JP7445043B2 - 減圧システムを洗浄するための方法、基板の減圧処理のための方法、及び基板を減圧処理するための装置 - Google Patents
減圧システムを洗浄するための方法、基板の減圧処理のための方法、及び基板を減圧処理するための装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 148
- 238000004140 cleaning Methods 0.000 title claims description 129
- 239000000758 substrate Substances 0.000 title claims description 61
- 238000012545 processing Methods 0.000 title claims description 28
- 230000008569 process Effects 0.000 claims description 75
- 239000007789 gas Substances 0.000 claims description 43
- 238000004519 manufacturing process Methods 0.000 claims description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000012423 maintenance Methods 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 87
- 238000011109 contamination Methods 0.000 description 20
- 230000003749 cleanliness Effects 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000001994 activation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 241000894007 species Species 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000010407 vacuum cleaning Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2209/00—Details of machines or methods for cleaning hollow articles
- B08B2209/08—Details of machines or methods for cleaning containers, e.g. tanks
-
- C11D2111/20—
-
- C11D2111/46—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Description
[0042] 本明細書で説明される他の実施形態と任意選択的に組み合わされ得るまた更なる実施形態は、本明細書で説明されるように、洗浄化学に使用される適応したプロセスパラメータに言及する。
例示的に、チャンバ壁は、上側チャンバ壁であってよい。処理システム300が、各チャンバで遠隔プラズマ源を有する減圧チャンバを示しているとしても、処理システムは、少なくとも1つの遠隔プラズマ源350を含んでよい。特に、処理システム300は、第1の遠隔プラズマ源350を有する第1の減圧チャンバ、及び第2の遠隔プラズマ源350を有する第2の減圧チャンバを含み得る。
Claims (15)
- 減圧チャンバを洗浄するための方法であって、
前記減圧チャンバの壁の平均距離を特定することと、
前記壁の平均距離の20%から97%の平均自由行程長に対応する圧力で、前記減圧チャンバの面と前記減圧チャンバ内部の構成要素とのうちの少なくとも1つを活性種で洗浄することと
を含む、方法。 - 前記減圧チャンバを洗浄するための方法が、基板を減圧処理するための装置によって実現され、当該装置が、前記減圧チャンバ、遠隔プラズマ源、バルブ、及びバイパスを備え、前記遠隔プラズマ源が前記減圧チャンバに連結され、前記遠隔プラズマ源がプロセスガス入口、活性種用の導管、及びプロセスガス出口を備え、前記減圧チャンバと前記遠隔プラズマ源の間の前記バルブが前記導管を開閉するために配置され、且つ前記導管のための前記バイパスが前記プロセスガス出口と前記減圧チャンバを連結する、請求項1に記載の方法。
- 動作中に、前記プロセスガス入口を介して酸素含有プロセスガスを前記遠隔プラズマ源に供給することをさらに含む、請求項2に記載の方法。
- 前記酸素含有プロセスガスが、窒素又はアルゴンとの酸素混合物である、請求項3に記載の方法。
- 前記減圧チャンバが、OLEDデバイスの製造において使用される、請求項1に記載の方法。
- 前記洗浄することが、5×10-3mbar以下の圧力で行われる、請求項1に記載の方法。
- 前記洗浄することが、1×10-4mbar以下の圧力で行われる、請求項1に記載の方法。
- 第1の圧力で遠隔プラズマ源を点火すること、及び、
前記遠隔プラズマ源内の圧力を、前記第1の圧力より少なくとも一桁低い第2の圧力に低減させること
をさらに含む、請求項1から7のいずれか一項に記載の方法。 - 前記遠隔プラズマ源内の圧力を、前記第1の圧力より少なくとも三桁低い第2の圧力に低減させること
をさらに含む、請求項8に記載の方法。 - プラズマ洗浄が、前記減圧チャンバの1以上の内壁の洗浄を含む、請求項1から7のいずれか一項に記載の方法。
- 前記方法は、減圧システム又は前記減圧システムの部分の保守手順の後に実行される、請求項1から7のいずれか一項に記載の方法。
- OLEDデバイスを製造するために基板を減圧処理するための方法であって、
請求項1から11のいずれか一項に記載の洗浄するための方法、及び
前記基板上に有機材料の1以上の層を堆積させること
を含む、方法。 - 基板を減圧処理するための装置であって、
減圧チャンバと、
前記減圧チャンバに連結された遠隔プラズマ源と
を備え、当該遠隔プラズマ源が、
プロセスガス入口、
活性種用の導管、及び
プロセスガス出口
を備え、
前記装置がさらに、
前記導管を開閉するために配置された、前記減圧チャンバと前記遠隔プラズマ源の間のバルブと、
前記プロセスガス出口と前記減圧チャンバを連結する、前記導管のためのバイパスと
を備える、装置。 - 前記基板を減圧処理するための装置が、OLEDデバイスを製造するためのものである、請求項13に記載の装置。
- プロセッサと、当該プロセッサによって実行されたときに、前記装置に請求項1から12のいずれか一項に記載の方法を実行させる命令を記憶したメモリとを備える、コントローラをさらに備える、請求項13又は14に記載の装置。
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PCT/EP2019/052253 WO2020156659A1 (en) | 2019-01-30 | 2019-01-30 | Method for cleaning a vacuum system, method for vacuum processing of a substrate, and apparatus for vacuum processing a substrate |
JP2023031469A JP7445043B2 (ja) | 2019-01-30 | 2023-03-02 | 減圧システムを洗浄するための方法、基板の減圧処理のための方法、及び基板を減圧処理するための装置 |
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CN107761050A (zh) * | 2016-08-19 | 2018-03-06 | 合肥欣奕华智能机器有限公司 | 一种掩膜板清洗系统 |
CN108346561B (zh) * | 2018-02-09 | 2020-12-22 | 信利(惠州)智能显示有限公司 | 栅极绝缘层成膜前的多晶硅层处理方法及处理系统 |
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WO2005098922A1 (ja) | 2004-03-31 | 2005-10-20 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法 |
JP2007284793A (ja) | 2006-04-19 | 2007-11-01 | Asm Japan Kk | 炭素質膜のセルフクリーニング方法 |
JP2013102200A (ja) | 2007-04-02 | 2013-05-23 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
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WO2020156659A1 (en) | 2020-08-06 |
US20210391537A1 (en) | 2021-12-16 |
JP7239688B2 (ja) | 2023-03-14 |
CN112867574A (zh) | 2021-05-28 |
JP2022518090A (ja) | 2022-03-14 |
JP2023078187A (ja) | 2023-06-06 |
TW202045760A (zh) | 2020-12-16 |
KR20210074326A (ko) | 2021-06-21 |
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