JP7442194B2 - フレキシブル基板上の集積回路の製造プロセス - Google Patents
フレキシブル基板上の集積回路の製造プロセス Download PDFInfo
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- JP7442194B2 JP7442194B2 JP2020539740A JP2020539740A JP7442194B2 JP 7442194 B2 JP7442194 B2 JP 7442194B2 JP 2020539740 A JP2020539740 A JP 2020539740A JP 2020539740 A JP2020539740 A JP 2020539740A JP 7442194 B2 JP7442194 B2 JP 7442194B2
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- H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Analytical Chemistry (AREA)
- Wire Bonding (AREA)
- Thin Film Transistor (AREA)
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- Structure Of Printed Boards (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
フレキシブル基板用のキャリアを用意するステップと、
前記キャリア上に均一な厚さのフレキシブル基板を堆積させるステップと、
複数のIC接続エリアによって互いから離隔された複数のIC基板エリアを規定するように、前記均一な厚さのフレキシブル基板をパターニングするステップと、
フレキシブル基板にチャネルを形成し、前記チャネルによってキャリア上で互いから離隔された複数のIC基板ユニットを形成するため、フレキシブル基板の厚さの少なくとも一部分をIC接続エリアの少なくとも一部分から除去するステップと、
IC基板ユニットのうちの少なくとも1つの上に集積回路を形成するステップと、を含む。
フレキシブル基板用のキャリアを用意するステップと、
前記キャリア上に均一な厚さのフレキシブル基板を堆積させるステップと、
複数のIC接続エリアによって互いから離隔された複数のIC基板エリアを規定するように、前記均一な厚さのフレキシブル基板をパターニングするステップと、
IC基板エリアのうちの少なくとも1つの上に集積回路の一部分を形成するステップと、
フレキシブル基板にチャネルを形成し、前記チャネルによってキャリア上で互いから離隔された複数のIC基板ユニットを形成するため、フレキシブル基板の厚さの少なくとも一部分をIC接続エリアの少なくとも一部分から除去するステップと、
IC基板エリアのうちの少なくとも1つの上における集積回路の形成を完了させるステップと、を含む。
フレキシブル基板用のキャリアを用意するステップと、
複数のIC接続エリアによって互いから離隔された複数のIC基板エリアを規定する、均一な厚さのフレキシブル基板のパターンを、前記キャリア上に堆積させるステップと、
IC基板ユニットのうちの少なくとも1つの上に集積回路を形成するステップと、を含む。
Claims (18)
- キャリア上に複数の個別集積回路(IC)を製造するプロセスであって、
フレキシブル基板用のキャリアを用意するステップと、
前記キャリア上に均一な厚さのフレキシブル基板を堆積させるステップと、
複数のIC接続エリアによって互いから離隔された複数のIC基板エリアを規定するように、前記均一な厚さのフレキシブル基板をパターニングするステップと、
前記フレキシブル基板にチャネルを形成し、前記チャネルによって前記キャリア上で互いから離隔された複数のIC基板ユニットを形成するため、前記フレキシブル基板の前記厚さの第1の部分を前記IC接続エリアそれぞれの第1の部分から除去し、前記フレキシブル基板の前記厚さの第2の部分を前記IC接続エリアそれぞれの前記第1の部分よりも厚さが薄い第2の異なる部分から除去するステップ(i)と、
前記IC基板ユニットのうちの少なくとも1つの上に集積回路を直接形成するステップ(ii)と、を含み、
ステップ(i)は、ステップ(ii)に先行するプロセス。 - キャリア上に複数の個別集積回路(IC)を製造するプロセスであって、
フレキシブル基板用のキャリアを用意するステップと、
前記キャリア上に均一な厚さのフレキシブル基板を堆積させるステップと、
複数のIC接続エリアによって互いから離隔された複数のIC基板エリアを規定するよ
うに、前記均一な厚さのフレキシブル基板をパターニングするステップと、
前記IC基板エリアのうちの少なくとも1つの上に集積回路の一部分を直接形成するステップと、
前記フレキシブル基板にチャネルを形成し、前記チャネルによって前記キャリア上で互いから離隔された複数のIC基板ユニットを形成するため、前記フレキシブル基板の前記厚さの第1の部分を前記IC接続エリアそれぞれの第1の部分から除去し、前記フレキシブル基板の前記厚さの第2の部分を前記IC接続エリアそれぞれの前記第1の部分よりも厚さが薄い第2の異なる部分から除去するステップと、
前記IC基板エリアのうちの少なくとも1つの上における前記集積回路の直接の形成を完了させるステップと、を含むプロセス。 - 前記IC基板ユニットそれぞれの上に集積回路を形成することを含む、請求項1または2に記載のプロセス。
- 各IC基板ユニットが均一な厚さのフレキシブル基板を備える、請求項1から3のいずれか一項に記載のプロセス。
- 少なくとも1つのチャネルが前記IC基板ユニットそれぞれの間に形成された、複数のパターニングされたチャネルを前記キャリア上で形成するように、前記フレキシブル基板の前記厚さ全体を前記IC接続エリアそれぞれの一部分から除去することを含む、請求項1から4のいずれか一項に記載のプロセス。
- 少なくとも1つのチャネルが前記IC基板ユニットそれぞれの間に形成される、複数のパターニングされたチャネルを前記キャリア上に形成するように、前記IC接続エリアそれぞれに沿って前記フレキシブル基板の前記厚さ全体を除去するのと残すのとを順に行うことによって、前記IC接続エリアの隣接したIC基板ユニット間に切取り線を形成することを含む、請求項1から5のいずれか一項に記載のプロセス。
- 前記フレキシブル基板の前記厚さの第1の部分を前記IC接続エリアそれぞれの第1の部分から除去するのと、前記フレキシブル基板の前記厚さの第2の部分を前記IC接続エリアそれぞれの前記第1の部分よりも厚さが薄い第2の異なる部分から除去するのとを順に行うことによって、前記IC接続エリアの隣接したIC基板ユニット間に切取り線を形成することを含む、または少なくとも1つのチャネルが前記IC基板ユニットそれぞれの間に形成される、複数のパターニングされたチャネルを前記キャリア上に形成するように、前記IC接続エリアそれぞれに沿って前記フレキシブル基板の前記厚さ全体を除去するのと前記フレキシブル基板の厚さの一部を除去するのとを順に行うことによって、前記IC接続エリアの隣接したIC基板ユニット間に切取り線を形成することを含む、請求項1から5のいずれか一項に記載のプロセス。
- 前記チャネルに隣接した前記IC基板ユニットから離隔された、前記フレキシブル基板の少なくとも1つの構造を前記チャネル内に有するチャネルを形成するように、前記フレキシブル基板の前記厚さ全体を前記IC接続エリアそれぞれの一部分から除去することによって、少なくとも1つの構造を前記IC接続エリアに形成することを含む、請求項1から5のいずれか一項に記載のプロセス。
- 前記キャリア上の前記IC基板ユニットの形状が均一であるか、または前記IC基板ユニットが多角形である、請求項1から8のいずれか一項に記載のプロセス。
- 前記キャリア上の前記IC基板ユニットのうちの少なくとも1つにおける少なくとも1つのエッジが、少なくとも1つのくぼみを備えるか、または前記エッジが一連のくぼみを備える、請求項1から9のいずれか一項に記載のプロセス。
- 前記キャリアが剛性である、請求項1から10のいずれか一項に記載のプロセス。
- 前記キャリアが可撓性であるか、または前記キャリアが可撓性剥離テープである、請求項1から10のいずれか一項に記載のプロセス。
- 前記フレキシブル基板の少なくとも一部分が前記IC接続エリアから除去されて、前記キャリア上の所定の位置にあるパターンでチャネルが形成され、かつ/または前記パターンが、前記キャリアの前記エッジ間を延在する一連の交差するチャネルで形成され、かつ/または前記チャネルのパターンが前記キャリア全体にわたって均一である、または前記チャネルのパターンが前記キャリア全体にわたって不均一である、請求項10に記載のプロセス。
- 前記フレキシブル基板が単一層で形成される、または前記フレキシブル基板が、中間層によって互いから離隔された2つのポリマー基板層を備える、層状構造を備える、請求項1から13のいずれか一項に記載のプロセス。
- 前記フレキシブル基板材料が、ポリマー、またはポリイミド、ポリエチレン・テレフタレート(PET)、パリレン、ベンゾシクロブテン、Cytop(商標)、ネガ型エポキシ樹脂フォトレジスト、水素シルセスキオキサン(HSQ)、およびポリアリールエーテルエーテルケトン(PEEK)のうちの1つまたは複数、または金属酸化物、金属リン酸塩、金属硫酸塩、金属硫化物、金属窒化物、金属酸窒化物、無機絶縁体、およびスピン加工可能なガラスのうちの1つまたは複数を含む、請求項1から14のいずれか一項に記載のプロセス。
- 前記キャリアと前記フレキシブル基板との間の境界面が、前記フレキシブル基板を前記キャリアに直接接着することによって形成される、請求項1から15のいずれか一項に記載のプロセス。
- 前記境界面が中間層を備え、かつ/または前記中間層が接着剤を備え、かつ/または前記中間層がチタン金属を含み、かつ/または前記中間層がパターニングされる、請求項16に記載のプロセス。
- 前記キャリア上におけるIC形成プロセスの完了後、前記IC基板ユニットそれぞれを前記キャリアから剥離することによって、前記IC基板ユニットを個片化するステップを含む、請求項1から17のいずれか一項に記載のプロセス。
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GBGB1801457.1A GB201801457D0 (en) | 2018-01-30 | 2018-01-30 | Integrated circuit manufacturing process and apparatus |
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PCT/GB2019/050243 WO2019150093A1 (en) | 2018-01-30 | 2019-01-30 | Integrated circuit on flexible substrat manufacturing process |
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GB2566030B (en) * | 2017-08-30 | 2023-01-04 | Pragmatic Printing Ltd | Integrated circuit handling process and apparatus |
GB201801457D0 (en) | 2018-01-30 | 2018-03-14 | Pragmatic Printing Ltd | Integrated circuit manufacturing process and apparatus |
CN116314041A (zh) * | 2023-05-24 | 2023-06-23 | 深圳和美精艺半导体科技股份有限公司 | 承载基板、应用其的封装结构及封装元件 |
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US20150333221A1 (en) | 2014-05-15 | 2015-11-19 | LuxVue Technology Corporation | Flexible display and method of formation with sacrificial release layer |
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US11462575B2 (en) | 2022-10-04 |
KR102579734B1 (ko) | 2023-09-20 |
EP3747062A1 (en) | 2020-12-09 |
GB201801457D0 (en) | 2018-03-14 |
US20210036034A1 (en) | 2021-02-04 |
GB202206332D0 (en) | 2022-06-15 |
TW201941335A (zh) | 2019-10-16 |
JP2021512485A (ja) | 2021-05-13 |
GB2571203B (en) | 2022-07-06 |
GB2603735B (en) | 2022-12-14 |
US11990484B2 (en) | 2024-05-21 |
CN111937172A (zh) | 2020-11-13 |
GB201901234D0 (en) | 2019-03-20 |
WO2019150093A1 (en) | 2019-08-08 |
EP3747062B1 (en) | 2024-08-21 |
US20220359579A1 (en) | 2022-11-10 |
GB2571203A (en) | 2019-08-21 |
KR20200112920A (ko) | 2020-10-05 |
GB2603735A (en) | 2022-08-10 |
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