JP7473667B2 - リフレクタ膜の成長方法 - Google Patents
リフレクタ膜の成長方法 Download PDFInfo
- Publication number
- JP7473667B2 JP7473667B2 JP2022554609A JP2022554609A JP7473667B2 JP 7473667 B2 JP7473667 B2 JP 7473667B2 JP 2022554609 A JP2022554609 A JP 2022554609A JP 2022554609 A JP2022554609 A JP 2022554609A JP 7473667 B2 JP7473667 B2 JP 7473667B2
- Authority
- JP
- Japan
- Prior art keywords
- liner
- reflector layer
- substrate
- forming
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 79
- 239000000758 substrate Substances 0.000 claims description 96
- 238000012545 processing Methods 0.000 claims description 80
- 229910052782 aluminium Inorganic materials 0.000 claims description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 27
- 239000010936 titanium Substances 0.000 claims description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims description 18
- 239000011733 molybdenum Substances 0.000 claims description 18
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 18
- 239000003966 growth inhibitor Substances 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 239000010941 cobalt Substances 0.000 claims description 11
- 229910017052 cobalt Inorganic materials 0.000 claims description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 9
- WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical compound FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 claims description 8
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 7
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 7
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 claims description 6
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 6
- PPWNCLVNXGCGAF-UHFFFAOYSA-N 3,3-dimethylbut-1-yne Chemical group CC(C)(C)C#C PPWNCLVNXGCGAF-UHFFFAOYSA-N 0.000 claims description 5
- 229910021592 Copper(II) chloride Inorganic materials 0.000 claims description 5
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 claims description 5
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 5
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims description 4
- JCFNAADCQWXIJD-UHFFFAOYSA-L dioxomolybdenum(2+);dichloride Chemical compound Cl[Mo](Cl)(=O)=O JCFNAADCQWXIJD-UHFFFAOYSA-L 0.000 claims description 4
- WIDQNNDDTXUPAN-UHFFFAOYSA-I tungsten(v) chloride Chemical compound Cl[W](Cl)(Cl)(Cl)Cl WIDQNNDDTXUPAN-UHFFFAOYSA-I 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- QOZWKQQNRNOUAR-UHFFFAOYSA-N trimethyl-(2-methyl-4-trimethylsilylcyclohexa-2,5-dien-1-yl)silane Chemical compound CC1=CC([Si](C)(C)C)C=CC1[Si](C)(C)C QOZWKQQNRNOUAR-UHFFFAOYSA-N 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 229910015221 MoCl5 Inorganic materials 0.000 claims 1
- 229910004537 TaCl5 Inorganic materials 0.000 claims 1
- 229910003074 TiCl4 Inorganic materials 0.000 claims 1
- ASLHVQCNFUOEEN-UHFFFAOYSA-N dioxomolybdenum;dihydrochloride Chemical compound Cl.Cl.O=[Mo]=O ASLHVQCNFUOEEN-UHFFFAOYSA-N 0.000 claims 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims 1
