JP7488796B2 - フォーカスリング載置台 - Google Patents
フォーカスリング載置台 Download PDFInfo
- Publication number
- JP7488796B2 JP7488796B2 JP2021097248A JP2021097248A JP7488796B2 JP 7488796 B2 JP7488796 B2 JP 7488796B2 JP 2021097248 A JP2021097248 A JP 2021097248A JP 2021097248 A JP2021097248 A JP 2021097248A JP 7488796 B2 JP7488796 B2 JP 7488796B2
- Authority
- JP
- Japan
- Prior art keywords
- protective material
- adhesive sheet
- adhesive
- wafer
- focus ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims description 115
- 239000000853 adhesive Substances 0.000 claims description 101
- 230000001070 adhesive effect Effects 0.000 claims description 101
- 230000001681 protective effect Effects 0.000 claims description 95
- 239000000919 ceramic Substances 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 235000012431 wafers Nutrition 0.000 description 58
- 238000001816 cooling Methods 0.000 description 41
- 238000010438 heat treatment Methods 0.000 description 14
- 239000002826 coolant Substances 0.000 description 12
- 239000000945 filler Substances 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 8
- 229920002050 silicone resin Polymers 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2007—Holding mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
フォーカスリングが載置される円環状のセラミックヒータと、
金属ベースと、
前記金属ベースと前記セラミックヒータとを接着する接着材と、
前記金属ベースと前記セラミックヒータとの間で前記接着材の内周部に接着するように設けられた内周側保護材と、
前記金属ベースと前記セラミックヒータとの間で前記接着材の外周部に接着するように設けられた外周側保護材と、
を備え、
前記接着材の熱膨張係数は、前記内周側保護材の熱膨張係数以下で、前記外周側保護材の熱膨張係数以上である。
Claims (3)
- フォーカスリングが載置される円環状のセラミックヒータと、
金属ベースと、
前記金属ベースと前記セラミックヒータとを接着する接着材と、
前記金属ベースと前記セラミックヒータとの間で前記接着材の内周部に接着するように設けられた内周側保護材と、
前記金属ベースと前記セラミックヒータとの間で前記接着材の外周部に接着するように設けられた外周側保護材と、
を備え、
前記接着材の熱膨張係数は、前記内周側保護材の熱膨張係数以下で、前記外周側保護材の熱膨張係数以上である、
フォーカスリング載置台。 - 前記接着材の熱膨張係数は、前記内周側保護材の熱膨張係数よりも小さく、前記外周側保護材の熱膨張係数よりも大きい、
請求項1に記載のフォーカスリング載置台。 - 前記金属ベースは、前記金属ベースの側面及び前記セラミックヒータに対向する面のうち少なくとも前記内周側保護材及び前記外周側保護材が形成されている部分に絶縁膜を有する、
請求項1又は2に記載のフォーカスリング載置台。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021097248A JP7488796B2 (ja) | 2021-06-10 | 2021-06-10 | フォーカスリング載置台 |
KR1020220052960A KR102639968B1 (ko) | 2021-06-10 | 2022-04-28 | 포커스링 배치대 |
US17/661,293 US20220399190A1 (en) | 2021-06-10 | 2022-04-29 | Focus ring placement table |
CN202210501337.5A CN115472548A (zh) | 2021-06-10 | 2022-05-09 | 聚焦环载置台 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021097248A JP7488796B2 (ja) | 2021-06-10 | 2021-06-10 | フォーカスリング載置台 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022188946A JP2022188946A (ja) | 2022-12-22 |
JP7488796B2 true JP7488796B2 (ja) | 2024-05-22 |
Family
ID=84363474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021097248A Active JP7488796B2 (ja) | 2021-06-10 | 2021-06-10 | フォーカスリング載置台 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220399190A1 (ja) |
JP (1) | JP7488796B2 (ja) |
KR (1) | KR102639968B1 (ja) |
CN (1) | CN115472548A (ja) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033181A (ja) | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | 処理装置 |
JP2006080389A (ja) | 2004-09-10 | 2006-03-23 | Kyocera Corp | ウェハ支持部材 |
JP2007194616A (ja) | 2005-12-22 | 2007-08-02 | Kyocera Corp | サセプタおよびこれを用いたウェハの処理方法 |
JP2014150104A (ja) | 2013-01-31 | 2014-08-21 | Tokyo Electron Ltd | 載置台及びプラズマ処理装置 |
JP6108051B1 (ja) | 2015-09-25 | 2017-04-05 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2017224710A (ja) | 2016-06-15 | 2017-12-21 | 日本特殊陶業株式会社 | 保持装置の製造方法 |
JP2020119997A (ja) | 2019-01-24 | 2020-08-06 | 東京エレクトロン株式会社 | 載置台、基板処理装置及び保護方法 |
US20210020488A1 (en) | 2019-07-15 | 2021-01-21 | Semes Co., Ltd. | Wafer support unit and wafer treatment system including the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6001402B2 (ja) * | 2012-09-28 | 2016-10-05 | 日本特殊陶業株式会社 | 静電チャック |
JP6530228B2 (ja) | 2015-04-28 | 2019-06-12 | 日本特殊陶業株式会社 | 静電チャック |
-
2021
- 2021-06-10 JP JP2021097248A patent/JP7488796B2/ja active Active
-
2022
- 2022-04-28 KR KR1020220052960A patent/KR102639968B1/ko active IP Right Grant
- 2022-04-29 US US17/661,293 patent/US20220399190A1/en active Pending
- 2022-05-09 CN CN202210501337.5A patent/CN115472548A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033181A (ja) | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | 処理装置 |
JP2006080389A (ja) | 2004-09-10 | 2006-03-23 | Kyocera Corp | ウェハ支持部材 |
JP2007194616A (ja) | 2005-12-22 | 2007-08-02 | Kyocera Corp | サセプタおよびこれを用いたウェハの処理方法 |
JP2014150104A (ja) | 2013-01-31 | 2014-08-21 | Tokyo Electron Ltd | 載置台及びプラズマ処理装置 |
JP6108051B1 (ja) | 2015-09-25 | 2017-04-05 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2017224710A (ja) | 2016-06-15 | 2017-12-21 | 日本特殊陶業株式会社 | 保持装置の製造方法 |
JP2020119997A (ja) | 2019-01-24 | 2020-08-06 | 東京エレクトロン株式会社 | 載置台、基板処理装置及び保護方法 |
US20210020488A1 (en) | 2019-07-15 | 2021-01-21 | Semes Co., Ltd. | Wafer support unit and wafer treatment system including the same |
Also Published As
Publication number | Publication date |
---|---|
CN115472548A (zh) | 2022-12-13 |
JP2022188946A (ja) | 2022-12-22 |
US20220399190A1 (en) | 2022-12-15 |
KR20220166714A (ko) | 2022-12-19 |
KR102639968B1 (ko) | 2024-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7651571B2 (en) | Susceptor | |
JP5035884B2 (ja) | 熱伝導シート及びこれを用いた被処理基板の載置装置 | |
CN110770891B (zh) | 静电卡盘及其制法 | |
US8454027B2 (en) | Adjustable thermal contact between an electrostatic chuck and a hot edge ring by clocking a coupling ring | |
US8125757B2 (en) | Wafer support device and component used for the same | |
WO2020054682A1 (ja) | ウエハ載置装置 | |
TW201724345A (zh) | 靜電卡盤裝置 | |
TWI647784B (zh) | 用於彈性材料帶之安裝固定架 | |
JP4451098B2 (ja) | サセプタ装置 | |
KR20100063800A (ko) | 플라즈마 성막 장치 | |
JP3225492U (ja) | プラズマエッチングチャンバ内の汚染を低減する装置 | |
JP3162873U (ja) | プラズマ処理装置の交換可能な上側チャンバ部 | |
JP7488796B2 (ja) | フォーカスリング載置台 | |
US6479410B2 (en) | Processing method for object to be processed including a pre-coating step to seal fluorine | |
JP7488795B2 (ja) | 半導体製造装置用部材 | |
CN109962031B (zh) | 一种受保护的静电吸盘及其应用 | |
TWI618183B (zh) | 電漿處理裝置及其靜電夾盤 | |
KR20150044371A (ko) | 미세-홈 형성된 비-점착성 표면을 갖는 설치 픽스처 | |
JP2021111672A (ja) | 載置台およびプラズマ処理装置 | |
KR20190111763A (ko) | 기판 고정 장치 | |
WO2021111771A1 (ja) | セラミックヒータ | |
JP2005264177A (ja) | スパッタリング装置およびスパッタリング装置のアッパシールド位置調整方法 | |
WO2023033339A1 (ko) | 반도체 웨이퍼 제조 장치 및 그 내식성 향상 방법 | |
KR20240097809A (ko) | 반도체 웨이퍼 제조 장치의 내식성 향상 방법 | |
JP7039688B2 (ja) | プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230119 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240129 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240507 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240510 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7488796 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |