JP7494059B2 - 排気配管装置 - Google Patents
排気配管装置 Download PDFInfo
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- JP7494059B2 JP7494059B2 JP2020143972A JP2020143972A JP7494059B2 JP 7494059 B2 JP7494059 B2 JP 7494059B2 JP 2020143972 A JP2020143972 A JP 2020143972A JP 2020143972 A JP2020143972 A JP 2020143972A JP 7494059 B2 JP7494059 B2 JP 7494059B2
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- 238000001816 cooling Methods 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 34
- 239000000112 cooling gas Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 13
- 239000003507 refrigerant Substances 0.000 claims description 7
- 239000002826 coolant Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 13
- 239000000498 cooling water Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 238000011144 upstream manufacturing Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 8
- 230000002159 abnormal effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N3/00—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust
- F01N3/08—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous
- F01N3/0892—Electric or magnetic treatment, e.g. dissociation of noxious components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2258/00—Sources of waste gases
- B01D2258/02—Other waste gases
- B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2259/00—Type of treatment
- B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
- B01D2259/818—Employing electrical discharges or the generation of a plasma
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N2240/00—Combination or association of two or more different exhaust treating devices, or of at least one such device with an auxiliary device, not covered by indexing codes F01N2230/00 or F01N2250/00, one of the devices being
- F01N2240/28—Combination or association of two or more different exhaust treating devices, or of at least one such device with an auxiliary device, not covered by indexing codes F01N2230/00 or F01N2250/00, one of the devices being a plasma reactor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Toxicology (AREA)
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- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
図1は、第1の実施形態における半導体製造装置の排気系の構成の一例を示す構成図である。図1の例では、半導体製造装置として、成膜装置、例えば、化学気相成長(CVD)装置200を示している。図1の例では、2つの成膜チャンバ202を配置したマルチチャンバ方式のCVD装置200が示されている。CVD装置200では、所望の温度に制御された成膜チャンバ202内に、成膜対象の半導体基板204(204a,204b)を配置する。そして、真空ポンプ400により排気配管150,152を通じて真空引きを行って、調圧バルブ210により所望の圧力に制御された成膜チャンバ202内に原料ガスを供給する。成膜チャンバ202内では、原料ガスの化学反応により所望の膜が基板204上に成膜される。例えば、シラン(SiH4)系のガスを主原料ガスとして導入して、シリコン酸化膜(SiO膜)やシリコン窒化膜(SiN膜)を成膜する。その他、例えば、テトラエトキシシラン(TEOS)ガス等を主原料ガスとして導入して、シリコン酸化膜(SiO膜)を成膜する。これらの膜を成膜する際に、成膜チャンバ202内及び排気配管150,152内には、原料ガスに起因する生成物が堆積する。そのため、成膜プロセスサイクルでは、成膜工程の他にクリーニング工程が実施される。
そして、図2の例においては、内管190の外部側では、凸部10の先端或いはOリング抑え11の高周波電極104側の露出面が高周波電極104と最も近いため、凸部18の先端と高周波電極104との距離L1が、内管190の外部側の凸部10の先端或いはOリング抑え11の高周波電極104側の露出面と高周波電極104との距離L2よりも小さくなるように凸部18が形成されている。凸部10が無い場合には、凸部18の先端と高周波電極104との距離L1が、内管190の外部側のフランジ面と高周波電極104との距離よりも小さくなるように凸部18を配置する。これにより、高周波電極104に高周波電圧を印加した際、凸部18と高周波電極104との間で先に放電が生じる。そのため、大気側での異常放電(アーキング)を起こすほどの電圧まで印加電圧を高める必要はない。よって、大気側での異常放電(アーキング)を起こさずに内管190内部で容量結合によるプラズマを生成することができる。真空側の電極間距離を小さくすることで、アーキングの抑制の他に、さらに、プラズマの着火性や安定性を高めることができる。
第1の実施形態では、高周波電極104との距離が内管190の外部側よりも内部側の方が小さくなるようにグランド電極を配置する構成を説明したが、大気側での異常放電(アーキング)を回避する手法はこれに限るものではない。第2の実施形態では、大気側での金属部分の露出を無くす構成について説明する。また、以下、特に説明しない点は、第1の実施形態と同様である。
具体的には、内管190の外側において高周波電極104の内周面以外を誘電体による高周波電極カバー20で被覆する。また、図5の例では、さらに、内管190の外側において、排気配管150側(上流側)のフランジ19面と凸部10とOリング抑え11とを含むグランド電極の露出面を誘電体によるグランド電極カバー22で被覆する。同様に、内管190の外側において、排気配管152側(下流側)のフランジ19面と凸部10とOリング抑え11とを含むグランド電極の露出面を誘電体によるグランド電極カバー24で被覆する。また、外部管102の内周面を誘電体による外部管カバー26で被覆する。誘電体による各カバーの厚さは、適宜設定すればよい。その他の構成は、図2と同様である。
上述した各実施の形態では、誘電体による内管190の破損に伴うリーク及び大気突入を回避するべく、2重管構造を構成した。かかる誘電体による内管190の破損の原因として内管190の温度上昇が挙げられる。第3の実施形態では、内管190の温度上昇を抑制可能な構成について説明する。また、以下、特に説明しない点は、第1の実施形態と同様である。
Claims (4)
- 成膜チャンバと前記成膜チャンバ内を排気する真空ポンプとの間に配置される排気配管の一部として用いられる排気配管装置であって、
誘電体管と、
前記誘電体管の外周側に配置され、高周波電圧が印加される高周波電極と、
前記誘電体管の端部に配置され、前記高周波電極との距離が前記誘電体管の外部側よりも内部側の方が小さくなるように配置され、グランド電位が印加されるグランド電極と、
前記誘電体管の内側にプラズマを生成させるプラズマ生成回路と、
を備えたことを特徴とする排気配管装置。 - 前記誘電体管の外側で前記高周波電極と前記グランド電極との少なくとも一方を被覆する誘電体をさらに備えたことを特徴とする請求項1記載の排気配管装置。
- 成膜チャンバと前記成膜チャンバ内を排気する真空ポンプとの間に配置される排気配管の一部として用いられる排気配管装置であって、
誘電体管と、
前記誘電体管の外周側に前記誘電体管との間に空間を開けて配置された外部管と、
前記誘電体管の外周側の前記空間に配置され、高周波電圧が印加される高周波電極と、
前記誘電体管の内側にプラズマを生成させるプラズマ生成回路と、
前記外部管と前記誘電体管との間の空間と前記空間内の部材との少なくとも一方に冷媒を導入し前記誘電体管を冷却する冷却機構と、
を備え、
前記外部管にガス導入口及びガス排出口が形成され、
前記冷却機構は、前記外部管のガス導入口及びガス排出口を経由して、前記外部管と前記誘電体管との間の空間に前記冷媒としての冷却ガスを流すことを特徴とする排気配管装置。 - 前記誘電体管の端部側に配置され、内部に空洞が形成されたフランジをさらに備え、
前記冷却機構は、前記フランジ内の空洞を経由して、前記冷媒を導入することを特徴とする請求項3記載の排気配管装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020143972A JP7494059B2 (ja) | 2020-08-27 | 2020-08-27 | 排気配管装置 |
US17/358,202 US11872524B2 (en) | 2020-08-27 | 2021-06-25 | Exhaust pipe device |
CN202110999826.3A CN114107951B (zh) | 2020-08-27 | 2021-08-23 | 排气管装置 |
KR1020210110828A KR102640570B1 (ko) | 2020-08-27 | 2021-08-23 | 배기 파이프 장치 |
Applications Claiming Priority (1)
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US11872524B2 (en) | 2024-01-16 |
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