- 239000010408 film Substances 0.000 description 45
- 238000005229 chemical vapour deposition Methods 0.000 description 33
- 239000002243 precursor Substances 0.000 description 24
- 230000008021 deposition Effects 0.000 description 22
- 230000008569 process Effects 0.000 description 22
- 238000000231 atomic layer deposition Methods 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 20
- 239000000463 material Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000002955 isolation Methods 0.000 description 8
- 238000011068 loading method Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000012691 Cu precursor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007420 reactivation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing & Machinery (AREA)
Description
Claims (18)
- リフレクタ膜スタックを形成する方法であって、
基板上にライナを形成すること;及び
前記ライナ上にリフレクタ層を形成することであって、前記リフレクタ層がその間に酸素に曝露されることなく前記ライナと同じ処理ツール内で形成される、形成すること
を含み、
前記ライナが、チタンを含み、TiCl 4 、テトラキス(ジメチルアミノ)チタン(TDMAT)、又は1-メチル-3,6-ビス(トリメチルシリル)-1,4-シクロヘキサジエンを使用して堆積され、前記リフレクタ層が、アルミニウム、タングステン、モリブデン、又は銅のうちの1つ以上を含む、方法。 - リフレクタ膜スタックを形成する方法であって、
基板上にライナを形成すること;及び
前記ライナ上にリフレクタ層を形成することであって、前記リフレクタ層がその間に酸素に曝露されることなく前記ライナと同じ処理ツール内で形成される、形成すること
を含み、
前記ライナが、タンタルを含み、TaCl5又はペンタキス(ジメチルアミノ)タンタル(PDMAT)のうちの1つ以上を使用して堆積され、前記リフレクタ層が、アルミニウム、タングステン、モリブデン、又は銅のうちの1つ以上を含む、方法。 - リフレクタ膜スタックを形成する方法であって、
基板上にライナを形成すること;及び
前記ライナ上にリフレクタ層を形成することであって、前記リフレクタ層がその間に酸素に曝露されることなく前記ライナと同じ処理ツール内で形成される、形成すること
を含み、
前記ライナが、コバルトを含み、ジコバルトヘキサカルボニルtert-ブチルアセチレン(CCTBA)を使用して堆積され、前記リフレクタ層が、アルミニウム、タングステン、モリブデン、又は銅のうちの1つ以上を含む、方法。 - リフレクタ膜スタックを形成する方法であって、
基板上にライナを形成すること;及び
前記ライナ上にリフレクタ層を形成することであって、前記リフレクタ層がその間に酸素に曝露されることなく前記ライナと同じ処理ツール内で形成される、形成すること
を含み、
前記ライナが、ニッケルを含み、テトラキス(トリフルオロホスフィン)ニッケル(Ni(PF3)4)を使用して堆積され、前記リフレクタ層が、アルミニウム、タングステン、モリブデン、又は銅のうちの1つ以上を含む、方法。 - リフレクタ膜スタックを形成する方法であって、
基板上にライナを形成すること;及び
前記ライナ上にリフレクタ層を形成することであって、前記リフレクタ層がその間に酸素に曝露されることなく前記ライナと同じ処理ツール内で形成される、形成すること
を含み、
前記ライナが、アルミニウムを含み、ジメチルアルミニウムヒドリド(DMAH)、トリエチルアルミニウム(TEA)、又はトリメチルアルミニウム(TMA)のうちの1つ以上を使用して堆積され、前記リフレクタ層が、アルミニウム、タングステン、モリブデン、又は銅のうちの1つ以上を含む、方法。 - リフレクタ膜スタックを形成する方法であって、
基板上にライナを形成すること;及び
前記ライナ上にリフレクタ層を形成することであって、前記リフレクタ層がその間に酸素に曝露されることなく前記ライナと同じ処理ツール内で形成される、形成すること
を含み、
前記ライナが、コバルトを含み、ジコバルトヘキサカルボニルtert-ブチルアセチレン(CCTBA)を使用して堆積され、前記ライナが30Åから50Åの範囲の厚さを有する、方法。 - リフレクタ膜スタックを形成する方法であって、
基板上にライナを形成すること;及び
前記ライナ上にリフレクタ層を形成することであって、前記リフレクタ層がその間に酸素に曝露されることなく前記ライナと同じ処理ツール内で形成される、形成すること
を含み、
前記ライナが、ニッケルを含み、テトラキス(トリフルオロホスフィン)ニッケル(Ni(PF 3 ) 4 )を使用して堆積され、前記ライナが30Åから50Åの範囲の厚さを有する、方法。 - 前記リフレクタ層が、前記ライナとは異なる組成を有する、請求項1から5のいずれか一項に記載の方法。
- 前記リフレクタ層が、アルミニウムを含み、ジメチルアルミニウムヒドリド(DMAH)、トリエチルアルミニウム(TEA)、又はトリメチルアルミニウム(TMA)のうちの1つ以上を使用して堆積される、請求項1から5のいずれか一項に記載の方法。
- 前記リフレクタ層が、タングステンを含み、五塩化タングステン(WCl5)を使用して堆積される、請求項1から5のいずれか一項に記載の方法。
- 前記リフレクタ層が、モリブデンを含み、五塩化モリブデン(MoCl5)又は二塩化二酸化モリブデン(MoO2Cl2)のうちの1つ以上を使用して堆積される、請求項1から5のいずれか一項に記載の方法。
