JP7483618B2 - 高出力システムのためのbnnt熱管理材料 - Google Patents
高出力システムのためのbnnt熱管理材料 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims description 241
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 52
- 229910052796 boron Inorganic materials 0.000 claims description 52
- 239000011159 matrix material Substances 0.000 claims description 51
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
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- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- 150000007513 acids Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- NLCKLZIHJQEMCU-UHFFFAOYSA-N cyano prop-2-enoate Chemical class C=CC(=O)OC#N NLCKLZIHJQEMCU-UHFFFAOYSA-N 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 235000009161 Espostoa lanata Nutrition 0.000 description 1
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241000133231 Marshallia caespitosa Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
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- 125000003158 alcohol group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical class CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0648—After-treatment, e.g. grinding, purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/13—Nanotubes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本出願は、2018年2月19日に出願された米国仮特許出願第62/632,349号の優先権を主張するものであり、その内容全体を参照により本明細書に明示的に援用する。
Claims (7)
- BNNT強化熱界面材料の製造方法であって、
合成したままのBNNT材料を精製して、残留ホウ素粒子含有量が20重量%以上ではない精製BNNT材料を形成する工程と、
前記精製BNNT材料を解凝集して解凝集BNNT材料を形成する工程と、
前記解凝集BNNT材料及びマイクロフィラーをポリマーマトリックス材料中に分散する工程と、
を含み、
前記ポリマーマトリックス材料中に分散された状態のBNNT中の凝集の1%未満は2つの次元の寸法が300μmを超え、
該BNNT中の凝集の5%未満は、2つの次元の寸法が200μmを超え、
該BNNT中の凝集の10%未満は、2つの次元の寸法が150μmを超え、
前記凝集の割合は、該BNNTの10X以上の倍率の光学画像に基づく凝集サイズ分布から決定され、
該BNNTにおける欠陥の個数は、直径の100倍の長さにつき1個未満であり、
前記合成したままのBNNT材料を精製する工程は、前記合成したままのBNNT材料を、不活性ガス中で、500℃~650℃の第1温度で3分~12時間の第1期間加熱することによって、ホウ素粒子を除去することを含む、
方法。 - 前記合成したままのBNNT材料を精製する工程は、前記精製BNNT材料の残留h-BN同素体含有量が20%以上とならないように、h-BN同素体を除去する工程を更に含む、請求項1に記載の方法。
- 前記合成したままのBNNT材料を、650℃~800℃の第2温度で3分~12時間の第2期間加熱することによって、h-BN同素体粒子を除去することを更に含む、請求項1に記載の方法。
- 前記ポリマーマトリックス材料中に分散する工程の前に、前記解凝集BNNT材料を凍結乾燥することを更に含む、請求項1に記載の方法。
- 前記ポリマーマトリックス材料中に分散する工程の前に、少なくとも1つの官能基を前記解凝集BNNTの表面に追加することを更に含む、請求項1に記載の方法。
- 前記マイクロフィラーは50重量%~90重量%を構成する、請求項1に記載の方法。
- 前記精製及び解凝集BNNT材料は、0.1重量%~30重量%を構成する、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862632349P | 2018-02-19 | 2018-02-19 | |
US62/632,349 | 2018-02-19 | ||
PCT/US2019/018547 WO2019161374A1 (en) | 2018-02-19 | 2019-02-19 | Bnnt thermal management materials for high-power systems |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021513952A JP2021513952A (ja) | 2021-06-03 |
JPWO2019161374A5 JPWO2019161374A5 (ja) | 2022-03-02 |
JP7483618B2 true JP7483618B2 (ja) | 2024-05-15 |
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US20070241303A1 (en) * | 1999-08-31 | 2007-10-18 | General Electric Company | Thermally conductive composition and method for preparing the same |
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EP2986557B1 (en) * | 2013-04-18 | 2023-03-08 | National Research Council of Canada | Process for the production of boron nitride nanotubes |
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AU2015249316B2 (en) | 2014-04-24 | 2017-03-30 | Bnnt, Llc | Continuous boron nitride nanotube fibers |
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EP3297951B1 (en) | 2015-05-21 | 2023-02-22 | Bnnt, Llc | Boron nitride nanotube synthesis via direct induction |
US10246623B2 (en) * | 2016-09-21 | 2019-04-02 | NAiEEL Technology | Resin composition, article prepared by using the same, and method of preparing the same |
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JP2007137720A (ja) | 2005-11-18 | 2007-06-07 | Teijin Ltd | 窒化ホウ素ナノチューブ含有ポリマー分散液 |
JP2007145677A (ja) | 2005-11-30 | 2007-06-14 | Teijin Ltd | 芳香族ポリアミドにより被覆された窒化ホウ素ナノチューブ |
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CA3090803A1 (en) | 2019-08-22 |
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US10844262B2 (en) | 2020-11-24 |
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AU2019222583A1 (en) | 2020-09-03 |
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