JP7496821B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7496821B2 JP7496821B2 JP2021525939A JP2021525939A JP7496821B2 JP 7496821 B2 JP7496821 B2 JP 7496821B2 JP 2021525939 A JP2021525939 A JP 2021525939A JP 2021525939 A JP2021525939 A JP 2021525939A JP 7496821 B2 JP7496821 B2 JP 7496821B2
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- lead frame
- semiconductor chip
- semiconductor device
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Description
Claims (8)
- 第1の電源電圧が供給される第1半導体チップと、
前記第1の電源電圧よりも電位が高い第2の電源電圧が供給される第2半導体チップと、
前記第1半導体チップが搭載されるチップ搭載面を有する第1リードフレームと、
前記第2半導体チップが搭載されるチップ搭載面を有する第2リードフレームと、
前記第1半導体チップと前記第2半導体チップを電気的に接続する接続ボンディングワイヤと、
前記第1リードフレームと前記第2リードフレームの間を埋め込んで、前記第1半導体チップ、前記第2半導体チップ、及び、前記第1リードフレームと前記第2リードフレームそれぞれの前記チップ搭載面の周囲を覆って配置された封止樹脂と、
前記封止樹脂よりも絶縁破壊電圧が高い材料からなり、前記第1リードフレームと前記第2リードフレームの相互に対向する領域の表面を、前記第1の電源電圧が印加される低電圧側領域と前記第2の電源電圧が印加される高電圧側領域が対向して近接する近接領域に限り前記封止樹脂の内部で覆い、前記接続ボンディングワイヤを除いた前記第1半導体チップに接続するボンディングワイヤの前記接続ボンディングワイヤと対向する領域を前記近接領域に限り覆う絶縁保護膜と
を備える、半導体装置。 - 前記絶縁保護膜が、前記封止樹脂の内部で前記第1半導体チップ及び前記第1リードフレームと前記接続ボンディングワイヤの相互に対向する領域の表面を前記近接領域に限り更に覆う、請求項1に記載の半導体装置。
- 前記絶縁保護膜の材料が、前記封止樹脂の材料の樹脂よりもフィラーの含有率が相対的に低い樹脂である、請求項1又は2に記載の半導体装置。
- 前記絶縁保護膜が、前記封止樹脂よりも硬度が低い材料である、請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記第1リードフレームと前記第2リードフレームが相互に対向するそれぞれの対向側面と、前記対向側面と連結する他の側面とがなすコーナー部が、R面取りされている、請求項1乃至4のいずれか1項に記載の半導体装置。
- 前記第1リードフレームと前記第2リードフレームが相互に対向するそれぞれの対向側面と、前記対向側面に連結する主面とがなすコーナー部が、R面取りされている、請求項1乃至4のいずれか1項に記載の半導体装置。
- 制御チップ、及び前記制御チップが出力する電気信号を内部で磁力に変換した後に前記磁力を電気信号に変換して出力するトランスチップを前記第1半導体チップとして有し、 前記トランスチップの出力する電気信号が入力する前記第2半導体チップが、前記制御チップに制御されてスイッチング素子を駆動する駆動チップとして動作する、
請求項1乃至6のいずれか1項に記載の半導体装置。 - 前記制御チップと前記駆動チップに挟まれた位置に前記トランスチップが配置され、 前記トランスチップの前記駆動チップと対向する表面、及び、前記トランスチップと前記駆動チップを電気的に接続する前記接続ボンディングワイヤの表面が、前記絶縁保護膜に覆われている、請求項7に記載の半導体装置。
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JP2005005638A (ja) | 2003-04-15 | 2005-01-06 | Fuji Electric Fa Components & Systems Co Ltd | 半導体モジュールおよびその製造方法 |
JP2015050222A (ja) | 2013-08-30 | 2015-03-16 | 株式会社デンソー | 半導体装置 |
JP2016207714A (ja) | 2015-04-16 | 2016-12-08 | ローム株式会社 | 半導体装置 |
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JP2015050222A (ja) | 2013-08-30 | 2015-03-16 | 株式会社デンソー | 半導体装置 |
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