JP7490021B2 - 太陽電池および光起電力モジュール - Google Patents
太陽電池および光起電力モジュール Download PDFInfo
- Publication number
- JP7490021B2 JP7490021B2 JP2022108836A JP2022108836A JP7490021B2 JP 7490021 B2 JP7490021 B2 JP 7490021B2 JP 2022108836 A JP2022108836 A JP 2022108836A JP 2022108836 A JP2022108836 A JP 2022108836A JP 7490021 B2 JP7490021 B2 JP 7490021B2
- Authority
- JP
- Japan
- Prior art keywords
- doping
- substrate
- region
- concentration
- doping element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims description 164
- 238000002161 passivation Methods 0.000 claims description 133
- 230000004913 activation Effects 0.000 claims description 60
- 229910052698 phosphorus Inorganic materials 0.000 claims description 57
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 54
- 239000011574 phosphorus Substances 0.000 claims description 54
- 230000007423 decrease Effects 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 152
- 239000010408 film Substances 0.000 description 57
- 125000004429 atom Chemical group 0.000 description 56
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 29
- 238000000034 method Methods 0.000 description 25
- 229910052796 boron Inorganic materials 0.000 description 22
- 230000008569 process Effects 0.000 description 19
- 238000009826 distribution Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 16
- 239000002344 surface layer Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 230000001965 increasing effect Effects 0.000 description 11
- 150000003017 phosphorus Chemical class 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 150000001638 boron Chemical class 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 125000004437 phosphorous atom Chemical group 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910008065 Si-SiO Inorganic materials 0.000 description 2
- 229910020216 SiOx-Si Inorganic materials 0.000 description 2
- 229910006405 Si—SiO Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910052950 sphalerite Inorganic materials 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018537 Si SiOx Inorganic materials 0.000 description 1
- 229910008059 Si-SiOx Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006397 Si—SiOx Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (12)
- 基板(10)と、
前記基板(10)の裏面に順次設けられるトンネル層(121)、フィールドパッシベーション層(122)、第1パッシベーション膜(123)と、前記第1パッシベーション膜(123)を貫通して前記フィールドパッシベーション層(122)と接触する第1電極(124)とを備え、
ここで、前記基板(10)、前記トンネル層(121)と前記フィールドパッシベーション層(122)はいずれも同じ第1ドーピング元素を含み、前記第1ドーピング元素はリン元素であり、且つ前記トンネル層(121)における前記第1ドーピング元素のドーピング濃度は前記フィールドパッシベーション層(122)における前記第1ドーピング元素のドーピング濃度より小さく、前記トンネル層(121)における前記第1ドーピング元素のドーピング濃度は前記基板(10)における前記第1ドーピング元素のドーピング濃度より大きく、