- 前記リフレクタ層が、銅を含み、塩化銅(I)(CuCl)又は塩化銅(II)(CuCl2)のうちの1つ以上を使用して堆積される、請求項1から5のいずれか一項に記載の方法。
- リフレクタ膜スタックを形成する方法であって、
少なくとも1つの構造が形成された基板上に共形ライナを形成することであって、前記少なくとも1つの構造が底部及び側壁を有する、形成すること;
前記基板を成長抑制剤に曝露して前記基板の上部を不活性化すること;
前記少なくとも1つの構造内の前記ライナ上にリフレクタ層を抑制された厚さまで形成すること;
前記基板の前記上部を再活性化すること;及び
前記少なくとも1つの構造に前記リフレクタ層を充填すること
を含む、方法。 - 前記ライナが、TiAlC、又はチタン(Ti)、タンタル(Ta)、コバルト(Co)、ニッケル(Ni)、モリブデン(Mo)若しくはアルミニウム(Al)のうちの1つ以上を含む、請求項13に記載の方法。
- 前記リフレクタ層が、アルミニウム、タングステン、モリブデン、又は銅のうちの1つ以上を含む、請求項13に記載の方法。
- 前記共形ライナが炭化チタンアルミニウム(TiAlC)を含み、前記リフレクタ層がアルミニウムを含み、前記基板を前記成長抑制剤に曝露することが、前記基板をトリエチルアルミニウム(TEA)に浸漬することを含み、かつ前記基板の前記上部を再活性化することが、前記基板を四塩化チタン(TiCl4)に曝露することを含む、請求項13に記載の方法。
- 前記リフレクタ層が、その間に酸素に曝露されることなく、前記ライナと同じ処理ツール内で形成される、請求項13に記載の方法。
- 非一時的コンピュータ可読媒体であって、処理ツールのコントローラによって実行されると、前記処理ツールに、次の動作:
内部にロボットを有する中央移送ステーションに接続された第1の処理チャンバ内で基板上に共形ライナを堆積させ、
前記基板が酸素に曝露されないように、前記基板を前記第1の処理チャンバから前記中央移送ステーションに接続された第2の処理チャンバへと移動させ、
前記第1の処理チャンバ、前記中央移送ステーション、又は前記第2の処理チャンバのうちの1つ以上において、前記基板を成長抑制剤に曝露させ、
前記第2の処理チャンバ内で前記ライナ上にリフレクタ層を形成させ、かつ
前記基板を再活性化剤に曝露させる
動作を実行させる命令を含む、非一時的コンピュータ可読媒体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/819,023 | 2020-03-13 | ||
US16/819,023 US11776980B2 (en) | 2020-03-13 | 2020-03-13 | Methods for reflector film growth |
PCT/US2021/021914 WO2021183767A1 (en) | 2020-03-13 | 2021-03-11 | Methods for reflector film growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023517605A JP2023517605A (ja) | 2023-04-26 |
JP7473667B2 true JP7473667B2 (ja) | 2024-04-23 |
Family
ID=77663787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022554609A Active JP7473667B2 (ja) | 2020-03-13 | 2021-03-11 | リフレクタ膜の成長方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11776980B2 (ja) |
EP (1) | EP4118253A4 (ja) |
JP (1) | JP7473667B2 (ja) |
KR (1) | KR20220150974A (ja) |
CN (1) | CN115244212A (ja) |
TW (1) | TWI834027B (ja) |
WO (1) | WO2021183767A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220310678A1 (en) * | 2021-03-26 | 2022-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | High reflectance isolation structure to increase image sensor performance |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020132472A1 (en) | 2001-03-14 | 2002-09-19 | Jusung Engineering Co., Ltd. | Method for forming metal plug |
JP2017014615A (ja) | 2015-05-27 | 2017-01-19 | ラム リサーチ コーポレーションLam Research Corporation | フッ素含有量が少ないタングステン膜 |
JP2017053024A (ja) | 2015-08-07 | 2017-03-16 | ラム リサーチ コーポレーションLam Research Corporation | タングステン堆積充填の強化のためのタングステンの原子層エッチング |
US20170148670A1 (en) | 2015-11-25 | 2017-05-25 | Applied Materials, Inc. | Methods for forming low-resistance contacts through integrated process flow systems |
US20180233372A1 (en) | 2017-02-15 | 2018-08-16 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US20190088540A1 (en) | 2017-09-21 | 2019-03-21 | Applied Materials, Inc. | Methods and apparatus for filling substrate features with cobalt |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0799903A3 (en) * | 1996-04-05 | 1999-11-17 | Applied Materials, Inc. | Methods of sputtering a metal onto a substrate and semiconductor processing apparatus |
JP3618974B2 (ja) * | 1997-10-17 | 2005-02-09 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
KR100475050B1 (ko) * | 1998-09-24 | 2005-07-05 | 삼성전자주식회사 | 스페이서로보호되는박막의질화막라이너를갖는트렌치소자분리방법및구조 |
US7074690B1 (en) | 2004-03-25 | 2006-07-11 | Novellus Systems, Inc. | Selective gap-fill process |
KR100688055B1 (ko) * | 2004-05-10 | 2007-02-28 | 주식회사 하이닉스반도체 | 저온 장벽금속층을 이용한 금속배선 제조 방법 |
KR20060066427A (ko) | 2004-12-13 | 2006-06-16 | 삼성전자주식회사 | 이미지 센서에서 누화 현상을 방지하는 소자분리막 형성방법 |
US20120149213A1 (en) * | 2010-12-09 | 2012-06-14 | Lakshminarayana Nittala | Bottom up fill in high aspect ratio trenches |
US9484196B2 (en) | 2014-02-25 | 2016-11-01 | Micron Technology, Inc. | Semiconductor structures including liners comprising alucone and related methods |
US9806129B2 (en) | 2014-02-25 | 2017-10-31 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
WO2016032468A1 (en) * | 2014-08-27 | 2016-03-03 | Ultratech, Inc. | Improved through silicon via |
US9343372B1 (en) | 2014-12-29 | 2016-05-17 | GlobalFoundries, Inc. | Metal stack for reduced gate resistance |
US9686457B2 (en) | 2015-09-11 | 2017-06-20 | Semiconductor Components Industries, Llc | High efficiency image sensor pixels with deep trench isolation structures and embedded reflectors |
US9627484B1 (en) | 2015-10-12 | 2017-04-18 | International Business Machines Corporation | Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer |
CN108140578B (zh) * | 2015-10-23 | 2022-07-08 | 应用材料公司 | 通过表面毒化处理的由下而上的间隙填充 |
US20190326284A1 (en) | 2016-02-11 | 2019-10-24 | Samsung Electronics Co., Ltd. | Semiconductor device including transistors with adjusted threshold voltages |
US10431583B2 (en) | 2016-02-11 | 2019-10-01 | Samsung Electronics Co., Ltd. | Semiconductor device including transistors with adjusted threshold voltages |
US10460933B2 (en) | 2017-03-31 | 2019-10-29 | Applied Materials, Inc. | Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film |
US10319768B2 (en) | 2017-08-28 | 2019-06-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor scheme for optical and electrical improvement |
-
2020
- 2020-03-13 US US16/819,023 patent/US11776980B2/en active Active
-
2021
- 2021-03-09 TW TW110108279A patent/TWI834027B/zh active
- 2021-03-11 JP JP2022554609A patent/JP7473667B2/ja active Active
- 2021-03-11 KR KR1020227035256A patent/KR20220150974A/ko not_active Application Discontinuation
- 2021-03-11 WO PCT/US2021/021914 patent/WO2021183767A1/en active Application Filing
- 2021-03-11 EP EP21768603.9A patent/EP4118253A4/en active Pending
- 2021-03-11 CN CN202180018843.2A patent/CN115244212A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020132472A1 (en) | 2001-03-14 | 2002-09-19 | Jusung Engineering Co., Ltd. | Method for forming metal plug |
JP2017014615A (ja) | 2015-05-27 | 2017-01-19 | ラム リサーチ コーポレーションLam Research Corporation | フッ素含有量が少ないタングステン膜 |
JP2017053024A (ja) | 2015-08-07 | 2017-03-16 | ラム リサーチ コーポレーションLam Research Corporation | タングステン堆積充填の強化のためのタングステンの原子層エッチング |
US20170148670A1 (en) | 2015-11-25 | 2017-05-25 | Applied Materials, Inc. | Methods for forming low-resistance contacts through integrated process flow systems |
US20180233372A1 (en) | 2017-02-15 | 2018-08-16 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US20190088540A1 (en) | 2017-09-21 | 2019-03-21 | Applied Materials, Inc. | Methods and apparatus for filling substrate features with cobalt |
Also Published As
Publication number | Publication date |
---|---|
CN115244212A (zh) | 2022-10-25 |
TWI834027B (zh) | 2024-03-01 |
US20210288086A1 (en) | 2021-09-16 |
EP4118253A1 (en) | 2023-01-18 |
US11776980B2 (en) | 2023-10-03 |
EP4118253A4 (en) | 2024-08-14 |
JP2023517605A (ja) | 2023-04-26 |
TW202200819A (zh) | 2022-01-01 |
WO2021183767A1 (en) | 2021-09-16 |
KR20220150974A (ko) | 2022-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10886172B2 (en) | Methods for wordline separation in 3D-NAND devices | |
US8637390B2 (en) | Metal gate structures and methods for forming thereof | |
KR20190024834A (ko) | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 | |
KR20210146431A (ko) | 루테늄 도핑에 의한 증진된 코발트 내응집성 및 갭 충전 성능 | |
US20150203961A1 (en) | Methods for forming a cobalt-ruthenium liner layer for interconnect structures | |
US20190271071A1 (en) | Metal Deposition Methods | |
JP7542939B2 (ja) | 基材表面および関連する半導体デバイス構造上のギャップ特徴を充填するための方法 | |
JP2023500622A (ja) | 低抵抗コンタクト相互接続のための方法および装置 | |
JP7473667B2 (ja) | リフレクタ膜の成長方法 | |
US20220165852A1 (en) | Methods and apparatus for metal fill in metal gate stack | |
US20220108916A1 (en) | Methods and apparatus for seam reduction or elimination | |
US12094766B2 (en) | Selective blocking of metal surfaces using bifunctional self-assembled monolayers | |
US20240060175A1 (en) | Conformal molybdenum deposition | |
US20230326744A1 (en) | Field suppressed metal gapfill | |
US20230136499A1 (en) | Selective Passivation Of Damaged Nitride | |
US11967523B2 (en) | Self-assembled monolayer for selective deposition | |
US20240360549A1 (en) | Low-temperature deposition processes to form molybdenum-based materials with improved resistivity | |
US20230386833A1 (en) | Selective metal removal with flowable polymer | |
US20230197508A1 (en) | Self-assembled monolayer for selective deposition | |
US20240240314A1 (en) | Low resistivity gapfill for logic devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221108 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230926 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231226 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240411 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7473667 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |