume.

Next, the upper surface (the surface on which the adsorbed material is adsorbed) of the obtained porous substrate was ground. Grinding was performed using a rotary grinder using a diamond grindstone having the grain size number shown in Table 1. The particle size number is defined in JIS R 6001-1:2017 (ISO 8486-1 (MOD)).

Next, a first film containing DLC as a main component was formed on the upper surface of the ground porous substrate. The support part was not used so that the influence of the support part does not have to be taken into account when measuring the airflow resistance.

A first film containing DLC as a main component was formed by the following procedure. The ground porous substrate was placed at a predetermined position in the processing container, and the air was evacuated until the pressure became 1.3 kPa or less. Thereafter, the ground porous substrate is heated to 300° C. in an argon gas atmosphere. Next, high frequency power and negative bias voltage were supplied to the ground porous substrate in an argon gas atmosphere to generate discharge plasma. The top surface of the ground porous substrate was irradiated with ions.

Next, a DLC film-forming raw material gas was supplied into the processing container and discharge plasma was generated to form a film containing DLC as a main component on the upper surface of the ground porous substrate. In this way, samples (sample Nos. 1 to 5) were obtained in which a first film containing DLC as a main component was formed on the upper surface of the ground porous substrate.

The obtained sample No. For Nos. 1 to 5, the arithmetic mean slope angle (RΔa) was measured. The arithmetic mean inclination angle (RΔa) was measured using a shape analysis laser microscope (manufactured by Keyence Corporation, ultra-deep color 3D shape measurement microscope (VK-X1100)) in accordance with JIS B 0601:2001.Specifically. First, the illumination method is coaxial epi-illumination, the magnification is 240 times, there is no cutoff value λs, the cutoff value λc is 0.08 mm, there is no cutoff value λf, there is end effect correction, and the adsorption to be measured is The measurement range per point from the surface was set to 1420 μm x 1070 μm.Then, in each measurement range, four lines to be measured were drawn along the longitudinal direction of the measurement range, and the line roughness was measured. The length of each line to be measured was 1282 μm.The measurement range was set at 6 locations at approximately equal intervals along the circumferential direction, and the number of lines to be measured was 24 in total. The average value of the arithmetic mean inclination angle (RΔa) is the average value of the measured values obtained from these 24 lines.Table 1 shows the average value of the arithmetic mean inclination angle (RΔa) for samples No. 1 to 5. Shown below.

Next, the obtained sample No. The ventilation resistance on the adsorption surface of the first membranes Nos. 1 to 5 was measured. Airflow resistance was measured using the following procedure. First, a rubber pad attached to the tip of a suction tube connected to a vacuum pump was placed on the suction surface of the first membrane. A vacuum gauge is installed in the middle of the suction tube, allowing you to read the reduced pressure value that represents ventilation resistance. The reduced pressure value is displayed as a negative value, and the smaller the absolute value, the lower the ventilation resistance and the higher the cleaning efficiency when backwashing from the back surface toward the suction surface. The rubber pad has a trumpet-shaped suction port that opens on the installation side, and has an opening diameter of 50 mm. After installing the rubber pad on the adsorption surface of the first membrane, the vacuum pump was operated and the reduced pressure value indicated by the vacuum gauge was read. Sample No. Table 1 shows the reduced pressure values for Nos. 1 to 5.

Next, the number of scratches on the back surface of the adsorbed object was measured. First, a disk-shaped porous body (porous substrate) was obtained by the above-described procedure. A support portion having a bottomed annular body capable of accommodating the obtained porous substrate was prepared. Glass was applied to the inner circumferential surface and bottom surface of the bottomed annular body, the porous substrate was housed inside the bottomed annular body (in the recess), and pressure was applied from the thickness (up and down) direction. This pressurized state was maintained at 1200° C. in an air atmosphere for 3 hours to obtain a bonded body in which the porous substrate was bonded to the support portion.

Next, the upper surface (the surface on which the adsorbed object is adsorbed) of the obtained joined body was ground. Grinding was performed using a rotary grinder using a diamond grindstone having the grain size number shown in Table 2. The particle size number is as described above.

Next, a film containing DLC as a main component was formed by the following procedure. The ground joined body was placed at a predetermined position in the processing container, and the vacuum was evacuated until the pressure became 1.3 kPa or less. Thereafter, the ground joined body is heated to 300° C. in an argon gas atmosphere. Next, in an argon gas atmosphere, high frequency power and a negative bias voltage were supplied to the ground bonded body to generate discharge plasma. The top surface of the ground joined body was irradiated with ions.

Next, a DLC film-forming raw material gas was supplied into the processing container and discharge plasma was generated to form a film containing DLC as a main component on the upper surface of the ground bonded body. In this way, samples (sample Nos. 6 to 10) were obtained in which a first film and a second film containing DLC as a main component were formed on the upper surface of the ground joined body.

Next, using a semiconductor wafer as an object to be attracted, after repeating the attachment and detachment of the semiconductor wafer 100 times, the back surface of the semiconductor wafer was visually observed, and the number of visible scratches was counted. Sample No. Table 1 shows the average value of the arithmetic mean slope angle (RΔa) and the number of visible scratches for No. 6 to No. 10. The method for determining the average value of the arithmetic mean slope angle (RΔa) is as described above.

As shown in Tables 1 and 2, sample no. For samples 2 to 4 and 7 to 9, the average value of the arithmetic mean inclination angle (RΔa) is 15° or more and 45° or less. Therefore, sample no. It can be seen that for Nos. 2 to 4 and Nos. 7 to 9, there were few scratches on the back surface of the adsorbed object (semiconductor wafer), ventilation resistance was suppressed, and cleaning efficiency was high.

On the other hand, document no. For Nos. 1 and 6, the average value of the arithmetic mean inclination angle (RΔa) exceeds 45°. Therefore, although the ventilation resistance is suppressed, it can be seen that there are many scratches on the back surface of the semiconductor wafer. Material No. 5 and 10, the average value of the arithmetic mean slope angle (RΔa) is less than 15°. Therefore, although there are few scratches on the back surface of the semiconductor wafer, it can be seen that the ventilation resistance is high and the cleaning efficiency is poor.

1 Adsorption member 2 First membrane 2a Adsorption surface 3 Porous substrate 4 Support part 4a Attachment hole 4b Suction path 4c Groove 41 Bottomed annular body 41a Upper surface of bottomed annular body 41b Outer peripheral surface of bottomed annular body 5 Second membrane 5a Annular surface of second film 5b Outer periphery of second film 10 Inspection device 11 Vacuum pump 12 Irradiation section 13 CCD camera 14 Reflection mirror 15 Image processing section 16 Control section

Claims (10)

a first film having an adsorption surface for adsorbing an object to be adsorbed;
a porous substrate supporting the first membrane;
including;
The average value of the arithmetic mean inclination angle (RΔa) in the roughness curve of the suction surface is 15° or more and 45° or less,
Adsorption member. 2. The method according to claim 1, further comprising: a second film having an annular surface surrounding the adsorption surface; and a support portion having a bottomed annular body supporting the second film and accommodating the porous substrate. Adsorption member. The suction member according to claim 2, wherein the suction surface and the annular surface have semiconductivity. The second film has higher fracture toughness than the bottomed annular body, and the thickness of the outer peripheral part of the second film located on an extension of the outer peripheral surface of the bottomed annular body is greater than the thickness of the first film. The suction member according to claim 2, wherein the suction member is also large. The suction surface has a black color,
There is a positive correlation between the wavelengths at intervals of 10 nm in the wavelength range 360 nm to 740 nm and the reflectance R (λ) of the adsorption surface (where λ is the wavelength (nm) within the wavelength range),
The slope of the regression equation obtained by logarithmic approximation is 2 or less,
The adsorption member according to claim 1 or 2. the annular surface exhibits black color;
The wavelength at every 10 nm interval in the wavelength range 360 nm to 740 nm and the reflectance R (λ) of at least one of the annular surface and the adsorption surface (where λ is the wavelength (nm) within the wavelength range) are positive. have a correlation,
The slope of the regression equation obtained by logarithmic approximation is 2 or less,
The adsorption member according to claim 2. The suction member according to claim 1 or 2, wherein the suction surface has a black color and a color difference within the suction surface is 3 or less (excluding 0). The suction member according to claim 2, wherein the annular surface exhibits a black color, and the color difference within the annular surface is 3 or less (excluding 0). A processing device comprising the suction member according to claim 1 or 2. An inspection device comprising the suction member according to claim 1 or 2.