前記フィールドパッシベーション層(122)は第1ドープされた領域と第2ドープされた領域を含み、前記第2ドープされた領域は前記第1ドープされた領域よりも前記トンネル層(121)に近く、ここで、前記第1ドープされた領域のドーピング曲線の傾きは前記第2ドープされた領域のドーピング曲線の傾きより大きく、前記第1ドーピング元素が焼なましによって活性化されてから、活性化された第1ドーピング元素を得ており、前記ドーピング曲線の傾きは、活性化された第1ドーピング元素のドーピング濃度がドーピングの深さに従って変化する曲線の傾きであり、
前記第1ドープされた領域のドーピング曲線の傾きは5×10 18 atoms/cm 3 ・nm~1×10 19 atoms/cm 3 ・nmであり、前記第2ドープされた領域のドーピング曲線の傾きは-5×10 18 atoms/cm 3 ・nm~5×10 18 atoms/cm 3 ・nmであり、
前記トンネル層(121)においては、前記基板(10)に近づいていくに従って、前記トンネル層(121)のドーピング曲線の傾きが次第に減少し、前記基板(10)においては、前記トンネル層(121)から離れていくに従って、前記基板(10)のドーピング曲線の傾きが次第に増加して、安定してくる傾向がある、
ことを特徴とする太陽電池。 - 前記基板(10)のドーピング曲線の傾きは前記第2ドープされた領域のドーピング曲線の傾きの平均値以下である、ことを特徴とする請求項1に記載の太陽電池。
- 前記フィールドパッシベーション層(122)における前記活性化された第1ドーピング元素のドーピング濃度は1×1020atom/cm3~5×1020atom/cm3であり、前記フィールドパッシベーション層(122)における前記第1ドーピング元素の活性化率は50%~70%であり、前記活性化率は前記活性化された第1ドーピング元素のドーピング濃度と裏面に全注入された前記第1ドーピング元素の濃度の比率である、ことを特徴とする請求項1に記載の太陽電池。
- 前記トンネル層(121)のドーピング曲線の傾きは-2.5×1019 atoms/cm 3 ・nm~-2.5×1018 atoms/cm 3 ・nmであり、前記基板(10)のドーピング曲線の傾きは-2.5×1019 atoms/cm 3 ・nm~0atoms/cm 3 ・nmである、ことを特徴とする請求項1に記載の太陽電池。
- 前記基板(10)の表面に垂直な方向において、前記フィールドパッシベーション層(122)の厚さは60nm~130nmであり、前記トンネル層(121)の厚さは0.5nm~3nmである、ことを特徴とする請求項1に記載の太陽電池。
- 前記太陽電池は、前記基板(10)の上面に順次設けられたエミッタ(111)と、第2パッシベーション膜(112)と、第2パッシベーション膜(112)を貫通してエミッタ(111)と接触する第2電極(114)とをさらに含み、ここで、前記基板(10)は第2ドーピング元素をさらに含む、ことを特徴とする請求項1に記載の太陽電池。
- 前記第2ドーピング元素に対して焼なまし活性化を行った後、活性化された第2ドーピング元素を得ており、前記基板(10)の上面における前記活性化された第2ドーピング元素のドーピング濃度は5×1018atom/cm3~1.5×1019atom/cm3であり、
前記基板(10)の上面における前記第2ドーピング元素の全注入濃度は1.5×1019atom/cm3~1×1020atom/cm3である、
ことを特徴とする請求項6に記載の太陽電池。 - 前記基板(10)の上面が前記基板(10)の裏面に向かう方向において、前記基板(10)は第1領域、第2領域及び第3領域を含み、ここで、前記第2領域は前記第1領域と前記第3領域の間に位置し、前記第1領域は前記第2領域よりも前記基板(10)の上面に近く、前記第3領域は前記第2領域よりも前記基板(10)の裏面に近く、
前記第2領域おける前記第2ドーピング元素のドーピング濃度および前記第3領域における前記第2ドーピング元素のドーピング濃度はいずれも前記第1領域における前記第2ドーピング元素のドーピング濃度より小さい、
ことを特徴とする請求項7に記載の太陽電池。 - 前記第1領域における前記活性化された第2ドーピング元素のドーピング濃度は5×1018atom/cm3~1.5×1019atom/cm3である、
ことを特徴とする請求項8に記載の太陽電池。 - 前記第1領域の底面と前記基板(10)の上面との距離は350nm~450nmであり、
前記第2領域の底面と前記基板(10)の上面との距離は1000nm~1200nmであり、
前記第3領域の底面と前記基板(10)の上面との距離は1200nm~1600nmである、
ことを特徴とする請求項8に記載の太陽電池。 - 前記第1領域における前記第2ドーピング元素の活性化確率は20%~40%であり、
前記第2領域における前記第2ドーピング元素の活性化確率は60%~90%であり、
前記第3領域における前記第2ドーピング元素の活性化確率は5%~90%であり、
前記活性化確率は活性化された第2ドーピング元素のドーピング濃度と全注入された前記第2ドーピング元素の濃度の比率である、
ことを特徴とする請求項8に記載の太陽電池。 - 請求項1~11のいずれか1項に記載の太陽電池で複数接続されたセルストリング(101)と、
前記セルストリング(101)の表面を覆うための封止層(102)と、
前記封止層(102)の前記セルストリング(101)から離れた表面を覆うためのカバープレート(103)と、を備える、
ことを特徴とする光起電力モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023056857A JP7515650B2 (ja) | 2022-06-01 | 2023-03-31 | 太陽電池および光起電力モジュール |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210611083.2A CN114695579B (zh) | 2022-06-01 | 2022-06-01 | 太阳能电池及光伏组件 |
CN202210611082.8 | 2022-06-01 | ||
CN202210611082.8A CN114695578B (zh) | 2022-06-01 | 2022-06-01 | 太阳能电池及光伏组件 |
CN202210611083.2 | 2022-06-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023056857A Division JP7515650B2 (ja) | 2022-06-01 | 2023-03-31 | 太陽電池および光起電力モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023177189A JP2023177189A (ja) | 2023-12-13 |
JP7490021B2 true JP7490021B2 (ja) | 2024-05-24 |
Family
ID=82321331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022108836A Active JP7490021B2 (ja) | 2022-06-01 | 2022-07-06 | 太陽電池および光起電力モジュール |
Country Status (8)
Country | Link |
---|---|
US (1) | US20230395740A1 (ja) |
EP (1) | EP4287267A1 (ja) |
JP (1) | JP7490021B2 (ja) |
AU (1) | AU2022204658B1 (ja) |
DE (1) | DE202022106692U1 (ja) |
FR (1) | FR3136316B3 (ja) |
GB (2) | GB2611203B (ja) |
NL (1) | NL2033699B1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010533969A (ja) | 2007-07-18 | 2010-10-28 | アイメック | エミッタ構造の作製方法とその結果のエミッタ構造 |
JP2017208569A (ja) | 2014-11-28 | 2017-11-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103199152B (zh) * | 2013-03-11 | 2016-05-25 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅片的磷扩散方法 |
CN103618028B (zh) * | 2013-11-15 | 2016-06-15 | 中电电气(南京)光伏有限公司 | 一种制备具有表面钝化的pn结和晶体硅太阳能电池的方法和设备 |
KR102272433B1 (ko) * | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
NL2018356B1 (en) * | 2017-02-10 | 2018-09-21 | Tempress Ip B V | A method of manufacturing a passivated solar cell and resulting passivated solar cell |
NL2019614B1 (en) * | 2017-09-22 | 2019-04-17 | Tno | Dopant enhanced solar cell and method of manufacturing thereof |
JP2020167238A (ja) * | 2019-03-28 | 2020-10-08 | パナソニック株式会社 | 太陽電池セルおよび太陽電池モジュール |
CN111509057A (zh) * | 2020-04-30 | 2020-08-07 | 常州时创能源股份有限公司 | 一种n型电池及其制备方法 |
CN111883420A (zh) * | 2020-08-05 | 2020-11-03 | 中国科学院半导体研究所 | 提高晶硅表层掺磷、掺硼激活率的热扩散方法 |
CN113035969A (zh) * | 2021-02-04 | 2021-06-25 | 江苏杰太光电技术有限公司 | 一种TOPCon电池梯度掺杂非晶硅钝化结构及制备方法 |
CN113555469B (zh) * | 2021-07-21 | 2024-05-10 | 苏州腾晖光伏技术有限公司 | 一种背部钝化接触结构及其制备方法、太阳能电池 |
CN115394881A (zh) * | 2022-09-30 | 2022-11-25 | 滁州捷泰新能源科技有限公司 | 一种磷浓度梯度分布的topcon电池及其制作方法 |
-
2022
- 2022-06-27 EP EP22181369.4A patent/EP4287267A1/en active Pending
- 2022-06-29 AU AU2022204658A patent/AU2022204658B1/en active Active
- 2022-07-06 JP JP2022108836A patent/JP7490021B2/ja active Active
- 2022-07-07 US US17/859,975 patent/US20230395740A1/en active Pending
- 2022-11-29 DE DE202022106692.2U patent/DE202022106692U1/de active Active
- 2022-11-30 FR FR2212572A patent/FR3136316B3/fr active Active
- 2022-11-30 GB GB2218026.9A patent/GB2611203B/en active Active
- 2022-11-30 GB GB2312290.6A patent/GB2617526A/en active Pending
- 2022-12-09 NL NL2033699A patent/NL2033699B1/en active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010533969A (ja) | 2007-07-18 | 2010-10-28 | アイメック | エミッタ構造の作製方法とその結果のエミッタ構造 |
JP2017208569A (ja) | 2014-11-28 | 2017-11-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
Non-Patent Citations (5)
Title |
---|
LANTERNE,Adeline et al.,"Solar-grade boron emitters by BF3 plasma doping and role of the co-implanted fluorine",Progress in Photovoltaics,2016年,Vol.24,pp.348-356 |
LI,Qiang et al.,"Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells",Solar Energy,2016年,Vol.135,pp.487-492 |
ROHATGI,Ajeet et al.,"Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact",IEEE JOURNAL OF PHOTOVOLTAICS,2017年,Vol.7,pp.1236-1243 |
SHENG,Jian et al.,"Impact of phosphorus diffusion on n-type poly-Si based passivated contact silicon solar cells,Solar Energy Materials and Solar Cells",2019年,Vol.203,Article number:110120,pp.1-8 |
WILKES,George C.et al.,"Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells",IEEE JOURNAL OF PHOTOVOLTAICS,2020年,Vol.10,pp.1283-1289 |
Also Published As
Publication number | Publication date |
---|---|
FR3136316A3 (fr) | 2023-12-08 |
GB2611203A8 (en) | 2023-04-26 |
GB202218026D0 (en) | 2023-01-11 |
US20230395740A1 (en) | 2023-12-07 |
DE202022106692U1 (de) | 2022-12-13 |
JP2023177189A (ja) | 2023-12-13 |
FR3136316B3 (fr) | 2024-06-14 |
NL2033699A (en) | 2023-12-12 |
GB2611203B (en) | 2023-09-27 |
NL2033699B1 (en) | 2024-01-30 |
EP4287267A1 (en) | 2023-12-06 |
AU2022204658B1 (en) | 2023-11-23 |
GB202312290D0 (en) | 2023-09-27 |
GB2611203A (en) | 2023-03-29 |
GB2617526A (en) | 2023-10-11 |
JP2023177241A (ja) | 2023-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN114242803B (zh) | 太阳能电池及其制备方法、光伏组件 | |
US11735675B2 (en) | Solar cell and photovoltaic module | |
CN116722051A (zh) | 太阳能电池及制备方法、光伏组件 | |
JP7427833B1 (ja) | 太陽電池及びその製造方法、太陽光発電モジュール | |
AU2023255047A1 (en) | Photovoltaic cell, method for manufacturing same, and photovoltaic module | |
JP7515650B2 (ja) | 太陽電池および光起電力モジュール | |
JP7490021B2 (ja) | 太陽電池および光起電力モジュール | |
KR20160063009A (ko) | 태양 전지 | |
CN114695579B (zh) | 太阳能电池及光伏组件 | |
CN114695578B (zh) | 太阳能电池及光伏组件 | |
CN115172478B (zh) | 太阳能电池及光伏组件 | |
AU2022204349B1 (en) | Solar cell and production method thereof, photovoltaic module | |
CN117976736A (zh) | 太阳能电池和太阳能电池的制造方法 | |
TW201929241A (zh) | 太陽能電池 | |
KR20160005569A (ko) | 태양 전지의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220711 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20220711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221020 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20221202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230403 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230410 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20230519 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240514 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7490021 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |